Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2013
08/29/2013US20130221455 Methods for Embedding Controlled-Cavity MEMS Package in Integration Board
08/29/2013US20130221453 Tunable MEMS Device and Method of Making a Tunable MEMS Device
08/29/2013US20130221452 Semiconductor Device and Method of Forming Semiconductor Die with Active Region Responsive to External Stimulus
08/29/2013US20130221451 MOS TRANSISTORS INCLUDING SiON GATE DIELECTRIC WITH ENHANCED NITROGEN CONCENTRATION AT ITS SIDEWALLS
08/29/2013US20130221450 Mems device and method of forming the same
08/29/2013US20130221449 Manufacturing method of semiconductor device and semiconductor manufacturing device
08/29/2013US20130221448 Fin profile structure and method of making same
08/29/2013US20130221446 Semiconductor with through-substrate interconnect
08/29/2013US20130221445 Atomic Layer Deposition Methods For Metal Gate Electrodes
08/29/2013US20130221443 Finfets and method of fabricating the same
08/29/2013US20130221440 Method of manufacturing a semiconductor device
08/29/2013US20130221439 Soi wafer and method of manufacturing the same
08/29/2013US20130221438 High voltage metal-oxide-semiconductor transistor device and layout pattern thereof
08/29/2013US20130221437 Transistor with minimized resistance
08/29/2013US20130221435 Closed cell trenched power semiconductor structure
08/29/2013US20130221434 Semiconductor device and method for producing same
08/29/2013US20130221433 Vertical Semiconductor Device with Thinned Substrate
08/29/2013US20130221432 Semiconductor device and method of manufacturing the same
08/29/2013US20130221431 Semiconductor device and method of manufacture thereof
08/29/2013US20130221430 Nano-tube mosfet technology and devices
08/29/2013US20130221429 Method and apparatus related to a junction field-effect transistor
08/29/2013US20130221428 Process of forming an electronic device including a trench and a conductive structure therein
08/29/2013US20130221427 Semiconductor Device With Improved Robustness
08/29/2013US20130221426 Electric power semiconductor device and manufacturing method of the same
08/29/2013US20130221425 Nonvolatile memory device and method for fabricating the same
08/29/2013US20130221424 Semiconductor device and method for fabricating semiconductor device
08/29/2013US20130221423 Nonvolatile semiconductor memory device and method for manufacturing same
08/29/2013US20130221422 Memory device and method of manufacture thereof
08/29/2013US20130221421 Stacked-gate non-volatile flash memory cell, memory device and manufacturing method thereof
08/29/2013US20130221420 Structure comprising a ruthenium metal material
08/29/2013US20130221417 Memory devices and methods of fabricating the same
08/29/2013US20130221415 Field-Effect P-N Junction
08/29/2013US20130221414 Semiconductor FET and Method for Manufacturing the Same
08/29/2013US20130221413 Divot-free planarization dielectric layer for replacement gate
08/29/2013US20130221412 Device System Structure Based On Hybrid Orientation SOI and Channel Stress and Preparation Method Thereof
08/29/2013US20130221409 Semiconductor devices with 2deg and 2dhg
08/29/2013US20130221408 Semiconductor device, manufacturing method thereof, protective element, and manufacturing method thereof
08/29/2013US20130221407 Multi-gate transistor device
08/29/2013US20130221406 Ohmic Contact to Semiconductor
08/29/2013US20130221404 Semiconductor structure and method for forming the same
08/29/2013US20130221403 Semiconductor device and method of manufacturing semiconductor device
08/29/2013US20130221402 Insulated gate bipolar transistor
08/29/2013US20130221401 Semiconductor device
08/29/2013US20130221377 Heterogrowth
08/29/2013US20130221376 Semiconductor device and method of manufacturing the same
08/29/2013US20130221375 Silicon carbide semiconductor device and method for manufacturing same
08/29/2013US20130221374 Semiconductor device
08/29/2013US20130221370 Compound semiconductor device
08/29/2013US20130221366 Normally-off compound semiconductor tunnel transistor
08/29/2013US20130221365 Method For Processing Semiconductors Using A Combination Of Electron Beam And Optical Lithography
08/29/2013US20130221364 Semiconductor structure and method of forming the same
08/29/2013US20130221363 Integrated Schottky Diode for HEMTs
08/29/2013US20130221361 Semiconductor display device
08/29/2013US20130221360 Thin film transistor having atomic-doping layer
08/29/2013US20130221358 Transistor, method of manufacturing the transistor, semiconductor unit, method of manufacturing the semiconductor unit, display, and electronic apparatus
08/29/2013US20130221357 Array substrate and manufacturing method thereof
08/29/2013US20130221352 Process for producing indium oxide-containing layers
08/29/2013US20130221351 Laminate structure including oxide semiconductor thin film layer, and thin film transistor
08/29/2013US20130221349 Composite Dielectric Material Doped with Rare Earth Metal Oxide and Manufacturing Method Thereof
08/29/2013US20130221348 Semiconductor thin film, method for producing the same, and thin film transistor
08/29/2013US20130221347 Semiconductor device and method for manufacturing the same
08/29/2013US20130221346 Zinc Oxide-Based Thin Film Transistor Biosensors with High Sensitivity and Selectivity
08/29/2013US20130221345 Semiconductor device and method for manufacturing the same
08/29/2013US20130221344 Semiconductor device
08/29/2013US20130221343 Transistor, method of manufacturing the same, and electronic device including transistor
08/29/2013US20130221342 Overvoltage testing apparatus
08/29/2013US20130221330 Multiple quantum dot device and a production method for the device
08/29/2013US20130221329 Graphene Device
08/29/2013US20130221328 Pad-Less Gate-All Around Semiconductor Nanowire FETs On Bulk Semiconductor Wafers
08/29/2013US20130221327 Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures
08/29/2013US20130221322 Substrate with Buffer Layer for Oriented Nanowire Growth
08/29/2013US20130221319 Gate-All Around Semiconductor Nanowire FET's On Bulk Semicoductor Wafers
08/29/2013US20130220405 Process for manufacturing colloidal nanosheets by lateral growth of nanocrystals
08/29/2013DE112011104002T5 Oxidhalbleiterschicht und Halbleiterbauelement Oxide semiconductor layer and the semiconductor component
08/29/2013DE112011103810T5 Verfahren zum Herstellen von Surround-Gate-Silizium-Nanodraht-Transistor mit Luft als Seitenwand A process for producing surround gate silicon nanowire transistor with air as the side wall
08/29/2013DE112010004355B4 Damascene-Gate-Elektroden mit kurzschlussgeschützten Bereichen und Verfahren zu deren Herstellung Damascene gate electrode with short-circuit protected fields and methods for their preparation
08/29/2013DE102013203076A1 Erkennung des Latch-Up-Effekts Detection of the latch-up effect
08/29/2013DE102013101733A1 Grabenkondensatoren und Verfahren zu deren Ausbildung Grave capacitors and methods of training
08/29/2013DE102013101248A1 Feldeffekttransistor und Verfahren zum Herstellen desselben Field effect transistor and method of manufacturing the same
08/29/2013DE102013003283A1 Selbstsperrender verbundhalbleiter-tunneltransistor Self-locking composite semiconductor tunnel transistor
08/29/2013DE102013002988A1 Halbleiterbauelement mit verbesserter Robustheit A semiconductor device with improved robustness
08/29/2013DE102013002986A1 Integrierte Schottky-Diode für HEMTS Integrated Schottky Diode for HEMTs
08/29/2013DE102012202783A1 Mikromechanische Sensorvorrichtung mit beweglichem Gate und entsprechendes Herstellungsverfahren Micromechanical sensor device with movable gate and method of manufacture
08/29/2013DE102012106901A1 FinFET und Verfahren zu dessen Herstellung FinFET and process for its preparation
08/29/2013DE102009010846B4 Verfahren zum Herstellen einer Gateelektrodenstruktur mit großem ε zum Erhöhen deren Integrität durch Einschluss einer Metalldeckschicht nach der Abscheidung A method of forming a gate electrode structure with large ε for increasing its integrity by incorporating a metal coating layer after deposition
08/29/2013DE102005034485B4 Verbindungselement für ein Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterleistungsbauelements Connecting element for a semiconductor device and method of manufacturing a semiconductor power device
08/28/2013EP2631951A2 High power insulated gate bipolar transistors
08/28/2013EP2631950A1 Semiconductor device and method for manufacturing same
08/28/2013EP2631933A1 Semiconductor substrate and field effect transistor, and manufacturing method for same
08/28/2013EP2631913A2 Field-effect transistor with magnetic layer
08/28/2013EP2631912A1 Field-effect transistor with magnetic layer
08/28/2013EP2630663A2 Improved schottky rectifier
08/28/2013EP2630662A1 Cmos devices and method for manufacturing the same
08/28/2013EP2630661A2 Trench dmos device with improved termination structure for high voltage applications
08/28/2013EP2630658A1 Scr apparatus and method for adjusting the sustaining voltage
08/28/2013CN203165902U High-efficiency high-withstand voltage Schottky chip
08/28/2013CN203165901U Multi-level field plate terminal structure of semiconductor device
08/28/2013CN203165900U High-withstand voltage Schottky chip
08/28/2013CN203165891U Semiconductor module
08/28/2013CN103270602A Oxide for semiconductor layer of thin film transistor, sputtering target, and thin-film transistor
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