Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2013
08/15/2013US20130210210 Silicon germanium heterojunction bipolar transistor structure and method
08/15/2013US20130210208 Method for manufacturing silicon carbide semiconductor device
08/15/2013US20130210207 Fabrication method of semiconductor device and fabrication method of dynamic threshold transistor
08/15/2013US20130210206 Bulk fin-field effect transistors with well defined isolation
08/15/2013US20130210203 Method of manufacturing compound semiconductor device
08/15/2013US20130210202 Method of planarizing substrate and method of manufacturing thin film transistor using the same
08/15/2013US20130208551 Semiconductor memory device and method for accessing the same
08/15/2013US20130208207 Display device substrate, method for producing the same, and display device
08/15/2013US20130208204 Thin film transistor and display panel employing the same
08/15/2013US20130207244 Process for fabricating a silicon-on-insulator structure
08/15/2013US20130207243 Method of Manufacturing a Semiconductor Device
08/15/2013US20130207239 Interconnect Crack Arrestor Structure and Methods
08/15/2013US20130207238 Block co-polymer photoresist
08/15/2013US20130207237 Method for producing gallium nitride substrates for electronic and optoelectronic devices
08/15/2013US20130207236 High-beta bipolar junction transistor and method of manufacture
08/15/2013US20130207235 Self-aligned emitter-base region
08/15/2013US20130207232 Semiconductor devices including capacitors and methods of manufacturing the same
08/15/2013US20130207229 Noise isolation between circuit blocks in an integrated circuit chip
08/15/2013US20130207228 Method of manufacturing semiconductor device and semiconductor device
08/15/2013US20130207227 Mosfet termination trench
08/15/2013US20130207226 Recessed device region in epitaxial insulating layer
08/15/2013US20130207223 Semiconductor device and method for producing a semiconductor device
08/15/2013US20130207222 Super-junction schottky oxide pin diode having thin p-type layers under the schottky contact
08/15/2013US20130207209 Top-pinned magnetic tunnel junction device with perpendicular magnetization
08/15/2013US20130207207 Method and apparatus for high pressure sensor device
08/15/2013US20130207206 Semiconductor device having au-cu electrodes, and method of manufacturing semiconductor device
08/15/2013US20130207204 Biosensor chip and a method of manufacturing the same
08/15/2013US20130207203 Semiconductor device and manufacturing method thereof
08/15/2013US20130207195 Semiconductor device
08/15/2013US20130207193 Semiconductor device and method for manufacturing semiconductor device
08/15/2013US20130207192 Power Integrated Circuit with Incorporated Sense FET
08/15/2013US20130207191 Semiconductor structure and method for manufacturing the same
08/15/2013US20130207189 Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same
08/15/2013US20130207188 Junction butting on soi by raised epitaxial structure and method
08/15/2013US20130207187 Insulated gate bipolar transistor structure having low substrate leakage
08/15/2013US20130207186 Stepped-source ldmos architecture
08/15/2013US20130207185 Isolated device and manufacturing method thereof
08/15/2013US20130207184 Semiconductor device
08/15/2013US20130207183 Semiconductor device and method of fabricating the same
08/15/2013US20130207182 Semiconductor device and method of manufacturing the same
08/15/2013US20130207181 Semiconductor device and method for manufacturing the same
08/15/2013US20130207180 Symmetric ldmos transistor and method of production
08/15/2013US20130207178 Semiconductor device and method of manufacturing the same
08/15/2013US20130207177 Nonvolatile memory device and method of manufacturing the same
08/15/2013US20130207176 Semiconductor device and method for manufacturing the same
08/15/2013US20130207174 Split-gate device and method of fabricating the same
08/15/2013US20130207173 Flash memory and method for fabricating the same
08/15/2013US20130207172 Trench mosfet having a top side drain
08/15/2013US20130207167 Tunneling field effect transistor and method for fabricating the same
08/15/2013US20130207166 Methods and Apparatus for Doped SiGe Source/Drain Stressor Deposition
08/15/2013US20130207163 Semiconductor Devices and Manufacturing Methods Thereof
08/15/2013US20130207162 High performance multi-finger strained silicon germanium channel pfet and method of fabrication
08/15/2013US20130207161 Semiconductor device and method for forming the same
08/15/2013US20130207159 Bipolar non-punch-through power semiconductor device
08/15/2013US20130207158 Semiconductor device
08/15/2013US20130207157 Reverse-conducting power semiconductor device
08/15/2013US20130207124 Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device
08/15/2013US20130207123 High current density power module
08/15/2013US20130207122 Method for fabricating finfets and semiconductor structure fabricated using the method
08/15/2013US20130207119 Low-defect density gallium nitride semiconductor structures and fabrication methods
08/15/2013US20130207116 Semiconductor device and method of manufacturing the same
08/15/2013US20130207115 Semiconductor device and process for production thereof
08/15/2013US20130207113 Electrostatic discharge protection structure for an active array substrate
08/15/2013US20130207112 Semiconductor device
08/15/2013US20130207111 Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
08/15/2013US20130207110 Thin film transistor, thin film transistor array substrate and method of fabricating the same
08/15/2013US20130207109 Semiconductor device and method for manufacturing a semiconductor device
08/15/2013US20130207106 Amorphous oxide semiconductor and thin film transistor using the same
08/15/2013US20130207104 Manufacturing method of thin film transistor and display device
08/15/2013US20130207103 Thin-film transistor and manufacturing method thereof and display
08/15/2013US20130207102 Semiconductor device
08/15/2013US20130207101 Semiconductor device
08/15/2013US20130207098 Soft material wafer bonding and method of bonding
08/15/2013US20130207080 Bilayer gate dielectric with low equivalent oxide thickness for graphene devices
08/15/2013US20130207079 Tapered Nanowire Structure With Reduced Off Current
08/15/2013US20130207078 InGaN-Based Double Heterostructure Field Effect Transistor and Method of Forming the Same
08/15/2013US20130207070 Nanocomposite Material And Its Use In Optoelectronics
08/15/2013US20130207067 Vertical selection transistor, memory cell, and three-dimensional memory array structure and method for fabricating the same
08/15/2013US20130205910 Novel embedded 3d stress and temperature sensor utilizing silicon doping manipulation
08/14/2013EP2626906A2 Semiconductor device
08/14/2013EP2626905A2 Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device
08/14/2013EP2626903A1 Thermally Assisted Flash Memory With Segmented Word Lines
08/14/2013EP2625036A1 Laminated glass and method for producing same
08/14/2013DE112011103385T5 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
08/14/2013DE112011103249T5 Halbleitereinheit mit Gate-Stapel Semiconductor device with gate stack
08/14/2013DE112010005980T5 Halbleiterelement Semiconductor element
08/14/2013DE102013200332A1 Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung A method of manufacturing a silicon carbide semiconductor device
08/14/2013DE102012222116A1 Doppelschicht-Gate-Dielektrikum mit geringer äquivalenter Oxiddicke für Graphen-Bauelemente The double layer gate dielectric having a low equivalent oxide thickness for devices graphs
08/14/2013DE102012202180A1 Halbleiteranordnung für einen Stromsensor in einem Leistungshalbleiter A semiconductor device for a current sensor in a power semiconductor
08/14/2013DE102012202067A1 Halbleiterbauelemente mit steilem Phosphor-Profil in einer Germaniumschicht Semiconductor components with steep phosphorus-profile in a germanium layer
08/14/2013DE102012201911A1 Super-Junction-Schottky-Oxid-PiN-Diode mit dünnen p-Schichten unter dem Schottky-Kontakt Super junction Schottky-oxide-PiN diode with thin p-type layers below the Schottky contact
08/14/2013CN203134811U Thin film transistor, array substrate and display device
08/14/2013CN203134810U Array substrate and display device
08/14/2013CN203134809U Thin film transistor, array substrate, and display device
08/14/2013CN203134808U Thin film transistor, shift register, display panel and device
08/14/2013CN203134807U Insulated gate bipolar transistor
08/14/2013CN203134806U Layout of electrical connection between active area metal and terminal area
08/14/2013CN203134805U Middle-and-high-voltage IGBT terminal
08/14/2013CN203134804U Triode
08/14/2013CN203134803U Triode with heat radiation structure
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