Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2013
08/27/2013US8519380 Low thermal conductivity material
08/27/2013US8519379 Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
08/27/2013US8519378 Semiconductor light-emitting element array including a semiconductor rod
08/27/2013US8519377 Nonvolatile memory device, nonvolatile memory device group, and manufacturing method thereof
08/27/2013US8519374 Resistive memory device and method for fabricating the same
08/27/2013US8519373 Memory cells
08/27/2013US8519372 Electroforming-free nanoscale switching device
08/27/2013US8519371 Nonvolatile memory device and method for manufacturing the same
08/27/2013US8518822 Integrated circuit packaging system with multi-stacked flip chips and method of manufacture thereof
08/27/2013US8518806 Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device
08/27/2013US8518794 Semiconductor devices and methods of forming thereof
08/27/2013US8518777 Method for forming accumulation-mode field effect transistor with improved current capability
08/27/2013US8518775 Integration of eNVM, RMG, and HKMG modules
08/27/2013US8518774 Manufacturing process for zero-capacitor random access memory circuits
08/27/2013US8518769 Semiconductor device and method of manufacturing the same
08/27/2013US8518764 Semiconductor structure having a through substrate via (TSV) and method for forming
08/27/2013US8518759 Method for producing an integrated field-effect transistor
08/27/2013US8518728 Semiconductor element, method for manufacturing the same, liquid crystal display device, and method for manufacturing the same
08/27/2013US8518562 Magnetic storage device
08/27/2013US8516683 Methods of making a radio frequency identification (RFID) tags
08/22/2013WO2013123287A1 Charge ordered vertical transistors
08/22/2013WO2013123004A1 Selective epitaxial germanium growth on silicon-trench fill and in situ doping
08/22/2013WO2013122781A1 Scalable gate logic non-volatile memory cells and arrays
08/22/2013WO2013122776A1 High performance multi-finger strained silicon germanium channel pfet and method of fabrication
08/22/2013WO2013121195A1 Electronic devices
08/22/2013WO2013120990A1 Hemt heterostructure and a method of hemt manufacturing
08/22/2013WO2013120329A1 Flash memory and method for fabricating the same
08/22/2013US20130217218 Fabricating method of non-volatile memory
08/22/2013US20130217216 Unguarded Schottky Barrier Diodes with Dielectric Underetch at Silicide Interface
08/22/2013US20130217198 Localized implant into active region for enhanced stress
08/22/2013US20130217197 Integration technique using thermal oxide select gate dielectric for select gate and replacement gate for logic
08/22/2013US20130217196 High Voltage Device and Manufacturing Method Thereof
08/22/2013US20130217194 Mos transistor, manufacturing method thereof, and semiconductor device
08/22/2013US20130217192 Method for manufacturing thin film transistor
08/22/2013US20130217191 Thin film transistor, display device having thin film transistor, and method for manufacturing the same
08/22/2013US20130217180 Low-Temperature Fabrication of Metal Oxide Thin Films and Nanomaterial-Derived Metal Composite Thin Films
08/22/2013US20130217174 Method for manufacturing a semiconductor device
08/22/2013US20130215690 Memory devices having select gates with p type bodies, memory strings having separate source lines and methods
08/22/2013US20130215684 Nonvolatile memory device, method for operating the same, and method for fabricating the same
08/22/2013US20130215352 Liquid crystal display device and manufacturing method thereof
08/22/2013US20130215351 Reflective liquid crystal display panel and device using same
08/22/2013US20130214854 Semiconductor device and method of driving the same
08/22/2013US20130214847 Vertically base-connected bipolar transistor
08/22/2013US20130214821 High voltage semiconductor element and operating method thereof
08/22/2013US20130214778 Apparatus and method for reducing a transient signal in a magnetic field sensor
08/22/2013US20130214434 Semiconductor device and manufacturing method thereof
08/22/2013US20130214417 Methods of forming a metal silicide region on at least one silicon structure
08/22/2013US20130214395 Semiconductor device and manufacturing method
08/22/2013US20130214394 Semiconductor device
08/22/2013US20130214393 Semiconductor device and manufacturing method thereof
08/22/2013US20130214392 Methods of forming stepped isolation structures for semiconductor devices using a spacer technique
08/22/2013US20130214391 Lateral-Dimension-Reducing Metallic Hard Mask Etch
08/22/2013US20130214384 Low harmonic rf switch in soi
08/22/2013US20130214383 Method for forming isolation structure
08/22/2013US20130214382 Method of forming substrate contact for semiconductor on insulator (soi) substrate
08/22/2013US20130214381 Methods of forming isolation structures for semiconductor devices
08/22/2013US20130214378 Semiconductor device including a mosfet and schottky junction
08/22/2013US20130214377 Solid-state imaging device with channel stop region with multiple impurity regions in depth direction and method for manufacturing the same
08/22/2013US20130214369 Pressure sensor
08/22/2013US20130214367 Mems-based dual and single proof-mass accelerometer methods and apparatus
08/22/2013US20130214366 Mems element and electrical device using the same
08/22/2013US20130214365 Mems pressure transducer assembly and method of packaging same
08/22/2013US20130214360 Method and apparatus for reducing flicker noise in a semiconductor device
08/22/2013US20130214358 Low external resistance etsoi transistors
08/22/2013US20130214357 Non-planar mosfet structures with asymmetric recessed source drains and methods for making the same
08/22/2013US20130214355 High voltage ldmos device
08/22/2013US20130214354 Semiconductor structure and method for forming the same
08/22/2013US20130214353 Field Effect Transistor Having Multiple Effective Oxide Thicknesses and Corresponding Multiple Channel Doping Profiles
08/22/2013US20130214352 Dual Gate Lateral MOSFET
08/22/2013US20130214351 Semiconductor device and method of manufacturing semiconductor device
08/22/2013US20130214350 Integrated trench mosfet with trench schottky rectifier
08/22/2013US20130214349 Trench MOSFET Structure and Method of Making the Same
08/22/2013US20130214348 Semiconductor device and method of manufacturing semiconductor device
08/22/2013US20130214346 Non-volatile memory cell and logic transistor integration
08/22/2013US20130214345 Nonvolatile semiconductor memory device
08/22/2013US20130214344 Non-volatile memory device and method of manufacturing the same
08/22/2013US20130214343 Semiconductor device and method of manufacturing the same
08/22/2013US20130214342 Nonvolatile semiconductor storage device and method of manufacture thereof
08/22/2013US20130214340 Semiconductor structure and manufacturing method of the same
08/22/2013US20130214338 Semiconductor device
08/22/2013US20130214336 Method for filling trench with metal layer and semiconductor structure formed by using the same
08/22/2013US20130214335 Replacement Gate Approach for High-K Metal Gate Stacks by Using a Multi-Layer Contact Level
08/22/2013US20130214332 Nanogrid channel fin-fet transistor and biosensor
08/22/2013US20130214331 Method for treating a substrate and a substrate
08/22/2013US20130214330 Transistor Having Increased Breakdown Voltage
08/22/2013US20130214329 Transistor and method for forming the same
08/22/2013US20130214327 Semiconductor device and method for producing the same
08/22/2013US20130214326 Bidirectional Semiconductor Device for Protection Against Electrostatic Discharges, Usable on Silicon on Insulator
08/22/2013US20130214324 Semiconductor device and peeling off method and method of manufacturing semiconductor device
08/22/2013US20130214299 Thin film transistor array panel and manufacturing method thereof
08/22/2013US20130214291 Semiconductor element and manufacturing method therefor
08/22/2013US20130214290 Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
08/22/2013US20130214289 Short-Resistant Metal-Gate MOS Transistor and Method of Forming the Transistor
08/22/2013US20130214287 Semiconductor device and manufacturing method thereof
08/22/2013US20130214285 Semiconductor Component and Method for Producing a Semiconductor Component
08/22/2013US20130214284 Method for the reuse of gallium nitride epitaxial substrates
08/22/2013US20130214283 Power Transistor Having Segmented Gate
08/22/2013US20130214282 Iii-n on silicon using nano structured interface layer
08/22/2013US20130214281 Method of growing a high quality iii-v compound layer on a silicon substrate
08/22/2013US20130214280 Display device and semiconductor device
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