Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2013
08/22/2013US20130214275 Transistor having a narrow in-substrate collector region for reduced base-collector junction capacitance and a method of forming the transistor
08/22/2013US20130214273 Oxide semiconductor film and semiconductor device
08/22/2013US20130214271 P-Type Semiconductor Material and Semiconductor Device
08/22/2013US20130214270 Semiconductor device and manufacturing method thereof
08/22/2013US20130214269 Thin film transistor
08/22/2013US20130214264 Carbene metal complexes as oled materials
08/22/2013US20130214253 Manufacturing method of graphene substrate and graphene substrate
08/22/2013US20130214252 Controlled synthesis of monolithically-integrated graphene structure
08/22/2013US20130214250 Nitride based semiconductor light-emitting device
08/22/2013US20130214243 Nanowires made of novel precursors and method for the production thereof
08/22/2013US20130214242 Integrated Circuitry Components, Switches, And Memory Cells
08/22/2013US20130214235 Resistive memory having rectifying characteristics or an ohmic contact layer
08/22/2013US20130214179 Method for the thermal photoswitching of spin-transition materials, and uses thereof
08/22/2013US20130213139 Mems vacuum level monitor in sealed package
08/22/2013DE112011103772T5 Halbleiterbauelement und Verfahren zum Herstellen desselben Of the same semiconductor device and method of manufacturing
08/22/2013DE112011102837T5 Speichereinrichtung und Halbleitereinrichtung Storage device and semiconductor device
08/22/2013DE102013202518A1 P-Typ-Halbleitermaterial und Halbleitervorrichtung P-type semiconductor material and semiconductor device
08/22/2013DE102013200046A1 Verfahren zum Herstellen eines Siliciumcarbid-Halbleiterbauelements und Siliciumcarbid-Halbleiterbauelement A method of manufacturing a silicon carbide semiconductor device and the silicon carbide semiconductor device
08/22/2013DE102012205320A1 Polysiliziumentfernung durch Trockenätzung in Austauschgates Polysilicon removal by dry etching in exchange Gates
08/22/2013DE102012102533B3 Integrierte Leistungstransistorschaltung mit Strommesszelle und Verfahren zu deren Herstellung sowie eine Anordnung diese enthaltend Integrated power transistor circuit with current sensing cell and process for their preparation and to an arrangement comprising these
08/22/2013DE102012023429B3 Pressure sensor i.e. complementary metal-oxide-semiconductor compatible pressure sensor, for measuring ambient pressure, has insulator arranged between substrate and electrode, where substrate and electrode exhibits same composition
08/22/2013DE102004042149B4 Halbleitervorrichtung und Schaltungen mit der Halbleitervorrichtung sowie mit einer Treibeschaltung für die Halbleitervorrichtung Semiconductor device and circuits with the semiconductor device and with a drive circuit for the semiconductor device
08/21/2013EP2629356A1 Composite solid polymer electrolyte, its use, and printed electronics manufactured by means of said composite solid polymer electrolyte
08/21/2013EP2629334A2 Power transistor having segmented gate
08/21/2013EP2629333A2 Semiconductor device and method for producing the same
08/21/2013EP2629332A2 Transistor having increased breakdown voltage
08/21/2013EP2629320A2 Mask structure and method for defect-free heteroepitaxial deposition
08/21/2013EP2628743A1 Nitrogenated aromatic compound, organic semiconductor material, and organic electronic device
08/21/2013EP2628742A1 Chalcogen-containing aromatic compound, organic semiconductor material, and organic electronic device
08/21/2013EP2628186A2 Vertical semiconductor device with thinned substrate
08/21/2013EP2628185A1 Semiconductor heterostructure and transistor of hemt type, in particular for low-frequency low-noise cryogenic applications.
08/21/2013EP2628184A1 Method for switching a normally on field effect transistor
08/21/2013EP2628172A1 Field-effect transistor on a self-assembled semiconductor well
08/21/2013CN203150559U Semiconductor element trench type structure
08/21/2013CN203150558U Semiconductor element structure with active area trenches arranged with distributed mode
08/21/2013CN203150557U Reverse direction GPP high voltage diode chip in automobile module group
08/21/2013CN203150556U High-voltage high-speed thyristor
08/21/2013CN203150555U Quick switching-on thyristor
08/21/2013CN203150554U High-voltage well layout structure for low-voltage device in high-voltage circuit
08/21/2013CN1992350B Thin film transistor for display panel
08/21/2013CN103262414A Method and circuit for switching a memristive device in an array
08/21/2013CN103262252A Diode, use thereof, and a method for producing the same
08/21/2013CN103262251A Generator device for supplying voltage to a motor vehicle
08/21/2013CN103262250A Semiconductor device and display apparatus
08/21/2013CN103262249A Tunnel field effect transistor
08/21/2013CN103262248A Semiconductor device and production method therefor
08/21/2013CN103262247A Semiconductor device
08/21/2013CN103262246A Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETS
08/21/2013CN103262245A Non-planar device having uniaxially strained fin and method of making same
08/21/2013CN103262244A Transistors with isolation regions
08/21/2013CN103262243A Nanowire field-effect device with multiple gates
08/21/2013CN103262225A Method for producing semiconductor device
08/21/2013CN103262224A Field-effect transistor on a self-assembled semiconductor well
08/21/2013CN103262218A Process for manufacture of silicon carbide semiconductor device
08/21/2013CN103262214A Semiconductor substrate, semiconductor device, and method for producing semiconductor substrate
08/21/2013CN103261959A Semiconductor device, method for manufacturing semiconductor device, and liquid crystal display device
08/21/2013CN103258861A Trench schottky barrier diode and manufacturing method thereof
08/21/2013CN103258860A Semiconductor memory and manufacturing method thereof
08/21/2013CN103258859A Indium oxide thin film transistor and manufacturing method thereof
08/21/2013CN103258858A Grapheme nanometer stripe field-effect tube of three-material heterogeneous grid structure
08/21/2013CN103258857A Field effect transistor using oxide semicondutor and method for manufacturing the same
08/21/2013CN103258856A Thin film transistor
08/21/2013CN103258855A Polycrystalline silicon thin film transistor based on solid-phase crystallization technology and manufacturing method thereof
08/21/2013CN103258854A Groove MOS and design method for body region connection of groove MOS
08/21/2013CN103258853A Semiconductor device having super junction structure and method for manufacturing the same
08/21/2013CN103258852A Semiconductor structure and formation method
08/21/2013CN103258851A Isolation element and manufacturing method thereof
08/21/2013CN103258850A Grapheme nano-ribbon field effect transistor and preparation method thereof
08/21/2013CN103258849A Grapheme field effect transistor and preparation method thereof
08/21/2013CN103258848A Insulated gate bipolar transistor (IGBT) device with positive temperature coefficient emitter ballast resistance
08/21/2013CN103258847A Reverse block (RB)-insulated gate bipolar transistor (IGBT) device provided with double-faced field stop with buried layers
08/21/2013CN103258846A Dual gate lateral mosfet
08/21/2013CN103258845A Semiconductor structure and forming method thereof
08/21/2013CN103258844A Method of growing a high quality iii-v compound layer on a silicon substrate
08/21/2013CN103258843A Multi-hole substrate for terahertz Schottky diode
08/21/2013CN103258842A Double-layer shallow groove isolation structure, manufacturing method and transverse diffusion metal oxide semiconductor (MOS) tube
08/21/2013CN103258827A Array substrate, manufacturing method of array substrate and display device of array substrate
08/21/2013CN103258823A Semiconductor structure and formation method thereof
08/21/2013CN103258814A LDMOS SCR for protection against integrated circuit chip ESD
08/21/2013CN103258813A Testing structure and forming method of part depletion type SOI MOSFET
08/21/2013CN103258745A Thin film transistor, manufacturing method of thin film transistor, array substrate and display device
08/21/2013CN103258744A Method of manufacturing semiconductor device and semiconductor device
08/21/2013CN103258743A Thin film transistor, thin film transistor array substrate and method of fabricating same
08/21/2013CN103258741A Nanowire field effect transistor and forming method thereof
08/21/2013CN103258738A Superlattice nanowire field effect transistor and forming method thereof
08/21/2013CN103258737A Microwave power transistor with double emitter regions and double poles and preparation method thereof
08/21/2013CN103258725A Method of forming thin film interconnect and thin film interconnect
08/21/2013CN103258724A Three-dimensional semiconductor device with large-aspect-ratio FIN structure and formation method thereof
08/21/2013CN103258721A Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
08/21/2013CN103258717A Epitaxial substrate for electronic device and manufacturing method thereof
08/21/2013CN103257491A Semiconductor device
08/21/2013CN102347360B Semiconductor device and manufacture method thereof
08/21/2013CN102257621B Method for manufacturing transistor
08/21/2013CN102197489B Underlayer film for image formation
08/21/2013CN102197488B Thin-film transistor
08/21/2013CN102074578B Semiconductor device and method for producing the same
08/21/2013CN102054868B Semiconductor device and manufacturing method thereof
08/21/2013CN101946323B New thermoelectric material and producing method thereof, and thermoelectric conversion element using the same
08/21/2013CN101794823B Thin film transistor and display device
08/21/2013CN101714506B Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the same
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