Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2004
09/09/2004US20040173867 Bulk-isolated PN diode and method of forming a bulk-isolated PN diode
09/09/2004US20040173861 Transistor with nitrogen-hardened gate oxide
09/09/2004US20040173860 Semiconductor device and method of manufacturing the same
09/09/2004US20040173859 Drain extended MOS devices with self-aligned floating region and fabrication methods therefor
09/09/2004US20040173857 Mask rom, and fabrication method thereof
09/09/2004US20040173856 Method for manufacturing MOS transistor and semiconductor device employing MOS transistor made using the same
09/09/2004US20040173855 Semiconductor device and method of manufacturing the same
09/09/2004US20040173853 System and method to reduce noise in a substrate
09/09/2004US20040173852 System and method to reduce noise in a substrate
09/09/2004US20040173851 Semiconductor device and method of manufacturing the same
09/09/2004US20040173849 Hybrid circuit and electronic device using same
09/09/2004US20040173847 Method of controlling floating body effects in an asymmetrical SOI device
09/09/2004US20040173846 Diffused MOS devices with strained silicon portions and methods for forming same
09/09/2004US20040173845 Semiconductor device having trench gate structure and method for manufacturing the same
09/09/2004US20040173844 Trench power MOSFET with planarized gate bus
09/09/2004US20040173843 Semiconductor device and fabrication method therefor
09/09/2004US20040173842 Nonvolatile semiconductor memory device and method for manufacturing the same
09/09/2004US20040173840 Method of making floating gate non-volatile memory cell with low erasing voltage having double layer gate dielectric
09/09/2004US20040173839 Nonvolatile memory cell
09/09/2004US20040173837 Multilayer electrode for a ferroelectric capacitor
09/09/2004US20040173830 Nonvolatile semiconductor memory device with stable ferroelectric capacitor
09/09/2004US20040173829 Ferroelectric memory devices and methods for fabricating the same
09/09/2004US20040173828 Magnetic memory device and method of manufacturing the same
09/09/2004US20040173827 Memory cell array including ferroelectric capacitors, method for making the same, and ferroelectric memory device
09/09/2004US20040173826 Ferroelectric memory device and method for manufacturing the same
09/09/2004US20040173825 Semiconductor devices and methods of forming the same
09/09/2004US20040173820 High withstand voltage semiconductor device
09/09/2004US20040173819 Color display device
09/09/2004US20040173817 Integrated photodetector and heterojunction bipolar transistors
09/09/2004US20040173815 Strained-channel transistor structure with lattice-mismatched zone
09/09/2004US20040173814 Thyristor switch with turn-off current shunt, and operating method
09/09/2004US20040173813 Thyristor switch with turn-off current shunt, and operating method
09/09/2004US20040173812 Shallow trench isolation process
09/09/2004US20040173801 Schottky diode having overcurrent protection and low reverse current
09/09/2004US20040173800 Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same
09/09/2004US20040173799 CMOS imager with enhanced transfer of charge and low voltage operation and method of formation
09/09/2004US20040173798 Micro-mechanically strained semiconductor film
09/09/2004US20040173797 Thin film transistor array panel for liquid crystal display
09/09/2004US20040173796 Complementary thin film transistor circuit, electro-optical device, and electronic apparatus
09/09/2004US20040173795 Amorphous-silicon thin film transistor and shift resister having the same
09/09/2004US20040173790 Method of forming strained silicon on insulator substrate
09/09/2004US20040173789 Semiconductor devices and methods
09/09/2004US20040173788 P-type semiconductor and semiconductor metero material and manufacturing methods thereof
09/09/2004US20040173660 Method of soldering
09/09/2004US20040173567 Method of forming a lamination film pattern and improved lamination film pattern
09/09/2004US20040173027 Semiconductor pressure sensor having diaphragm
09/09/2004DE10361829A1 Halbleiterbauelement mit epitaktischer C49-Titan-Silizid(TiSi2)-Schicht und Verfahren zur Herstellung desselben Of the same semiconductor device with an epitaxial C49-titanium silicide (TiSi2) layer and processes for preparing
09/09/2004DE10350770A1 Druckkontakt-Halbleiterbauelement mit Blindsegment The pressure contact type semiconductor device having dummy segment
09/09/2004DE10309728A1 Verfahren zur Herstellung von Si-Wafern mit einer Praseodymsilikat-Schicht A process for production of Si wafers with a praseodymium-layer
09/09/2004DE10308970A1 Halbleiterspeicherzelle und Verfahren zu deren Herstellung A semiconductor memory cell and process for their preparation
09/09/2004DE10308888A1 Two-capacitor apparatus in or on a substrate where the outer capacitor partially encloses the inner capacitor useful in computer and semiconductor technology, e.g. for dynamic random access memory (DRAM) components
09/09/2004DE10306597A1 Semiconductor structure with increased breakdown voltage has recess in buried semiconductor layer with semiconductor area lower in he substrate than the buried layer
09/09/2004DE10301939A1 FET whose gate electrodes consist of monocrystalline silicon in trench, insulated by gate oxide from source and/or drain, with gate electrodes of same material as source
09/09/2004DE102004009254A1 Halbleiter-Drucksensorvorrichtung A semiconductor pressure sensor device
09/09/2004DE102004009115A1 Halbleitermessvorrichtung, die verschiedene Widerstandstypen verwendet Semiconductor measuring device that uses various types of resistance
09/09/2004DE102004008773A1 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
09/09/2004DE102004004790A1 Verfahren und Anordnung zum Verbessern des elektrischen Widerstands von Leiterbahnen Method and apparatus for improving the electrical resistance of interconnects
09/09/2004DE102004002446A1 Anzeigevorrichtung und Verfahren zu deren Herstellung Display device, and process for their preparation
09/08/2004EP1455397A2 Vertical MOS device and method of making the same
09/08/2004EP1455396A1 Flat panel display with thin film transistor (TFT)
09/08/2004EP1455393A1 Complementary mis device
09/08/2004EP1455386A2 Semiconductor device and fabrication method therefor
09/08/2004EP1454879A1 Process for producing thin oxide film and production apparatus
09/08/2004EP1454364A2 Diode circuit and method for making same
09/08/2004EP1454363A1 Semiconductor arrangement with a pn transition and method for the production of a semiconductor arrangement
09/08/2004EP1454362A1 Organic field effect transistor with off-set threshold voltage and the use thereof
09/08/2004EP1454361A1 Trench mosfet device with polycrystalline silicon source contact structure
09/08/2004EP1454360A1 TRENCH MOSFET DEVICE WITH IMPROVED ON−RESISTANCE
09/08/2004EP1454359A2 Semiconductor device and method for production thereof
09/08/2004EP1454358A1 A method for fabricating high aspect ratio electrodes
09/08/2004EP1454353A1 Method of forming narrow trenches in semiconductor substrates
09/08/2004EP1454352A1 Method for forming trench mosfet device with low parasitic resistance
09/08/2004EP1454349A2 Trilayered beam mems device and related methods
09/08/2004EP1454342A2 A method of forming differential spacers for individual optimization of n-channel and p-channel transistors
09/08/2004EP1454333A1 Mems device having a trilayered beam and related methods
09/08/2004EP1381639B1 Conjugated polymers containing spirobifluorene units and fluorene units, and the use thereof
09/08/2004CN2640156Y Built-in visual door bell display device
09/08/2004CN2640046Y Improved glass sealed diode
09/08/2004CN1528020A Trench MOSFET with structure having low gate charge
09/08/2004CN1527480A Method of reducing the area of transconductance capacitor filter
09/08/2004CN1527406A Structure of variable radio-frequency capacitor and producing method thereof
09/08/2004CN1527405A Polysilicon thin film, its producing method and thin film transistor produced with the same film
09/08/2004CN1527404A Film transistor structure with lightly doped drain area and its manufacture
09/08/2004CN1527403A Great power MOSFET device and its manufacture
09/08/2004CN1527402A Semiconductor device and producing method thereof
09/08/2004CN1527401A Double-grid high-voltage P-type MOS transistor
09/08/2004CN1527400A Double-grid high-voltage N-type Mos transistor
09/08/2004CN1527399A Field-effect transistor
09/08/2004CN1527398A Combined-grid FET
09/08/2004CN1527388A 静态随机存取存储器 Static random access memory
09/08/2004CN1527379A Deformed channel transistor structure with asymmetrical lattice area and its manufacture
09/08/2004CN1527369A Semiconductor device with slot structure and producing method thereof
09/08/2004CN1527368A Semiconductor device and producing method thereof
09/08/2004CN1527362A Gate dielectric layer, its electric performace improving method and Mos crytsal
09/08/2004CN1527360A Method for producing semiconductor thin film
09/08/2004CN1527357A Insulating layer coating substrate for strain semiconductor and its making process
09/08/2004CN1527341A Semiconductor photoelectric cathode and phototube using the same semiconductor photoelctric cathode
09/08/2004CN1527260A Flate-plate display device with thin film transistor
09/08/2004CN1527117A 液晶显示装置 The liquid crystal display device
09/08/2004CN1527115A Thin film transistor and electronic device and producing method thereof