H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2004
12/09/2004	US20040245525 Thin film integrated circuit device
12/09/2004	US20040245524 Thin film transistor and manufacturing method thereof
12/09/2004	US20040245523 Circular thin film transistor structure
12/09/2004	US20040245519 Thin film transistor device and method of manufacturing same
12/09/2004	US20040245517 Diode/superionic conductor/polymer memory structure
12/09/2004	US20040245492 ABO3 with an A-site compensation component that compensates for a vacancy of an A site, and a B-site compensation component which compensates for a vacancy of a B site; film having hysteresis characteristics with excellent squareness loop which can be used for the simple matrix type ferroelectric memory
12/09/2004	US20040244672 Substituted donor atoms in silicon crystal for quantum computer
12/09/2004	DE4318466B4 Verfahren zur Herstellung eines mikromechanischen Sensors A process for producing a micromechanical sensor
12/09/2004	DE202004011369U1 MOSFET, has ratio of width of each insulator-filled well zone to width of drift zone set so that output capacitance of MOSFET is minimized
12/09/2004	DE19747777B4 Verfahren zum Herstellen eines Halbleiterbauteils A method of manufacturing a semiconductor device
12/09/2004	DE19744098B4 Verfahren zur Herstellung einer Matrix aus Dünnschichttransistoren für Flüssigkristallbildschirme A process for producing a matrix of thin film transistors for liquid-crystal screens
12/09/2004	DE19502862B4 Sensor auf FET-Basis FET-based sensor
12/09/2004	DE10321494A1 Semiconductor production process for high aspect ratio memory circuits forms surfaces perpendicular and not perpendicular to substrate and ion implants to give selective wet etch
12/09/2004	DE10320874A1 Integrated semiconductor memory has memory cell with inversion channel and small gate dielectric thickness permitting thermal majority carriers to tunnel to gate electrode
12/09/2004	DE102004023455A1 Kapazitive Sensoranordnung für eine dynamische Größe Capacitive sensor array dynamic quantity
12/09/2004	DE102004023207A1 Kapazitiver Sensor für eine physikalische Größe Capacitive sensor for a physical quantity
12/09/2004	DE102004002723A1 Halbleiterbauelement mit einem SOI-Aufbau A semiconductor device with a SOI structure
12/09/2004	DE102004001502A1 Halbleitervorrichtung Semiconductor device
12/09/2004	DE10122362B4 Durch Feldeffekt steuerbares Halbleiterbauelement Field effect-controllable semiconductor component
12/08/2004	EP1484800A1 Quantum device
12/08/2004	EP1484790A1 Semiconductor device and method for fabricating the same
12/08/2004	EP1484789A1 Non-uniform minority carrier lifetime distributions in high performance silicon power devices
12/08/2004	EP1483793A2 Schottky power diode comprising a sicoi substrate and the method of producing one such diode
12/08/2004	EP1483792A1 Detector arrangement, method for the detection of electrical charge carriers and use of an ono field effect transistor of r detection of an electrical charge
12/08/2004	EP1483791A1 Trench dmos transistor having improved trench structure
12/08/2004	EP1483784A2 Method for forming thin film layers by simultaneous doping and sintering
12/08/2004	EP1483783A2 Strained si based layer made by uhv-cvd; and devices therein
12/08/2004	EP1192419A4 Integrated and multi-axis sensor assembly and packaging
12/08/2004	EP0870319B1 A method for the manufacturing of micromachined structures
12/08/2004	CN1554141A An arrangement for ESD protection of an integrated circuit
12/08/2004	CN1554126A Surface modifying layers for organic thin film transistors
12/08/2004	CN1554124A Rectifier of thermaly moving electrons and method for converting thermal energy into electric energy by using the same
12/08/2004	CN1554123A Display unit and production method therefor, and projection type display unit
12/08/2004	CN1554122A Thin film semiconductor device and method for fabricating the same
12/08/2004	CN1554121A Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment and methods of fabricating same
12/08/2004	CN1554099A Low-voltage and interface damage-free polymer memory device
12/08/2004	CN1553519A 半导体器件 Semiconductor devices
12/08/2004	CN1553518A Thin-film transistor array substrate structure
12/08/2004	CN1553517A Thin-film transistors and producing method thereof
12/08/2004	CN1553516A Thin film transistors with self aligned light dosed resource structure and their manufacture
12/08/2004	CN1553515A Thin-film transistor structure and producing method thereof
12/08/2004	CN1553514A Ion induced field effect transistor and producing method thereof
12/08/2004	CN1553507A Semiconductor device and method of fabrication thereof
12/08/2004	CN1553504A Protective transistors
12/08/2004	CN1553494A 半导体集成电路器件 The semiconductor integrated circuit device
12/08/2004	CN1553488A Thin-film transistor structure and producing method thereof
12/08/2004	CN1553271A 半导体器件 Semiconductor devices
12/08/2004	CN1553270A 半导体器件 Semiconductor devices
12/08/2004	CN1553268A Liquid-crystal displaying device and its internal sampling circuit
12/08/2004	CN1553264A Apparatus for data storage and data controlling display in LCOS
12/08/2004	CN1179419C Integrated circuit chip and display device therewith
12/08/2004	CN1179418C Non-volatile semiconductor memory device
12/08/2004	CN1179403C Semiconductor device and its producing method
12/08/2004	CN1179402C Production technology of semiconductor device
12/08/2004	CN1179400C Semiconductor layer doping method and thin-film semiconductor device and its manufacturing method
12/08/2004	CN1179397C Method of manufacturing semiconductor having device composite buffer layer
12/08/2004	CN1179238C LCD device
12/08/2004	CN1179191C Microelectromechanically tunable confocel VCSEL and fabry-perot filter
12/07/2004	US6829173 Semiconductor memory device capable of accurately writing data
12/07/2004	US6829172 Programming of nonvolatile memory cells
12/07/2004	US6829171 Memory device trapping charges in insulating film to store information in non-volatile manner
12/07/2004	US6829165 Non-volatile semiconductor memory device and method of actuating the same
12/07/2004	US6829152 Load drive circuit using flywheel diode
12/07/2004	US6829135 Layered product, capacitor, electronic component and method and apparatus manufacturing the same
12/07/2004	US6829127 High performance capacitor structure
12/07/2004	US6829021 Thin film transistor crystal liquid display device including plural conductive beads and manufacturing method thereof
12/07/2004	US6828951 Semiconductor display device
12/07/2004	US6828950 Display device and method of driving the same
12/07/2004	US6828817 Testing device included in the electrooptic device
12/07/2004	US6828805 Uneven pattern sensing device
12/07/2004	US6828734 Display device
12/07/2004	US6828725 Light emitting device
12/07/2004	US6828690 Non-uniform minority carrier lifetime distributions in high performance silicon power devices
12/07/2004	US6828679 Solid image pickup device
12/07/2004	US6828655 Semiconductor film with low crystal defect and semiconductor device and display apparatus using the semiconductor film
12/07/2004	US6828654 Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
12/07/2004	US6828650 Bipolar junction transistor structure with improved current gain characteristics
12/07/2004	US6828648 Semiconductor device and method of manufacturing the same
12/07/2004	US6828645 Voltage withstanding structure for a semiconductor device
12/07/2004	US6828644 Semiconductor device with reduced parasitic capacitance between impurity diffusion regions
12/07/2004	US6828638 Decoupling capacitors for thin gate oxides
12/07/2004	US6828636 Semiconductor device isolated resistive zone
12/07/2004	US6828635 Method for making high-gain vertical bipolar junction transistor structures compatible with CMOS process
12/07/2004	US6828634 Semiconductor device with two types of FET's having different gate lengths and its manufacture method
12/07/2004	US6828633 Semiconductor device formed on silicon-on-insulator substrate
12/07/2004	US6828632 Stable PD-SOI devices and methods
12/07/2004	US6828631 High-voltage transistor with multi-layer conduction region
12/07/2004	US6828630 CMOS device on ultrathin SOI with a deposited raised source/drain, and a method of manufacture
12/07/2004	US6828629 Semiconductor device and method of fabricating the same
12/07/2004	US6828628 Diffused MOS devices with strained silicon portions and methods for forming same
12/07/2004	US6828627 Semiconductor device
12/07/2004	US6828626 Semiconductor device with vertical transistors
12/07/2004	US6828625 Protective layer in memory device and method therefor
12/07/2004	US6828624 Nonvolatile semiconductor memory device covered with insulating film which is hard for an oxidizing agent to pass therethrough
12/07/2004	US6828623 Floating gate memory device with homogeneous oxynitride tunneling dielectric
12/07/2004	US6828622 Nonvolatile semiconductor memory device and its manufacturing method
12/07/2004	US6828621 Nonvolatile semiconductor memory device and method for fabricating the same
12/07/2004	US6828619 Nonvolatile semiconductor storage device
12/07/2004	US6828618 Split-gate thin-film storage NVM cell
12/07/2004	US6828612 Semiconductor memory device

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