H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2004
11/16/2004	US6818505 Non-volatile semiconductor memory device and manufacturing method thereof
11/16/2004	US6818504 Processes and structures for self-aligned contact non-volatile memory with peripheral transistors easily modifiable for various technologies and applications
11/16/2004	US6818493 Selective metal oxide removal performed in a reaction chamber in the absence of RF activation
11/16/2004	US6818492 Semiconductor device and manufacturing method thereof
11/16/2004	US6818490 Method of fabricating complementary high-voltage field-effect transistors
11/16/2004	US6818489 Semiconductor device having LDD-type source/drain regions and fabrication method thereof
11/16/2004	US6818488 Process for making a gate for a short channel CMOS transistor structure
11/16/2004	US6818487 Self-aligned, planarized thin-film transistors, devices employing the same, and methods of fabrication thereof
11/16/2004	US6818486 Method of electronic component fabrication and an electronic component
11/16/2004	US6818485 Thin film transistor, thin film transistor array substrate, liquid crystal display device, and electroluminescent display device
11/16/2004	US6818484 Method of forming predominantly <100> polycrystalline silicon thin film transistors
11/16/2004	US6818482 Method for trench isolation for thyristor-based device
11/16/2004	US6818319 Buffer layer as a diffusion barrier layer is deposited between the silicon film and the glass substrate to obstruct the diffusion of the impurities
11/16/2004	US6818104 Anodizing apparatus
11/11/2004	WO2004097945A1 Method for production of a semiconductor device with auto-aligned metallisations
11/11/2004	WO2004097944A2 Silicon carbide mosfets with integrated antiparallel junction barrier schottky free wheeling diodes and methods of fabricating same
11/11/2004	WO2004097943A1 Semiconductor device and method for manufacturing same
11/11/2004	WO2004097942A1 Semiconductor manufacturing method
11/11/2004	WO2004097941A1 Electronic device comprising a field-effect transistor for high-frequency applications
11/11/2004	WO2004097930A1 Semiconductor device and method for fabricating the same
11/11/2004	WO2004097926A1 Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
11/11/2004	WO2004097925A1 Method for manufacturing semiconductor device
11/11/2004	WO2004097924A1 Compound semiconductor epitaxial substrate
11/11/2004	WO2004097922A1 Production method for semiconductor device
11/11/2004	WO2004097849A1 Electrode material and semiconductor device
11/11/2004	WO2004097836A2 Mirror image memory cell transistor pairs featuring poly floating spacers
11/11/2004	WO2004096697A1 Functional element and production method therefor and functional system and functional material
11/11/2004	WO2004084312A3 Semiconductor device with isolation layer
11/11/2004	WO2004084264A3 DUAL STRAIN-STATE SiGe LAYERS FOR MICROELECTRONICS
11/11/2004	WO2004082018A3 Electronic component comprising a semiconductor chip and a plastic housing, and method for producing the same
11/11/2004	WO2004077501A3 Field-effect transistor and method for manufacturing field-effect transistor
11/11/2004	WO2004077446A8 Nonvolatile semiconductor storage device
11/11/2004	WO2004072941A3 Display device with electrostatic discharge protection circuitry
11/11/2004	WO2004066350A3 Embedded capacitor associated with a sram cell
11/11/2004	WO2003100833A3 Method of forming quantum dots for extended wavelength operation
11/11/2004	US20040225056 Dispersions of organic semiconductors in a solvent mixture of at least two different organic solvents, characterized in that each of the solvents on its own has a boiling point of below 200 degrees C. and a melting point of 15 degrees C. or less
11/11/2004	US20040224530 Process for passivating polysilicon and process for fabricating polysilicon thin film transistor
11/11/2004	US20040224529 Method of manufacturing semiconductor device
11/11/2004	US20040224517 Semiconductor device and method of manufacturing the same
11/11/2004	US20040224514 Manufacturing method of semiconductor device
11/11/2004	US20040224492 Structure for an LDMOS transistor and fabrication method for thereof
11/11/2004	US20040224490 Apparatus and manufacturing process of carbon nanotube gate field effect transistor
11/11/2004	US20040224487 Amorphous silicon crystallization method
11/11/2004	US20040224485 Methods of forming capacitors
11/11/2004	US20040224476 Semiconductor integrated circuit device
11/11/2004	US20040224472 High voltage MOS transistor with up-retro well
11/11/2004	US20040224471 Integration system via metal oxide conversion
11/11/2004	US20040224470 Method for fabricating a p-type shallow junction using diatomic arsenic
11/11/2004	US20040224469 Method for forming a strained semiconductor substrate
11/11/2004	US20040224468 Method for manufacturing a floating gate of a dual gate of semiconductor device
11/11/2004	US20040224464 Method of making vertical diode structures
11/11/2004	US20040224463 Self-aligned process using indium gallium arsenide etching to form reentry feature in heterojunction bipolar transistors
11/11/2004	US20040224462 Method for forming a dielectric layer and related devices
11/11/2004	US20040224461 Method to fabricate high-performance NPN transistors in a BiCMOS process
11/11/2004	US20040224460 Self-aligned process using indium gallium arsenide etching to form reentry feature in heterojunction bipolar transistors
11/11/2004	US20040224459 Layered structure, method for manufacturing the same, and semiconductor element
11/11/2004	US20040224457 Dual-counterdoped channel field effect transistor and method
11/11/2004	US20040224455 Superjunction device and method of manufacture therefore
11/11/2004	US20040224453 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
11/11/2004	US20040224451 Dual gate material process for cmos technologies
11/11/2004	US20040224448 Semiconductor thin film, thin film transistor, method for manufacturing same, and manufacturing equipment of semiconductor thin film
11/11/2004	US20040224446 [structure of thin-film transistor and method and equipment for fabricating the structure]
11/11/2004	US20040224445 On chip capacitor
11/11/2004	US20040224241 Thin film transistor array panel, manufacturing method thereof, and mask therefor
11/11/2004	US20040224188 capacitor that improves the interface between the ceramic film and the electrode; improved fatigue characteristics; crystallizing a raw material including a complex oxide by heat treatment in pressure and oxygen;
11/11/2004	US20040223389 Semiconductor device
11/11/2004	US20040223372 Electrically programmable and electrically erasable semiconductor memory device
11/11/2004	US20040223356 Non-volatile memory device
11/11/2004	US20040223288 Non-linear capacitors
11/11/2004	US20040223274 Switching circuit device
11/11/2004	US20040223140 TFT array inspection apparatus
11/11/2004	US20040223090 Liquid crystal display device, manufacturing method thereof, and fabrication apparatus therefor
11/11/2004	US20040222968 Pressing direction sensor and input device using the same
11/11/2004	US20040222962 Active matrix type display device
11/11/2004	US20040222854 High-frequency power amplifier
11/11/2004	US20040222804 Electrical component and method of manufacturing the same
11/11/2004	US20040222499 Group lll nitride compound semiconductor device and method for forming an electrode
11/11/2004	US20040222498 Structure and method of forming a notched gate field effect transistor
11/11/2004	US20040222497 Method to fabricate high-performance npn transistors in a bicmos process
11/11/2004	US20040222496 Method for creation of a very narrow emitter feature and structure provided thereby
11/11/2004	US20040222495 Diffused extrinsic base and method for fabrication
11/11/2004	US20040222494 Electrical component structure
11/11/2004	US20040222491 Integrated fuse with regions of different doping within the fuse neck
11/11/2004	US20040222488 High voltage n-ldmos transistors having shallow trench isolation region
11/11/2004	US20040222487 Semiconductor device having a shielding layer
11/11/2004	US20040222486 BiCMOS TECHNOLOGY ON SOI SUBSTRATES
11/11/2004	US20040222485 Bladed silicon-on-insulator semiconductor devices and method of making
11/11/2004	US20040222483 MOS power device with high integration density and manufacturing process thereof
11/11/2004	US20040222481 Imager light shield
11/11/2004	US20040222477 Multi-height finfets
11/11/2004	US20040222476 Highly reliable amorphous high-k gate dielectric ZrOxNy
11/11/2004	US20040222475 JFET structure for integrated circuit and fabrication method
11/11/2004	US20040222474 Method for making a semiconductor device having a metal gate electrode
11/11/2004	US20040222473 Semiconductor device
11/11/2004	US20040222472 Thin film transistor and use of same
11/11/2004	US20040222471 Semiconductor device having a plurality of gate electrodes and manufacturing method thereof
11/11/2004	US20040222470 Semiconductor device and fabrication method thereof
11/11/2004	US20040222469 Semiconductor device
11/11/2004	US20040222466 Implanted asymmetric doped polysilicon gate FinFet
11/11/2004	US20040222465 Semiconductor device and method of manufacturing same

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