| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 12/30/2004 | US20040262679 Semiconductor storage device and semiconductor integrated circuit |
| 12/30/2004 | US20040262678 Semiconductor device and a method of manufacturing the same |
| 12/30/2004 | US20040262677 Vertical MOS transistor |
| 12/30/2004 | US20040262676 Methods of fabricating Fin-field effect transistors (Fin-FETs) having protection layers and devices related thereto |
| 12/30/2004 | US20040262675 Semiconductor device |
| 12/30/2004 | US20040262674 Semiconductor memory device with bit line of small resistance and manufacturing method thereof |
| 12/30/2004 | US20040262673 Read-only memory cell and fabrication method thereof |
| 12/30/2004 | US20040262672 [high-k tunneling dielectric for read only memory device and fabrication method thereof] |
| 12/30/2004 | US20040262671 Flash cell with trench source-line connection |
| 12/30/2004 | US20040262670 Semiconductor device including nonvolatile memory and method for fabricating the same |
| 12/30/2004 | US20040262668 Novel dual bit split gate flash memory |
| 12/30/2004 | US20040262667 Methods of forming memory devices and memory cell constructions |
| 12/30/2004 | US20040262666 Semiconductor storage device, mobile electronic apparatus, and method for controlling the semiconductor storage device |
| 12/30/2004 | US20040262665 Semiconductor storage device, method for operating thereof, semiconductor device and portable electronic equipment |
| 12/30/2004 | US20040262664 Non-volatile memory cell with dielectric spacers along sidewalls of a component stack, and method for forming same |
| 12/30/2004 | US20040262659 Semiconductor memory with trench capacitor and method of manufacturing the same |
| 12/30/2004 | US20040262657 Interconnect line selectively isolated from an underlying contact plug |
| 12/30/2004 | US20040262655 Ferroelectric random access memory capacitor and method for manufacturing the same |
| 12/30/2004 | US20040262650 Semiconductor device, method for producing the same, and information processing apparatus |
| 12/30/2004 | US20040262649 forming layers of nickel over silicon regions of substrate, then forming layer cobalt over the nickel layer to form a multilayer and annealing to silicide films, for integrated circuit and semiconductors; siliciding; chemical resistance |
| 12/30/2004 | US20040262647 Variable threshold voltage complementary MOSFET with SOI structure |
| 12/30/2004 | US20040262642 Semiconductor device and manufacturing method thereof |
| 12/30/2004 | US20040262634 Hetero-junction bipolar transistor and manufacturing method thereof |
| 12/30/2004 | US20040262633 Bidirectional photothyristor chip |
| 12/30/2004 | US20040262632 Split-channel high electron mobility transistor (hemt) device |
| 12/30/2004 | US20040262630 Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same |
| 12/30/2004 | US20040262629 Semiconductor component and method of manufacturing same |
| 12/30/2004 | US20040262628 Semiconductor device including band-engineered superlattice |
| 12/30/2004 | US20040262626 Pseudomorphic high electron mobility field effect transistor with high device linearity |
| 12/30/2004 | US20040262624 GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same |
| 12/30/2004 | US20040262621 Bonding pad for gallium nitride-based light-emitting devices |
| 12/30/2004 | US20040262611 [thin film tansistor array panel and fabricating method thereof] |
| 12/30/2004 | US20040262610 Liquid crystal display device having polycrystalline TFT and fabricating method thereof |
| 12/30/2004 | US20040262609 Reduced barrier photodiode/transfer gate device structure of high efficiency charge transfer and reduced lag and method of formation, and |
| 12/30/2004 | US20040262608 Design for thin film transistor to improve mobility |
| 12/30/2004 | US20040262607 Thin-film transistor in which fluctuations in current flowing therethrough are suppressed, and image display apparatus |
| 12/30/2004 | US20040262606 Semiconductor device and method for forming the same |
| 12/30/2004 | US20040262605 Active matrix organic electro luminescence device panel |
| 12/30/2004 | US20040262601 Organic field-effect transistor and method of manufacturing same |
| 12/30/2004 | US20040262598 Logic apparatus and logic circuit |
| 12/30/2004 | US20040262597 Semiconductor device including mosfet having band-engineered superlattice |
| 12/30/2004 | US20040262596 Semiconductor device including band-engineered superlattice |
| 12/30/2004 | US20040262595 Semiconductor device including band-engineered superlattice |
| 12/30/2004 | US20040262594 Semiconductor structures having improved conductivity effective mass and methods for fabricating same |
| 12/30/2004 | US20040262593 Heterojunction thyristor-based amplifier |
| 12/30/2004 | US20040262591 Diode/superionic conductor/polymer memory structure |
| 12/30/2004 | US20040262583 Quantum dots of group IV semiconductor materials |
| 12/30/2004 | US20040262497 Two-dimensional semiconductor detector and two-dimensional imaging device |
| 12/30/2004 | US20040262262 Process for patterning high-k dielectric material |
| 12/30/2004 | US20040262255 Placing a film in contact with a mold and applying a molding pressure suitable to change the orientation of the molecules constituting conjugated materials in regions of the film in contact with the mold |
| 12/30/2004 | US20040261695 Method for making semiconductor device including band-engineered superlattice |
| 12/30/2004 | DE10325150A1 Parametrierte Halbleiterverbundstruktur mit integrierten Dotierungskanälen, Verfahren zur Herstellung und Anwendung davon Parameterized semiconductor composite structure with built-doping channels, methods of preparation and use thereof |
| 12/30/2004 | DE10324611A1 Integrierter Halbleiterspeicher und Verfahren zur Reduzierung von Leckströmen in einem Halbleiterspeicher Integrated semiconductor memory and method of reducing leakage current in a semiconductor memory, |
| 12/30/2004 | DE10324554A1 Hochreine, ionenfreie halbleitende Polythiopene, Verfahren zu deren Herstellung und deren Verwendung zur Herstellung elektronischer Bauelemente Highly pure, ion-free semiconducting Polythiopene, to processes for their preparation and their use for the production of electronic components |
| 12/30/2004 | DE10324550A1 Herstellungsverfahren für eine NROM-Halbleiterspeichervorrichtung und entsprechende NROM-Halbleiterspeichervorrichtung Manufacturing method of a semiconductor memory NROM device and corresponding NROM semiconductor memory device |
| 12/30/2004 | DE10324065A1 Verfahren zur Herstellung eines integrierten Silizium-Germanium-Heterobipolartranistors und ein integrierter Silizium-Germanium Heterobipolartransitor A method for manufacturing an integrated silicon-germanium Heterobipolartranistors and an integrated silicon-germanium Heterobipolartransitor |
| 12/30/2004 | DE102004026210A1 Physical quantity detector e.g. for pressure of motor vehicle, has positioning unit formed near roll off which is provided at location where corner of sensor provided between inner walls of resin case opposes concave portion of case |
| 12/30/2004 | DE102004019199A1 Formation of semiconductor device, e.g. complementary metal oxide semiconductor transistor, involves forming silicide layers at silicidation temperature which is less than anneal temperature |
| 12/30/2004 | DE102004002015A1 Halbleitervorrichtung mit Scheinelektrode A semiconductor device having dummy electrode |
| 12/30/2004 | DE10142307B4 Verfahren zur Herstellung von Feldeffekttransistoren mit erhöhten Source/Drain-Gebieten Process for the preparation of field effect transistors with elevated source / drain regions |
| 12/29/2004 | WO2004114422A1 P-n heterojunction structure of zinc oxide-based nanorod and semiconductor thin film, preparation thereof, and nano-device comprising same |
| 12/29/2004 | WO2004114416A1 Semiconductor sensor |
| 12/29/2004 | WO2004114414A1 Field effect transistor |
| 12/29/2004 | WO2004114413A1 Semiconductor device and its manufacturing method |
| 12/29/2004 | WO2004114411A1 Lateral field-effect transistor having an insulated trench gate electrode |
| 12/29/2004 | WO2004114410A2 Trench mos structure |
| 12/29/2004 | WO2004114397A1 Electronic device, assembly and methods of manufacturing an electronic device |
| 12/29/2004 | WO2004114391A1 Semiconductor device, its manufacturing method, and electronic device |
| 12/29/2004 | WO2004114390A1 Semiconductor device and production method therefor |
| 12/29/2004 | WO2004114389A1 Nonvolatile memory device with a floating gate comprising semiconductor nanocrystals |
| 12/29/2004 | WO2004114384A1 Silicon epitaxial wafer manufacturing method and silicon epitaxial wafer |
| 12/29/2004 | WO2004071153A8 Method of forming sub-micron-size structures over a substrate |
| 12/29/2004 | EP1492172A1 Microelectronic components and electronic networks comprising DNA |
| 12/29/2004 | EP1492162A2 A method of forming a nickel silicide layer |
| 12/29/2004 | EP1492161A1 Method for forming underlying insulation film |
| 12/29/2004 | EP1492158A2 GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same |
| 12/29/2004 | EP1491854A1 Inclination sensor, method of manufacturing inclination sensor, and method of measuring inclination |
| 12/29/2004 | EP1490909A1 Active matrix electroluminescent display devices, and their manufacture |
| 12/29/2004 | EP1490901A1 Method for forming an improved metal silicide contact to a silicon-containing conductive region |
| 12/29/2004 | EP1490900A1 Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same |
| 12/29/2004 | EP1490896A1 Method of forming nanocrystals |
| 12/29/2004 | EP1490293A2 Micro-electromechanical systems |
| 12/29/2004 | EP1433182A4 Selective operation of a multi-state non-volatile memory system in a binary mode |
| 12/29/2004 | CN2667667Y Silicon capacitive pressure sensor |
| 12/29/2004 | CN1559080A Minimizing degradation of SIC bipolar semiconductor devices |
| 12/29/2004 | CN1558932A Organic semiconductor material and organic semiconductor element employing the same |
| 12/29/2004 | CN1558451A Light emitting diode element capable of preventing electrostatic damage |
| 12/29/2004 | CN1558447A Method of making thin film transistor |
| 12/29/2004 | CN1558446A Method and apparatus for improving the electrical resistance of conductive paths |
| 12/29/2004 | CN1558292A Method for fabricating thin film transistors |
| 12/29/2004 | CN1558286A Electro-optical apparatus |
| 12/29/2004 | CN1558285A Active type array liquid crystal display |
| 12/29/2004 | CN1558272A Active element array baseplate and liquid crystal display panel possessing said baseplate |
| 12/29/2004 | CN1558269A Interstitial material structure for liquid crystal display panel |
| 12/29/2004 | CN1558207A Self-addressable self-assembling microelectronic systems and devices for molecular biological analysis and diagnostics |
| 12/29/2004 | CN1182587C High temp resisting solid pressure resistance type plane film force sensitive chip and mfg method thereof |
| 12/29/2004 | CN1182586C Low-temperature polysilicon film transistor with slightly doped drain structure and its making process |
| 12/29/2004 | CN1182585C Field effect transistor adapted for extra-dup submicrometer field and preparation process thereof |
| 12/29/2004 | CN1182583C Integrated circuit with high gate coupling capacitance |
| 12/29/2004 | CN1182570C Method for manufacturing field effect transistor |