H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2004
11/18/2004	US20040227160 Semiconductor device
11/18/2004	US20040227158 SiGe strain relaxed buffer for high mobility devices and a method of fabricating it
11/18/2004	US20040227155 Semiconductor device
11/18/2004	US20040227154 High speed composite p-channel Si/SiGe heterostructure for field effect devices
11/18/2004	US20040227153 Semiconductor device and method for fabricating the same
11/18/2004	US20040227150 ZnO system semiconductor device
11/18/2004	US20040227137 [cmos transistor and cmos-based device]
11/18/2004	US20040227062 Light-receiving module having a light-receiving device on a die-capacitor
11/18/2004	US20040227061 Three-dimensional island pixel photo-sensor
11/18/2004	US20040226376 Capacitive dynamic quantity sensor device
11/18/2004	DE10317381A1 Vertical power transistor for minimizing switching loss in double-defused metal oxide semiconductor transistors has a body zone applied on a semiconductor with first/second-mode conductivity doping
11/18/2004	DE10316530A1 Production of a semiconductor component comprises preparing a semiconductor body with a dopant and with a trench protruding from a first surface into the semiconductor body, and further processing
11/18/2004	DE10311699A1 Laterally-diffused metal oxide semiconductor, high frequency transistor includes pocket zone of first conductivity type, introduced into semiconductor material
11/18/2004	DE10297535T5 Verfahren zur Herstellung eines Hochspannungs-MOS-Transistors durch Ionen-Implantation A method for producing a high voltage MOS transistor by ion implantation
11/18/2004	DE102004016700A1 Verfahren zur Bildung von Saliziden A method of forming Saliziden
11/17/2004	EP1478212A1 Organic electroluminescence display and its manufacturing method
11/17/2004	EP1478029A1 Mos transistor and method of fabricating the same
11/17/2004	EP1478016A2 Pattern and fabricating method therefor, device and fabricating method therefor, electro-optical apparatus, electronic apparatus, and method for fabricating active matrix substrate
11/17/2004	EP1478015A2 Discrete semiconductor device with flip-chip arrangement
11/17/2004	EP1478013A2 Split-gate metal-oxide-semiconductor device
11/17/2004	EP1476904A2 Integrated semiconductor circuit comprising a parallel connection of coupled capacitors
11/17/2004	EP1476901A1 Method of forming a vertical double gate semiconductor device and structure thereof
11/17/2004	EP1476900A2 Oxide layer on a gaas-based semiconductor structure and method of forming the same
11/17/2004	EP1476899A1 Method of forming layers of oxide of different thicknesses on a surface of a substrate
11/17/2004	EP1476895A2 High voltage power mosfet having low on-resistance
11/17/2004	EP1476894A2 High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon
11/17/2004	EP1476881A2 Doped organic semiconductor material and method for production thereof
11/17/2004	EP1116274B1 Electronic switching device with at least two semiconductor components
11/17/2004	EP1036085A4 Self-addressable self-assembling microelectronic integrated systems, component devices, mechanisms, methods, and procedures for molecular biological analysis and diagnostics
11/17/2004	CN2657149Y Electrooptical device and electronic equipment
11/17/2004	CN1547777A Field-effect transistor constituting channel by carbon nano tubes
11/17/2004	CN1547776A Vertical dual gate field effect transistor
11/17/2004	CN1547766A Silicide process using high K-dielectrics
11/17/2004	CN1547765A Trench dmos transistor with embedded trench schottky rectifier
11/17/2004	CN1547761A United method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
11/17/2004	CN1547680A An etchant for a wire, a method for manufacturing the wire and a method for manufacturing a thin film transistor array panel including the method
11/17/2004	CN1547626A A method to increase device-to-device uniformity for polycrystalline thin-film transistors by deliberately mis-aligning the microstructure relative to the channel region
11/17/2004	CN1547067A 画素结构及其制造方法 Pixel structure and its manufacturing method
11/17/2004	CN1176499C Single-electron transistor with nano metal oxide wire
11/17/2004	CN1176498C Aluminium nitride and aluminum oxide/nitride grid laminated FET and forming method thereof
11/17/2004	CN1176497C 半导体装置 Semiconductor device
11/16/2004	US6819845 Optical devices with engineered nonlinear nanocomposite materials
11/16/2004	US6819597 Row decoder in flash memory and erase method of flash memory cell using the same
11/16/2004	US6819594 Electrically erasable programmable logic device
11/16/2004	US6819592 Semiconductor memory
11/16/2004	US6819590 Semiconductor memory
11/16/2004	US6819389 Liquid crystal display device with a substrate having an opening on an organic film thereof to accommodate sealing material therethrough
11/16/2004	US6819383 Forming method of liquid crystal layer using ink jet system
11/16/2004	US6819145 High speed differential pre-driver using common mode pre-charge
11/16/2004	US6819119 Method for evaluating a crystalline semiconductor substrate
11/16/2004	US6819118 Sensing device
11/16/2004	US6819089 Power factor correction circuit with high-voltage semiconductor component
11/16/2004	US6818998 Stacked chip package having upper chip provided with trenches and method of manufacturing the same
11/16/2004	US6818996 Multi-level redistribution layer traces for reducing current crowding in flipchip solder bumps
11/16/2004	US6818967 Fabricating method of low temperature poly-silicon film and low temperature poly-silicon thin film transistor
11/16/2004	US6818964 Selectively-etched nanochannel electrophoretic and electrochemical devices
11/16/2004	US6818958 Semiconductor device and process for its manufacture to increase threshold voltage stability
11/16/2004	US6818956 Non-volatile memory device and fabrication method thereof
11/16/2004	US6818954 Lateral high breakdown voltage MOSFET and device provided therewith
11/16/2004	US6818952 Damascene gate multi-mesa MOSFET
11/16/2004	US6818951 Arrangement in a power mosfet
11/16/2004	US6818950 Increasing switching speed of geometric construction gate MOSFET structures
11/16/2004	US6818949 Semiconductor device and method for fabricating the same
11/16/2004	US6818948 Split gate flash memory device and method of fabricating the same
11/16/2004	US6818947 Buried gate-field termination structure
11/16/2004	US6818946 Trench MOSFET with increased channel density
11/16/2004	US6818945 Semiconductor device
11/16/2004	US6818944 Nonvolatile memory devices and methods of fabricating the same
11/16/2004	US6818943 Semiconductor device having a shield plate for applying electric potential to the semiconductor substrate
11/16/2004	US6818942 Non-volatile semiconductor storage device having conductive layer surrounding floating gate
11/16/2004	US6818940 Insulated gate bipolar transistor having trench gates of rectangular upper surfaces with different widths
11/16/2004	US6818939 Vertical compound semiconductor field effect transistor structure
11/16/2004	US6818938 MOS transistor and method of forming the transistor with a channel region in a layer of composite material
11/16/2004	US6818936 Scaled EEPROM cell by metal-insulator-metal (MIM) coupling
11/16/2004	US6818932 Semiconductor device with improved soft error resistance
11/16/2004	US6818931 Chip design with power rails under transistors
11/16/2004	US6818930 Gated isolation structure for imagers
11/16/2004	US6818927 Sensitive high bidirectional static switch
11/16/2004	US6818922 Thin film transistor array and driving circuit structure
11/16/2004	US6818921 SOI substrate, element substrate, semiconductor device, electro-optical apparatus and electronic equipment
11/16/2004	US6818920 Integrated circuit provided with a substrate and memory transponder
11/16/2004	US6818917 Voltage-switchable and-tunable and environment-insensitive multi-color superlattice infrared photodetector
11/16/2004	US6818914 Semiconductor element and process for manufacturing the same
11/16/2004	US6818898 X-ray image sensing device
11/16/2004	US6818558 Method of manufacturing a dielectric layer for a silicon-oxide-nitride-oxide-silicon (SONOS) type devices
11/16/2004	US6818554 Method for fabricating a semiconductor device having a metallic silicide layer
11/16/2004	US6818550 Method of cutting a wafer into individual chips
11/16/2004	US6818539 Semiconductor devices and methods of fabricating the same
11/16/2004	US6818536 Semiconductor device and method of manufacturing the same
11/16/2004	US6818535 Thin phosphorus nitride film as an n-type doping source used in a laser doping technology
11/16/2004	US6818534 DRAM having improved leakage performance and method for making same
11/16/2004	US6818525 Semiconductor device and method of providing regions of low substrate capacitance
11/16/2004	US6818521 Method of manufacturing a hetero-junction bipolar transistor with epitaxially grown multi-layer films and annealing at or below 600° C.
11/16/2004	US6818517 Methods of depositing two or more layers on a substrate in situ
11/16/2004	US6818513 Method of forming a field effect transistor having a lateral depletion structure
11/16/2004	US6818512 Split-gate flash with source/drain multi-sharing
11/16/2004	US6818511 Non-volatile memory device to protect floating gate from charge loss and method for fabricating the same
11/16/2004	US6818510 Non-volatile memory device and method for fabricating the same
11/16/2004	US6818507 Method of manufacturing semiconductor device including memory region and logic circuit region
11/16/2004	US6818506 Method of forming a gate electrode in a semiconductor device

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