H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2004
12/29/2004	CN1182565C Semiconductor film and method for manufacturing semiconductor device
12/28/2004	US6836444 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
12/28/2004	US6836399 Integrated circuit metal-insulator-metal capacitors formed of pairs of capacitors connected in antiparallel
12/28/2004	US6836351 Quantum-confined stark effect quantum-dot optical modulator
12/28/2004	US6836302 Active matrix substrate, electro-optical device and electronic equipment
12/28/2004	US6836299 TFT LCD device having multi-layered pixel electrodes
12/28/2004	US6836269 Precharge circuit and image display device using the same
12/28/2004	US6836172 Semiconductor switch apparatus including isolated MOS transistors
12/28/2004	US6836069 Organic EL display device
12/28/2004	US6836066 Triode field emission display using carbon nanobtubes
12/28/2004	US6836022 High voltage flip-chip component package and method for forming the same
12/28/2004	US6836001 Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench
12/28/2004	US6835993 Bidirectional shallow trench superjunction device with resurf region
12/28/2004	US6835987 Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures
12/28/2004	US6835983 Silicon-on-insulator (SOI) integrated circuit (IC) chip with the silicon layers consisting of regions of different thickness
12/28/2004	US6835982 Semiconductor devices
12/28/2004	US6835980 Semiconductor device with novel film composition
12/28/2004	US6835979 Nonvolatle memory
12/28/2004	US6835978 Nonvolatile semiconductor memory device having element isolating region of trench type
12/28/2004	US6835974 Three dimensional integrated circuits using sub-micron thin-film diodes
12/28/2004	US6835969 Split-channel high electron mobility transistor (HEMT) device
12/28/2004	US6835967 Semiconductor diodes with fin structure
12/28/2004	US6835955 Electro-optical device and electronic apparatus
12/28/2004	US6835954 Active matrix organic electroluminescent display device
12/28/2004	US6835949 Terahertz device integrated antenna for use in resonant and non-resonant modes and method
12/28/2004	US6835947 Emitter and method of making
12/28/2004	US6835675 Laser-irradiation method and laser-irradiation device
12/28/2004	US6835640 Method of forming a novel composite insulator spacer
12/28/2004	US6835638 Silicon carbide gate transistor and fabrication process
12/28/2004	US6835637 Multi-layered gate for a CMOS imager
12/28/2004	US6835636 Method for fabricating source/drain devices
12/28/2004	US6835635 Electrode forming method and field effect transistor
12/28/2004	US6835627 Method for forming a DMOS device and a DMOS device
12/28/2004	US6835625 Method for fabricating semiconductor device
12/28/2004	US6835624 Semiconductor device for protecting electrostatic discharge and method of fabricating the same
12/28/2004	US6835621 Method of fabricating non-volatile memory device having a structure of silicon-oxide-nitride-oxide-silicon
12/28/2004	US6835620 Method of manufacturing flash memory devices
12/28/2004	US6835619 Method of forming a memory transistor comprising a Schottky contact
12/28/2004	US6835618 Epitaxially grown fin for FinFET
12/28/2004	US6835614 Damascene double-gate MOSFET with vertical channel regions
12/28/2004	US6835612 Method for fabricating a MOSFET having a very small channel length
12/28/2004	US6835611 Structure of metal oxide semiconductor field effect transistor
12/28/2004	US6835610 Method of manufacturing semiconductor device having gate electrode with expanded upper portion
12/28/2004	US6835609 Method of forming double-gate semiconductor-on-insulator (SOI) transistors
12/28/2004	US6835608 Method for crystallizing amorphous film and method for fabricating LCD by using the same
12/28/2004	US6835607 Semiconductor device and a method for manufacturing the same
12/28/2004	US6835606 Low temperature polysilicon thin film transistor and method of forming polysilicon layer of same
12/28/2004	US6835588 Micro inertia sensor and method of manufacturing the same
12/28/2004	US6835586 Semiconductor device and manufacturing method thereof
12/28/2004	US6835575 Passivation layer for molecular electronic device fabrication
12/23/2004	WO2004112238A1 Low-noise amplifier
12/23/2004	WO2004112156A1 Gan-based semiconductor junction structure
12/23/2004	WO2004112150A1 Field effect transistor
12/23/2004	WO2004112149A1 Trench-gate semiconductor devices
12/23/2004	WO2004112148A1 Semiconductor element and process for fabricating the same
12/23/2004	WO2004112147A1 Gate-induced strain for mos performance improvement
12/23/2004	WO2004112146A1 Finfet with dual silicon gate layer for chemical mechanical polishing planarization
12/23/2004	WO2004112145A1 Semiconductor integrated circuit device having improved punch-through resistance and its manufacturing method, and semiconductor integrated circuit device including low-voltage transistor and high-voltage transistor
12/23/2004	WO2004112144A1 Dc amplifier and semiconductor integrated circuit thereof
12/23/2004	WO2004112142A1 Limiter circuit and semiconductor integrated circuit thereof
12/23/2004	WO2004112141A1 Frequency converting circuit of direct conversion reception, semiconductor integrated circuit thereof, and direct conversion receiver
12/23/2004	WO2004112140A1 Mixer circuit
12/23/2004	WO2004112138A1 Semiconductor device and method for manufacturing same
12/23/2004	WO2004112136A1 Electronic device
12/23/2004	WO2004112127A1 Soi shaped structure
12/23/2004	WO2004112121A1 Mis transistor and cmos transistor
12/23/2004	WO2004112111A1 Compound semiconductor, method for producing same and compound semiconductor device
12/23/2004	WO2004112110A1 Crystallized film and process for production thereof
12/23/2004	WO2004112105A2 Multi-step chemical mechanical polishing of a gate area in a finfet
12/23/2004	WO2004112104A2 Low temperature process for tft fabrication
12/23/2004	WO2004112101A2 Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof
12/23/2004	WO2004112096A2 Method and system for high volume transfer of dies to substrates
12/23/2004	WO2004112042A2 Non-volatile memory device
12/23/2004	WO2004111592A1 Multi-axis sensor
12/23/2004	WO2004097944A3 Silicon carbide mosfets with integrated antiparallel junction barrier schottky free wheeling diodes and methods of fabricating same
12/23/2004	WO2004095553A3 Method for producing a strained layer on a substrate and corresponding layer structure
12/23/2004	WO2004079744A3 Magnetic memory cell junction and method for forming a magnetic memory cell junction
12/23/2004	WO2004077573A3 Semiconductor diode, electronic component, voltage source inverter and control method
12/23/2004	WO2004073023A3 Low voltage nmos-based electrostatic discharge clamp
12/23/2004	WO2004066345A3 Doped semiconductor nanocrystal layers and preparation thereof
12/23/2004	WO2004051752A3 Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode
12/23/2004	WO2004025739A3 Method for producing an integrated pin diode and corresponding circuit
12/23/2004	US20040261044 Method for setting design margin for LSI
12/23/2004	US20040259453 Method for manufacturing light emitting device
12/23/2004	US20040259389 Method for manufacturing a semiconductor device
12/23/2004	US20040259387 Laser irradiation apparatus and method of fabricating semiconductor device
12/23/2004	US20040259386 Semiconductor device and method of manufacturing the same
12/23/2004	US20040259379 Low temperature nitridation of silicon
12/23/2004	US20040259369 Method of forming gate electrode in semiconductor device
12/23/2004	US20040259347 Method and an apparatus for a hard-coded bit value changeable in any layer of metal
12/23/2004	US20040259346 Semiconductor device having a ball grid array and a fabrication process thereof
12/23/2004	US20040259343 Composite spacer liner for improved transistor performance
12/23/2004	US20040259340 Transistor with notched gate
12/23/2004	US20040259339 Process for producing semiconductor integrated circuit device and semiconductor integrated circuit device
12/23/2004	US20040259337 Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element
12/23/2004	US20040259326 Manufacturing process for ultra slim electrooptic display device unit
12/23/2004	US20040259319 Semiconductor device and process for manufacturing the same
12/23/2004	US20040259318 Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
12/23/2004	US20040259315 Semiconductor substrate, semiconductor device, and method of manufacturing the same
12/23/2004	US20040259314 Method to reduce junction leakage current in strained silicon on silicon-germanium devices

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