H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2004
11/25/2004	US20040232969 Voltage supply interface circuit
11/25/2004	US20040232816 Cathode ray tube
11/25/2004	US20040232554 Semiconductor device with effective heat-radiation
11/25/2004	US20040232540 Electronic device and method of manufacturing the same, circuit board, and electronic instrument
11/25/2004	US20040232537 Method and structure for interfacing electronic devices
11/25/2004	US20040232525 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
11/25/2004	US20040232522 Semiconductor device, method of manufacturing semiconductor device, and method of evaluating manufacturing process of semiconductor device
11/25/2004	US20040232516 Semiconductor device and method for manufacturing the same
11/25/2004	US20040232515 Semiconductor device having two-layered charge storage electrode
11/25/2004	US20040232514 Semiconductor device having isolation region and method of manufacturing the same
11/25/2004	US20040232513 Silicon strain engineering accomplished via use of specific shallow trench isolation fill materials
11/25/2004	US20040232511 Semiconductor device and method of manufacturing the same
11/25/2004	US20040232510 HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness
11/25/2004	US20040232507 Sensor package
11/25/2004	US20040232505 High speed electron tunneling devices
11/25/2004	US20040232504 Stress control of semiconductor microstructures for thin film growth
11/25/2004	US20040232498 Semiconductor integrated circuit device and manufacture method therefore
11/25/2004	US20040232495 Thin-film transistor and method for manufacturing the same
11/25/2004	US20040232491 Semiconductor device and method for manufacturing the same
11/25/2004	US20040232489 Method for improving silicon-on-insulator (SOI) film uniformity on a semiconductor wafer
11/25/2004	US20040232487 Ultra-thin semiconductors bonded on glass substrates
11/25/2004	US20040232486 High-voltage lateral transistor with a multi-layered extended drain structure
11/25/2004	US20040232485 Semiconductor device
11/25/2004	US20040232484 Non-uniform power semiconductor and method for making
11/25/2004	US20040232483 Field effect transistor and application device thereof
11/25/2004	US20040232482 Trenched DMOS devices and methods and processes for making same
11/25/2004	US20040232481 Structure and method for forming a trench MOSFET having self-aligned features
11/25/2004	US20040232480 Semiconductor device and manufacturing method therefor
11/25/2004	US20040232479 Methods of forming vertical power devices having trench-based source electrodes with sidewall source contacts
11/25/2004	US20040232478 SONOS memory device having nano-sized trap elements
11/25/2004	US20040232477 Semiconductor memory device, semiconductor device and methods of manufacturing them, portable electronic equipment, and IC card
11/25/2004	US20040232476 EEPROM cell structures having non-uniform channel-dielectric thickness and methods of making the same
11/25/2004	US20040232475 Semiconductor memory
11/25/2004	US20040232474 Nonvolatile semiconductor memory device
11/25/2004	US20040232473 [flash memory cell, flash memory cell array and manufacturing method thereof]
11/25/2004	US20040232472 Nonvolatile semiconductor memory and method of manufacturing the same
11/25/2004	US20040232471 Semiconductor integrated circuit device and its manufacturing method
11/25/2004	US20040232470 Memory device having a P+ gate and thin bottom oxide and method of erasing same
11/25/2004	US20040232467 TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming system
11/25/2004	US20040232462 Semiconductor device manufacturing method and semiconductor device
11/25/2004	US20040232459 Semiconductor device and manufacturing method thereof
11/25/2004	US20040232458 Ferroelectric memory and method of fabricating the same
11/25/2004	US20040232456 Elevated photodiode in an image sensor
11/25/2004	US20040232450 Self-aligned trench MOS junction field-effect transistor for high-frequency applications
11/25/2004	US20040232444 Semiconductor device with dummy electrode
11/25/2004	US20040232443 Wire structure a thin film transistor substrate of using the wire structure and a method of manufacturing the same
11/25/2004	US20040232441 Heterojunction bipolar transistor
11/25/2004	US20040232440 Compound semiconductor substrates and method of fabrication
11/25/2004	US20040232438 Semiconductor device and method for fabricating the same
11/25/2004	US20040232432 Method of manufacturing an active matrix substrate and an image display device using the same
11/25/2004	US20040232430 Structure and method for fabricating semiconductor structures and devices for detecting an object
11/25/2004	US20040232427 P-type group II-VI semiconductor compounds
11/25/2004	US20040232426 Nanotube array and method for producing a nanotube array
11/25/2004	US20040232425 Electro-optical device and electronic equipment using the same
11/25/2004	US20040232424 Thin film transistor device and method of manufacturing the same
11/25/2004	US20040232423 Semiconductor integrated circuit and fabrication method thereof
11/25/2004	US20040232422 Wafer gettering using relaxed silicon germanium epitaxial proximity layers
11/25/2004	US20040232421 Liquid crystal display device and fabrication method thereof
11/25/2004	US20040232419 Semiconductor device and method of manufacturing the same
11/25/2004	US20040232418 Light emitting device and manufacturing method of the same
11/25/2004	US20040232417 Pinned photodiode for a CMOS image sensor and fabricating method thereof
11/25/2004	US20040232413 Semiconductor device and manufacturing method thereof
11/25/2004	US20040232412 Group II-VI semiconductor devices
11/25/2004	US20040232411 Field-effect organic transistor
11/25/2004	US20040232407 Power MOS device with improved gate charge performance
11/25/2004	US20040232406 Terahertz device integrated antenna for use in resonant and non-resonant modes and method
11/25/2004	US20040232404 Boron phosphide-based semiconductor device and production method thereof
11/25/2004	US20040232403 Tuned bandwidth photocathode for transmission negative electron affinity devices
11/25/2004	US20040232126 Laser annealing apparatus and method of fabricating thin film transistor
11/25/2004	US20040232107 Method for manufacturing microstructure
11/25/2004	US20040232104 Process for the fabrication of thin-film device and thin-film device
11/25/2004	US20040231990 Electrohydrodynamic microfluidic mixer using transverse electric field
11/25/2004	US20040231426 Pressure sensor apparatus
11/25/2004	US20040231422 Acceleration sensor and manufacturing method for the same
11/25/2004	US20040231421 Capacitance type physical quantity sensor
11/25/2004	DE19507143B4 Flüssigkeitsdichter Halbleiter-Drucksensor sowie Herstellungsverfahren hierfür Liquid tight semiconductor pressure sensor and manufacturing method thereof
11/25/2004	DE10319515A1 Trench IGBT has a trench provided with an insulating layer in its lower region
11/25/2004	DE10318604A1 Field effect transistor has first, second constriction regions connected in parallel with respect to source, drain electrodes, gate electrode arranged above first, second constriction channel regions
11/25/2004	DE10318422A1 Hochfrequenz-Bipolartransistor und Verfahren zur Herstellung desselben Of the same high-frequency bipolar transistor and method for producing
11/25/2004	DE10318284A1 Verfahren zur Herstellung einer verspannten Schicht auf einem Substrat und Schichtstruktur A method for producing a strained layer on a substrate and layered structure
11/25/2004	DE10314596B3 Metal oxide semiconductor-compensation transistor component has a semiconductor body with a rear side with deep macropores or trenches vertically aligned to source electrode structures on the front side and to the sink regions
11/25/2004	DE102004022455A1 Bipolartransistor mit isolierter Steuerelektrode Bipolar transistor with insulated gate electrode
11/25/2004	DE102004012815A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
11/25/2004	DE102004009626A1 Struktur eines mikroelektronischen Kondensators mit radialem Stromfluß Structure of a microelectronic capacitor with radial current flow
11/24/2004	EP1480304A1 Quantum nano-composite semiconductor laser and quantum nano-composite array
11/24/2004	EP1480275A2 SONOS memory device having nanocrystal layer
11/24/2004	EP1480274A2 Nonvolatile semiconductor memory device having gate stack including oha film and method of manufacturing the same
11/24/2004	EP1480266A2 Process of making integrated electronic circuit with stacked elements and corresponding integrated electronic circuit.
11/24/2004	EP1480257A1 Method of manufacturing an electronic integrated circuit having a capacitor
11/24/2004	EP1480072A2 High quality and ultra large screen liquid crystal display device and production method thereof
11/24/2004	EP1480070A2 LCD - TFT array with electrode cutouts for multi-domain pixels
11/24/2004	EP1479143A2 Long wavelength vcsel comprising a tunnel junction with carbon doped gaassb
11/24/2004	EP1479110A1 High frequency semiconductor device and method of manufacture
11/24/2004	EP1479105A1 Floating gate memory cell, floating gate memory arrangement, switching circuit arrangement, and method for producing a floating gate memory cell
11/24/2004	EP1479103A1 METHOD OF CREATING HIGH-QUALITY RELAXED SiGe-ON-INSULATOR FOR STRAINED Si CMOS APPLICATIONS
11/24/2004	EP1479102A1 METHOD OF FORMING DIFFERENT SILICIDE PORTIONS ON DIFFERENT SILICON−CONTAINING REGIONS IN A SEMICONDUCTOR DEVICE
11/24/2004	EP1479100A1 Method for fabricating a semiconductor device having different metal silicide portions
11/24/2004	EP1478970A1 Method for manufacturing flat panel display substrates
11/24/2004	CN1550045A Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate
11/24/2004	CN1550040A 非易失性半导体存储器 The nonvolatile semiconductor memory

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