H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2004
11/24/2004	CN1550038A Making contact with the emitter contact of a semiconductor
11/24/2004	CN1550030A Elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
11/24/2004	CN1549349A Low-temperature polysilicon thin film transistor
11/24/2004	CN1549348A Soi chip with mesa isolation and recess resistant regions
11/24/2004	CN1549347A Seft-aligned dual-bit NVM cell and method for forming the same
11/24/2004	CN1549344A Electrostatic discharge protection element and producing method thereof
11/24/2004	CN1549343A Electrostatic discharge protection element and electronic device with thick diaphragm polysilicon and producing method thereof
11/24/2004	CN1549317A Device having resin package and method of producing the same
11/24/2004	CN1549316A Process for fabricating semiconductor device
11/24/2004	CN1549035A Liquid crystal display device with homogeneous shared voltage and producing method thereof
11/24/2004	CN1549033A Storing capacitor structure for LCD board and OELD board
11/24/2004	CN1549032A Liquid crystal display device and method of manufacturing the same
11/24/2004	CN1549006A Reflective liquid crystal display with double-matrix electrode
11/24/2004	CN1549003A Welding pad structure and producing method thereof
11/24/2004	CN1177374C Thin film transistor substrate and its producing method
11/24/2004	CN1177373C Semiconductor device and mfg. method thereof
11/24/2004	CN1177372C Non-volatile storage unit and producing method thereof
11/24/2004	CN1177371C Liquid crystal display device
11/24/2004	CN1177370C Semiconductor device with multi-grid insulation layer and its producing method
11/24/2004	CN1177367C Surface adhered diode array and its manufacture
11/24/2004	CN1177358C Semiconductor device chip scale surface assembling and packaging, and mfg. method therefor
11/24/2004	CN1177357C Semiconductor field effect metal oxide transistor with minimum covered capacitance
11/24/2004	CN1177353C Method for forming self-aligning contact welding disc in metal inlay grid technology
11/23/2004	US6822926 Non-volatile semiconductor memory device
11/23/2004	US6822916 Read/write amplifier having vertical transistors for a DRAM memory
11/23/2004	US6822900 Non-volatile semiconductor memory device
11/23/2004	US6822873 Structure of electronic device providing decreased fatigue of wire
11/23/2004	US6822840 Method for protecting MOS components from antenna effect and the apparatus thereof
11/23/2004	US6822703 Polycrystalline silicon thin film transistor of liquid crystal display and manufacturing method thereof
11/23/2004	US6822702 Pixellated devices such as active matrix liquid crystal displays
11/23/2004	US6822314 Base for a NPN bipolar transistor
11/23/2004	US6822313 Diode
11/23/2004	US6822307 Semiconductor triode device having a compound-semiconductor channel layer
11/23/2004	US6822306 Solid-state imaging device and method for manufacturing same
11/23/2004	US6822303 Titanium boride gate electrode and interconnect
11/23/2004	US6822302 Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device
11/23/2004	US6822301 Maskless middle-of-line liner deposition
11/23/2004	US6822299 Boron-doped titanium nitride layer for high aspect ratio semiconductor devices
11/23/2004	US6822297 Additional n-type LDD/pocket implant for improving short-channel NMOS ESD robustness
11/23/2004	US6822294 High holding voltage LVTSCR
11/23/2004	US6822293 Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof
11/23/2004	US6822292 Lateral MOSFET structure of an integrated circuit having separated device regions
11/23/2004	US6822291 Optimized gate implants for reducing dopant effects during gate etching
11/23/2004	US6822290 Truncated power enhanced drift lateral DMOS device which includes a ground strap
11/23/2004	US6822288 Trench MOSFET device with polycrystalline silicon source contact structure
11/23/2004	US6822287 Array of integrated circuit units with strapping lines to prevent punch through
11/23/2004	US6822285 EEPROM with multi-member floating gate
11/23/2004	US6822284 ONO dielectric for memory cells
11/23/2004	US6822283 Low temperature MIM capacitor for mixed-signal/RF applications
11/23/2004	US6822281 Trench cell for a DRAM cell array
11/23/2004	US6822277 Semiconductor device and method for manufacturing the same
11/23/2004	US6822275 Transverse junction field effect transistor
11/23/2004	US6822274 Heterojunction semiconductor device having an intermediate layer for providing an improved junction
11/23/2004	US6822268 Two layer mirror for LCD-on-silicon products and method of fabrication thereof
11/23/2004	US6822264 Light emitting device
11/23/2004	US6822263 Thin film transistor formed on a transparent substrate
11/23/2004	US6822262 Semiconductor thin film and semiconductor device
11/23/2004	US6822261 Semiconductor device and method for forming the same
11/23/2004	US6822258 Self-organized nanometer interface structure and its applications in electronic and opto-electronic devices
11/23/2004	US6821888 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding
11/23/2004	US6821887 Method of forming a metal silicide gate in a standard MOS process sequence
11/23/2004	US6821885 Semiconductor device and method for manufacturing the same
11/23/2004	US6821874 Method for depositing tungsten silicide film and method for preparing gate electrode/wiring
11/23/2004	US6821873 Anneal sequence for high-κ film property optimization
11/23/2004	US6821870 Heterojunction bipolar transistor and method for fabricating the same
11/23/2004	US6821868 Method of forming nitrogen enriched gate dielectric with low effective oxide thickness
11/23/2004	US6821867 Method for forming grooves in the scribe region to prevent a warp of a semiconductor substrate
11/23/2004	US6821858 Semiconductor devices and methods for manufacturing the same
11/23/2004	US6821856 Method of manufacturing semiconductor device having source/drain regions included in a semiconductor layer formed over an isolation insulating film and a semiconductor device fabricated thereby
11/23/2004	US6821855 Reverse metal process for creating a metal silicide transistor gate structure
11/23/2004	US6821850 Method of manufacturing a multi-level flash EEPROM cell
11/23/2004	US6821849 Split gate flash memory cell and manufacturing method thereof
11/23/2004	US6821842 [DRAM structure and fabricating method thereof]
11/23/2004	US6821838 Method of forming an ultra thin dielectric film and a semiconductor device incorporating the same
11/23/2004	US6821837 Stack-film trench capacitor and method for manufacturing the same
11/23/2004	US6821835 Chemical vapor deposition of silicate high dielectric constant materials
11/23/2004	US6821834 Ion implantation methods and transistor cell layout for fin type transistors
11/23/2004	US6821832 Method of fabricating an X-ray detector array element
11/23/2004	US6821831 Electrostatic discharge protection in double diffused MOS transistors
11/23/2004	US6821830 Method for fabricating a semiconductor device including using a hard mask or a silylated photoresist for an angled tilted ion implant
11/23/2004	US6821829 Method of manufacturing a semiconductor component and semiconductor component thereof
11/23/2004	US6821827 Method of manufacturing a semiconductor device
11/23/2004	US6821826 Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers
11/23/2004	US6821825 Process for deposition of semiconductor films
11/23/2004	US6821824 Semiconductor device and method of manufacturing the same
11/23/2004	US6821808 CMOS APS with stacked avalanche multiplication layer which provides linear and logarithmic photo-conversion characteristics
11/23/2004	US6821803 Method of manufacturing an electroluminescence display device
11/23/2004	US6821800 Semiconductor light-emitting device and manufacturing method thereof
11/23/2004	US6821729 Electronic apparatus for monitoring electrical impulse from biological samples
11/23/2004	US6821713 Regulate and repeatably trim a nitride or polysilicon spacer
11/23/2004	US6821710 It is preferable to use tungsten, chromium, molybdenum, or titanium, which is superior in absorption of near infrared rays
11/23/2004	US6821348 Aperture mask patterns; elongated web of flexible film; integrated circuits
11/23/2004	US6821343 Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus
11/23/2004	US6820492 Pressure measuring apparatus
11/18/2004	WO2004100290A2 Multi-height finfets
11/18/2004	WO2004100272A1 Ultra-high current density thin-film si diode
11/18/2004	WO2004100239A1 Structure and method of forming a notched gate field effect transistor
11/18/2004	WO2004100225A2 A system and method for fabricating diodes
11/18/2004	WO2004100223A2 Semiconductor fabrication process with asymmetrical conductive spacers
11/18/2004	WO2004100217A2 Field effect chalcogenide devices

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