Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2004
12/22/2004EP1489653A2 Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element
12/22/2004EP1488524A2 Floating-gate analog circuit
12/22/2004EP1488469A2 Electronic device, method, monomer and polymer
12/22/2004EP1488466A2 A semiconductor photodetector
12/22/2004EP1488465A1 Semi-conductor structure comprising a switch element and an edge element
12/22/2004EP1488464A1 Method for producing an soi field effect transistor and corresponding field effect transistor
12/22/2004EP1488463A1 Biased, triple-well fully depleted soi structure, and various methods of making and operating same
12/22/2004EP1488462A2 Strained fin fets structure and method
12/22/2004EP1488461A1 Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same
12/22/2004EP1488460A1 Doped group iii-v nitride materials, and microelectronic devices and device precursor structures comprising same
12/22/2004EP1488456A1 Active matrix display devices, and their manufacture
12/22/2004EP1488455A1 Active matrix electroluminescent display devices, and their manufacture
12/22/2004EP1488454A2 Pixel current driver for organic light emitting diode displays
12/22/2004EP1488453A1 Ion implantation of silicon oxide liner to prevent dopant out-diffusion from source/drain extensions
12/22/2004EP1488452A2 A method for making nanoscale wires and gaps for switches and transistors
12/22/2004EP1488451A1 Methods for manufacturing compound semiconductor and compound insulator using chemical reaction and diffusion by heating, compound semiconductor and compound insulator manufactured using the method, and photocell, electronic circuit, transistor, and memory using the same
12/22/2004EP1488284A2 Photomask and method for photolithographic patterning of a substrate by use of phase shifted assist features
12/22/2004EP1488010A2 Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus
12/22/2004EP1487738A2 Silicon carbide microelectromechanical devices with electronic circuitry
12/22/2004CN2665749Y Photoelectric apparatus and electronic apparatus
12/22/2004CN1557024A Insulting gate A1GaN/GaN HEMT
12/22/2004CN1557023A Method for wrapped-gate MOSFET
12/22/2004CN1557022A Semiconductor device and method for fabricating the same
12/22/2004CN1557016A Electromechanical memory array using nanotube ribbons and method for making same
12/22/2004CN1556547A Longitudina multiface grid metal-oxide-semiconductor field effect transistor and its manufacturing method
12/22/2004CN1556437A Liquid crystal display possessing capacitance compensation structure
12/22/2004CN1556436A Testing device of plane display apparatus
12/22/2004CN1181562C Terminal of schottky diode controlled by junction barrier and method
12/22/2004CN1181561C Semiconductor device
12/22/2004CN1181560C Diode with high load-carrying ability
12/22/2004CN1181559C Semiconductor device
12/22/2004CN1181558C Ferroelectric transistor, its use in storage cell system and its method of production
12/22/2004CN1181557C 显示器件 Display Devices
12/22/2004CN1181556C Nno-volatile semiconductor memory device
12/22/2004CN1181555C Non-volatile semiconductor memory device
12/22/2004CN1181554C Semicoductor device and manufacturing method thereof
12/22/2004CN1181553C Nonvolatile semiconductor storage device
12/22/2004CN1181552C Semiconductor device and manufacturing method thereof
12/22/2004CN1181546C Integrated circuit with programmable memory element
12/22/2004CN1181534C Semiconductor device manufacture method
12/22/2004CN1181511C Voltage-variable capacitor with improved C-V linearity and its forming method
12/22/2004CN1181324C Capacitance type pressure sensor and method for manufacturing pressure sensor
12/21/2004USRE38674 Process for forming a thin oxide layer
12/21/2004US6833870 Charge transfer device and solid-state image pickup device
12/21/2004US6833726 SOI-LDMOS device with integral voltage sense electrodes
12/21/2004US6833612 Flip-chip image sensor packages
12/21/2004US6833601 Semiconductor imaging device having a refractive index matching layer
12/21/2004US6833599 Sensitivity enhancement of semiconductor magnetic sensor
12/21/2004US6833598 Spin valve transistor
12/21/2004US6833596 Semiconductor device and method of manufacturing the same
12/21/2004US6833595 Semiconductor device having an improved layout pattern of pair transistors
12/21/2004US6833594 Semiconductor integrated circuit device and manufacture method therefore
12/21/2004US6833593 Electrode means, a method for its manufacture, an apparatus comprising the electrode means as well as use of the latter
12/21/2004US6833592 Latch-up resistant CMOS structure
12/21/2004US6833591 Semiconductor device and method for fabricating the same
12/21/2004US6833589 Method for manufacturing field effect transistor
12/21/2004US6833588 Semiconductor device having a U-shaped gate structure
12/21/2004US6833586 LDMOS transistor with high voltage source and drain terminals
12/21/2004US6833585 High voltage lateral DMOS transistor having low on-resistance and high breakdown voltage
12/21/2004US6833584 Trench power semiconductor
12/21/2004US6833583 Edge termination in a trench-gate MOSFET
12/21/2004US6833582 Nonvolatile semiconductor memory device
12/21/2004US6833580 Self-aligned dual-bit NVM cell and method for forming the same
12/21/2004US6833577 Semiconductor device
12/21/2004US6833571 Transistor device including buried source
12/21/2004US6833569 Self-aligned planar double-gate process by amorphization
12/21/2004US6833568 Geometry-controllable design blocks of MOS transistors for improved ESD protection
12/21/2004US6833567 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
12/21/2004US6833562 Silicon carbide semiconductor device and its manufacturing method
12/21/2004US6833561 Storage capacitor structure for LCD and OELD panels
12/21/2004US6833559 Non-volatile resistance variable device
12/21/2004US6833556 Insulated gate field effect transistor having passivated schottky barriers to the channel
12/21/2004US6833327 Method of fabraicating semiconductor device
12/21/2004US6833313 Method of manufacturing semiconductor device by implanting rare gas ions
12/21/2004US6833307 Method for manufacturing a semiconductor component having an early halo implant
12/21/2004US6833306 Deuterium treatment of semiconductor device
12/21/2004US6833305 Vertical DRAM punchthrough stop self-aligned to storage trench
12/21/2004US6833304 Semiconductor device and manufacturing method thereof
12/21/2004US6833301 Semiconductor device with an improved gate electrode pattern and a method of manufacturing the same
12/21/2004US6833300 Method of forming integrated circuit contacts
12/21/2004US6833299 Method of fabricating a stacked poly-poly and MOS capacitor using a sige integration scheme
12/21/2004US6833298 Method for fabricating a semiconductor component having at least one transistor cell and an edge cell
12/21/2004US6833297 Method for reducing drain induced barrier lowering in a memory device
12/21/2004US6833296 Method of making a MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions
12/21/2004US6833295 Method of manufacturing a semiconductor device
12/21/2004US6833294 Method for making semiconductor device including band-engineered superlattice
12/21/2004US6833293 Semiconductor device and method for manufacturing the same
12/21/2004US6833292 Reducing dopant losses during annealing processes
12/21/2004US6833286 Semiconductor device with variable pin locations
12/21/2004US6833059 Field-effect transistor
12/16/2004WO2004109815A1 Contacts fabric using heterostructure of metal/semiconductor nanorods and fabrication method thereof
12/16/2004WO2004109810A1 Prevention of parasitic channel in an integrated soi process
12/16/2004WO2004109809A1 Silicon-on-insulator device
12/16/2004WO2004109808A1 Semiconductor device and its manufacturing method
12/16/2004WO2004109807A2 Semiconductor structure comprising integrated doping channels
12/16/2004WO2004109794A2 Coiled circuit device and method of making the same
12/16/2004WO2004109789A1 Field effect transistor having a lateral depletion structure
12/16/2004WO2004109784A1 Ion doping system, ion doping method and semiconductor device
12/16/2004WO2004109783A1 Process for fabricating semiconductor device
12/16/2004WO2004109782A1 Nitride semiconductor device and method for manufacturing same