Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2004
12/30/2004US20040266207 Patterning of devices
12/30/2004US20040266199 Method of manufacturing flash memory device
12/30/2004US20040266194 Method for manufacturing a semiconductor device
12/30/2004US20040266182 Nickel alloy salicide transistor structure and method for manufacturing same
12/30/2004US20040266177 Semiconductor device and method of manufacturing the same
12/30/2004US20040266176 Semiconductor device and method of manufacturing the same
12/30/2004US20040266168 Semiconductor device comprising low dielectric material film and its production method
12/30/2004US20040266165 Method of producing thin-film device, electro-optical device, and electronic apparatus
12/30/2004US20040266158 Plasma spraying for joining silicon parts
12/30/2004US20040266156 Method for fabricating semiconductor device with improved refresh time
12/30/2004US20040266153 Methods of forming metal silicide
12/30/2004US20040266152 Method for producing a gate structure for an MOS transistor
12/30/2004US20040266151 Method for fabricating gate-electrode of semiconductor device with use of hard mask
12/30/2004US20040266150 Method of manufacturing a field effect transistor and a liquid crystal display using the same
12/30/2004US20040266149 Method of manufacturing semiconductor device
12/30/2004US20040266148 Method for producing quantum dot silicate thin film for light emitting device
12/30/2004US20040266147 Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device
12/30/2004US20040266145 Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby
12/30/2004US20040266141 Suppression of chemical reactivity on semiconductor surfaces
12/30/2004US20040266137 Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance
12/30/2004US20040266136 Method for fabricating semiconductor device having trench type device isolation layer
12/30/2004US20040266135 Method for forming floating gate in flash memory device
12/30/2004US20040266132 Method of forming device isolation film in semiconductor device
12/30/2004US20040266122 Method for manufacturing a semiconductor device having an improved disposable spacer
12/30/2004US20040266121 Novel process method of source drain spacer engineering to improve transistor capacitance
12/30/2004US20040266120 Method of fabricating a robust gate dielectric using a replacement gate flow
12/30/2004US20040266119 Semiconductor constructions comprising metal silicide
12/30/2004US20040266117 Method of manufacturing high-k gate dielectric by use of annealing in high-pressure hydrogen atmosphere
12/30/2004US20040266116 Methods of fabricating semiconductor structures having improved conductivity effective mass
12/30/2004US20040266115 Method of making a gate electrode on a semiconductor device
12/30/2004US20040266113 Post high voltage gate oxide pattern high-vacuum outgas surface treatment
12/30/2004US20040266112 Method of fabricating a vertical quadruple conduction channel insulated gate transistor, and integrated circuit including this kind of transistor
12/30/2004US20040266111 Method for manufacturing flash memory device
12/30/2004US20040266110 Method of forming tunnel oxide film in semiconductor device
12/30/2004US20040266109 Semiconductor storage elements, semiconductor device manufacturing methods therefor, portable electronic equipment and IC card
12/30/2004US20040266108 Multi-bit stacked-type non-volatile memory and manufacture method thereof
12/30/2004US20040266107 Non-volatile memory having a reference transistor and method for forming
12/30/2004US20040266106 Method for forming bit line of flash device
12/30/2004US20040266091 Method for manufacturing semiconductor device and the device thereof
12/30/2004US20040266090 Semiconductor device and method for manufacturing semiconductor device
12/30/2004US20040266083 Nonplanar device with stress incorporation layer and method of fabrication
12/30/2004US20040266082 Method of fabricating bottom-gated polycrystalline silicon thin film transistor
12/30/2004US20040266080 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
12/30/2004US20040266078 Method of fabricating polycrystalline silicon thin film for improving crystallization characteristics and method of fabricating liquid crystal display device using the same
12/30/2004US20040266077 Structure and method for forming the gate electrode in a multiple-gate transistor
12/30/2004US20040266076 HYBRID PLANAR AND FinFET CMOS DEVICES
12/30/2004US20040266075 Method for fabricating a low temperature polysilicon thin film transistor
12/30/2004US20040266073 Method of manufacturing semiconductor device and display device
12/30/2004US20040266062 Underfill integration for optical packages
12/30/2004US20040266057 Silicon carbide and method of manufacturing the same
12/30/2004US20040266047 Thin film array panel and manufacturing method thereof
12/30/2004US20040266046 Method for making semiconductor device including band-engineered superlattice
12/30/2004US20040266045 Method for making semiconductor device including band-engineered superlattice
12/30/2004US20040266042 Electro-optical device and manufacturing method thereof
12/30/2004US20040266040 In-plane switching mode liquid crystal display device and method for fabricating the same
12/30/2004US20040266039 Method of exposing layer with light and method of manufacturing thin film transistor substrate for liquid crytal display device using the same
12/30/2004US20040265907 Juxtaposing affinity moieties to a semiconductor to effect changes in the charge pair separation characteristics when the affinity molecules are bound to the target; detecting target moieties in situ using nanocrystalline semiconductors; genome sequencing, forensics, assays, and drug screening
12/30/2004US20040265506 Process of surface treatment, surface treating device, surface treated plate, and electro-optic device, and electronic equipment
12/30/2004US20040264878 Method of enlarging a travel of piezoelectric sensor and MEMS switch employing the same
12/30/2004US20040264270 Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card
12/30/2004US20040264257 Semiconductor storage device, mobile electronic apparatus, method for controlling erase operation, and method for controlling program operation
12/30/2004US20040264252 Semiconductor memory device and portable electronic apparatus
12/30/2004US20040264246 Nonvolatile semiconductor memory
12/30/2004US20040264236 Nonvolatile semiconductor memory device having a gate stack and method of manufacturing the same
12/30/2004US20040264227 Semicondutor integrated circuit and electronic system
12/30/2004US20040264104 Gapped-plate capacitor
12/30/2004US20040264102 Dual-sided capacitor and method of formation
12/30/2004US20040263746 Array substrate for LCD device having double-layered metal structure and manufacturing method thereof
12/30/2004US20040263739 Progressive aligned deposition
12/30/2004US20040263728 Liquid crystal display panel and method for manufacturing light reflecting film thereof
12/30/2004US20040263724 Thin film transistor array panel and method for repairing liquid crystal display including the same
12/30/2004US20040263709 Method of manufacturing thin film transistor array panel and liquid crystal display
12/30/2004US20040263705 Liquid crystal display device having polycrystalline silicon thin film transistor and method of fabricating the same
12/30/2004US20040263704 Polycrystalline liquid crystal display device and method of fabricating the same
12/30/2004US20040263455 Display device and method of manufacturing the same
12/30/2004US20040263269 MOS-type variable capacitance element and voltage control oscillation circuit
12/30/2004US20040263058 Display panel, electrode panel and electrode substrate thereof
12/30/2004US20040262770 Semiconductor capacitive element, method for manufacturing same and semiconductor device provided with same
12/30/2004US20040262762 Method of providing via in a multilayer semiconductor device
12/30/2004US20040262715 Semiconductor device and manufacturing method for the same
12/30/2004US20040262714 Semiconductor device and method of manufacturing the same
12/30/2004US20040262713 High fT and fmax Bipolar Transistor and Method of Making Same
12/30/2004US20040262707 Semiconductor device and method of manufacturing the same
12/30/2004US20040262702 Low-density, high-resistivity titanium nitride layer for use as a contact for low-leakage dielectric layers
12/30/2004US20040262700 Lanthanide oxide / hafnium oxide dielectrics
12/30/2004US20040262699 N-gate transistor
12/30/2004US20040262698 High-density finfet integration scheme
12/30/2004US20040262695 Selective silicon-on-insulator isolation structure and method
12/30/2004US20040262694 Transistor device containing carbon doped silicon in a recess next to MDD to create strain in channel
12/30/2004US20040262693 Semiconductor storage device and semiconductor integrated circuit
12/30/2004US20040262692 Nonplanar device with stress incorporation layer and method of fabrication
12/30/2004US20040262691 Semiconductor structure having a compensated resistance in the LDD area and method for producing the same
12/30/2004US20040262690 High-density MOS transistor
12/30/2004US20040262688 METHOD OF MAKING A finFET HAVING SUPPRESSED PARASITIC DEVICE CHARACTERISTICS
12/30/2004US20040262687 Fin field effect transistors and fabrication methods thereof
12/30/2004US20040262685 Thin film lateral soi power device
12/30/2004US20040262684 Junction electronic component and an integrated power device incorporating said component
12/30/2004US20040262683 PMOS transistor strain optimization with raised junction regions
12/30/2004US20040262681 Semiconductor device
12/30/2004US20040262680 Dmos transistor