Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2005
08/03/2005CN1649092A Process for producing heavy blended semiconductor wafer, and no dislocation, heavy blended semiconductor wafer
08/03/2005CN1649089A Manufacturing method of semiconductor film and image display device
08/03/2005CN1649084A Process for producing a movable structure and etchant for silicon oxide film
08/03/2005CN1649083A Crystallization apparatus and method, manufacturing method of electronic device, electronic device, and optical modulation element
08/03/2005CN1649082A Apparatus for manufacturing flat panel display devices
08/03/2005CN1649033A Shift register and MOS-type solid-state image sensor
08/03/2005CN1648919A Value information management system and method therefor
08/03/2005CN1648757A Active matrix substrate and display device
08/03/2005CN1648756A Active matrix substrate and display device
08/03/2005CN1648754A Conductive convex block and display panel
08/03/2005CN1648751A Liquid crystal display device and a manufacturing method of the same
08/03/2005CN1648750A Liquid crystal display device and its producing method
08/03/2005CN1648749A Liquid crystal display and fabricating method of the same
08/03/2005CN1648747A Method of manufacturing substrate for display and method of manufacturing display utilizing the same
08/03/2005CN1648746A Thin film transistor with super micro type reflective layer pixel design and liquid crystal display
08/03/2005CN1648731A Liquid crystal display panel and its producing method
08/03/2005CN1648730A Method for clearing image residue and its liquid crystal display
08/03/2005CN1648722A Wide-angle supermicro penetration reflective vertical directional liquid crystal display
08/03/2005CN1213486C Bipolar heterojunction transistor and semiconductor IC device of the transistors
08/03/2005CN1213485C Layered dielectric on silicon carbide semiconductor structures
08/03/2005CN1213481C Blinking memory, method of writing and deleting thereof and manufacturing method thereof
08/03/2005CN1213474C Method for manufacturing semiconductor integrated circuit device
08/03/2005CN1213473C Method for manufacturing semiconductor
08/03/2005CN1213467C Compound semiconductor switch circuit apparatus
08/03/2005CN1213466C Threshold valtage regulating method for ultrathin epitaxial silicon metal oxide semiconductor transistor based on insulator
08/03/2005CN1213465C Method for making polycrystalline semiconductor layer and laser annealing device
08/03/2005CN1213390C Electro-optical devie and its manufacturing method and electronic device
08/03/2005CN1213338C Image display unit with transistor possessing polycrystal semiconductor layer
08/02/2005US6925009 Semiconductor memory
08/02/2005US6925007 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
08/02/2005US6925006 Semiconductor device
08/02/2005US6924874 Method of forming a liquid crystal display
08/02/2005US6924865 Liquid crystal display device with connecting member of counter electrodes
08/02/2005US6924863 In-plane switching mode active matrix type liquid crystal display device and method of fabricating the same
08/02/2005US6924853 Liquid crystal display with electrostatic protection
08/02/2005US6924561 SRAM formation using shadow implantation
08/02/2005US6924560 Compact SRAM cell with FinFET
08/02/2005US6924552 Multilayered integrated circuit with extraneous conductive traces
08/02/2005US6924546 Low-capacity vertical diode
08/02/2005US6924544 Semiconductor device and manufacturing method of the same
08/02/2005US6924541 Semiconductor photodetection device
08/02/2005US6924539 Magnetic memory cell having an annular data layer and a soft reference layer
08/02/2005US6924537 Semiconductor device including a potential drawing portion formed at a corner
08/02/2005US6924536 Semiconductor device and its manufacturing method
08/02/2005US6924534 Semiconductor device having MOS transistors and bipolar transistors on a single semiconductor substrate
08/02/2005US6924533 Semiconductor integrated circuit device incorporating overvoltage protection circuit
08/02/2005US6924532 Field-effect power transistor
08/02/2005US6924531 LDMOS device with isolation guard rings
08/02/2005US6924530 Double diffused MOS transistor and method for manufacturing same
08/02/2005US6924529 MOS transistor having a recessed gate electrode and fabrication method thereof
08/02/2005US6924527 Split gate flash memory cell structure and method of manufacturing the same
08/02/2005US6924518 Semiconductor device and method of manufacturing the same
08/02/2005US6924517 Thin channel FET with recessed source/drains and extensions
08/02/2005US6924516 Semiconductor device
08/02/2005US6924514 Light-emitting device and process for producing thereof
08/02/2005US6924509 Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer
08/02/2005US6924508 Organic electroluminescence panel
08/02/2005US6924503 Organic integrated device for thin film transistor and light emitting diode and process for fabricating the same
08/02/2005US6924501 Quantum logic gate and quantum logic operation method using exciton
08/02/2005US6924241 Method of making a silicon nitride film that is transmissive to ultraviolet light
08/02/2005US6924240 Low dielectric constant material, insulating film comprising the low dielectric constant material, and semiconductor device
08/02/2005US6924237 Method for manufacturing semiconductor integrated circuit device
08/02/2005US6924230 Method for forming a conductive layer
08/02/2005US6924206 Method of manufacturing a semiconductor capacitive element in a semiconductor device
08/02/2005US6924205 Collar formation using selective SiGe/Si etch
08/02/2005US6924203 Double HBT base metal micro-bridge
08/02/2005US6924202 Heterojunction bipolar transistor with self-aligned emitter and sidewall base contact
08/02/2005US6924201 Heterojunction bipolar transistor and method of producing the same
08/02/2005US6924198 Self-aligned trench transistor using etched contact
08/02/2005US6924197 Method of fabricating an integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source
08/02/2005US6924192 Semiconductor device manufacturing method and semiconductor device
08/02/2005US6924186 Method of forming a memory device and semiconductor device
08/02/2005US6924183 Manufacturing method for SOI semiconductor device, and SOI semiconductor device
08/02/2005US6924181 Strained silicon layer semiconductor product employing strained insulator layer
08/02/2005US6924180 Method of forming a pocket implant region after formation of composite insulator spacers
08/02/2005US6924179 Array substrate for a liquid crystal display and method for fabricating thereof
08/02/2005US6924178 Oxide/nitride stacked in FinFET spacer process
08/02/2005US6924177 Method for producing a thyristor
08/02/2005US6924161 Protective side wall passivation for VCSEL chips
08/02/2005US6923062 Sensor
08/02/2005US6923061 Physical quantity sensor having beam
07/2005
07/28/2005WO2005069383A1 Field effect transistor and display using same
07/28/2005WO2005069382A1 Transistor with workfunction-induced charge layer
07/28/2005WO2005069381A1 Semiconductor device module structure
07/28/2005WO2005069380A1 Integrated transistor, particularly for voltages of more than 40 volts and method for the production thereof
07/28/2005WO2005069379A2 Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
07/28/2005WO2005069378A2 Power semiconductor device and method therefor
07/28/2005WO2005069375A1 Electronic package of photo-image sensors in cellular phone camera modules, and the fabrication and assembly thereof
07/28/2005WO2005069373A1 Discriminative soi with oxide holes underneath dc source/drain
07/28/2005WO2005069204A1 Semiconductor device
07/28/2005WO2005067683A2 Inorganic nanowires
07/28/2005WO2005067677A2 High performance strained silicon finfets device and method for forming same
07/28/2005WO2005067472A2 Synthetic antiferromagnet structures for use in mtjs in mram technology
07/28/2005WO2004107410A3 Self-aligned bipolar transistor having recessed spacers and method for fabricating same
07/28/2005WO2004095540A3 Method of making a nanogap for variable capacitive elements and device having a nanogap
07/28/2005WO2004047113A3 Magnetic memory element and memory device including same
07/28/2005US20050166292 Free-standing electrostatically-doped carbon nanotube device and method for making same
07/28/2005US20050165503 Value information management system and method therefor
07/28/2005US20050164523 Substrate treating method
07/28/2005US20050164520 Method for manufacturing semiconductor device
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