Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2005
08/04/2005US20050167660 Capacitor with a dielectric including a self-organized monolayer of an organic compound
08/04/2005US20050167658 Non-unitary probabilistic quantum computing circuit and method
08/04/2005US20050167656 Phase-change memory cell and method of fabricating the phase-change memory cell
08/04/2005US20050167654 Ion recoil implantation and enhanced carrier mobility in CMOS device
08/04/2005US20050167653 Semiconductor device including a superlattice with regions defining a semiconductor junction
08/04/2005US20050167652 Gate-induced strain for MOS performance improvement
08/04/2005US20050167651 Controlled alignment catalytically grown nanostructures
08/04/2005US20050167650 Transistor having multiple channels
08/04/2005US20050167649 Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
08/04/2005US20050167646 Nanosubstrate with conductive zone and method for its selective preparation
08/04/2005US20050167645 Phase change memory devices including memory elements having variable cross-sectional areas
08/04/2005US20050167634 comprising a solution of hydrofluoric acid and hydrogen peroxide, used to remove residues
08/04/2005US20050167001 Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers
08/04/2005US20050166834 Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
08/04/2005DE19961487B4 Schaltungsanordnung zur Bildung eines MOS-Kondensators mit geringer Spannungsabhängigkeit und geringem Flächenbedarf A circuit arrangement for forming a MOS capacitor with a low voltage dependency and a small area requirement
08/04/2005DE10361715A1 Production of transition region between a trench (3) and a semiconductor useful in semiconductor and transistor technology
08/04/2005DE10361714A1 Structural semiconductor element with entry/exit regions (S) and a control region useful for transistors with local excess temperature protection
08/04/2005DE10361697A1 Preparation of trench structures with oxidation layers including cladding of trench inner region formed in semiconductor region, deposition of a further layer and oxidation
08/04/2005DE10361635A1 Technik zur Herstellung eines Abstandselements für ein Leitungselement durch Anwenden einer Ätzstoppschicht, die durch eine stark richtungsgebundene Abscheidetechnik aufgebracht wird Technique for producing a spacer for a line element by applying an etch stop layer is applied by a highly directional deposition
08/04/2005DE10254663B4 Transistor mit niederohmigem Basisanschluß und Verfahren zum Herstellen With low-impedance transistor base terminal and method for producing
08/04/2005DE10210272B4 Verfahren zur Herstellung eines Halbleiterbauelements mit wenigstens einer Transistorzelle und einer Randzelle A process for producing a semiconductor device having at least one transistor cell and a peripheral cell
08/04/2005DE102005001904A1 Halbleiterspeicher, Halbleiterbauteil und Verfahren zu deren Herstellung A semiconductor memory, semiconductor device and process for their preparation
08/04/2005DE102005001134A1 Knotenpunkt-Kontaktstrukturen in Halbleitervorrichtungen und Verfahren zur Herstellung derselben Node contact structures in semiconductor devices and methods of manufacturing the same
08/04/2005DE102005000997A1 Integrierte Halbleiterschaltungen mit gestapelten Knotenkontaktstrukturen und Verfahren zum Herstellen solcher Vorrichtungen Integrated semiconductor circuits stacked with node contact structures and methods for making such devices
08/04/2005DE102004063589A1 Semiconductor device comprises semiconductor substrate, gate on semiconductor substrate, epitaxial layer on semiconductor substrate, spacer on sidewall of gate, source/drain regions, and low doping concentration region
08/04/2005DE102004063583A1 Non-volatile memory device e.g. ROM, has gate oxide layer positioned on semiconductor substrate and block oxide layers disposed in bottom of lateral faces of polysilicon gate, and word lines vertically placed on substrate
08/04/2005DE102004063529A1 Transflektiv-Flüssigkristallanzeigevorrichtung und Herstellungsverfahren derselben Transflective liquid crystal display device and production method thereof
08/04/2005DE102004063144A1 Semiconductor device e.g. transistor has substrate with lightly doped regions, heavily doped regions and diffusion source/drain areas surrounding lightly doped regions
08/04/2005DE102004063143A1 Dummy-Schicht bei einem Halbleiter-Bauelement und Herstellungsverfahren dafür Dummy layer in a semiconductor device and manufacturing method thereof
08/04/2005DE102004063142A1 Verfahren für die Herstellung von Halbleiter-Bauelementen A process for the production of semiconductor devices
08/04/2005DE102004062392A1 Verfahren zum Bilden einer Metallverdrahtung einer Halbleitervorrichtung A method of forming a metal wiring of a semiconductor device
08/04/2005DE102004062214A1 Halbleitervorrichtung mit Temperaturerfassungsfunktion A semiconductor device comprising temperature detection function
08/04/2005DE102004061596A1 Lasermaske und Kristallationsverfahren unter Verwendung derselben Laser mask and Kristallationsverfahren using the same
08/04/2005DE102004056022A1 Verfahren zur Bildung eines Nickelsalicids und Verfahren zur Herstellung eines Halbleiterbauelements unter Verwendung desselben Of the same method for forming a Nickelsalicids and method for producing a semiconductor device using
08/04/2005DE102004047002A1 Vertikale DMOS- Transistor- Vorrichtung, integrierter Schaltkreis und Verfahren zur Herstellung dieser Vertical DMOS transistor device, integrated circuit and methods for producing these
08/04/2005DE102004031440A1 Kompensationsfilm, Herstellverfahren für einen solchen sowie LCD unter Verwendung eines solchen Compensation film, production method for such an LCD and using such
08/04/2005DE102004002165A1 Sensor module especially a pressure sensor has chip on metal lead frame with stress sensitive measuring structure and holes in housing to chip and lead frame
08/04/2005DE102004001713A1 Production process for an eprom memory cell with memory capacitor and transistor forms common polysilicon capacitor cover and gate electrodes and uses sink diffusion
08/04/2005DE102004001340A1 Verfahren zum Herstellen eines Nanoelement-Feldeffektransistors, Nanoelement-Feldeffekttransistor und Nanoelement-Anordnung A method for producing a nano-element field effect transistor, nano-element field effect transistor and nano-element arrangement
08/04/2005DE102004001239A1 Production process for a self adjusting epitaxial emitter for a bipolar transistor forms emitter layer over base then covers with doped polysilicon and anneals
08/04/2005DE10100695B4 Halbleitervorrichtung Semiconductor device
08/04/2005DE10000624B4 Verfahren zur Herstellung von MOS-Transistoren A process for producing MOS-transistors
08/03/2005EP1560269A1 MOS capacitor in an integrated semiconductor circuit
08/03/2005EP1560265A2 Semiconductor device and method for manufacturing the same
08/03/2005EP1560260A1 T-gate formation
08/03/2005EP1560029A1 Semiconductor acceleration sensor and process for manufacturing the same
08/03/2005EP1559187A1 Dc/dc converter using bipolar transistor, method of manufacturing the same and dc power supply module using the same
08/03/2005EP1559144A2 Semiconductor component and method of manufacture
08/03/2005EP1559143A2 Semiconductor component comprising a resurf transistor and method of manufacturing same
08/03/2005EP1559142A1 Thin film transistors and methods of manufacture thereof
08/03/2005EP1559141A1 One transistor dram cell structure and method for forming
08/03/2005EP1559137A1 Planarizing gate material to improve gate critical dimension in semiconductor devices
08/03/2005EP1559134A2 Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operation
08/03/2005EP1535396A4 System for digitizing transient signals
08/03/2005EP1392895B1 Semi-insulating silicon carbide without vanadium domination
08/03/2005EP1378015A4 Method and apparatus for providing a high-performance active matrix pixel using organic thin-film transistors
08/03/2005EP1066416B1 Passivating etchants for metallic particles
08/03/2005CN1650445A Silicon particles used as additives for improving the charge carrier mobility in organic semiconductors
08/03/2005CN1650444A Programmable structure, an array including the structure, and methods of forming the same
08/03/2005CN1650437A Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique
08/03/2005CN1650436A Plasma oscillation switching device
08/03/2005CN1650435A Electronic devices comprising bottom-gate TFTs and their manufacture
08/03/2005CN1650434A Integrating device
08/03/2005CN1650433A Line element and method of manufacturing the line element
08/03/2005CN1650431A Non-volatile memory and method of forming thereof
08/03/2005CN1650409A Method of making transistors
08/03/2005CN1650402A Crystallization apparatus and crystallization method
08/03/2005CN1650225A Active matrix display device
08/03/2005CN1650224A Thin film transistor array panel
08/03/2005CN1650155A Barometric pressure sensor
08/03/2005CN1649181A Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it
08/03/2005CN1649174A Thin film transistor and method for fabricating the same
08/03/2005CN1649173A Semiconductor apparatus and method of manufacturing the same
08/03/2005CN1649172A Semiconductor device and method for fabricating the same
08/03/2005CN1649171A Structures for planar and multiple-gate transistors formed on SOI and its method
08/03/2005CN1649170A Metal contact structure and method of manufacture
08/03/2005CN1649169A Semiconductor device
08/03/2005CN1649168A Semiconductor device
08/03/2005CN1649167A Semiconductor device and manufacturing method thereof
08/03/2005CN1649166A Micro machinery variable capacitor for realizing high capacity valve regulating range using curved polar plate
08/03/2005CN1649164A Solid state image pick-up device capable of reducing power consumption
08/03/2005CN1649160A Semiconductor device and method of manufacturing the same
08/03/2005CN1649157A Capacitor element and method for fabricating the same
08/03/2005CN1649156A Semiconductor device and method for manufacturing the same
08/03/2005CN1649155A CMOS device, method for fabricating the same and method for generating mask data
08/03/2005CN1649150A Circuit and method for amplifying signal
08/03/2005CN1649143A Electro-static discharge protection circuit and method for making the same
08/03/2005CN1649125A Manufacturing method of semiconductor device
08/03/2005CN1649118A Semiconductor device having conducting portion of upper and lower conductive layers, and method of fabricating the same
08/03/2005CN1649117A Device package and methods for the fabrication and testing thereof
08/03/2005CN1649113A Method for manufacturing a semiconductor device
08/03/2005CN1649112A Nickel salicide processes and methods of fabricating semiconductor devices using the same
08/03/2005CN1649111A Self-aligned inner gate recess channel transistor and method of forming the same
08/03/2005CN1649109A Laser annealing apparatus and annealing method
08/03/2005CN1649107A Device and methodology for reducing effective dielectric constant in semiconductor devices
08/03/2005CN1649101A Manufacturing method for compound semiconductor device
08/03/2005CN1649097A Method of manufacturing a semiconductor device including electrodes on main and reverse sides of a semiconductor chip
08/03/2005CN1649096A Forming method of contact hole, and manufacturing method of semiconductor device, liquid crystal display device and EL display device
08/03/2005CN1649095A Method for forming a contact of a semiconductor device
08/03/2005CN1649093A Semiconductor element structure and its producing method
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