Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2006
04/25/2006US7035143 NAND flash memory device and method of reading the same
04/25/2006US7034409 Method of eliminating photoresist poisoning in damascene applications
04/25/2006US7034407 Semiconductor device and method for fabricating the same
04/25/2006US7034403 Durable electronic assembly with conductive adhesive
04/25/2006US7034402 Device with segmented ball limiting metallurgy
04/25/2006US7034401 Packaging substrates for integrated circuits and soldering methods
04/25/2006US7034399 Forming a porous dielectric layer
04/25/2006US7034385 Topless semiconductor package
04/25/2006US7034381 Semiconductor device
04/25/2006US7034379 Carbide emitter mask etch stop
04/25/2006US7034378 Fuse structure used in an integrated circuit device
04/25/2006US7034377 Semiconductor device and method of manufacturing the device
04/25/2006US7034376 Schottky barrier diode semiconductor device
04/25/2006US7034374 MRAM layer having domain wall traps
04/25/2006US7034373 Wide band cross point switch using MEMS technology
04/25/2006US7034372 HGA dynamics testing with shear mode piezo transducers
04/25/2006US7034371 Biochip for the capacitive stimulation and/or detection of biological tissue and a method for its production
04/25/2006US7034369 Semiconductor device and method for manufacturing the same
04/25/2006US7034368 Semiconductor memory device and fabrication method thereof using damascene gate and epitaxial growth
04/25/2006US7034367 Semiconductor device having an STI structure and a dummy pattern with a rectangular shape
04/25/2006US7034366 Semiconductor device, manufacturing method thereof, and CMOS integrated circuit device
04/25/2006US7034365 Integrated circuit devices having contact holes exposing gate electrodes in active regions
04/25/2006US7034362 Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures
04/25/2006US7034360 High voltage transistor and method of manufacturing the same
04/25/2006US7034359 Vertical MOS transistor
04/25/2006US7034358 Vertical transistor, and a method for producing a vertical transistor
04/25/2006US7034357 Insulated gate semiconductor device
04/25/2006US7034356 Non-volatile semiconductor memory device and process for fabricating the same
04/25/2006US7034355 Nonvolatile semiconductor storage and its manufacturing method
04/25/2006US7034354 Semiconductor structure with lining layer partially etched on sidewall of the gate
04/25/2006US7034353 Methods for enhancing capacitors having roughened features to increase charge-storage capacity
04/25/2006US7034351 Memory cell and method for forming the same
04/25/2006US7034349 Ferroelectric transistor for storing two data bits
04/25/2006US7034348 Magnetoresistive effect element and magnetic memory device
04/25/2006US7034346 Semiconductor device and method for manufacturing the same
04/25/2006US7034345 High-power, integrated AC switch module with distributed array of hybrid devices
04/25/2006US7034337 Semiconductor device and method of manufacturing the same
04/25/2006US7034335 ITO film contact structure, TFT substrate and manufacture thereof
04/25/2006US7034334 Liquid crystal display apparatus
04/25/2006US7034331 Material systems for semiconductor tunnel-junction structures
04/25/2006US7034329 Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure
04/25/2006US7034328 Vertical geometry InGaN LED
04/25/2006US7033958 Semiconductor device and process for producing the same
04/25/2006US7033951 Process for forming pattern and method for producing liquid crystal display apparatus
04/25/2006US7033950 Graded junction termination extensions for electronic devices
04/25/2006US7033932 Method for fabricating a semiconductor device having salicide
04/25/2006US7033919 Fabrication of dual work-function metal gate structure for complementary field effect transistors
04/25/2006US7033918 Semiconductor device including p-channel type transistor, and production method for manufacturing such semiconductor device
04/25/2006US7033915 Method for crystallizing amorphous silicon film
04/25/2006US7033913 Semiconductor device and method of manufacturing the same
04/25/2006US7033912 Silicon carbide on diamond substrates and related devices and methods
04/25/2006US7033901 Buried power buss utilized as a ground strap for high current, high power semiconductor devices and a method for providing the same
04/25/2006US7033897 Encapsulated spacer with low dielectric constant material to reduce the parasitic capacitance between gate and drain in CMOS technology
04/25/2006US7033896 Field effect transistor with a high breakdown voltage and method of manufacturing the same
04/25/2006US7033895 Method of fabricating a MOS transistor with elevated source/drain structure using a selective epitaxial growth process
04/25/2006US7033892 Trench power MOSFET in silicon carbide and method of making the same
04/25/2006US7033891 Trench gate laterally diffused MOSFET devices and methods for making such devices
04/25/2006US7033889 Trenched semiconductor devices and their manufacture
04/25/2006US7033888 Engineered metal gate electrode
04/25/2006US7033887 Process for producing an integrated electronic circuit that includes a capacitor
04/25/2006US7033886 Partial vertical memory cell and method of fabricating the same
04/25/2006US7033882 Method of forming on-chip decoupling capacitor by selectively etching grain boundaries in electrode
04/25/2006US7033877 Vertical replacement-gate junction field-effect transistor
04/25/2006US7033876 Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
04/25/2006US7033875 MOS transistor and fabrication method thereof
04/25/2006US7033872 Thin film transistor and method of fabricating the same
04/25/2006US7033871 Method of manufacturing semiconductor device
04/25/2006US7033868 Semiconductor device and method of manufacturing same
04/25/2006US7033863 Semiconductor device and manufacturing method for the same
04/25/2006US7033848 Light emitting device and method of manufacturing the same
04/25/2006US7033846 Method for manufacturing semiconductor devices by monitoring nitrogen bearing species in gate oxide layer
04/25/2006US7033613 Serine substituted gold inserted apoferritin; transport proteins; for use in producing semiconductors
04/25/2006US7033515 Method for manufacturing microstructure
04/25/2006US7033438 Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate
04/25/2006US7033437 Method for making semiconductor device including band-engineered superlattice
04/25/2006US7033435 Process for preparing p-n junctions having a p-type ZnO film
04/25/2006US7033434 Mask for crystallizing, method of crystallizing amorphous silicon and method of manufacturing array substrate using the same
04/25/2006US7032392 Method and apparatus for cooling an integrated circuit package using a cooling fluid
04/20/2006WO2006042194A2 Variable capacitor single-electron device
04/20/2006WO2006042040A2 Bandgap engineered mos-gated power transistors
04/20/2006WO2006041823A2 Mos-gated transistor with reduced miller capacitance
04/20/2006WO2006041798A1 Low noise field effect transistor
04/20/2006WO2006041633A2 Virtual ground memory array and method therefor
04/20/2006WO2006041632A2 A virtual ground memory array and method therefor
04/20/2006WO2006041630A2 Low temperature selective epitaxial growth of silicon germanium layers
04/20/2006WO2006041578A1 Thin-film transistor having semiconducting multi-cation oxide channel and methods
04/20/2006WO2006041153A1 Method for manufacturing electroconductive pattern and electronic device, and electronic device
04/20/2006WO2006041144A1 Etching method and manufacturing method of semiconductor device
04/20/2006WO2006041087A1 High-frequency integrated circuit
04/20/2006WO2006040736A1 A mosfet for high voltage applications and a method of fabricating same
04/20/2006WO2006040720A2 Controlling parasitic bipolar gain in a cmos device
04/20/2006WO2006012298A9 Gallium nitride material and methods associated with the same
04/20/2006WO2005117133A3 Esd-protection structures for semiconductor components
04/20/2006WO2005111817A3 Semiconductor device and method of forming the same
04/20/2006WO2005098960A3 Bipolar-transistor and method for the production of a bipolar-transistor
04/20/2006WO2005036599A3 Non-volatile memory device
04/20/2006WO2005014889A3 Deposition method for nanostructure materials
04/20/2006US20060084273 Semiconductor device using damascene technique and manufacturing method therefor
04/20/2006US20060084246 Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device
04/20/2006US20060084234 Method for producing a spacer structure