Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2006
04/18/2006US7030466 Intermediate structure for making integrated circuit device and wafer
04/18/2006US7030465 Semiconductor device that can increase the carrier mobility and method for fabricating the same
04/18/2006US7030464 Semiconductor device and method of manufacturing the same
04/18/2006US7030463 Tuneable electromagnetic bandgap structures based on high resistivity silicon substrates
04/18/2006US7030462 Heterojunction bipolar transistor having specified lattice constants
04/18/2006US7030461 Device for electrostatic discharge protection
04/18/2006US7030460 Selectable capacitance apparatus and methods
04/18/2006US7030459 Three-dimensional memory structure and manufacturing method thereof
04/18/2006US7030458 Gate dielectric antifuse circuits and methods for operating same
04/18/2006US7030457 Capacitor and method for producing a capacitor
04/18/2006US7030456 Resistance-changing function body, memory element, manufacturing method therefor, memory device, semiconductor device and electronic equipment
04/18/2006US7030455 Integrated electromagnetic shielding device
04/18/2006US7030454 Semiconductor devices and methods of forming a trench in a semiconductor device
04/18/2006US7030452 Atomic-scale contacts and gaps are useful as a variety of nanosensors including chemical sensors, biosensors, hydrogen ion sensors, heavy metal ion sensors, magnetoresistive sensors, and molecular switches
04/18/2006US7030451 Made by fabricating an integrated circuit components and a silicon substrate; doping nitrogen into the processed substrate; depositing nickel onto the processed substrate; annealing the processed substrate so as to form nickel mono-silicide; removing the unreacted nickel
04/18/2006US7030450 Precursor for hafnium oxide layer and method for forming halnium oxide film using the precursor
04/18/2006US7030449 Semiconductor integrated circuit device having capacitor element
04/18/2006US7030448 Mask ROM and the method of forming the same and the scheme of reading the device
04/18/2006US7030447 Low voltage transient voltage suppressor
04/18/2006US7030445 Power MOSFET, power MOSFET packaged device, and method of manufacturing power MOSFET
04/18/2006US7030444 Space process to prevent the reverse tunneling in split gate flash
04/18/2006US7030443 MIM capacitor
04/18/2006US7030442 Stack-film trench capacitor and method for manufacturing the same
04/18/2006US7030441 Capacitor dielectric structure of a DRAM cell and method for forming thereof
04/18/2006US7030439 DRAM memory cell and method of manufacturing the same
04/18/2006US7030436 Embedded DRAM gain memory cell having MOS transistor body provided with a bi-polar transistor charge injecting means
04/18/2006US7030435 Single transistor rare earth manganite ferroelectric nonvolatile memory cell
04/18/2006US7030432 Method of fabricating an integrated circuit that seals a MEMS device within a cavity
04/18/2006US7030431 Metal gate with composite film stack
04/18/2006US7030430 Transition metal alloys for use as a gate electrode and devices incorporating these alloys
04/18/2006US7030429 Hetero-junction bipolar transistor and the method for producing the same
04/18/2006US7030428 Strain balanced nitride heterojunction transistors
04/18/2006US7030427 Solid-state imaging device and method of manufacturing the same
04/18/2006US7030426 Power semiconductor component in the planar technique
04/18/2006US7030425 Buried emitter contact for thyristor-based semiconductor device
04/18/2006US7030424 Substrate, method of manufacturing the same and display apparatus having the same
04/18/2006US7030412 Minimally-patterned semiconductor devices for display applications
04/18/2006US7030411 Electronic unit integrated into a flexible polymer body
04/18/2006US7030410 Resistance variable device
04/18/2006US7030409 Organic semiconductor polymer for organic thin film transistor containing quinoxaline ring in the backbone chain
04/18/2006US7030408 Molecular wire transistor (MWT)
04/18/2006US7030406 Semiconductor photocathode and photoelectric tube using the same
04/18/2006US7030405 Method and apparatus for resistance variable material cells
04/18/2006US7030258 Water-capturing agent and organic EL device
04/18/2006US7030036 Method of forming oxide layer in semiconductor device
04/18/2006US7030026 Semiconductor device fabrication method
04/18/2006US7030025 Method of manufacturing flotox type eeprom
04/18/2006US7030024 Dual-gate structure and method of fabricating integrated circuits having dual-gate structures
04/18/2006US7030014 Semiconductor constructions and electronic systems comprising metal silicide
04/18/2006US7030013 Method for fabricating semiconductor device using high dielectric material
04/18/2006US7030012 Method for manufacturing tungsten/polysilicon word line structure in vertical DRAM
04/18/2006US7030003 Compound semiconductor device, production method thereof, light-emitting device and transistor
04/18/2006US7030001 Method for forming a gate electrode having a metal
04/18/2006US7030000 Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element
04/18/2006US7029996 Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification
04/18/2006US7029994 Strained channel on insulator device
04/18/2006US7029989 Semiconductor device and method of manufacturing the same
04/18/2006US7029988 Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium
04/18/2006US7029985 Method of forming MIS capacitor
04/18/2006US7029981 Radiation hardened bipolar junction transistor
04/18/2006US7029979 Methods for manufacturing semiconductor devices
04/18/2006US7029977 Fabrication method of semiconductor wafer
04/18/2006US7029974 Split gate type nonvolatile semiconductor memory device, and method of fabricating the same
04/18/2006US7029969 Method of manufacture of a silicon carbide MOSFET including a masking with a tapered shape and implanting ions at an angle
04/18/2006US7029968 Method of forming a PIP capacitor
04/18/2006US7029965 Semiconductor device and manufacturing method thereof
04/18/2006US7029964 Method of manufacturing a strained silicon on a SiGe on SOI substrate
04/18/2006US7029963 Semiconductor damascene trench and methods thereof
04/18/2006US7029960 Device manufacturing method
04/18/2006US7029958 Self aligned damascene gate
04/18/2006US7029957 Method of manufacturing semiconductor device having thin film SOI structure
04/18/2006US7029956 Memory system capable of operating at high temperatures and method for fabricating the same
04/18/2006US7029949 Method for fabricating encapsulated semiconductor components having conductive vias
04/18/2006US7029945 Organic field effect transistor with an organic dielectric
04/18/2006US7029939 P-type semiconductor manufacturing method and semiconductor device
04/18/2006US7029938 Method for forming patterns on a semiconductor device using a lift off technique
04/18/2006US7029605 Borazine skeletal molecules in an inorganic or organic material molecule
04/18/2006CA2431064C System and method for electrically induced breakdown of nanostructures
04/13/2006WO2006039715A1 Semiconductor devices having bonded interfaces and methods for making the same
04/13/2006WO2006039669A2 E-fuse with reverse bias p-n junction
04/13/2006WO2006039641A2 Improving short channel effect of mos devices by retrograde well engineering using tilted dopant implantation into recessed source/drain regions
04/13/2006WO2006039600A1 Independently accessed double-gate and tri-gate transistors in same process flow
04/13/2006WO2006039597A2 Metal gate transistors with epitaxial source and drain regions
04/13/2006WO2006039209A1 Low-voltage memory having flexible gate charging element
04/13/2006WO2006039037A1 Double gate device having a strained channel
04/13/2006WO2006039028A1 Plasma enhanced nitride layer
04/13/2006WO2006038974A2 A method and system for forming a feature in a high-k layer
04/13/2006WO2006038566A1 Semiconductor storage device and method for manufacturing the same
04/13/2006WO2006038504A1 Vertical field effect transistor and method for making the same
04/13/2006WO2006038459A1 Organic thin-film transistor material, organic thin-film transistor, field effect transistor and switching device
04/13/2006WO2006038390A1 Semiconductor device
04/13/2006WO2006038201A2 Power semiconductor device and corresponding circuit
04/13/2006WO2006038164A1 Semiconductor device having substrate comprising layer with different thicknesses and method of manufacturing the same
04/13/2006WO2006037927A1 Gate structure and method for making same
04/13/2006WO2006037612A1 Gate layer diode method and apparatus
04/13/2006WO2006037560A2 Nmos transistor
04/13/2006WO2006037526A2 Lateral dmos-transistor and method for the production thereof
04/13/2006WO2006020828A3 Top electrode for a dram capacitor
04/13/2006WO2006017016A3 Devices and methods of making the same
04/13/2006WO2005114744A3 Wide bandgap hemts with source connected field plates