Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2006
04/13/2006WO2005057664A3 Power mosfet and methods of making same
04/13/2006US20060079100 High density plasma grown silicon nitride
04/13/2006US20060079078 Method of producing a semiconductor device having an oxide film
04/13/2006US20060079060 Semiconductor device having elevated source/drain and method of fabricating the same
04/13/2006US20060079059 Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
04/13/2006US20060079041 Manufacturing method for a semiconductor device
04/13/2006US20060079038 Method of fabricating an electronic device
04/13/2006US20060079023 Semiconductor device and manufacturing method for the same
04/13/2006US20060077728 Method for fabricating flash memory device and structure thereof
04/13/2006US20060077712 Non-volatile semiconductor memory device, electronic card using the same and electronic apparatus
04/13/2006US20060077336 Semiconductor device and method of manufacturing the same
04/13/2006US20060077274 Solid state image pickup device and its driving method
04/13/2006US20060076680 Submicron contact fill using a CVD TiN barrier and high temperature PVD aluminum alloy deposition
04/13/2006US20060076656 Electro-optical device and electronic apparatus
04/13/2006US20060076650 Multilayered structure, multilayered structure array and method of manufacturing the same
04/13/2006US20060076649 Substrate for stressed systems and method of making same
04/13/2006US20060076648 System and method for protecting microelectromechanical systems array using structurally reinforced back-plate
04/13/2006US20060076647 Semiconductor component with a bipolar lateral power transistor
04/13/2006US20060076644 Nanowire filament
04/13/2006US20060076643 Fin-type antifuse
04/13/2006US20060076642 Semiconductor device and manufacturing method thereof
04/13/2006US20060076641 Methods of fabricating phase changeable semiconductor memory devices including multi-plug conductive structures and related devices
04/13/2006US20060076640 Semiconductor device
04/13/2006US20060076635 Magnetoresistive memory device assemblies, and methods of forming magnetoresistive memory device assemblies
04/13/2006US20060076634 Method and system for packaging MEMS devices with incorporated getter
04/13/2006US20060076633 Methods and apparatus for particle reduction in MEMS devices
04/13/2006US20060076632 System and method for display device with activated desiccant
04/13/2006US20060076631 Method and system for providing MEMS device package with secondary seal
04/13/2006US20060076630 Integrated Transistor devices
04/13/2006US20060076629 Semiconductor devices with isolation and sinker regions containing trenches filled with conductive material
04/13/2006US20060076628 Integrated circuit with bulk and soi devices connected with an epitaxial region
04/13/2006US20060076627 Ultra shallow junction formation by epitaxial interface limited diffusion
04/13/2006US20060076626 Semiconductor integrated circuit device, contactless electronic device, and handheld terminal
04/13/2006US20060076624 Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of manufacturing the same
04/13/2006US20060076623 High mobility plane CMOS SOI
04/13/2006US20060076621 Lateral semiconductor transistor
04/13/2006US20060076620 Semiconductor device
04/13/2006US20060076619 Dielectric plug in mosfets to suppress short-channel effects
04/13/2006US20060076618 Semiconductor device having variable thickness insulating film and method of manufacturing same
04/13/2006US20060076617 MOS-gated transistor with reduced miller capacitance
04/13/2006US20060076616 High density memory array having increased channel widths
04/13/2006US20060076615 Vertical field-effect transistor in source-down structure
04/13/2006US20060076614 Semiconductor device
04/13/2006US20060076613 Semiconductor device
04/13/2006US20060076612 Semiconductor device and manufacturing method of the same
04/13/2006US20060076611 Semiconductor device and method of manufacturing the same
04/13/2006US20060076610 Semiconductor integrated circuit device with reduced leakage current
04/13/2006US20060076609 Electronic device including an array and process for forming the same
04/13/2006US20060076608 Cell structure of non-volatile memory device and method for fabricating the same
04/13/2006US20060076607 Non-volatile memory and method of fabricating same
04/13/2006US20060076606 Method for simultaneous fabrication of a nanocrystal and non-nanocrystal device
04/13/2006US20060076605 Improved flash forward tunneling voltage (ftv) flash memory device
04/13/2006US20060076604 Virtual ground memory array and method therefor
04/13/2006US20060076603 Semiconductor device having polycide wiring layer, and manufacturing method of the same
04/13/2006US20060076602 Dram cell pair and dram memory cell array
04/13/2006US20060076601 Dynamic random access memory structure
04/13/2006US20060076600 Semiconductor device and method for fabricating the same
04/13/2006US20060076599 Semiconductor memory devices including offset active regions
04/13/2006US20060076598 Semiconductor device and method of fabrication
04/13/2006US20060076597 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
04/13/2006US20060076596 Semiconductor device
04/13/2006US20060076595 Dynamic random access memory cell and fabricating method thereof
04/13/2006US20060076594 Semiconductor memory device
04/13/2006US20060076593 Method to sputter deposit metal on a ferroelectric polymer
04/13/2006US20060076592 Integratable polarization rotator
04/13/2006US20060076586 Virtual ground memory array and method therefor
04/13/2006US20060076584 Fabrication of electronic and photonic systems on flexible substrates by layer transfer method
04/13/2006US20060076583 Semiconductor device and manufacturing method thereof
04/13/2006US20060076582 Solid-state imaging device, method for manufacturing the same and interline transfer CCD image sensor
04/13/2006US20060076580 Image sensor with vertically integrated thin-film photodiode
04/13/2006US20060076579 Semiconductor transistor having structural elements of differing materials
04/13/2006US20060076577 High electron mobility transistors with Sb-based channels
04/13/2006US20060076576 High electron mobility epitaxial substrate
04/13/2006US20060076575 Semiconductor device
04/13/2006US20060076568 Side-emitting optical coupling device
04/13/2006US20060076563 Method of forming a pattern, method of forming wiring, semiconductor device, TFT device, electro-optic device, and electronic instrument
04/13/2006US20060076562 Thin film transistor array panel and method for manufacturing the same
04/13/2006US20060076561 Active matrix type display device and method of manufacturing the same
04/13/2006US20060076560 Thin-film semiconductor device, electro-optical device, and electronic apparatus
04/13/2006US20060076559 Method of fabricating an epitaxially grown layer
04/13/2006US20060076556 Semiconductor device and method for manufacturing the same
04/13/2006US20060076555 Detection and repair system and method
04/13/2006US20060076554 Organic semiconductor material, organic semiconductor structure, and organic semiconductor device
04/13/2006US20060076551 Nanotube based multi-level memory structure
04/13/2006US20060076550 Light emitting display and light emitting display panel
04/13/2006US20060076549 Semiconductor memory
04/13/2006US20060076548 PRAMs having a plurality of active regions located vertically in sequence and methods of forming the same
04/13/2006US20060076547 Three-dimensional viewing and editing of microcircuit design
04/13/2006DE19958144B4 Programmierbare Zwischenverbindungszelle zum wahlweisen Verbinden von Schaltkreisknoten in einem integrierten Schaltkreis und Anordnung programmierbarer Zwischenverbindungszellen Programmable interconnect cell for selectively connecting circuit nodes in an integrated circuit and array of programmable interconnect cells
04/13/2006DE19922802B4 Verfahren zur Herstellung eines vertikal doppelt diffundierter MOSFETS A method for producing a vertical double diffused MOSFETS
04/13/2006DE19739684B4 Verfahren zur Herstellung von Chipstapeln Process for the preparation of chip stacks
04/13/2006DE19600780B4 Verfahren zum Kontaktieren von Bereichen mit verschiedener Dotierung in einem Halbleiterbauelement und Halbleiterbauelement Method of contacting of regions of different doping within a semiconductor device and semiconductor device
04/13/2006DE102004063578A1 Fabrication of dual gate electrodes for metal oxide semiconductor field effect transistor devices, involves depositing thin layer with high dielectric constant or pure oxide layer on one region and thick oxide layer on the other region
04/13/2006DE102004058877A1 Semiconductor chip comprises a front section with a semiconductor functional element, and a rear section
04/13/2006DE102004048607A1 Halbleiterbauelement Semiconductor device
04/13/2006DE102004047956A1 NMOS-Transistor NMOS transistor
04/13/2006DE102004047772A1 Lateraler Halbleitertransistor Lateral semiconductor transistor
04/13/2006DE102004047749A1 Halbleiterbauteil sowie dafür geeignetes Herstellungsverfahren Semiconductor device and manufacturing method suitable therefor
04/13/2006DE102004047626A1 Thyristor, has semiconductor body with external area that is adjacent to internal area, where charge carrier rating life monotonically decreases within external area with increased separation distance of internal area
04/13/2006DE102004024661B4 Trench transistor manufacturing method, by back-forming layer in upper trench region, and semiconductor material on side walls of trench before forming new semiconductor material on side walls