| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/22/2006 | US20060131655 Formation of deep trench airgaps and related applications |
| 06/22/2006 | US20060131651 Semiconductor substrate and its fabrication method |
| 06/22/2006 | US20060131650 Bipolar reading technique for a memory cell having an electrically floating body transistor |
| 06/22/2006 | US20060131647 Connection, configuration, and production of a buried semiconductor layer |
| 06/22/2006 | US20060131646 Scalable planar DMOS transistor structure and its fabricating methods |
| 06/22/2006 | US20060131645 Semiconductor device and manufacturing method thereof |
| 06/22/2006 | US20060131643 Semiconductor device and method of manufacturing the semiconductor device |
| 06/22/2006 | US20060131642 Semiconductor storage |
| 06/22/2006 | US20060131641 Semiconductor device and method of manufacturing the same |
| 06/22/2006 | US20060131640 Memory array of non-volatile electrically alterable memory cells for storing multiple data |
| 06/22/2006 | US20060131639 Scalable flash EEPROM memory cell with notched floating gate and graded source region |
| 06/22/2006 | US20060131638 Nonvolatile semiconductor memory and a fabrication method thereof |
| 06/22/2006 | US20060131637 Bit line structure and production method thereof |
| 06/22/2006 | US20060131636 Non-volatile memory device having improved erase efficiency and method of manufacturing the same |
| 06/22/2006 | US20060131635 Flash memory device and manufacturing method thereof |
| 06/22/2006 | US20060131634 Non-volatile memory, non-volatile memory cell and operation thereof |
| 06/22/2006 | US20060131633 Integrated two device non-volatile memory |
| 06/22/2006 | US20060131631 Non-volatile transistor memory array incorporating read-only elements with single mask set |
| 06/22/2006 | US20060131630 Method for forming storage node of capacitor in semiconductor device |
| 06/22/2006 | US20060131629 Magnetic random access memory having magnetoresistive element with nonmagnetic metal layer |
| 06/22/2006 | US20060131628 Nonvolatile memory and fabrication method thereof |
| 06/22/2006 | US20060131627 Ferroelectric material, its manufacture method and ferroelectric memory |
| 06/22/2006 | US20060131622 Semiconductor device having a silicon layer in a gate electrode |
| 06/22/2006 | US20060131620 Monolithic microwave integrated circuit compatible FET structure |
| 06/22/2006 | US20060131619 Self-aligned schottky-barrier clamped planar DMOS transistor structure and its manufacturing methods |
| 06/22/2006 | US20060131618 Chalcogenide random access memory and method of fabricating the same |
| 06/22/2006 | US20060131617 Frequency conversion circuit for direct conversion receiving, semiconductor integrated circuit therefor, and direct conversion receiver |
| 06/22/2006 | US20060131616 Copperless flexible circuit |
| 06/22/2006 | US20060131615 Structures and methods for enhancing capacitors in integrated circuits |
| 06/22/2006 | US20060131614 Memory cell structure |
| 06/22/2006 | US20060131610 Electronic device and method for designing the same |
| 06/22/2006 | US20060131608 Semiconductor device |
| 06/22/2006 | US20060131607 Compound semiconductor device and process for producing the same |
| 06/22/2006 | US20060131605 Low capacitance two-terminal barrier controlled TVS diodes |
| 06/22/2006 | US20060131602 Illumination assembly and method of making same |
| 06/22/2006 | US20060131597 Light-emitting diode and method for manufacturing the same |
| 06/22/2006 | US20060131589 Boron carbide particle detectors |
| 06/22/2006 | US20060131587 Method of manufacturing an active matrix substrate and an image display device using the same |
| 06/22/2006 | US20060131586 Organic thin film transistor array panel and manufacturing method thereof |
| 06/22/2006 | US20060131585 Thin film transistor array panel |
| 06/22/2006 | US20060131584 Process to improve transistor drive current through the use of strain |
| 06/22/2006 | US20060131583 Method for manufacturing a semiconductor device |
| 06/22/2006 | US20060131582 Thin film transistor array panel and manufacturing method thereof |
| 06/22/2006 | US20060131581 Thin film transistor array panel and method for manufacturing the same |
| 06/22/2006 | US20060131580 Thin film transistor array panel and liquid crystal display |
| 06/22/2006 | US20060131573 Organic semiconductor device and process of manufacturing the same |
| 06/22/2006 | US20060131570 Substituted anthracenes and electronic devices containing the substituted anthracenes |
| 06/22/2006 | US20060131569 Organic memory device and method of manufacturing the same |
| 06/22/2006 | US20060131568 Device having an organic transistor integrated with an organic light-emitting diode's heterojunctions |
| 06/22/2006 | US20060131564 Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors |
| 06/22/2006 | US20060131562 Organic light-emitting device with improved layer structure |
| 06/22/2006 | US20060131561 Organic thin-film transistor and method for manufacturing same |
| 06/22/2006 | US20060131560 Rewritable nano-surface organic electrical bistable devices |
| 06/22/2006 | US20060131559 Method of manufacturing a semiconductor device with a silicon-germanium gate electrode |
| 06/22/2006 | US20060131556 Small electrode for resistance variable devices |
| 06/22/2006 | US20060131555 Resistance variable devices with controllable channels |
| 06/22/2006 | US20060131554 Nonvolatile memory device having two or more resistance elements and methods of forming and using the same |
| 06/22/2006 | US20060130746 Method for forming nickel silicide film, method for manufacturing semiconductor device, and method for etching nickel silicide |
| 06/22/2006 | US20060130584 Acceleration sensor |
| 06/22/2006 | US20060130581 Acceleration sensor |
| 06/22/2006 | US20060130580 Acceleration sensor manufactureable by simplified method |
| 06/22/2006 | US20060130577 Acceleration sensor |
| 06/22/2006 | DE102005059534A1 Halbleitervorrichtung und Herstellungsverfahren der gleichen A semiconductor device and manufacturing method of the same |
| 06/22/2006 | DE102004059640A1 Halbleitereinrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation |
| 06/22/2006 | DE102004059428A1 Herstellungsverfahren für eine mikroelektronische Elektrodenstruktur, insbesondere für ein PCM-Speicherelement, und entsprechende mikroelektronische Elektrodenstruktur Manufacturing method for a microelectronic electrode structure, in particular for a PCM storage element and corresponding microelectronic electrode structure |
| 06/22/2006 | CA2590626A1 Transistors having buried n-type and p-type regions beneath the source region and methods of fabricating the same |
| 06/21/2006 | EP1672701A2 Zener diode and methods for fabricating and packaging same |
| 06/21/2006 | EP1672700A2 Field effect semiconductor device |
| 06/21/2006 | EP1672699A1 Voltage controlled bidirectional switch |
| 06/21/2006 | EP1672698A1 Power semiconductor |
| 06/21/2006 | EP1672374A1 Acceleration sensor |
| 06/21/2006 | EP1671376A2 SPLIT POLY-SiGe/POLY-Si ALLOY GATE STACK |
| 06/21/2006 | EP1671374A2 Insulated gate type semiconductor device and manufacturing method thereof |
| 06/21/2006 | EP1671373A1 Hybrid bipolar-mos trench gate semiconductor device |
| 06/21/2006 | EP1671372A1 Lateral thin-film soi device having a field plate with isolated metallic regions |
| 06/21/2006 | EP1671367A1 2-transistor memory cell and method for manufacturing |
| 06/21/2006 | EP1671365A2 Non-volatile memory device |
| 06/21/2006 | EP1671364A1 Dram access transistor and method of formation |
| 06/21/2006 | EP1671358A2 Metal-insulator-metal capacitor and method of fabrication |
| 06/21/2006 | EP1671356A2 The production of a germanium oxynitride layer on a ge-based material |
| 06/21/2006 | EP1433211B1 Substituted pentacene semiconductors |
| 06/21/2006 | EP1370619B1 Solutions and dispersions of organic semiconductors |
| 06/21/2006 | EP1325519A4 Semiconductor apparatus with improved esd withstanding voltage |
| 06/21/2006 | EP1236224A4 Gate dielectrics and method of making with binary non-crystaline analogs of silicon dioxide |
| 06/21/2006 | EP1031992B1 Flash EEPROM system |
| 06/21/2006 | EP1016135A4 Fusion-bond electrical feed-through |
| 06/21/2006 | CN1791984A MRAM architecture and a method and system for fabricating MRAM memories utilizing the architecture |
| 06/21/2006 | CN1791973A Method for fabricating a self-aligned bipolar transistor having increased manufacturabily and related structure |
| 06/21/2006 | CN1791965A A structure for a semiconductor arrangement and a method of manufacturing a semiconductor arrangement |
| 06/21/2006 | CN1790751A Semiconductor device having actuator |
| 06/21/2006 | CN1790750A Thin film transistor, method of manufacturing the same, display apparatus having the same and method of manufacturing the display apparatus |
| 06/21/2006 | CN1790749A Organic thin-film transistor, method of fabricating the same, and flat panel display having the same |
| 06/21/2006 | CN1790748A Semiconductor device and method for manufacturing the same |
| 06/21/2006 | CN1790747A Semiconductor device and method for manufacturing the same |
| 06/21/2006 | CN1790746A Semiconductor device |
| 06/21/2006 | CN1790745A Power devices having trench-based source and gate electrodes |
| 06/21/2006 | CN1790744A Transistor, method of manufacturing transistor, and method of operating transistor |
| 06/21/2006 | CN1790743A Transistor and method of manufacturing the same |
| 06/21/2006 | CN1790742A Damascene gate field effect transistor with an internal spacer structure |
| 06/21/2006 | CN1790741A Semiconductor device and method for manufacturing the same |