| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/01/2006 | US20060113590 Method of forming a recess structure, recessed channel type transistor and method of manufacturing the recessed channel type transistor |
| 06/01/2006 | US20060113589 Top drain fet with integrated body short |
| 06/01/2006 | US20060113588 Self-aligned trench-type DMOS transistor structure and its manufacturing methods |
| 06/01/2006 | US20060113587 Transistor array for semiconductor memory devices and method for fabricating a vertical channel transistor array |
| 06/01/2006 | US20060113586 Charge trapping dielectric structure for non-volatile memory |
| 06/01/2006 | US20060113585 Non-volatile electrically alterable memory cells for storing multiple data |
| 06/01/2006 | US20060113584 Manufacturing method of a semiconductor device |
| 06/01/2006 | US20060113583 Twin EEPROM memory transistors with subsurface stepped floating gates |
| 06/01/2006 | US20060113581 Semiconductor memory device |
| 06/01/2006 | US20060113577 Semiconductor device |
| 06/01/2006 | US20060113576 Sacrificial self-aligned interconnect structure |
| 06/01/2006 | US20060113575 Storage electrode of a capacitor and a method of forming the same |
| 06/01/2006 | US20060113574 Field effect transistor |
| 06/01/2006 | US20060113573 Phase change memory cell with transparent conducting oxide for electrode contact layer |
| 06/01/2006 | US20060113571 Semiconductor structure for isolating integrated circuits of various operation voltages |
| 06/01/2006 | US20060113570 Implanting carbon to form P-type source drain extensions |
| 06/01/2006 | US20060113569 Control of threshold voltage in organic field effect transistors |
| 06/01/2006 | US20060113566 Structures and methods for fabricating vertically integrated HBT-FET device |
| 06/01/2006 | US20060113564 Heterostructure with rear-face donor doping |
| 06/01/2006 | US20060113563 Compound semiconductor epitaxial substrate and method for manufacturing the same |
| 06/01/2006 | US20060113554 Method for producing a vertically emitting laser |
| 06/01/2006 | US20060113549 Light-emitting device |
| 06/01/2006 | US20060113544 Semiconductor light-emitting device, method for manufacturing same, and linear light source |
| 06/01/2006 | US20060113543 Semiconductor device and method of fabricating the same |
| 06/01/2006 | US20060113542 Method for forming low defect density alloy graded layers and structure containing such layers |
| 06/01/2006 | US20060113541 Process for fabricating semiconductor device |
| 06/01/2006 | US20060113540 Reflective active matrix liquid crystal display and apparatus |
| 06/01/2006 | US20060113539 Field effect transistor |
| 06/01/2006 | US20060113538 Thin film transistor substrate and fabricating method thereof |
| 06/01/2006 | US20060113536 Display |
| 06/01/2006 | US20060113531 Semiconductor component and method for the production thereof |
| 06/01/2006 | US20060113530 Multifunctional linker molecules for tuning electronic charge transport through organic-inorganic composite structures and uses thereof |
| 06/01/2006 | US20060113529 Flat panel display |
| 06/01/2006 | US20060113528 Organic light-emitting device |
| 06/01/2006 | US20060113526 Organic semiconductor structure, manufacturing method of the same, and organic semiconductor device |
| 06/01/2006 | US20060113525 Organic electroluminescent device |
| 06/01/2006 | US20060113524 Polymer-based transistor devices, methods, and systems |
| 06/01/2006 | US20060113523 Organic semiconductor device |
| 06/01/2006 | US20060113522 Strained silicon fin structure |
| 06/01/2006 | US20060113521 Chalcogenide memory having a small active region |
| 06/01/2006 | US20060113520 Semiconductor integrated circuit device and method of manufacturing the same |
| 06/01/2006 | DE19909993B4 Verfahren zum Bilden von Bipolartransistoren mit selbstausrichtender epitaktischer Basis A method of forming bipolar transistors with self-aligned epitaxial base |
| 06/01/2006 | DE19743741B4 Herstellungsverfahren für eine Flüssigkristallanzeigevorrichtung Manufacturing method for a liquid crystal display device |
| 06/01/2006 | DE19700734B4 Verfahren zur Herstellung von Sensoren sowie nicht-vereinzelter Waferstapel Process for the production of sensors and non-singulated wafer stack |
| 06/01/2006 | DE112004001030T5 Finfet mit Doppelsiliziumgateschicht für chemisch-mechanische Poliereinebnung FinFET with double gate silicon layer for chemical mechanical Poliereinebnung |
| 06/01/2006 | DE102004058468A1 MOS-Transistor mit reduziertem Kink-Effekt und Verfahren zu seiner Herstellung MOS transistor with a reduced kink effect and process for its preparation |
| 06/01/2006 | DE102004057792A1 Semiconductor component to act as a diode, a transistor, an insulated gate bipolar transistor or a thyristor has a semiconductor body of a first doping type with active and edge areas |
| 06/01/2006 | DE102004057791A1 Trench transistor e.g. dense trench transistor, has semiconductor body, in which several cell field trenches are formed, and source region, body region and body contact region that are provided in mesa regions of trenches |
| 06/01/2006 | DE102004057237A1 Making contact holes in semiconductor body with insulated electrodes in trenches, employs thermal oxidation, planarization and remaining insulation layer as contact hole mask |
| 06/01/2006 | DE102004057235A1 Vertical trench transistor, has transistor cells with body regions and body contact regions arranged between body regions and contact holes, where dimensions and designs of body regions and body contact regions are selected |
| 06/01/2006 | DE102004056772A1 Lateral semiconductor component, e.g. to act as a bipolar component like a photo-intrinsic diode or an insulated gate bipolar transistor, has high electric strength |
| 06/01/2006 | DE102004056663A1 Halbleitereinrichtung und Gleichrichteranordnung Semiconductor device and rectifier arrangement |
| 06/01/2006 | CA2588114A1 Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same |
| 05/31/2006 | EP1662577A1 MOS Transistor with reduced kink effect and method of manufacturing |
| 05/31/2006 | EP1662576A1 Zinc oxide-based multilayer structural body and its producing method |
| 05/31/2006 | EP1662575A2 A NOT circuit |
| 05/31/2006 | EP1662564A1 Semiconductor package and manufacturing method thereof |
| 05/31/2006 | EP1662558A1 Field effect transistor and method for manufacturing same |
| 05/31/2006 | EP1662557A1 Heterojunction bipolar transistor |
| 05/31/2006 | EP1662021A2 Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film |
| 05/31/2006 | EP1661188A2 Magnetoresistive random access memory with reduced switching field variation |
| 05/31/2006 | EP1661186A2 Electronic device comprising an ldmos transistor |
| 05/31/2006 | EP1661185A1 Semiconductor component and method of manufacturing same |
| 05/31/2006 | EP1661177A2 Method for integrating metals having different work functions to form cmos gates having a high-k gate dielectric and related structure |
| 05/31/2006 | EP1661176A1 Self-aligned drain/channel junction in vertical pass transistor dram cell design for device scaling |
| 05/31/2006 | EP1661173A1 Method of fabricating an ultra-narrow channel semiconductor device |
| 05/31/2006 | EP1661172A2 Method for producing a semiconductor component with a praseodymium oxide dielectric |
| 05/31/2006 | EP1661163A2 Method for fabricating a nitrided silicon-oxide gate dielectric |
| 05/31/2006 | EP1661158A2 Device threshold control of front-gate silicon-on-insulator mosfet using a self-aligned back-gate |
| 05/31/2006 | EP1660973A2 Enhanced parimutuel wagering |
| 05/31/2006 | EP1495426A4 Derivatives having demand-based, adjustable returns, and trading exchange therefor |
| 05/31/2006 | EP1449240B1 Incorporation of nitrogen into high k dielectric film |
| 05/31/2006 | EP1135796B1 PROCESS FOR FORMING A SiON/SiO2 INTERLEVEL DIELECTRIC WITH AFTER-TREATMENT OF THE CVD SILICIUM OXYNITRIDE LAYER |
| 05/31/2006 | CN2784975Y 主动矩阵液晶显示面板 Active matrix liquid crystal display panel |
| 05/31/2006 | CN1781194A Method for production of a semiconductor device with auto-aligned metallisations |
| 05/31/2006 | CN1781193A Electronic device comprising a field-effect transistor for high-frequency applications |
| 05/31/2006 | CN1781187A Semiconductor fabrication process with asymmetrical conductive spacers |
| 05/31/2006 | CN1781185A Method to improve profile control and N/P loading in dual doped gate applications |
| 05/31/2006 | CN1781184A Droplet discharging device, method for forming pattern and method for manufacturing semiconductor device |
| 05/31/2006 | CN1779990A Organic thin film transistor and organic electroluminescent device using the same |
| 05/31/2006 | CN1779989A Silicon FET on anti-radiation reinforced special body-contacting insulator and preparation thereof |
| 05/31/2006 | CN1779988A Integrated high-voltage VDMOS transistor structure and production thereof |
| 05/31/2006 | CN1779987A Integrated high-voltage P-type LDMOS transistor structure and production thereof |
| 05/31/2006 | CN1779986A Semiconductor device |
| 05/31/2006 | CN1779980A Dielectric multilayer of microelectronic device and method of fabricating the same |
| 05/31/2006 | CN1779976A Capacitor insulating film, method for fabricating the same, capacitor element, method for fabricating the same, semiconductor memory device, and method for fabricating the same |
| 05/31/2006 | CN1779930A Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern |
| 05/31/2006 | CN1779929A Production of thin-film transistor |
| 05/31/2006 | CN1779538A Glass production for decreasing glass pendant amount and production for liquid-crystal display device with thin-membrane transistor |
| 05/31/2006 | CN1779537A Classificating apparatus |
| 05/31/2006 | CN1779535A Thin-membrane transistor array basiliar plate and repairing method |
| 05/31/2006 | CN1779521A Backlight module with stabilized illumination |
| 05/31/2006 | CN1779514A Optical sensor and display |
| 05/31/2006 | CN1258231C Dual bit multi-level ballistic MONOS memory, and manufacturing method, programming, and operation process for memory |
| 05/31/2006 | CN1258230C Polysilicon film transistor of liquid crystal display device and its mfg. method |
| 05/31/2006 | CN1258229C Bipolar transistor with multiple carrier accumulation layers as collector |
| 05/31/2006 | CN1258226C Mfg. method of semiconductor device and semiconductor device |
| 05/31/2006 | CN1258225C Nonvolatile storage device |
| 05/31/2006 | CN1258224C Monocrystalline/polycrystalline flash memory unit structure and array with low operation voltage |
| 05/31/2006 | CN1258211C Hafnium silicide target for forming gate oxide film and method for preparation thereof |