| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/06/2006 | US20060145271 Semiconductor device having low parasitic resistance and small junction leakage characteristic |
| 07/06/2006 | US20060145270 Semiconductor device having silicide-blocking layer and fabrication method thereof |
| 07/06/2006 | US20060145269 Semiconductor device having a capping layer including cobalt and method of fabricating the same |
| 07/06/2006 | US20060145268 Semiconductor device and method for fabricating the same |
| 07/06/2006 | US20060145267 Semiconductor device and method for manufacturing the same |
| 07/06/2006 | US20060145266 Semiconductor integrated circuit |
| 07/06/2006 | US20060145265 CMOS semiconductor device |
| 07/06/2006 | US20060145264 Stressed field effect transistors on hybrid orientation substrate |
| 07/06/2006 | US20060145257 Method of fabricating a semiconductor device having full depletion type logic transistors and partial depletion type memory transistors |
| 07/06/2006 | US20060145256 Prevention of parasitic channel in an integrated soi process |
| 07/06/2006 | US20060145255 Thin film transistor substrate |
| 07/06/2006 | US20060145254 Semiconductor devices including carrier accumulation layers and methods for fabricating the same |
| 07/06/2006 | US20060145253 MOS transistor and method of manufacturing the same |
| 07/06/2006 | US20060145252 Power semiconductor device and method of manufacturing the same |
| 07/06/2006 | US20060145251 Semiconductor device having high-voltage transistor and PIP capacitor and method for fabricating the same |
| 07/06/2006 | US20060145250 LDMOS transistor |
| 07/06/2006 | US20060145249 LDMOS transistor |
| 07/06/2006 | US20060145248 LDMOS transistor |
| 07/06/2006 | US20060145247 Trench transistor and method for producing it |
| 07/06/2006 | US20060145246 Integrated DRAM-NVRAM multi-level memory |
| 07/06/2006 | US20060145245 Field-effect transistor, its manufacturing method, and complementary field-effect transistor |
| 07/06/2006 | US20060145244 Sonos device and method of manufacturing the same |
| 07/06/2006 | US20060145243 Non-volatile memory device and manufacturing method and operating method thereof |
| 07/06/2006 | US20060145242 Semiconductor memory device and method of fabricating the same |
| 07/06/2006 | US20060145241 Non-planar flash memory array with shielded floating gates on silicon mesas |
| 07/06/2006 | US20060145240 Memory devices and methods of operating the same |
| 07/06/2006 | US20060145239 Flash EEPROM device and method for fabricating the same |
| 07/06/2006 | US20060145238 Diode structure for word-line protection in a memory circuit |
| 07/06/2006 | US20060145237 Non-volatile memory device and method of manufacturing the same |
| 07/06/2006 | US20060145236 Flash memory device and fabricating method thereof |
| 07/06/2006 | US20060145235 Erasable nonvolatile memory with sidewall storage |
| 07/06/2006 | US20060145233 Method of fabricating a semiconductor device capacitor having a dielectric barrier layer and a semiconductor device capacitor having the same |
| 07/06/2006 | US20060145232 Method for manufacturing semiconductor device including MIM capacitor |
| 07/06/2006 | US20060145231 Distributed capacitor array |
| 07/06/2006 | US20060145230 Power semiconductor switching element |
| 07/06/2006 | US20060145228 Semiconductor device |
| 07/06/2006 | US20060145227 Method for producing semiconductor memory devices and integrated memory device |
| 07/06/2006 | US20060145226 Magnetic RAM |
| 07/06/2006 | US20060145225 Fast remanent resistive ferroelectric memory |
| 07/06/2006 | US20060145221 CMOS image sensor and method for fabricating the same |
| 07/06/2006 | US20060145219 CMOS image sensor and method for fabricating the same |
| 07/06/2006 | US20060145199 Thin film layer, heating electrode, phase change memory including thin film layer and methods for forming the same |
| 07/06/2006 | US20060145198 Magnetic RAM |
| 07/06/2006 | US20060145197 CMOS image sensor and method for fabricating the same |
| 07/06/2006 | US20060145196 High-sensitivity image sensor and fabrication method thereof |
| 07/06/2006 | US20060145195 Backgated finfet having different oxide thicknesses |
| 07/06/2006 | US20060145194 Method for creating a functional interface between a nanoparticle, nanotube or nanowire, and a biological molecule or system |
| 07/06/2006 | US20060145192 Denise array structure for non-volatile semiconductor memories |
| 07/06/2006 | US20060145191 Semiconductor device and method of manufacturing such a device |
| 07/06/2006 | US20060145187 Gallium nitride semiconductor and method of manufacturing the same |
| 07/06/2006 | US20060145185 LDMOS gate controlled schottky diode |
| 07/06/2006 | US20060145184 Reverse MOS (RMOS) transistor, and methods of making and using the same |
| 07/06/2006 | US20060145183 Method of manufacturing a semiconductor device having a photon absorption layer to prevent plasma damage |
| 07/06/2006 | US20060145182 Nitride semiconductor element and method for manufacturing thereof |
| 07/06/2006 | US20060145163 Organic elctroluminescent display and method for manufacturing organic electroluminescent display |
| 07/06/2006 | US20060145162 Liquid crystal display device and method of manufacturing the same |
| 07/06/2006 | US20060145161 Liquid crystal display device and method for fabricating the same |
| 07/06/2006 | US20060145160 Liquid crystal display device and method of fabricating the same |
| 07/06/2006 | US20060145158 Poly-crystalline silicon thin film transistor |
| 07/06/2006 | US20060145157 TFT array substrate and fabrication method thereof |
| 07/06/2006 | US20060145156 Thin film transistor array panel and method manufacturing thereof |
| 07/06/2006 | US20060145155 TFT array substrate and the fabrication method thereof |
| 07/06/2006 | US20060145151 Transferring electric charging; coloring; ion permselective films used for display; comprises transition metal (for example, silver ion) as central atom, and basic ligands comprised of 5-membered heterocyclic aromatic compound (for example, pyrrole rings), in which position of central atom can be changed |
| 07/06/2006 | US20060145150 Flat panel display device and method of fabricating the same |
| 07/06/2006 | US20060145149 Integrated circuit comprising an organic semiconductor, and method for the production of an integrated circuit |
| 07/06/2006 | US20060145147 Organic light emitting display (OLED) and its fabrication method |
| 07/06/2006 | US20060145146 Method of forming conductive pattern, thin film transistor, and method of manufacturing the same |
| 07/06/2006 | US20060145145 Tertiary amine compounds, organic semiconductor devices using the same and organic electroluminescence devices using the same |
| 07/06/2006 | US20060145144 Vertical organic thin film transistor and organic light emitting transistor |
| 07/06/2006 | US20060145143 Electronic device and process for forming same |
| 07/06/2006 | US20060145142 Volatile metal beta-ketoiminate and metal beta-diiminate complexes |
| 07/06/2006 | US20060145141 Field effect transistor and method of manufacturing the same |
| 07/06/2006 | US20060145140 Organic field effect transistor and integrated circuit |
| 07/06/2006 | US20060145139 Organic semiconductor device and its manufacturing method |
| 07/06/2006 | US20060145134 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation |
| 07/06/2006 | US20060145119 Field grading material |
| 07/06/2006 | US20060144694 using ion beam sputtering; lamination on light emitting diodes |
| 07/06/2006 | DE202006007265U1 Chalcopyrite field-effect transistor for e.g. display, has gate electrode separated from active layer of inorganic semiconductor material by insulating layer, where current flow between electrical contacts is modulated at boundary of layers |
| 07/06/2006 | DE19925657B4 Verfahren zum Ausbilden eines selbstpositionierenden Kontakts in einem Halbleiterbauelement A method for forming a self-aligned contact in a semiconductor device |
| 07/06/2006 | DE19807010B4 Verfahren zur Herstellung einer nichtflüchtigen Speichereinrichtung A method of manufacturing a nonvolatile memory device |
| 07/06/2006 | DE19643903B4 Verfahren zur Herstellung eines Bipolartransistors mit Heteroübergang A process for producing a heterojunction bipolar junction |
| 07/06/2006 | DE112004001510T5 Speicherzellenstruktur mit einer Nitridschicht mit reduziertem Ladungsverlust und Verfahren zur Herstellung derselben Memory cell structure having nitride layer with reduced charge loss and method for manufacturing the same |
| 07/06/2006 | DE112004001163T5 Halbleiteranordnung eines vertikalen Typs A semiconductor device of a vertical type |
| 07/06/2006 | DE10333556B4 Halbleiterbauelement mit verbesserter Kommutierung A semiconductor device with improved commutation |
| 07/06/2006 | DE10260286B4 Verwendung eines Defekterzeugnungsverfahrens zum Dotieren eines Halbleiterkörpers Use of a Defekterzeugnungsverfahrens for doping a semiconductor body |
| 07/06/2006 | DE10214065B4 Verfahren zur Herstellung eines verbesserten Metallsilizidbereichs in einem Silizium enthaltenden leitenden Gebiet in einer integrierten Schaltung A process for preparing an improved Metallsilizidbereichs in a silicon-containing conductive region in an integrated circuit |
| 07/06/2006 | DE102005062532A1 Halbleiterbauelement und Kontaktstellenherstellungsverfahren A semiconductor device manufacturing method and contact points |
| 07/06/2006 | DE102005024371A1 Metal oxide semiconductor transistor for use in constant voltage generation circuit, has gate provided between source and drain regions, where number of source contacts in is smaller than number of drain contacts |
| 07/06/2006 | DE102004063406B4 Vorrichtung und Anordnung zum Verhindern von Plasmaladungsschäden Device and arrangement for preventing plasma damage to cargo |
| 07/06/2006 | DE102004036278B4 Halbleiterbauelement und Verfahren zum Betreiben des Halbleiterbauelements als elektronischer Schalter A semiconductor device and method of operating the semiconductor device as an electronic switch |
| 07/06/2006 | DE10060428B4 Mittels Feldeffekt steuerbares in beide Richtungen sperrendes Halbleiterbauelement und Verfahren zu dessen Herstellung By means of field-effect-controllable blocking in both directions semiconductor device and process for its preparation |
| 07/06/2006 | DE10047152B4 Hochvolt-Diode und Verfahren zu deren Herstellung High-voltage diode and methods for their preparation |
| 07/05/2006 | EP1677361A2 Semiconductor device and method for manufacture thereof |
| 07/05/2006 | EP1677360A2 Semiconductor device and fabrication method thereof |
| 07/05/2006 | EP1677359A1 Semiconductor device and method for manufacturing semiconductor device |
| 07/05/2006 | EP1677350A2 Semiconductor device having surface regions with different crystal orientation and manufacturing method |
| 07/05/2006 | EP1677310A1 Semiconductor memory device and storage method thereof |
| 07/05/2006 | EP1677122A1 Integrated semiconductor device |
| 07/05/2006 | EP1677121A1 Integrated semiconductor device |
| 07/05/2006 | EP1676343A2 Quantum dot structures |