Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2006
06/29/2006US20060138478 Semiconductor device and method of forming same
06/29/2006US20060138476 Dc amplifier and semiconductor integrated circuit therefor
06/29/2006US20060138475 Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a method
06/29/2006US20060138473 Semiconductor device and manufacturing method thereof
06/29/2006US20060138472 CMOS image sensor
06/29/2006US20060138471 CMOS image sensor and method for fabricating the same
06/29/2006US20060138469 Semiconductor device and fabricating method thereof
06/29/2006US20060138468 Semiconductor device with increased channel length and method for fabricating the same
06/29/2006US20060138467 Method of forming a small contact in phase-change memory and a memory cell produced by the method
06/29/2006US20060138465 3-D column select circuit layout in semiconductor memory devices
06/29/2006US20060138462 Method of making a semiconductor device
06/29/2006US20060138461 Electrode wiring substrate and display device
06/29/2006US20060138457 Nitride-based semiconductor device of reduced current leakage
06/29/2006US20060138456 Insulating gate AlGaN/GaN HEMT
06/29/2006US20060138455 Silicon carbide on diamond substrates and related devices and methods
06/29/2006US20060138454 Semiconductor device using a nitride semiconductor
06/29/2006US20060138447 Light emitting diode
06/29/2006US20060138444 Flip-chip bonding structure of light-emitting element using metal column
06/29/2006US20060138443 Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes
06/29/2006US20060138438 Method for manufacturing color element film-equipped substrate, color element film-equipped substrate, electro-optical device, and electronic device
06/29/2006US20060138429 Liquid crystal display device and method for fabricating the same
06/29/2006US20060138428 Liquid crystal display device and fabricating method thereof, and thin film patterning method applied thereto
06/29/2006US20060138427 Hybrid Circuit and Electronic Device Using Same
06/29/2006US20060138426 Liquid crystal display device and fabricating method thereof
06/29/2006US20060138425 Methods of forming semiconductor constructions
06/29/2006US20060138424 Contact portion of semiconductor device, and thin film transistor array panel for display device including the contact portion
06/29/2006US20060138423 Thin-film transistor, thin-film transistor sheet and their manufacturing method
06/29/2006US20060138422 Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof
06/29/2006US20060138421 Photoelectric conversion element and display device including the same
06/29/2006US20060138420 Display, array substrate, and display manufacturing method
06/29/2006US20060138419 Liquid crystal display and panel therefor
06/29/2006US20060138418 Organic light emitting display and method of fabricating the same
06/29/2006US20060138417 Liquid crystal display device and fabricating method thereof
06/29/2006US20060138416 Liquid crystal display device and method of fabricating the same
06/29/2006US20060138415 Pixel structure, thin film transistor and fabricating method thereof
06/29/2006US20060138414 Thin film transistor panel for multi-domain liquid crystal display
06/29/2006US20060138413 Method of manufacturing semiconductor device
06/29/2006US20060138412 CMOS image sensor and fabricating method thereof
06/29/2006US20060138410 Method for measuring information about a substrate, and a substrate for use in a lithographic apparatus
06/29/2006US20060138409 (4,5,9,10-Tetrahydro-pyren-2-yl)-carbamic acid 4-(2-methylsulfanyl-alkyl)-3,5-dinitro-benzyl ester, method of synthesizing thereof, and molecular electronic device using the same
06/29/2006US20060138408 Multifunctional linker molecules for tuning electronic charge transport through organic-inorganic composite structures and uses thereof
06/29/2006US20060138407 Method for manufacturing semiconductor device having super junction construction
06/29/2006US20060138406 OFET structures with both n- and p-type channels
06/29/2006US20060138405 Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display
06/29/2006US20060138404 Organic-inorganic composite insulating material for electronic element, method of producing same and field-effect transistor comprising same
06/29/2006US20060138403 Organic electronic devices including pixels
06/29/2006US20060138401 Electronic devices comprising conductive members that connect electrodes to other conductive members within a substrate and processes for forming the electronic devices
06/29/2006US20060138400 Novel compounds capable of forming photoconvertible organic thin film and articles having organic thin film
06/29/2006US20060138399 resist-removing solution for low-k film and a cleaning solution for via holes or capacitors; solutions comprising hydrogen fluoride (HF) and at least one member selected from organic acids and organic solvents (e.g. acetic acid, hexanol, lauryl alcohol, propylene glcol, glycerin, diethylene glycol)
06/29/2006US20060138398 Semiconductor device and fabrication method thereof
06/29/2006US20060138397 Manipulation of conductive and magnetic phases in an electron trapping semiconducting
06/29/2006US20060138396 Quantum-dot infrared photodetector
06/29/2006US20060138395 Semiconductor photoelectric surface and its manufacturing method, and photodetecting tube using semiconductor photoelectric surface
06/29/2006US20060138394 Structure having pores, device using the same, and manufacturing methods therefor
06/29/2006US20060138393 Ge precursor, GST thin layer formed using the same, phase-change memory device including the GST thin layer, and method of manufacturing the GST thin layer
06/29/2006US20060138322 Backside imaging through a doped layer
06/29/2006US20060137600 Lightly doped silicon carbide wafer and use thereof in high power devices
06/29/2006DE4115227B4 CCD-Bildwandler mit vier Taktsignalen CCD image sensor with four clock signals
06/29/2006DE202005020719U1 Schlaucheinsatzeinheit für ein Getränkeabgabesystem und Getränkeabgabesystem Cartridge unit for a beverage dispensing system and beverage dispensing system
06/29/2006DE19963674B4 Verfahren zur Ausbildung eines Oxynitridgatedielektrikums, Oxynitridgatedielektrikum und darauf angeordneter Gatestapel A method of forming a Oxynitridgatedielektrikums, Oxynitridgatedielektrikum and arranged thereon gate stack
06/29/2006DE19754462B4 Halbleitervorrichtungen Semiconductor devices
06/29/2006DE19525081B4 Verfahren und Vorrichtung zum Testen der Funktion von Mikrostrukturelementen Method and device for testing the function of microstructure elements
06/29/2006DE112004001117T5 Halbleiterbauelement und Verfahren zur Herstellung A semiconductor device and method for producing
06/29/2006DE10214175B4 Mittels Feldeffekt steuerbares Halbleiterbauelement und Verfahren zu dessen Herstellung By means of field-effect-controllable semiconductor component and process for its preparation
06/29/2006DE102005061378A1 Vertical double-diffused metal oxide semiconductor device has source region in close proximity to drain region, having heavily doped diffusion layer
06/29/2006DE102004063578B4 Verfahren zur Ausbildung von Dual Gate Elektroden bei Anwendung des Damaszener Gate Prozesses Method for forming dual gate electrodes by applying the Damascus Gate process
06/29/2006DE102004060365A1 Bauelement mit Halbleiterübergang und Verfahren zur Herstellung Component with a semiconductor junction and methods for preparing
06/29/2006DE102004060364A1 Halbleitersubstrat mit Mehrschichtaufbau und Verfahren zur Herstellung Semiconductor substrate having a multilayer structure and methods for preparing
06/29/2006DE102004060363A1 Halbleitersubstrat mit pn-Übergang und Verfahren zur Herstellung Semiconductor substrate having pn junction and methods for preparing
06/29/2006DE102004060210A1 Separation diffusion zone producing method for double-sided blocking power semiconductor component, involves producing trench that extends from side of semiconductor body up to maximum depth of body, and placing doping material into body
06/29/2006DE102004040524B4 Thyristor has direction specific resistance zone between ignition structure and main n emitter so that ignition pulse time is independent of the spreading direction
06/29/2006DE10134484B4 Verfahren zur Verhinderung eines Biegens von Halbleiterschichten und anhand des Verfahrens hergestellte Halbleitervorrichtung A method for preventing bending of the semiconductor layer and produced by the method semiconductor device
06/29/2006DE10031461B4 Hochvolt-Diode High-voltage diode
06/29/2006DE10006257B4 Dünnfilmtransistoren mit organisch-anorganischen Hybridmaterialien als halbleitende Kanäle Thin film transistors with organic-inorganic hybrid materials as semiconducting channels
06/28/2006EP1675184A1 Schottky diode with vertical barrier
06/28/2006EP1675181A1 Methode of making a non-volatile MOS semiconductor memory device
06/28/2006EP1675169A1 Semiconductor substrate, semiconductor device and process for producing semiconductor substrate
06/28/2006EP1674873A2 Sensor
06/28/2006EP1673815A1 Group-iii nitride semiconductor device
06/28/2006EP1673813A2 Fully depleted silicon-on-insulator cmos logic
06/28/2006EP1673811A2 Low noise charge amplification ccd
06/28/2006EP1673810A2 Field effect transistor, particularly vertical field effect transistor, memory cell, and production method
06/28/2006EP1673806A2 Amorphous carbon layer to improve photoresist adhesion
06/28/2006EP1673799A2 Short-channel transistors
06/28/2006EP1673671A2 Power system inhibit method and device and structure therefor
06/28/2006CN2791884Y Single transistor plane random access stroage
06/28/2006CN1795700A Sound detecting mechanism and process for manufacturing the same
06/28/2006CN1795699A Sound detection mechanism
06/28/2006CN1795564A Punch-through diode and method of processing the same
06/28/2006CN1795563A Method for annealing silicon thin films and polycrystalline silicon thin films prepared therefrom
06/28/2006CN1795562A Body-tied soi transistor and method for fabrication thereof
06/28/2006CN1795558A Electronic parts, module, module assembling method, identification method, and environment setting method
06/28/2006CN1795548A Gate electrode for mos transistors
06/28/2006CN1795547A P-channel power mis field effect transistor and switching circuit
06/28/2006CN1795540A Transistor with independant gate structures
06/28/2006CN1795510A Memory with charge storage locations
06/28/2006CN1795484A Pixel circuit, display unit, and pixel circuit drive method
06/28/2006CN1794889A Low temp polycrystal silicone film transistor display panel and manufacturing method thereof
06/28/2006CN1794470A Atomic grade p-n node monocrystal rectifier and its application
06/28/2006CN1794469A Schockley barrier MOS transistor and its manufacturing method