Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2006
06/15/2006US20060124920 Organic el device and organic el panel
06/15/2006US20060124917 Adapting short-wavelength LED's for polychromatic, Broadband, or "white" emission
06/15/2006US20060124916 Self-aligned small contact phase-change memory method and device
06/15/2006US20060124584 sag-resistant nucleus-forming monolithic composite capable of being located within a hollow interior portion of a structural material and being expanded therein
06/15/2006US20060123628 Method of manufacturing a carbon nanotube device
06/15/2006CA2590147A1 Bidirectional field-effect transistor and matrix converter
06/15/2006CA2589539A1 Strained silicon, gate engineered fermi-fets
06/14/2006EP1670064A1 Monolithically intergrated capacitor and method for manufacturing thereof
06/14/2006EP1670063A1 Vertical unipolar device periphery
06/14/2006EP1670052A1 Method of making a voltage withstanding PMOSFET semiconductor structure
06/14/2006EP1670050A1 Basic cell, end section cell, wiring shape, wiring method, shield wiring structure
06/14/2006EP1670045A2 Gate of a memory transistor with a ferroelectric layer and method of manufacturing the same
06/14/2006EP1668716A2 Vertical organic field effect transistor
06/14/2006EP1668706A2 Structure and method for metal replacement gate of high performance device
06/14/2006EP1668705A1 Heterojunction bipolar transistor with tunnelling mis emitter junction
06/14/2006EP1668704A2 Integrated circuit suitable for use in radio receivers
06/14/2006EP1668703A1 Dynamic control of capacitance elements in field effect semiconductor devices
06/14/2006EP1668702A1 Sphere-supported thin film phosphor electroluminescent devices
06/14/2006EP1668691A2 Method for forming a semiconductor device having isolation regions
06/14/2006EP1668673A2 Semiconductor device and making thereof
06/14/2006EP1668672A2 Structure and method of making strained channel cmos transistors having lattice-mismatched epitaxial extension and source and drain regions
06/14/2006EP1590836A4 Mram cells having magnetic write lines with a stable magnetic state at the end regions
06/14/2006EP1240672B1 Production of single-pole components
06/14/2006EP1142011B1 Method of forming devices with graded top oxide and graded drift region
06/14/2006EP1042818B1 Coulomb blockade multilevel memory device and corresponding methods of making and operating the same
06/14/2006EP0966761B1 Vertical igbt with an soi structure
06/14/2006EP0871979B1 Method of manufacturing a silicon photovoltaic cell and cell obtained by this method
06/14/2006DE19983159B4 Verfahren zur Herstellung eines Funktionselementes zur Verwendung in einer elektrischen, elektronischen oder optischen Vorrichtung Process for the preparation of a functional element for use in an electric, electronic or optical device
06/14/2006DE112004000060T5 Schaltelement, Verfahren zum Ansteuern des Schaltelements, überschreibbare integrierte Logikschaltung und Speicherelement Switching element, method of driving the switching element, rewritable logic integrated circuit memory element, and
06/14/2006DE10355588B4 MOS-Transistoreinrichtung MOS transistor means
06/14/2006DE10255849B4 Verbesserte Drain/Source-Erweiterungsstruktur eines Feldeffekttransistors mit dotierten Seitenwandabstandselementen mit hoher Permittivität und Verfahren zu deren Herstellung Improved drain / source extension structure of a field effect transistor having the doped sidewall spacers with high permittivity and processes for their preparation
06/14/2006DE10231965B4 Verfahren zur Herstellung einer T-Gate-Struktur sowie eines zugehörigen Feldeffekttransistors A method for preparing a T-gate structure as well as of an associated field effect transistor
06/14/2006DE102005029313A1 Manufacture of semiconductor device by forming polysilicon layer on buried oxide film, and implanting impurity into second silicon epitaxial layer and polysilicon layer to form source/drain region
06/14/2006DE102005003127B3 Lateral semiconductor component, such as IGBT-transistors and MOSFET and JFET, has drift regions of drift zone extending in lateral direction
06/14/2006DE102004061327A1 Vertikaler Bipolartransistor A vertical bipolar transistor
06/14/2006DE102004052678B3 Leistungs- Trenchtransistor Performance trench transistor
06/14/2006DE102004021393B4 Feldeffekt-Leistungstransistor Field effect power transistor
06/14/2006DE102004015921B4 Semiconductor component to be controlled by field effect has connection zones for conductivity modes with electrodes and compensating zones
06/14/2006DE102004004846B4 Verfahren zum Abscheiden einer Schicht aus einem Material auf einem Substrat A method of depositing a layer of a material on a substrate
06/14/2006CN2788356Y MOS field effect transistor
06/14/2006CN1788356A Trench storage capacitor and method for fabricating it
06/14/2006CN1788355A Field effect transistor and display using same
06/14/2006CN1788354A Semiconductor device and its manufacturing method
06/14/2006CN1788353A Semiconductor device with a field shaping region
06/14/2006CN1788351A Integrated circuit arrangement comprising isolating trenches and a field effect transistor, and associated production method
06/14/2006CN1788349A ESD protection device for semiconductor products
06/14/2006CN1788335A Silicon carbide semiconductor device and process for producing the same
06/14/2006CN1788322A Aluminum alloy wiring material having high resistance to heat and target material
06/14/2006CN1788297A Active matrix panel inspection device, inspection method, and active matrix OLED panel manufacturing method
06/14/2006CN1787231A Isolation diode for back-up electric source
06/14/2006CN1787230A Semiconductor device including field-effect transistor
06/14/2006CN1787229A Crystal tube structure with high electronic shifting ratio of gallium nitrate base of double heterogenous structure and mfg. method thereof
06/14/2006CN1787228A 半导体器件 Semiconductor devices
06/14/2006CN1787227A Method and system for forming active device thread electrical connections
06/14/2006CN1787218A Nonvolatile memory device and method of manufacturing the same
06/14/2006CN1787177A Semiconductor device and method for fabricating the same
06/14/2006CN1786801A Thin film transistor array panel and method for manufacturing the same
06/14/2006CN1786800A Film crystal tube printing mfg. method
06/14/2006CN1786798A 液晶显示器 LCD Monitor
06/14/2006CN1259731C Method for producing low-temperature polysilicon thin film transistor
06/14/2006CN1259730C Semiconductor device and producing method thereof
06/14/2006CN1259729C Semiconductor device and manufacture method thereof
06/14/2006CN1259728C Semiconductor device and its mfg. method
06/14/2006CN1259727C Semiconductor device and apparatus for communication system
06/14/2006CN1259726C Charge transferring device and charge transferring method which can reduce floating diffusion capacitance
06/14/2006CN1259724C Substrate device and mfg method thereof, electrooptical device and electronic apparatus
06/14/2006CN1259718C Electrooptical device and semiconductor device
06/14/2006CN1259699C Nitrogen gate containing silicon oxide layer structure of semiconductor device and preparation technique
06/14/2006CN1259698C Semiconductor device and method for producing semiconductor device
06/14/2006CN1259694C Production method for semiconductor substrate, semiconductor substrate and semiconductor device
06/14/2006CN1259693C Method for preparing low temperature polysilicon thin film and transistor of low temperature polysilicon thin film
06/14/2006CN1259692C Method for mfg. insulating layer coating substrate for strain semiconductor
06/13/2006USRE39124 Integrated circuit having capacitive elements
06/13/2006US7062425 Method and apparatus for automated enumeration, simulation, identification and/or irradiation of device attributes
06/13/2006US7061808 Semiconductor memory device, driving method thereof, and portable electronic apparatus
06/13/2006US7061802 Semiconductor integrated circuit device
06/13/2006US7061798 Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
06/13/2006US7061735 Semiconductor device
06/13/2006US7061565 Array substrate having double-layered metal patterns and method of fabricating the same
06/13/2006US7061554 Liquid crystal display
06/13/2006US7061270 Semiconductor integrated circuit, electronic equipment, and transistor back-gate voltage control method
06/13/2006US7061217 Integrated power switching circuit
06/13/2006US7061186 EL display device and electronic apparatus
06/13/2006US7061128 Semiconductor device and manufacturing method of the same
06/13/2006US7061124 Solder masks including dams for at least partially surrounding terminals of a carrier substrate and recessed areas positioned adjacent to the dams, and carrier substrates including such solder masks
06/13/2006US7061122 Components, methods and assemblies for multi-chip packages
06/13/2006US7061120 Stackable semiconductor package having semiconductor chip within central through hole of substrate
06/13/2006US7061119 Tape attachment chip-on-board assemblies
06/13/2006US7061117 Bump layout on silicon chip
06/13/2006US7061116 Arrangement of vias in a substrate to support a ball grid array
06/13/2006US7061115 Interconnect line selectively isolated from an underlying contact plug
06/13/2006US7061110 Ohmic contact to semiconductor devices and method of manufacturing the same
06/13/2006US7061106 Structure of image sensor module and a method for manufacturing of wafer level package
06/13/2006US7061101 Carrier module
06/13/2006US7061096 Multi-surface IC packaging structures and methods for their manufacture
06/13/2006US7061093 Semiconductor device and voltage regulator
06/13/2006US7061083 Semiconductor devices
06/13/2006US7061073 Diamondoid-containing capacitors
06/13/2006US7061072 Integrated circuit inductors using driven shields
06/13/2006US7061071 Non-volatile resistance variable devices and method of forming same, analog memory devices and method of forming same, programmable memory cell and method of forming same, and method of structurally changing a non-volatile device