Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2006
06/21/2006CN1790740A Semiconductor device and method for forming grid structure
06/21/2006CN1790739A Lowered source/drain transistors and method for producing the same
06/21/2006CN1790738A Sidewall semiconductor transistors and method for producing the same
06/21/2006CN1790737A IGBT and method for making same
06/21/2006CN1790736A Semiconductor device
06/21/2006CN1790735A Silicon carbide semiconductor device and method for manufacturing the same
06/21/2006CN1790734A Semiconductor device and methods of producing the same
06/21/2006CN1790723A Thin-film transistor display panel, and method of manufacturing the same
06/21/2006CN1790718A Non-volatile semiconductor memory device with alternative metal gate material
06/21/2006CN1790717A Non-volatile memory cell
06/21/2006CN1790715A Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification
06/21/2006CN1790710A Electronic device with light nonemission type display
06/21/2006CN1790698A Semiconductor device, semiconductor device design method, semiconductor device design method recording medium, and semiconductor device design support system
06/21/2006CN1790678A Flash memory storing element and method for making same
06/21/2006CN1790671A Method for preparing semiconductor device
06/21/2006CN1790643A Device comprising doped nano-component and method of forming the device
06/21/2006CN1790640A Non-volatile memory device having improved erase efficiency and method of manufacturing the same
06/21/2006CN1790639A Method of fabricating a semiconductor structure
06/21/2006CN1790638A MOSFET device with localized stressor
06/21/2006CN1790636A Semiconductor article and method for manufacturing the semiconductor article
06/21/2006CN1790619A Insulating layer coating substrate for strain semiconductor and its making process
06/21/2006CN1790164A Thin film transistor and method for manufacturing the same
06/21/2006CN1790162A Method of forming pattern having step difference and method of making thin film transistor and liquid crystal display using the same
06/21/2006CN1790160A Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask
06/21/2006CN1790145A Thin film transistor array panel and liquid crystal display including the panel
06/21/2006CN1790143A Display device and method for manufacturing the same
06/21/2006CN1790142A Method of manufacturing liquid crystal display and liquid crystal display manufactured by the method
06/21/2006CN1790141A Display device and thin film transistor array panel for display device and manufacturing method thereof
06/21/2006CN1790140A Thin film transistor array panel and repairing method therefor
06/21/2006CN1790139A Thin film transistor panel and liquid crystal display using the same
06/21/2006CN1790126A Glass substrate, liquid crystal display device and method for manufacturing glass substrate
06/21/2006CN1790121A Semi-transmissive semi-reflective liquid crystal display device
06/21/2006CN1790116A Transflective liquid crystal display and manufacturing method thereof
06/21/2006CN1790111A Circuit for improving repair wire signal attenuation by using non-inverting amplifier
06/21/2006CN1790029A 加速度传感器 Acceleration sensor
06/21/2006CN1260888C Level drift circuit and active matrix driver
06/21/2006CN1260828C Semiconductor device and manufacture method thereof
06/21/2006CN1260827C Group III nitride transistor and method for producing the same
06/21/2006CN1260826C 化合物半导体装置 The compound semiconductor device
06/21/2006CN1260825C Protector with silicon controlled rectifier
06/21/2006CN1260817C Semiconductor device containing insulated grid field transistor, and its mfg. method
06/21/2006CN1260804C Semiconductor crystal plate and its manufacturing method and semiconductor device and its manufacturing method
06/21/2006CN1260788C Method for forming high voltage junction in semiconductor device
06/21/2006CN1260786C Method and apparatus set for forming cobalt silicide
06/21/2006CN1260776C Semiconductor substrate, semiconductor element and its manufacturing method
06/21/2006CN1260597C Reflective liquid crystal display apparatus and its manufacturing method
06/21/2006CN1260404C Method for crystallizing amorphous silicon using nanoparticles
06/21/2006CN1260389C Hafnium silicide target for gate oxide film formation and its production method
06/20/2006US7064982 Semiconductor memory device and portable electronic apparatus
06/20/2006US7064978 Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
06/20/2006US7064976 Method of operating a stacked spin based memory
06/20/2006US7064453 Semiconductor memory device including a gate electrode with a recess
06/20/2006US7064451 Area array semiconductor device and electronic circuit board utilizing the same
06/20/2006US7064449 Bonding pad and chip structure
06/20/2006US7064447 Bond pad structure comprising multiple bond pads with metal overlap
06/20/2006US7064446 Under bump metallization layer to enable use of high tin content solder bumps
06/20/2006US7064445 Wafer level testing and bumping process
06/20/2006US7064443 Semiconductor device having a plurality of stacked semiconductor chips with positions of chip-selecting terminals being different from each other
06/20/2006US7064442 Integrated circuit package device
06/20/2006US7064441 Semiconductor device and method of manufacturing the same
06/20/2006US7064439 Integrated electrical circuit and method for fabricating it
06/20/2006US7064437 Semiconductor device having aluminum conductors
06/20/2006US7064433 Multiple-ball wire bonds
06/20/2006US7064431 Electronic assembly having select spacing of rows and columns of contacts to allow for routing of traces to the contacts
06/20/2006US7064418 Method and structure of diode
06/20/2006US7064417 Semiconductor device including a bipolar transistor
06/20/2006US7064416 Semiconductor device and method having multiple subcollectors formed on a common wafer
06/20/2006US7064414 Heater for annealing trapped charge in a semiconductor device
06/20/2006US7064413 Fin-type resistors
06/20/2006US7064411 Spiral inductor and transformer
06/20/2006US7064410 MOS antifuse with low post-program resistance
06/20/2006US7064409 Structure and programming of laser fuse
06/20/2006US7064408 Schottky barrier diode and method of making the same
06/20/2006US7064407 JFET controlled schottky barrier diode
06/20/2006US7064402 Magnetic random access memory
06/20/2006US7064401 Thin film piezoelectric element, method of manufacturing the same, and actuator
06/20/2006US7064400 Semiconductor device and process for producing the same
06/20/2006US7064399 Advanced CMOS using super steep retrograde wells
06/20/2006US7064398 Semiconductor memory device
06/20/2006US7064397 Silicon controlled rectifier structure with improved punch through resistance
06/20/2006US7064396 Integrated circuit with multiple spacer insulating region widths
06/20/2006US7064395 Semiconductor device and method for fabricating the same
06/20/2006US7064394 Nonvolatile semiconductor memory device
06/20/2006US7064393 Electrostatic discharge protection structures having high holding current for latch-up immunity
06/20/2006US7064390 Metal gate engineering for surface p-channel devices
06/20/2006US7064389 Semiconductor memory device having full depletive type logic transistors and partial depletion type memory transistors
06/20/2006US7064388 Semiconductor device and method for manufacturing the same
06/20/2006US7064386 Thin film transistor and fabricating method thereof
06/20/2006US7064385 DMOS-transistor with lateral dopant gradient in drift region and method of producing the same
06/20/2006US7064384 Semiconductor device
06/20/2006US7064383 Non-volatile memory device
06/20/2006US7064382 Nonvolatile memory and nonvolatile memory manufacturing method
06/20/2006US7064381 Non-volatile memory device having upper and lower trenches and method for fabricating the same
06/20/2006US7064380 Semiconductor device and a method of manufacturing the same
06/20/2006US7064379 Nonvolatile semiconductor memory device
06/20/2006US7064378 Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same
06/20/2006US7064377 Flash memory cell with buried floating gate and method for operating such a flash memory cell
06/20/2006US7064376 High performance embedded semiconductor memory devices with multiple dimension first-level bit-lines
06/20/2006US7064375 Semiconductor memory device having a gate electrode and a diffusion layer and a manufacturing method thereof
06/20/2006US7064372 Large-area nanoenabled macroelectronic substrates and uses therefor