Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2006
06/27/2006US7067404 Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization
06/27/2006US7067403 Method for manufacturing a semiconductor device that includes adding noble gas to a semiconductor film and then irradiating the semiconductor film with laser light in the presence of a magnetic field
06/27/2006US7067392 Semiconductor apparatus and fabrication method of the same
06/27/2006US7067391 Method to form a metal silicide gate device
06/27/2006US7067389 Method for manufacturing semiconductor device
06/27/2006US7067384 Method of forming a varactor with an increased linear tuning range
06/27/2006US7067382 Semiconductor device and method for fabricating the same
06/27/2006US7067380 Semiconductor device and manufacturing method therefor
06/27/2006US7067379 Silicide gate transistors and method of manufacture
06/27/2006US7067376 High voltage power MOSFET having low on-resistance
06/27/2006US7067373 Semiconductor integrated circuit device and a method of manufacturing the same
06/27/2006US7067371 Silicon-on-insulator (SOI) integrated circuit (IC) chip with the silicon layers consisting of regions of different thickness
06/27/2006US7067369 Flash memory cell transistor and method for fabricating the same
06/27/2006US7067366 Method of making field effect transistors having self-aligned source and drain regions using independently controlled spacer widths
06/27/2006US7067363 Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances and high scaling down density
06/27/2006US7067361 Methods of fabricating silicon carbide metal-semiconductor field effect transistors
06/27/2006US7067360 Method of fabricating a fin field effect transistor
06/27/2006US7067354 Electrical die contact structure and fabrication method
06/27/2006US7067351 Selectively-etched nanochannel electrophoretic and electrochemical devices
06/27/2006US7067346 Titanium carboxylate films for use in semiconductor processing
06/27/2006US7067344 Method of manufacturing an external force detection sensor
06/27/2006US7067343 Ion Sensitive Field Effect Transistors; sol-gel technology to form a tin oxide detection film on a substrate to serve as an extended gate; coating an insulating layer is on the transistor's surface; electrically connecting an exposed end of the film and wire to the metal oxide semiconductor (MOS)
06/27/2006US7067341 Single electron transistor manufacturing method by electro-migration of metallic nanoclusters
06/27/2006US7067337 Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device
06/27/2006US7067176 Forming an insulator by fabricating a nitrided oxide layer on a layer of silicon carbide; and annealing the nitrided oxide layer in an environment containing hydrogen.
06/27/2006US7066390 Method for manufacturing semiconductor device
06/22/2006WO2006066265A2 Drain extended pmos transistors and methods for making the same
06/22/2006WO2006066194A2 Strained nmos transistor featuring deep carbon doped regions and raised donor doped source and drain
06/22/2006WO2006065506A1 In-line fabrication of curved surface transistors
06/22/2006WO2006064887A1 Display control substrate, manufacturing method thereof, liquid crystal display panel, electronic information device
06/22/2006WO2006064859A1 Semiconductor device and manufacturing method thereof
06/22/2006WO2006064776A1 Method for fabricating organic thin film transistor
06/22/2006WO2006064640A1 Method of selectively disposing ferritin
06/22/2006WO2006064606A1 Semiconductor device and manufacturing method thereof
06/22/2006WO2006064394A1 Borderless (etching stop) layer stack for non-volatile memory applications
06/22/2006WO2006064290A1 Bipolar transistor and method of making such a transistor
06/22/2006WO2006064081A1 Semiconductor substrate, semiconductor device and method of manufacturing a semiconductor substrate
06/22/2006WO2006063958A2 Method for producing an electrode
06/22/2006WO2006063614A1 Power field effect transistor device and method of manufacture thereof
06/22/2006WO2006063478A1 Power semiconductor
06/22/2006WO2006046177A3 Semiconductor device with tunable energy band gap
06/22/2006WO2006034854A3 Semiconductor memory device having charge-trapping memory cells
06/22/2006WO2006033794A3 Transistor with tunneling dust electrode
06/22/2006WO2006023018A3 Magnetic tunnel junction element structures and methods for fabricating the same
06/22/2006WO2006011110A3 Insulated gate field effect transistors
06/22/2006WO2006008703A3 Nanoscale fet
06/22/2006WO2005045892A9 Confined spacers for double gate transistor semiconductor fabrication process
06/22/2006WO2005019986A3 Enhanced parimutuel wagering
06/22/2006US20060134929 Heating treatment device, heating treatment method and fabrication method of semiconductor device
06/22/2006US20060134913 Method for fabricating semiconductor device having stacked-gate structure
06/22/2006US20060134877 Method for fabricating a buried conductive connection to a trench capacitor and a memory cell with such a connection
06/22/2006US20060134868 Double gate field effect transistor and method of manufacturing the same
06/22/2006US20060134853 Standard cell back bias architecture
06/22/2006US20060134848 Method of manufacturing a semiconductor device with mos transistors comprising gate electrodes formed in a packet of metal layers deposited upon one another
06/22/2006US20060134847 Method of manufacturing a SiC vertical MOSFET
06/22/2006US20060134846 Method of fabricating a semiconductor structure
06/22/2006US20060134843 MOS transistor on an SOI substrate with a body contact and a gate insulating film with variable thickness
06/22/2006US20060134841 Method of forming pattern having step difference and method of making thin film transistor and liquid crystal display using the same
06/22/2006US20060134840 Electro-optical device and semiconductor circuit
06/22/2006US20060134824 P-type OFET with fluorinated channels
06/22/2006US20060132685 Reflection-transmission type liquid crystal display device and method for manufacturing the same
06/22/2006US20060132680 Liquid crystal display device and method of making same
06/22/2006US20060131755 Method of making circuitized substrate
06/22/2006US20060131731 Midair semiconductor device and manufacturing method of the same
06/22/2006US20060131714 Signal conduction for doped semiconductors
06/22/2006US20060131702 Novel transmission lines for CMOS integrated circuits
06/22/2006US20060131699 Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a buried insulating layer
06/22/2006US20060131697 Semiconductor methods and structures
06/22/2006US20060131696 Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them
06/22/2006US20060131695 Fabricating arrays of metallic nanostructures
06/22/2006US20060131694 Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production method
06/22/2006US20060131691 Electronic device, assembly and methods of manufacturing an electronic device
06/22/2006US20060131690 Fuse box of semiconductor device and fabrication method thereof
06/22/2006US20060131689 Semiconductor device and fabrication method thereof
06/22/2006US20060131688 Trench isolation structure, semiconductor assembly comprising such a trench isolation, and method for forming such a trench isolation
06/22/2006US20060131687 Method and structure for implanting bonded substrates for electrical conductivity
06/22/2006US20060131686 LOCOS-based junction-pinched schottky rectifier and its manufacturing methods
06/22/2006US20060131685 Semiconductor device and method of fabricating the same
06/22/2006US20060131680 Piezoelectric element and method for manufacturing
06/22/2006US20060131679 Systems and methods for electrical contacts to arrays of vertically aligned nanorods
06/22/2006US20060131678 Method of manufacturing surface acoustic wave device and surface acoustic wave device
06/22/2006US20060131677 Systems and methods for electrically coupling wires and conductors
06/22/2006US20060131676 Semiconductor device and manufacturing method thereof
06/22/2006US20060131675 Semiconductor device and method for high-K gate dielectrics
06/22/2006US20060131674 Insulating film and electronic device
06/22/2006US20060131673 Insulating film and electronic device
06/22/2006US20060131672 Nitrogen treatment to improve high-k gate dielectrics
06/22/2006US20060131671 Electronic device including dielectric layer, and a process for forming the electronic device
06/22/2006US20060131670 Semiconductor device and production method therefor
06/22/2006US20060131668 Methods and systems for improved current sharing between parallel power semiconductors in power converters
06/22/2006US20060131667 SRAM cell
06/22/2006US20060131665 Method for forming an integrated circuit
06/22/2006US20060131664 N-type schottky barrier tunnel transistor and manufacturing method thereof
06/22/2006US20060131663 Semiconductor device and method for manufacturing the same
06/22/2006US20060131661 Semiconductor device full-wave rectifier circuit and half-wave rectifier circuit
06/22/2006US20060131660 Semiconductor storage device and semiconductor integrated circuit
06/22/2006US20060131659 CMOS transistor structure including film having reduced stress by exposure to atomic oxygen
06/22/2006US20060131658 MOS device, CMOS device, and fabricating method thereof
06/22/2006US20060131657 Semiconductor integrated circuit device and method for the same
06/22/2006US20060131656 CMOS semiconductor devices having elevated source and drain regions and methods of fabricating the same