Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2006
07/20/2006US20060157695 Electronic devices formed on substrates and their fabrication methods
07/20/2006US20060157694 Metal oxide alloy layer, method of forming the metal oxide alloy layer, and methods of manufacturing a gate structure and a capacitor including the metal oxide alloy layer
07/20/2006US20060157693 For use as semiconductors or charge transport materials in optical, electro-optical or electronic devices (transistors, integrated circuits, photovoltaics); liquid crystal polymers; anisotropic polymer films; security markings
07/20/2006US20060157692 Organic transistor and manufacturing method thereof
07/20/2006US20060157691 Memory device including dendrimer
07/20/2006US20060157690 Organic insulator, organic thin film transistor array panel including organic insulator, and manufacturing method therefor
07/20/2006US20060157689 Forming a carbon layer between phase change layers of a phase change memory
07/20/2006US20060157688 Methods of forming semiconductor constructions and integrated circuits
07/20/2006US20060157687 Non-planar MOS structure with a strained channel region
07/20/2006US20060157685 Semiconductor device method of manfacturing a quantum well structure and a semiconductor device comprising such a quantum well structure
07/20/2006US20060157684 Thin film multilayer with nanolayers addressable from the macroscale
07/20/2006US20060157682 Write-once nonvolatile phase change memory array
07/20/2006US20060157681 Horizontal chalcogenide element defined by a pad for use in solid-state memories
07/20/2006US20060157680 Semiconductor integrated circuit device
07/20/2006US20060157679 Structure and method for biasing phase change memory array for reliable writing
07/20/2006US20060156817 Acceleration sensor with redundant contact holes
07/20/2006US20060156798 Carbon nanotube excitation system
07/20/2006DE112004001489T5 Feldeffekttransistor mit einer erhöhten Ladungs-Trägerbeweglichkeit Field effect transistor having an increased charge carrier mobility
07/20/2006DE10254160B4 Transistorarray und damit hergestellte Halbleiterspeicheranordnung Transistor array and thus produced semiconductor memory device
07/20/2006DE10227854B4 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation
07/20/2006DE102005035732A1 Leistungs-Halbleitervorrichtung Power semiconductor device
07/20/2006DE102005001449B3 Verfahren zum Erzeugen eines vorgegebenen Innendrucks in einem Hohlraum eines Halbleiterbauelements A method of creating a predefined internal pressure within a cavity of a semiconductor device
07/20/2006DE102005001151A1 Component arrangement for serial connection with high voltage application has semiconductor chip, load connections, and control port whereby first and second load connection are arranged on opposite sides of semiconductor chip
07/20/2006DE10065525B4 Verfahren zur Herstellung einer Halbleiteranordnung mit einem PN-Übergang A method of manufacturing a semiconductor device having a PN junction
07/20/2006CA2567156A1 Biofabrication of transistors including field effect transistors
07/19/2006EP1681725A1 Unipolar vertical device having a low leakage current
07/19/2006EP1680816A1 Power surface mount light emitting die package
07/19/2006EP1680813A2 Probe testing structure
07/19/2006EP1680807A1 A device and method for inhibiting oxidation of contact plugs in ferroelectric capacitor devices
07/19/2006EP1680804A2 METHOD AND STRUCTURE FOR FORMING STRAINED Si FOR CMOS DEVICES
07/19/2006EP1680803A2 Method for integrating pre-fabricated chip structures into functional electronic systems
07/19/2006EP1680787A2 Nrom flash memory with self-aligned structural charge separation
07/19/2006EP1405341B1 Bipolar transistor with raised extrinsic base fabricated in an integrated bicmos circuit
07/19/2006CN1806385A Low-noise amplifier
07/19/2006CN1806347A Led lamp
07/19/2006CN1806344A Contacts fabric using heterostructure of metal/semiconductor nanorods and fabrication method thereof
07/19/2006CN1806342A Prevention of a parasitic channel in an integrated SOI process
07/19/2006CN1806341A Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof
07/19/2006CN1806340A Finfet with dual silicon gate layer for chemical mechanical polishing planarization
07/19/2006CN1806339A A novel packaging method for microstructure and semiconductor devices
07/19/2006CN1806338A Feedback and coupling structures and methods
07/19/2006CN1806337A Power semiconductor device and method therefor
07/19/2006CN1806336A Optical device for LED-based light-bulb substitute
07/19/2006CN1806334A Non-volatile memory device
07/19/2006CN1806333A Mixer circuit
07/19/2006CN1806332A DC amplifier and semiconductor integrated circuit therefor
07/19/2006CN1806331A Switch capacitor circuit and semiconductor integrated circuit thereof
07/19/2006CN1806330A Limiter circuit and semiconductor integrated circuit thereof
07/19/2006CN1806322A Semiconductor device, its manufacturing method, and electronic device
07/19/2006CN1806321A Plasma spraying for joining silicon parts
07/19/2006CN1806320A Mirror image memory cell transistor pairs featuring poly floating spacers
07/19/2006CN1806319A Mis transistor and cmos transistor
07/19/2006CN1806318A Multi-step chemical mechanical polishing of a gate area in a finfet
07/19/2006CN1806313A Silicon epitaxial wafer manufacturing method and silicon epitaxial wafer
07/19/2006CN1805155A Thick film force sensitive slurry and its preparation method
07/19/2006CN1805154A Substrate including a deformation preventing layer
07/19/2006CN1805153A Semiconductor device and a method of manufacturing thereof
07/19/2006CN1805152A Field effect transistor (FET) having wire channels and method of fabricating the same
07/19/2006CN1805151A Mosfet device with localized stressor
07/19/2006CN1805150A Power semiconductor device
07/19/2006CN1805147A Thin film transistor array panel
07/19/2006CN1805144A Semiconductor integrated circuit and fabrication process thereof
07/19/2006CN1805140A Protection circuit, semiconductor component, integrate circuit and memory component
07/19/2006CN1805130A Encapsulation casing, substrate, and sealing structure for moisture-sensitive electronic components
07/19/2006CN1805129A Method of protecting cmos from electrostatic discharge effect
07/19/2006CN1805050A Semiconductor memory device using only single-channel transistor to apply voltage to selected word line
07/19/2006CN1804709A Liquid crystal display device and fabrication method thereof
07/19/2006CN1265468C Optimized reachthrough implant for simultaneously forming an MOS capacitor
07/19/2006CN1265467C 半导体装置 Semiconductor device
07/19/2006CN1265466C Longitudinal transistor, memory device and longitudinal transistor making process
07/19/2006CN1265465C 半导体器件 Semiconductor devices
07/19/2006CN1265460C Memory device and method for driving the memory device
07/19/2006CN1265459C Low consumption power metal-insulator-semiconductor semiconductor device
07/19/2006CN1265448C Substrate for element forming and its manufacturing method and semiconductor device
07/19/2006CN1265423C Semiconductor device and producing method thereof
07/19/2006CN1265233C Liquid crystal display device and its producing method
07/18/2006US7079881 Substrate sensor
07/18/2006US7079776 Optical signal transmission board and apparatus
07/18/2006US7079437 Nonvolatile semiconductor memory device having configuration of NAND strings with dummy memory cells adjacent to select transistors
07/18/2006US7079421 Method of improving data retention ability of semiconductor memory device, and semiconductor memory device
07/18/2006US7079418 Semiconductor storage apparatus and microcomputer having the same
07/18/2006US7079199 Liquid crystal display panel
07/18/2006US7079183 Charge transfer device for increasing data rate and reducing power consumption
07/18/2006US7079121 Driving circuit of liquid crystal display device
07/18/2006US7078917 Electrostatic capacitance detecting device
07/18/2006US7078855 Dielectric light device
07/18/2006US7078821 Ball film for integrated circuit fabrication and testing
07/18/2006US7078820 Semiconductor apparatus and process of production thereof
07/18/2006US7078819 Microelectronic packages with elongated solder interconnections
07/18/2006US7078818 Semiconductor device
07/18/2006US7078817 Multiple copper vias for integrated circuit metallization
07/18/2006US7078816 Circuitized substrate
07/18/2006US7078814 Method of forming a semiconductor device having air gaps and the structure so formed
07/18/2006US7078813 Semiconductor device with double barrier film
07/18/2006US7078812 Routing differential signal lines in a substrate
07/18/2006US7078810 Semiconductor device and fabrication method thereof
07/18/2006US7078808 Double density method for wirebond interconnect
07/18/2006US7078805 Semiconductor wafer, semiconductor chip and dicing method of a semiconductor wafer
07/18/2006US7078804 Micro-electro-mechanical system (MEMS) package with side sealing member and method of manufacturing the same
07/18/2006US7078787 Design and operation of gate-enhanced junction varactor with gradual capacitance variation