Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2006
07/26/2006CN1808726A Semiconductor device and method for fabricating the same
07/26/2006CN1808725A Side diffused MOS field-effect transistor and its manufacturing method
07/26/2006CN1808723A 电光装置和电子装置 Electro-optical devices and electronic devices
07/26/2006CN1808721A Solid-state imaging device and manufacturing method thereof
07/26/2006CN1808718A Storage unit and operation methods for array of electric charge plunged layer
07/26/2006CN1808700A Semiconductor device and method for fabricating the same
07/26/2006CN1808623A Write operation circuit and method applied in nonvolatile separate gate memory
07/26/2006CN1808266A Optical mask and manufacturing method of thin film transistor array panel using the optical mask
07/26/2006CN1808251A Thin film transistor array panel for liquid crystal display and liquid crystal display
07/26/2006CN1808249A Liquid crystal display device
07/26/2006CN1808122A Acceleration sensor with redundant contact holes
07/26/2006CN1266774C Electronic component and method for production thereof
07/26/2006CN1266769C 半导体器件及其制作方法 Semiconductor device and manufacturing method thereof
07/26/2006CN1266767C Semiconductor device and method for manufacturing semiconductor device
07/26/2006CN1266762C Transistor forming method
07/26/2006CN1266750C Field effect transistor formed on insulative substrate and integrated circuit
07/26/2006CN1266742C High voltage, high temp capacitor structures and methods of fabricating same
07/26/2006CN1266733C Field emission display device
07/26/2006CN1266659C Flat panel display with improved white balance
07/26/2006CN1266522C Liquid crystal display device
07/26/2006CN1266519C Semiconductor display device and electronic device with the semiconductor display device
07/25/2006US7082057 Semiconductor memory device
07/25/2006US7082051 Method and driver for programming phase change memory cell
07/25/2006US7081939 Display device having a black matrix overlapping a gate control signal line formed on substrate
07/25/2006US7081938 Electro-optical device and method for manufacturing the same
07/25/2006US7081931 Liquid crystal display having aluminum wiring
07/25/2006US7081930 Process for fabrication of a liquid crystal display with thin film transistor array free from short-circuit
07/25/2006US7081799 Bipolar transistor, oscillation circuit, and voltage controlled oscillator
07/25/2006US7081680 Self-aligned corrosion stop for copper C4 and wirebond
07/25/2006US7081679 Structure and method for reinforcing a bond pad on a chip
07/25/2006US7081677 Thermoelectric module
07/25/2006US7081676 Structure for controlling the interface roughness of cobalt disilicide
07/25/2006US7081664 Doped semiconductor powder and preparation thereof
07/25/2006US7081663 Gate-enhanced junction varactor with gradual capacitance variation
07/25/2006US7081662 ESD protection device for high voltage
07/25/2006US7081659 Semiconductor apparatus having a built-in electric coil and a method of making the semiconductor apparatus
07/25/2006US7081658 Techniques for reducing Neel coupling in toggle switching semiconductor devices
07/25/2006US7081657 MEMS and method of manufacturing MEMS
07/25/2006US7081656 CMOS constructions
07/25/2006US7081655 Formation of abrupt junctions in devices by using silicide growth dopant snowplow effect
07/25/2006US7081653 Semiconductor memory device having mis-type transistors
07/25/2006US7081652 Semiconductor device having a side wall insulating film and a manufacturing method thereof
07/25/2006US7081651 Non-volatile memory device with protruding charge storage layer and method of fabricating the same
07/25/2006US7081650 Interposer with signal and power supply through vias
07/25/2006US7081649 Semiconductor integrated circuitry and method for manufacturing the circuitry
07/25/2006US7081648 Lossless co-planar wave guide in CMOS process
07/25/2006US7081646 Semiconductor device and method of fabricating same
07/25/2006US7081645 SMD(surface mount device)-type light emitting diode with high heat dissipation efficiency and high power
07/25/2006US7081643 Gain-clamped semiconductor optical amplifier having horizontal lasing structure and manufacturing method thereof
07/25/2006US7081642 Active matrix substrate display device
07/25/2006US7081641 Semiconductor device and manufacturing method thereof
07/25/2006US7081640 Organic semiconductor element having high insulation strength and fabrication method thereof
07/25/2006US7081419 Gate dielectric structure for reducing boron penetration and current leakage
07/25/2006US7081416 Methods of forming field effect transistor gates
07/25/2006US7081409 Methods of producing integrated circuit devices utilizing tantalum amine derivatives
07/25/2006US7081395 Silicon strain engineering accomplished via use of specific shallow trench isolation fill materials
07/25/2006US7081394 Device for electrostatic discharge protection and method of manufacturing the same
07/25/2006US7081393 Reduced dielectric constant spacer materials integration for high speed logic gates
07/25/2006US7081392 Method for fabricating a gate structure of a FET and gate structure of a FET
07/25/2006US7081388 Self aligned contact structure for trench device
07/25/2006US7081387 Damascene gate multi-mesa MOSFET
07/25/2006US7081386 Semiconductor device and method of manufactuing the same
07/25/2006US7081385 Nanotube semiconductor devices and methods for making the same
07/25/2006US7081381 Flash memory cell and the method of making separate sidewall oxidation
07/25/2006US7081378 Horizontal TRAM and method for the fabrication thereof
07/25/2006US7081210 Organic semiconductor composition
07/25/2006US7080560 Semiconductor pressure sensor
07/24/2006WO2006077674A1 Junction field-effect transistor
07/24/2006CA2547692A1 Junction field-effect transistor
07/20/2006WO2006076625A1 Memory device having trapezoidal bitlines and method of fabricating same
07/20/2006WO2006076535A1 Enhanced pfet using shear stress
07/20/2006WO2006076378A1 Programmable matrix array with chalcogenide material
07/20/2006WO2006076373A1 Self-forming metal silicide gate for cmos devices
07/20/2006WO2006076298A2 Trench schottky barrier diode with differential oxide thickness
07/20/2006WO2006076087A2 METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS
07/20/2006WO2006076086A2 Tic mos devices on high-k-dielectric gate stacks
07/20/2006WO2006076036A2 Nanostructure assemblies, methods and devices thereof
07/20/2006WO2006076027A2 Biofabrication of transistors including field effect transistors
07/20/2006WO2006075731A1 Solid electrolytic switching element, method for manufacturing such solid electrolytic switching element and integrated circuit
07/20/2006WO2006075717A1 Torsion resonator and filter using this
07/20/2006WO2006075569A1 Semiconductor thin film manufacturing method and semiconductor thin film manufacturing apparatus
07/20/2006WO2006075568A1 Production method and production device for polycrystalline semiconductor thin film
07/20/2006WO2006075525A1 Light exposure apparatus and manufacturing method of semiconductor device using the same
07/20/2006WO2006075469A1 Capacitive semiconductor physical quantity sensor and method for manufacturing the same
07/20/2006WO2006075444A1 Semiconductor device manufacturing method and semiconductor device
07/20/2006WO2006075197A1 Flip-chip semiconductor packages and methods for their production
07/20/2006WO2006060590A3 Reduced circuit area and improved gate length control in semiconductor device
07/20/2006WO2006060208A3 Double hbt structure
07/20/2006WO2006042194A3 Variable capacitor single-electron device
07/20/2006WO2005091345A8 Carbon nanotube-containing metal thin film
07/20/2006US20060160375 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry, methods of forming trench isolation in the fabrication of integrated circuitry, Method of depositing silicon dioxide-comprising layers in the fabrication of integrated circuitry, and methods of forming bit line over capacitor arrays of memory cells
07/20/2006US20060160357 Semiconductor device and method for manufacturing the same
07/20/2006US20060160345 Innovative growth method to achieve high quality III-nitride layers for wide band gap optoelectronic and electronic devices
07/20/2006US20060160341 Method for fabricating semiconductor device
07/20/2006US20060160316 Silicon Carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
07/20/2006US20060160309 Method of manufacturing a superjunction device with conventional terminations
07/20/2006US20060160305 Pillar Cell Flash Memory Technology
07/20/2006US20060160301 Method for fabricating a metal-insulator-metal capacitor
07/20/2006US20060160295 Semiconductor device and method for fabricating the same
07/20/2006US20060160293 Cell structure of EPROM device and method for fabricating the same