Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2006
08/03/2006US20060170030 Semiconductor device
08/03/2006US20060170029 Novel process for erase improvement in a non-volatile memory device
08/03/2006US20060170028 Non-volatile memory device, methods of fabricating and operating the same
08/03/2006US20060170027 Nonvolatile memory device made of resistance material and method of fabricating the same
08/03/2006US20060170026 Non-volatile memory and fabricating method and operating method thereof
08/03/2006US20060170025 Planarization of metal container structures
08/03/2006US20060170024 Method of forming a mim capacitor for cu beol application
08/03/2006US20060170023 Semiconductor integrated circuit device
08/03/2006US20060170022 Silicon molecular hybrid storage cell
08/03/2006US20060170021 Ferroelectric capacitor
08/03/2006US20060170020 Semiconductor memory device and method for fabricating the same
08/03/2006US20060170019 Semiconductor storage device and manufacturing method for the same
08/03/2006US20060170017 Semiconductor device and manufacturing method thereof
08/03/2006US20060170016 Asymmetric spacers and asymmetric source/drain extension layers
08/03/2006US20060170014 Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane
08/03/2006US20060170013 ZnO group epitaxial semiconductor device and its manufacture
08/03/2006US20060170012 Micromechanical component and suitable method for its manufacture
08/03/2006US20060170011 Semiconductor device and manufacturing method thereof
08/03/2006US20060170010 Electrical component and switching mechanism
08/03/2006US20060170009 Solid state image sensing device and production method therefor, and method of driving solid state image sensing device
08/03/2006US20060170008 Cold cathode field emission display
08/03/2006US20060170007 Solid-state image sensor
08/03/2006US20060170006 Semiconductor device and method of manufacturing the same
08/03/2006US20060170002 Adjustable CCD charge splitter
08/03/2006US20060169985 Electrode for p-type SiC
08/03/2006US20060169984 Thin film transistor array panel
08/03/2006US20060169983 Active matrix substrate and its manufacturing method
08/03/2006US20060169982 Liquid crystal display with noise filtering capacitor
08/03/2006US20060169981 Thin film transistor array panel for organic electro luminescent display
08/03/2006US20060169980 Electrochromic display
08/03/2006US20060169979 Light emitting device and electronic device
08/03/2006US20060169976 Semiconductor device
08/03/2006US20060169975 biosensors has the coated nanotubes or nanowires as nanoelectrodes; phospholipid layer has a protein pore that is sensitive to biowarfare agents; detecting bacteria, viruses and toxins; medical equipment
08/03/2006US20060169974 Thin film transistor, a method of manufacturing the same, and a flat panel display device including the thin film transistor
08/03/2006US20060169973 Semiconductor device, electronic device, and method of manufacturing semiconductor device
08/03/2006US20060169972 Vertical carbon nanotube transistor integration
08/03/2006US20060169969 Bandgap cascade cold cathode
08/03/2006US20060169968 Pillar phase change memory cell
08/03/2006US20060169944 Wafer having a diameter of 4 inches or more, an in-wafer plane dislocation density of 30,000/cm2 or more and 100,000/cm2 or less; and residual strain of 1.8x10-5 or less; slip dislocation can be prevented in heat treatment by limiting the dislocation density in wafer plane
08/03/2006DE19857060B4 Verfahren zum Herstellen von Quantenpunkten in einem Halbleiterbauteil A method of producing quantum dots in a semiconductor device
08/03/2006DE112004001864T5 Verfahren und Vorrichtung zur Verbesserung der Stabilität einer 6-Transistor-CMOS-SRAM-Zelle A method and apparatus for improving the stability of a 6-transistor CMOS SRAM cell
08/03/2006DE10213082B4 MOS-Transistor und Verfahren zu seiner Herstellung MOS transistor and method for its preparation
08/03/2006DE102005042048A1 Halbleiterbauteil mit isolierter Steuerelektrode und Verfahren zu seiner Herstellung A semiconductor device comprising insulated gate electrode and method for its preparation
08/03/2006DE102005003107A1 Varactor diode for LC-series circuit, has space-charge zone whose width is larger than half of finger-shaped/comb-shaped structure thickness when specific depletion voltage is applied to form charge carrier free regions
08/03/2006DE10121551B4 Rückwärts leitende Thyristoreinrichtung Reverse conducting thyristor
08/03/2006DE10012897B4 Transistor und Verfahren zu seiner Herstellung bzw. Hestellung einer Halbleitervorrichtung Transistor and method of its manufacture or operations department of a semiconductor device
08/02/2006EP1686629A1 Semiconductor device and method for manufacturing same
08/02/2006EP1686626A2 Method of separating thin film device, method of transferring thin film device, thin film device, active matrix substrate and liquid crystal display device
08/02/2006EP1686616A2 Process for manufacture of mos gated device with reduced mask count
08/02/2006EP1685601A1 Strained semiconductor devices
08/02/2006EP1685599A1 Igbt cathode design with improved safe operating area capability
08/02/2006EP1685593A1 Apparatus and method for vertical split-gate nrom memory
08/02/2006EP1685592A1 Charge-trapping memory device, operating and manufacturing
08/02/2006EP1685591A1 Method for the production of transistor structures with ldd
08/02/2006EP1685590A2 Ultra high-speed si/sige modulation-doped field effect transistors on ultra thin soi/sgoi substrate
08/02/2006EP1685584A2 SILICON DEVICE ON Si:C-OI and SGOI AND METHOD OF MANUFACTURE
08/02/2006EP1684973A2 Vicinal gallium nitride substrate for high quality homoepitaxy
08/02/2006EP1518245A4 Enhanced read-write methods for negative differential resistance (ndr) based memory device
08/02/2006EP1345842B1 Method for producing a semiconductor component having a movable mass in particular, and semiconductor component produced according to this method
08/02/2006EP1312123A4 Metal sulfide semiconductor transistor devices
08/02/2006EP1312122A4 Integrated transistor devices
08/02/2006EP0963608B1 Subscriber interface protection circuit
08/02/2006CN2802729Y Picture element unit storage capacitor of silicon-base liquid rystal display chip
08/02/2006CN1813361A Field effect chalcogenide devices
08/02/2006CN1813357A P-n heterojunction structure of zinc oxide-based nanorod and semiconductor thin film, preparation thereof, and nano-device comprising same
08/02/2006CN1813355A Semiconductor device including mosfet having band-engineered superlattice
08/02/2006CN1813354A Method for making semiconductor device including band-engineered superlattice
08/02/2006CN1813353A Method for making semiconductor device including band-engineered superlattice
08/02/2006CN1813352A Method for making semiconductor device including band-engineered superlattice
08/02/2006CN1813344A Thin film transistor, thin film transistor substrate, electronic apparatus and process for producing polycrystalline semiconductor thin film
08/02/2006CN1812134A P-type and N-type zinc oxide thin film and producing method thereof
08/02/2006CN1812132A High-frequency low-consumption power junction type field effect transistor
08/02/2006CN1812131A Double gate memory cell with improved tunnel oxide
08/02/2006CN1812130A Semiconductor device and method for manufacturing the same
08/02/2006CN1812129A Semiconductor device and method of manufacturing the same
08/02/2006CN1812128A Gate of a memory transistor with a ferroelectric layer and method of manufacturing the same
08/02/2006CN1812127A Vertical trench gate transistor semiconductor device and method for fabricating the same
08/02/2006CN1812126A Semiconductor device employing an extension spacer
08/02/2006CN1812125A Semi-conductor transistor possessing decreased grid electrode-source electrode /drain capacitor
08/02/2006CN1812124A Achieving method for multi-valued phase changing storage device
08/02/2006CN1812123A Resonant tunneling device using metal oxide semiconductor processing
08/02/2006CN1812122A Semiconductor device and manufacturing process thereof
08/02/2006CN1812121A Insulated gate semiconductor device and method of manufacturing the same
08/02/2006CN1812120A Semiconductor device
08/02/2006CN1812112A Solid image sensor device with nonplanar transistor and manufacture method thereof
08/02/2006CN1812111A Image sensor pixel unit,Image sensor apparatus and method of manufacturing same
08/02/2006CN1812108A 半导体装置 Semiconductor device
08/02/2006CN1812107A Semiconductor device and manufacturing method thereof
08/02/2006CN1812103A Semiconductor device having a silicon layer in a gate electrode
08/02/2006CN1812101A Compensated metal oxide semiconductor and forming method thereof
08/02/2006CN1812059A Zener diode and methods for fabricating and packaging same
08/02/2006CN1811570A Thin film transistor array panel, liquid crystal display including the panel and manufacturing method thereof
08/02/2006CN1811556A Liquid crystal display
08/02/2006CN1811398A FET-type biosensor with surface modification
08/02/2006CN1268046C Method for forming third main group nitride semiconductor layer and semiconductor device
08/02/2006CN1268007C Pre-equilibrium chemical reation energy converter
08/02/2006CN1268006C Film transistor and its producing method
08/02/2006CN1268005C Semiconductor device and its manufacturing method
08/02/2006CN1268004C Double-grid high-voltage N-type Mos transistor
08/02/2006CN1268003C Semiconductor device and methdo of manufacturing the same