Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2006
08/10/2006WO2005114737A3 Illuminable gaas switching component with a transparent housing, and microwave circuit therewith
08/10/2006US20060178018 Silicon oxynitride gate dielectric formation using multiple annealing steps
08/10/2006US20060177997 Methods of forming semiconductor devices with high-k gate dielectric
08/10/2006US20060177995 Voltage sustaining layer with opposite-doped islands for semiconductor power devices
08/10/2006US20060177986 High fT and fmax bipolar transistor and method of making same
08/10/2006US20060177985 Source/drain extension implant process for use with short time anneals
08/10/2006US20060177983 Method for forming a notched gate
08/10/2006US20060177974 Semiconductor thin film, thin film transistor, method for manufacturing same, and manufacturing equipment of semiconductor thin film
08/10/2006US20060177972 Thin-film transistor and method for manufacturing the same
08/10/2006US20060177962 Process for producing n-type semiconductor diamond and n-type semiconductor diamond
08/10/2006US20060177947 Magnetoresistive random-access memory device
08/10/2006US20060177361 Crystallized film and process for production thereof
08/10/2006US20060176415 Display device and method for repairing line disconnection thereof
08/10/2006US20060176342 Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
08/10/2006US20060175712 High performance IC package and method
08/10/2006US20060175681 Method to grow III-nitride materials using no buffer layer
08/10/2006US20060175680 Balun
08/10/2006US20060175679 Semiconductor device and method for manufacturing the same
08/10/2006US20060175673 System and device including a barrier layer
08/10/2006US20060175672 Semiconductor device and method of manufacturing the same
08/10/2006US20060175671 MOSFET having a channel mechanically stressed by an epitaxially grown, high k strain layer
08/10/2006US20060175670 Field effect transistor and method of manufacturing a field effect transistor
08/10/2006US20060175669 Semiconductor device including FinFET having metal gate electrode and fabricating method thereof
08/10/2006US20060175668 Analytic structure for failure analysis of semiconductor device
08/10/2006US20060175667 MOSFET-type semiconductor device, and method of manufacturing the same
08/10/2006US20060175666 Integrated circuit arrangement with low-resistance contacts and method for production thereof
08/10/2006US20060175664 Semiconductor constructions, and methods of forming metal silicides
08/10/2006US20060175662 Reverse blocking semiconductor component with charge compensation
08/10/2006US20060175658 High voltage laterally double-diffused metal oxide semiconductor
08/10/2006US20060175657 Advanced CMOS using super steep retrograde wells
08/10/2006US20060175656 Non-volatile memory devices
08/10/2006US20060175655 Non-volatile memory and method for manufacturing non-volatile memory
08/10/2006US20060175654 Flash memory
08/10/2006US20060175653 Nonvolatile nanochannel memory device using mesoporous material
08/10/2006US20060175652 Non-volatile memory and operating method thereof
08/10/2006US20060175651 Semiconductor integrated circuit device and process for manufacturing the same
08/10/2006US20060175650 Memory cells with vertical transistor and capacitor and fabrication methods thereof
08/10/2006US20060175649 SRAM devices, and electronic systems comprising SRAM devices
08/10/2006US20060175648 Memory device and manufacturing method thereof
08/10/2006US20060175647 Semiconductor product having a semiconductor substrate and a test structure and method
08/10/2006US20060175646 Memory element using active layer of blended materials
08/10/2006US20060175645 Semiconductor device and its manufacturing method
08/10/2006US20060175644 Ferroelectric recording medium and writing method for the same
08/10/2006US20060175643 Ferroelectric element and method of manufacturing ferroelectric element
08/10/2006US20060175642 Semiconductor device and method of manufacturing the same
08/10/2006US20060175640 Semiconductor memory device, memory cell array, and method for fabricating the same
08/10/2006US20060175639 Electrode structure comprising an improved output compatibility and method for producing said structure
08/10/2006US20060175634 Redundant interconnect high current bipolar device and method of forming the device
08/10/2006US20060175632 Monolithic integrated circuit having enhancement mode/depletion mode field effect transistors and RF/RF/microwave/milli-meter wave milli-meter wave field effect transistors
08/10/2006US20060175629 Vertical thyristor for ESD protection and a method of fabricating a vertical thyristor for ESD protection
08/10/2006US20060175628 Nitride-based semiconductor device of reduced voltage drop, and method of fabrication
08/10/2006US20060175627 Power supply, multi chip module, system in package and non-isolated DC-DC converter
08/10/2006US20060175621 Semiconductor light-emitting device light-emitting display method for manufacturing semiconductor light-emitting device and method for manufacturing light-emitting display
08/10/2006US20060175613 Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device
08/10/2006US20060175612 Semiconductor device and fabrication method thereof
08/10/2006US20060175611 Thin film transistor circuit device, production method thereof and liquid crystal display using the thin film transistor circuit device
08/10/2006US20060175610 Signal line, thin film transistor array panel with the signal line, and method for manufacturing the same
08/10/2006US20060175609 Vertical thin film transistor with short-channel effect suppression
08/10/2006US20060175608 Relaxation of a strained layer using a molten layer
08/10/2006US20060175605 Organometallic light-emitting material
08/10/2006US20060175604 Novel type of attachment of organic molecules to a silicon surface for producing memory elements having organic constituents
08/10/2006US20060175603 Compound used to form a self-assembled monolayer, layer structure, semiconductor component having a layer structure, and method for producing a layer structure
08/10/2006US20060175602 Organic electroluminescent display
08/10/2006US20060175599 Phase change memory cell with high read margin at low power operation
08/10/2006US20060175597 Phase change memory cell with high read margin at low power operation
08/10/2006US20060175596 Phase change memory cell with high read margin at low power operation
08/10/2006US20060174718 Multi-axis sensor
08/10/2006DE10339703B4 Schaltungsanordnung für einen hochauflösenden digital steuerbaren Schwingkreis Circuit arrangement for a high resolution digitally controlled oscillator
08/10/2006DE10318422B4 Hochfrequenz-Bipolartransistor mit Silizidregion und Verfahren zur Herstellung desselben Of the same high-frequency bipolar transistor with silicide and methods for preparing
08/10/2006DE10244569B4 Gate-Bearbeitungsverfahren mit reduzierter Gateoxid Ecken- und Kantenverdünnung Gate processing method with reduced gate oxide corner and edge thinning
08/10/2006DE10209989B4 Verfahren zur Herstellung von DRAM-Grabenkondensatorstrukturen mit kleinen Durchmessern mittels SOI-Technologie Process for the preparation of grave DRAM capacitor structures having small diameters by means of SOI technology
08/10/2006DE102006002439A1 Halbleitervorrichtung Semiconductor device
08/10/2006DE102006002438A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
08/10/2006DE102005004709A1 Verfahren zur Herstellung integrierter Schaltungen A process for the manufacture of integrated circuits
08/10/2006DE102005004708A1 Verfahren zur Herstellung integrierter Schaltkreise mit mindestens einem Silizium-Germanium-Heterobipolartransistor A process for the production of integrated circuits having at least one silicon-germanium heterobipolar
08/10/2006DE102005004707A1 Verfahren zur Herstellung integrierter Schaltkreise mit Silizium-Germanium-Heterobipolartransistoren A process for manufacturing integrated circuits with silicon-germanium heterobipolar
08/10/2006DE102005004355A1 Power semiconductor device e.g. high voltage diode, has p-type transition doping region in transition region, where doping in transient doping region of device or part of device is compensated while doping in region near device surface
08/10/2006DE102005002198B3 Power semiconductor component, has surface electrodes connected to one semiconductor layer in such a manner that lateral running series circuit of MOS diodes is formed, where electrodes lie partially directly on layer
08/10/2006DE10157510B4 MOS-Halbleiterbauelement MOS semiconductor device
08/09/2006WO2006024979A1 Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
08/09/2006EP1689006A2 Multi-bit magnetic memory device using spin-polarized current and methods of manufacturing and operating the same
08/09/2006EP1689002A2 Nonvolatile memory device and method of manufacturing the same
08/09/2006EP1689001A2 High-voltage semiconductor devices
08/09/2006EP1689000A1 Semiconductor element
08/09/2006EP1688989A1 Method of manufacturing integrated circuits comprising at least one silicon germanium heterobipolar transistor
08/09/2006EP1687843A1 Method for the production of a nanoscale semiconductor structure and vertical semiconductor components based on said semiconductor structure
08/09/2006EP1687457A2 Metal carbide gate structure and method of fabrication
08/09/2006EP1588453A4 Varactor apparatuses and methods
08/09/2006EP1581986A4 Temperature insensitive quantum dot lasers and photonic gain devices having proximity-placed acceptor impurities, and methods therefor
08/09/2006EP1543565A4 Heterojunction field effect transistors using silicon-germanium and silicon-carbon alloys
08/09/2006EP1292974B1 Method for making an electronic component with self-aligned drain and gate, in damascene architecture
08/09/2006EP1249035B1 Silicon/germanium bipolar transistor with an optimized germanium profile
08/09/2006EP1095410B1 Semiconductor arrangement with ohmic contact and a method for contacting a semiconductor arrangement
08/09/2006EP0951739B1 High density electrical connectors
08/09/2006CN2805096Y Semiconductor elements
08/09/2006CN2805095Y 集成电路 IC
08/09/2006CN2805022Y Magnetic random axxess storage device
08/09/2006CN1817027A Apparatus and method for enhancing dynamic range of charge coupled device-based spectrograph
08/09/2006CN1816914A Semiconductor device, method of manufacturing a quantum well structure and a semiconductor device comprising such a quantum well structure
08/09/2006CN1816883A Nonvolatile memory and method of making same