| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/15/2006 | US7091608 Chip package |
| 08/15/2006 | US7091606 Circuit device and manufacturing method of circuit device and semiconductor module |
| 08/15/2006 | US7091604 Three dimensional integrated circuits |
| 08/15/2006 | US7091597 Power supply device |
| 08/15/2006 | US7091581 Integrated circuit package and process for fabricating the same |
| 08/15/2006 | US7091579 Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof |
| 08/15/2006 | US7091578 Bipolar junction transistors and methods of manufacturing the same |
| 08/15/2006 | US7091577 Voltage-dividing resistor and semiconductor device having the same |
| 08/15/2006 | US7091576 Inductor for semiconductor integrated circuit and method of fabricating the same |
| 08/15/2006 | US7091575 Open pattern inductor |
| 08/15/2006 | US7091574 Voltage island circuit placement |
| 08/15/2006 | US7091573 Power transistor |
| 08/15/2006 | US7091572 Fast recovery diode with a single large area p/n junction |
| 08/15/2006 | US7091570 MOS device and a process for manufacturing MOS devices using a dual-polysilicon layer technology with side contact |
| 08/15/2006 | US7091569 Gate and CMOS structure and MOS structure |
| 08/15/2006 | US7091568 Electronic device including dielectric layer, and a process for forming the electronic device |
| 08/15/2006 | US7091567 Semiconductor device including air gap between semiconductor substrate and L-shaped spacer and method of fabricating the same |
| 08/15/2006 | US7091566 Dual gate FinFet |
| 08/15/2006 | US7091565 Efficient transistor structure |
| 08/15/2006 | US7091564 Semiconductor chip with fuse unit |
| 08/15/2006 | US7091562 CMOS power sensor |
| 08/15/2006 | US7091561 Field effect transistor and method of manufacturing the same |
| 08/15/2006 | US7091560 Method and structure to decrease area capacitance within a buried insulator device |
| 08/15/2006 | US7091559 Junction electronic component and an integrated power device incorporating said component |
| 08/15/2006 | US7091558 MOS power device with high integration density and manufacturing process thereof |
| 08/15/2006 | US7091557 Semiconductor component with increased dielectric strength and/or reduced on resistance |
| 08/15/2006 | US7091556 High voltage drain-extended transistor |
| 08/15/2006 | US7091555 Semiconductor device for switching |
| 08/15/2006 | US7091554 Semiconductor device |
| 08/15/2006 | US7091553 Top oxide nitride liner integration scheme for vertical DRAM |
| 08/15/2006 | US7091552 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation |
| 08/15/2006 | US7091551 Four-bit FinFET NVRAM memory device |
| 08/15/2006 | US7091550 Non-volatile memory device and method of manufacturing the same |
| 08/15/2006 | US7091549 Programmable memory devices supported by semiconductor substrates |
| 08/15/2006 | US7091548 Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same |
| 08/15/2006 | US7091546 Semiconductor memory with trench capacitor and method of fabricating the same |
| 08/15/2006 | US7091545 Memory device and fabrication method thereof |
| 08/15/2006 | US7091542 Method of forming a MIM capacitor for Cu BEOL application |
| 08/15/2006 | US7091541 Semiconductor device using a conductive film and method of manufacturing the same |
| 08/15/2006 | US7091540 Recess transistor (TR) gate to obtain large self-aligned contact (SAC) open margin |
| 08/15/2006 | US7091539 Magnetic random access memory |
| 08/15/2006 | US7091538 Semiconductor device and method for manufacturing the same |
| 08/15/2006 | US7091537 Ferroelectric memory device and method of manufacturing the same |
| 08/15/2006 | US7091535 High voltage device embedded non-volatile memory cell and fabrication method |
| 08/15/2006 | US7091534 Semiconductor device using low dielectric constant material film and method of fabricating the same |
| 08/15/2006 | US7091533 Semiconductor component |
| 08/15/2006 | US7091528 Semiconductor device |
| 08/15/2006 | US7091527 Semiconductor photodetection device |
| 08/15/2006 | US7091524 Semiconductor device and method for fabricating the same |
| 08/15/2006 | US7091522 Strained silicon carbon alloy MOSFET structure and fabrication method thereof |
| 08/15/2006 | US7091521 Display device having a plurality of leads connected to a single common line |
| 08/15/2006 | US7091520 Method of manufacturing semiconductor device having conductive thin films |
| 08/15/2006 | US7091519 Semiconductor thin film, semiconductor device and manufacturing method thereof |
| 08/15/2006 | US7091515 High-temperature superconducting device and manufacturing method thereof |
| 08/15/2006 | US7091513 Cathode assemblies |
| 08/15/2006 | US7091138 Forming method and a forming apparatus of nanocrystalline silicon structure |
| 08/15/2006 | US7091135 Method of manufacturing semiconductor device |
| 08/15/2006 | US7091128 Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETs |
| 08/15/2006 | US7091120 System and process for producing nanowire composites and electronic substrates therefrom |
| 08/15/2006 | US7091119 Encapsulated MOS transistor gate structures and methods for making the same |
| 08/15/2006 | US7091114 Semiconductor device and method of manufacturing the same |
| 08/15/2006 | US7091113 Methods of forming semiconductor constructions |
| 08/15/2006 | US7091112 Method of forming a polycrystalline silicon layer |
| 08/15/2006 | US7091110 Method of manufacturing a semiconductor device by gettering using a anti-diffusion layer |
| 08/15/2006 | US7091100 Polysilicon bipolar transistor and method of manufacturing it |
| 08/15/2006 | US7091099 Bipolar transistor and method for fabricating the same |
| 08/15/2006 | US7091098 Semiconductor device with spacer having batch and non-batch layers |
| 08/15/2006 | US7091096 Method of fabricating carbon nanotube field-effect transistors through controlled electrochemical modification |
| 08/15/2006 | US7091095 Dual strain-state SiGe layers for microelectronics |
| 08/15/2006 | US7091094 Method of making a semiconductor device having a gate electrode with an hourglass shape |
| 08/15/2006 | US7091092 Process flow for a performance enhanced MOSFET with self-aligned, recessed channel |
| 08/15/2006 | US7091090 Nonvolatile memory device and method of forming same |
| 08/15/2006 | US7091085 Reduced cell-to-cell shorting for memory arrays |
| 08/15/2006 | US7091083 Method for producing a capacitor |
| 08/15/2006 | US7091082 Semiconductor method and device |
| 08/15/2006 | US7091081 Method for patterning a semiconductor region |
| 08/15/2006 | US7091080 Depletion implant for power MOSFET |
| 08/15/2006 | US7091076 Method for fabricating semiconductor device having first and second gate electrodes |
| 08/15/2006 | US7091073 Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate |
| 08/15/2006 | US7091072 Semiconductor device and method for manufacturing the same |
| 08/15/2006 | US7091070 Semiconductor device and method of manufacturing the same |
| 08/15/2006 | US7091052 Method of forming ferroelectric memory cell |
| 08/15/2006 | US7090966 Variations in the accumulated illumination intensity of radiation on the surface of the plate are controlled to 20% or less, thus alleviating unevenness of distribution of energy to be irradiated on the plate; forming a conductive film by discharging a liquid material using an ink-jet |
| 08/15/2006 | US7090317 Wire baskets and related devices |
| 08/15/2006 | US7089799 Pressure sensor device and method of producing the same |
| 08/10/2006 | WO2006083909A2 Method of making substitutionally carbon-highly doped crystalline si-layers by cvd |
| 08/10/2006 | WO2006083821A1 Selective deposition of silicon-containing films |
| 08/10/2006 | WO2006083546A2 In situ formed halo region in a transistor device |
| 08/10/2006 | WO2006083383A2 Low temperature grown insulated gate phemt device |
| 08/10/2006 | WO2006082730A1 Semiconductor device manufacturing method and plasma oxidation method |
| 08/10/2006 | WO2006082718A1 Dielectric film and method for forming the same |
| 08/10/2006 | WO2006082618A1 Semiconductor device and method for manufacturing the same |
| 08/10/2006 | WO2006082617A1 Semiconductor device |
| 08/10/2006 | WO2006082568A2 Method of manufacturing a lateral semiconductor device |
| 08/10/2006 | WO2006082247A1 Multi-gate fet with multi-layer channel |
| 08/10/2006 | WO2006081987A1 Method for producing integrated circuits provided with silicon- germanium hetero-bipolar transistors |
| 08/10/2006 | WO2006081974A1 Method for the production of integrated circuits |
| 08/10/2006 | WO2006036599A3 Light emitting diodes exhibiting both high reflectivity and high light extraction |
| 08/10/2006 | WO2006009895A3 Gate bias circuit mos charge coupled devices |
| 08/10/2006 | WO2005119786A3 Decoupled field plate for fets |