| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/12/2007 | US20070082424 Fabricating method of a thin film transistor array |
| 04/12/2007 | US20070082416 Semiconductor device |
| 04/12/2007 | US20070082144 Method for forming thin film pattern, thin film manufacturing device, conductive thin film wiring, electro-optic device, electronic apparatus, and non-contact card medium |
| 04/12/2007 | US20070080918 Display device |
| 04/12/2007 | US20070080452 Bump structure and its forming method |
| 04/12/2007 | US20070080450 Wafer level laser marking system for ultra-thin wafers using support tape |
| 04/12/2007 | US20070080440 Soi device with different crystallographic orientations |
| 04/12/2007 | US20070080426 Single lithography-step planar metal-insulator-metal capacitor and resistor |
| 04/12/2007 | US20070080425 Method for simultaneous fabrication of a nanocrystal and non-nanocrystal device |
| 04/12/2007 | US20070080424 Well for CMOS imager and method of formation |
| 04/12/2007 | US20070080421 Memory device having highly integrated cell structure and method of its fabrication |
| 04/12/2007 | US20070080418 Wafer-level chip-scale package of image sensor and method of manufacturing the same |
| 04/12/2007 | US20070080412 Electric acoustic converter and electronic device using the same |
| 04/12/2007 | US20070080411 Semiconductive film with dopant diffusion barrier and tunable work function |
| 04/12/2007 | US20070080410 Method of forming transistor having recess channel in semiconductor memory, and structure thereof |
| 04/12/2007 | US20070080409 Mixed-signal semiconductor platform incorporating fully-depleted castellated-gate MOSFET device and method of manufacture thereof |
| 04/12/2007 | US20070080408 Method for forming a silicidated contact |
| 04/12/2007 | US20070080407 Insulated gate bipolar transistor |
| 04/12/2007 | US20070080406 CMOS device with zero soft error rate |
| 04/12/2007 | US20070080405 Semiconductor device and method for fabricating the same |
| 04/12/2007 | US20070080401 Structure and method for forming asymmetrical overlap capacitance in field effect transistors |
| 04/12/2007 | US20070080400 Low Noise Vertical Variable Gate Control Voltage JFET Device in a BiCMOS Process and Methods to Build this Device |
| 04/12/2007 | US20070080399 Semiconductor device and production method therefor |
| 04/12/2007 | US20070080398 Fabricating method of a high voltage metal oxide semiconductor device |
| 04/12/2007 | US20070080397 Semiconductor device including field effect transistor having asymmetric structure and method of manufacturing the same |
| 04/12/2007 | US20070080396 Metal oxide semiconductor device and fabricating method thereof |
| 04/12/2007 | US20070080395 Lateral SOI component having a reduced on resistance |
| 04/12/2007 | US20070080394 Nonvolatile memory |
| 04/12/2007 | US20070080393 Semiconductor device having n-channel type MOS transistor with gate electrode layer featuring small average polycrystalline silicon grain size |
| 04/12/2007 | US20070080392 Semiconductor device and method of fabricating the same |
| 04/12/2007 | US20070080391 Semiconductor device with front side metallization and method for the production thereof |
| 04/12/2007 | US20070080390 Memory transistor and memory unit with asymmetrical pocket doping region |
| 04/12/2007 | US20070080389 Dynamic control of capacitance elements in field effect structures |
| 04/12/2007 | US20070080388 Capacitor assembly |
| 04/12/2007 | US20070080386 Dual damascene structure |
| 04/12/2007 | US20070080385 Semiconductor device having vertical transistor and method of fabricating the same |
| 04/12/2007 | US20070080384 Phase change memory devices using magnetic resistance effect, methods of operating and methods of fabricating the same |
| 04/12/2007 | US20070080383 Semiconductor device |
| 04/12/2007 | US20070080382 Semiconductor device |
| 04/12/2007 | US20070080381 Robust protective layer for MTJ devices |
| 04/12/2007 | US20070080380 Self-aligned gate isolation |
| 04/12/2007 | US20070080379 Insulated gate field effect transistor |
| 04/12/2007 | US20070080378 Ultraviolet Blocking Layer |
| 04/12/2007 | US20070080376 Solid-state image pickup device, driving method for solid-state image pickup device and image pickup apparatus |
| 04/12/2007 | US20070080374 Semiconductor device |
| 04/12/2007 | US20070080372 Composite structure with high heat dissipation |
| 04/12/2007 | US20070080371 Display device |
| 04/12/2007 | US20070080370 Display device |
| 04/12/2007 | US20070080367 Nitride semiconductor and method for manufacturing thereof |
| 04/12/2007 | US20070080366 Nitride semiconductor substrate, and method for working nitride semiconductor substrate |
| 04/12/2007 | US20070080364 White light emitting device capable of adjusting color temperature |
| 04/12/2007 | US20070080356 Display device and method for manufacturing display device |
| 04/12/2007 | US20070080351 Display device |
| 04/12/2007 | US20070080350 Panel for flexible display device and manufacturing method thereof |
| 04/12/2007 | US20070080349 Substrate for display device and liquid crystal display device having the same |
| 04/12/2007 | US20070080348 Active device array substrate |
| 04/12/2007 | US20070080346 Organic thin film transistor array panel |
| 04/12/2007 | US20070080345 Volatile negative differential resistance device using metal nanoparticles |
| 04/12/2007 | US20070080344 Thin film diode panel for trans-reflective liquid crystal display |
| 04/12/2007 | US20070080343 New materials for electroluminescence and the utilization thereof |
| 04/12/2007 | US20070080340 Variable Capacitor Single-Electron Device |
| 04/12/2007 | US20070080339 Universal gates for ising TQFT via time-tilted interferometry |
| 04/12/2007 | US20070080338 Infra-red light-emitting device |
| 04/12/2007 | US20070080337 Radiation emitting component |
| 04/12/2007 | US20070080335 Gettering using voids formed by surface transformation |
| 04/12/2007 | DE4042699B4 MOS device, esp. power vertical-MOSFET - with high switch=off capacitance and no signal conductor effects |
| 04/12/2007 | DE19527131B4 Halbleitervorrichtung mit einer T-förmigen Gatestruktur und Verfahren zu deren Herstellung A semiconductor device comprising a T-shaped gate structure and process for their preparation |
| 04/12/2007 | DE10303335B4 Halbleiterbauteil Semiconductor device |
| 04/12/2007 | DE10260185B4 Halbleiterspeicher mit vertikalen Charge-trapping-Speicherzellen und Verfahren zu seiner Herstellung A semiconductor memory with vertical charge-trapping memory cells and methods for its preparation |
| 04/12/2007 | DE102006004627B3 Leistungshalbleiterbauelement mit Ladungskompensationsstruktur und Verfahren zur Herstellung desselben Power semiconductor component thereof having charge compensation structure and method for producing |
| 04/12/2007 | DE102005048000A1 Transistor mit zuverlässiger Source-Dotierung und Verfahren zur Herstellung Transistor with reliable source doping and methods for preparing |
| 04/12/2007 | DE102005047169A1 Lateral DMOS transistor has trench drain zone where load current is guided in drift zone both vertically through buried layer and laterally through conductive filler structure |
| 04/12/2007 | DE102005047058A1 Herstellungsverfahren für einen Graben-Transistor und entsprechender Graben-Transistor Manufacturing method of a trench transistor and trench transistor corresponding |
| 04/12/2007 | DE102005047054A1 Power-metal oxide semiconductor transistor e.g. power-insulated gate bipolar transistor, for integrated circuit, has inversion channel characterized as channel region, formed in section of body region and arranged in one semiconductor layer |
| 04/12/2007 | DE102005047000A1 Halbleiterstruktur zur Ableitung eines Überspannungsimpulses und Verfahren zur Herstellung desselben A semiconductor structure for deriving an overvoltage pulse and method of manufacturing the same |
| 04/12/2007 | DE102005046706A1 JBS-SiC-Halbleiterbauelement JBS-SiC semiconductor device |
| 04/12/2007 | DE102005046007A1 Lateral compensation semiconductor component for use as high voltage transistor, has coupling layers for connection of compensation cells with each other, where layers are of p-type conduction and are in connection with source region |
| 04/12/2007 | DE102004024112B4 Schaltung zur Messung des Stromes durch einen Leistungs-MOSFET Circuit for measuring the current through a power MOSFET |
| 04/12/2007 | DE10127950B4 Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement A process for producing a semiconductor device and semiconductor device |
| 04/12/2007 | DE10127945B4 Matrix-Substrat für Flüssigkristallanzeige und Verfahren zum Herstellen eines Matrix-Substrats für eine Flüssigkristallanzeige Matrix substrate for liquid crystal display and method of manufacturing a matrix substrate for a liquid crystal display |
| 04/11/2007 | EP1772906A1 High-voltage field-effect transistor and method of making a high-voltage field-effect transistor |
| 04/11/2007 | EP1772905A1 Process for fabrication of a planar heterostructure |
| 04/11/2007 | EP1771888A2 Nanoscale fet |
| 04/11/2007 | EP1771887A1 Bipolar transistor and method of manufacturing the same |
| 04/11/2007 | EP1771886A1 Insulated gate field effect transistors |
| 04/11/2007 | EP1771885A1 Semiconductor device and method of manufacturing the same |
| 04/11/2007 | EP1771884A1 Semiconductor device and method of manufacturing the same |
| 04/11/2007 | EP1771876A1 Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
| 04/11/2007 | EP1644988A4 High-density finfet integration scheme |
| 04/11/2007 | EP1518277B1 Method for the production of an nrom memory cell field |
| 04/11/2007 | EP1480304B1 Quantum nano-composite semiconductor laser and quantum nano-composite array |
| 04/11/2007 | EP1292648B1 Heterostructure with rear-face donor doping |
| 04/11/2007 | EP1247299B1 Encapsulated tungsten gate mos transistor and memory cell and method of making same |
| 04/11/2007 | EP1173896B1 Electrostatically controlled tunneling transistor |
| 04/11/2007 | CN2888651Y Structure of high-overload resisting SOI pressure sensitive chip |
| 04/11/2007 | CN1947264A III-nitride bidirectional switch |
| 04/11/2007 | CN1947263A Gate layer diode method and apparatus |
| 04/11/2007 | CN1947262A LDMOS transistor and manufacture method thereof |
| 04/11/2007 | CN1947261A Trench semiconductor device and method of manufacturing it |
| 04/11/2007 | CN1947260A Isolation trench |