Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2007
04/26/2007US20070090473 Microelectromechanical component and method for the production thereof
04/26/2007US20070090472 Semiconductor device and method for production thereof
04/26/2007US20070090471 Low threshold voltage semiconductor device with dual threshold voltage control means
04/26/2007US20070090470 Semiconductor devices with a field shaping region
04/26/2007US20070090469 Semiconductor device
04/26/2007US20070090468 Semiconductor device with silicon-film fins and method of manufacturing the same
04/26/2007US20070090467 Semiconductor substrate with multiple crystallographic orientations
04/26/2007US20070090466 Methods of forming electronic devices having partially elevated source/drain structures
04/26/2007US20070090465 Semiconductor device and method for manufacturing the same
04/26/2007US20070090464 Power circuit package and fabrication method
04/26/2007US20070090463 Semiconductor devices with multiple heat sinks
04/26/2007US20070090462 Silicided regions for NMOS and PMOS devices
04/26/2007US20070090457 Thin film transistor substrate for display unit
04/26/2007US20070090455 Electronic device including transistor structures with sidewall spacers and a process for forming the electronic device
04/26/2007US20070090454 Transistor device
04/26/2007US20070090453 Non-volatile memory and manufacturing method and operating method thereof
04/26/2007US20070090452 Recess channel transistor for preventing deterioration of device characteristics due to misalignment of gate layers and method of forming the same
04/26/2007US20070090451 Lateral dmos transistors including retrograde regions therein and methods of fabricating the same
04/26/2007US20070090450 Semiconductor device with high dielectric constant insulating film and manufacturing method for the same
04/26/2007US20070090449 Non-volatile memory devices and methods of forming the same
04/26/2007US20070090448 Systems and methods for memory structure comprising embedded flash memory
04/26/2007US20070090447 Semiconductor device and method of manufacture thereof
04/26/2007US20070090446 Hardmask etch for gate polyetch
04/26/2007US20070090445 Non-Volatile Memory Devices with Wraparound-Shaped Floating Gate Electrodes and Methods of Forming Same
04/26/2007US20070090444 Nonvolatile memory device including nano dot and method of fabricating the same
04/26/2007US20070090442 Asymmetric floating gate nand flash memory
04/26/2007US20070090441 Titanium aluminum oxide films
04/26/2007US20070090440 Lanthanum aluminum oxynitride dielectric films
04/26/2007US20070090439 Hafnium titanium oxide films
04/26/2007US20070090437 Semiconductor devices including gate patterns for reducing void formation
04/26/2007US20070090436 Deep trench capacitor
04/26/2007US20070090435 Mos transistor with recessed gate and method of fabricating the same
04/26/2007US20070090434 Power semiconductor device and method therefor
04/26/2007US20070090433 Isolation collar void and methods of forming the same
04/26/2007US20070090432 Method and system for incorporating high voltage devices in an EEPROM
04/26/2007US20070090430 Semiconductor memory device
04/26/2007US20070090429 Capacitor structure
04/26/2007US20070090428 Integrated semiconductor structure for SRAM cells
04/26/2007US20070090426 Ferroelectric capacitor
04/26/2007US20070090425 Memory cell comprising switchable semiconductor memory element with trimmable resistance
04/26/2007US20070090417 Semiconductor device and method for fabricating the same
04/26/2007US20070090416 CMOS devices with a single work function gate electrode and method of fabrication
04/26/2007US20070090415 Power device with high switching speed and manufacturing method thereof
04/26/2007US20070090414 Semiconductor device including ESD protective element
04/26/2007US20070090413 Nonvolatile ferroelectric memory device and method thereof
04/26/2007US20070090412 Semiconductor device
04/26/2007US20070090411 Sensor chip, process for producing the same, and sensor using the same
04/26/2007US20070090409 Semiconductor device comprising an undoped oxide barrier
04/26/2007US20070090408 Narrow-body multiple-gate FET with dominant body transistor for high performance
04/26/2007US20070090407 Thin film transistor array substrate and manufacturing method thereof
04/26/2007US20070090406 Structure and method for manufacturing high performance and low leakage field effect transistor
04/26/2007US20070090404 Process for the fabrication of thin-film device and thin-film device
04/26/2007US20070090399 BiFET semiconductor device having vertically integrated FET and HBT
04/26/2007US20070090395 Semiconductor device and method for fabricating the same
04/26/2007US20070090394 Deep diffused thin photodiodes
04/26/2007US20070090393 Gain cells and methods of making and using the same
04/26/2007US20070090392 Low capacitance SCR with trigger element
04/26/2007US20070090389 COB-typed LED package with phosphor
04/26/2007US20070090381 Semiconductor light emitting device
04/26/2007US20070090378 Nitride-based semiconductor light emitting diode
04/26/2007US20070090373 III-Nitride device with improved layout geometry
04/26/2007US20070090370 Silicon carbide semiconductor device and manufacturing method therefor
04/26/2007US20070090368 Method of manufacturing electro-optical device, electro-optical device, transferred chip, transfer origin substrate, and electronic apparatus
04/26/2007US20070090367 Thin film transistor array panel and manufacturing method thereof
04/26/2007US20070090366 TFT array substrate and photo-masking method for fabricating same
04/26/2007US20070090365 Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor
04/26/2007US20070090362 Thin film transistor, method of manufacturing the same and flat panel display having the thin film transistor
04/26/2007US20070090361 Thin film transistor substrate and liquid crystal display panel
04/26/2007US20070090360 Blanket implant diode
04/26/2007US20070090359 Organic light-emitting diode
04/26/2007US20070090358 Light-emitting device and method for manufacturing the same
04/26/2007US20070090357 Thin film transistor, pixel structure and repairing method thereof
04/26/2007US20070090354 Chalcogenide-based electrokinetic memory element and method of forming the same
04/26/2007US20070090352 Thin film transistor and flat panel display including the same
04/26/2007US20070090351 Organic thin film transistor and flat panel display device having the same
04/26/2007US20070090350 Display device and method for manufacturing the same
04/26/2007US20070090349 Organic thin film transistor, flat panel display apparatus comprising the same, and method of manufacturing the organic thin film transistor
04/26/2007US20070090348 Electronic juction devices featuring redox electrodes
04/26/2007US20070090347 Data driver, display device using the same, and method of driving the same
04/26/2007US20070090346 Porous chalcogenide thin film, method for preparing the same and electronic device using the same
04/26/2007US20070090345 Organic light emitting diode display
04/26/2007US20070090344 Multi-stable molecular device
04/26/2007US20070090343 System and method for processing an organic memory cell
04/26/2007US20070090342 Method for fabrication of high temperature superconductors
04/26/2007US20070090341 Group i-vii semiconductor single crystal thin film and process for producing same
04/26/2007US20070090340 Organic light emitting display, method of fabricating the same, and mobile display including the organic light emitting display
04/26/2007US20070090338 Light-emitting device and light-emitting device array using a whispering gallery mode, and method for manufacturing same
04/26/2007US20070090337 Infrared sensor ic, and infrared sensor and manufacturing method thereof
04/26/2007US20070090336 Semiconductor memory
04/26/2007DE112005001179T5 Verbesserte dielektrische Passivierung für Halbleiterbauelemente Improved dielectric passivation for semiconductor devices
04/26/2007DE10345447B4 Verfahren zum Herstellen eines Halbleiter-Bauteils A method of manufacturing a semiconductor device
04/26/2007DE10314504B4 Verfahren zur Herstellung einer nitridhaltigen Isolationsschicht durch Kompensieren von Stickstoffungleichförmigkeiten A method of manufacturing a nitride-insulating layer by compensating Stickstoffungleichförmigkeiten
04/26/2007DE10246389B4 Verfahren zum Herstellen eines Trench-Halbleiterbauelements A method of manufacturing a trench semiconductor device
04/26/2007DE102006044808A1 Halbleitervorrichtung Semiconductor device
04/26/2007DE102005051332A1 Semiconductor substrate for producing semiconductor component, includes monocrystalline material having crystal structure compressed in areas with extrinsic, permanent curvature
04/25/2007EP1777752A2 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
04/25/2007EP1777751A2 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
04/25/2007EP1777750A2 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
04/25/2007EP1777737A1 High-electron-mobility transistor, field-effect transistor, epitaxial substrate, method for manufacturing epitaxial substrate, and method for manufacturing group iii nitride transistor
04/25/2007EP1777581A2 Fabrication of a wiring pattern and of an active matrix substrate