Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2007
06/21/2007US20070138573 Semiconductor device and manufacturing method of the same
06/21/2007US20070138572 An electronics package with an integrated circuit device having post wafer fabrication integrated passive components
06/21/2007US20070138571 Semiconductor device and method for fabricating the same
06/21/2007US20070138570 Formation of raised source/drain structures in NFET with embedded SiGe in PFET
06/21/2007US20070138569 Semiconductor device
06/21/2007US20070138568 Semiconductor device, Its manufacturing method and electronic apparatus thereof
06/21/2007US20070138567 Semiconductor device including a semiconductor substrate formed with a shallow impurity region, and a fabrication method for the same
06/21/2007US20070138566 Semiconductor device and manufacturing method of the same
06/21/2007US20070138565 Extreme high mobility CMOS logic
06/21/2007US20070138564 Double anneal with improved reliability for dual contact etch stop liner scheme
06/21/2007US20070138563 Dual metal gate self-aligned integration
06/21/2007US20070138562 Coaxial through chip connection
06/21/2007US20070138561 Semiconductor device, a manufacturing method thereof, and an evaluation method of the semiconductor device
06/21/2007US20070138560 Semiconductor device and method of manufacturing the same
06/21/2007US20070138557 Semiconductor device
06/21/2007US20070138556 Self-aligned planar double-gate process by self-aligned oxidation
06/21/2007US20070138555 One transistor SOI non-volatile random access memory cell
06/21/2007US20070138554 Full depletion SOI-MOS transistor
06/21/2007US20070138552 Method to produce high voltage device
06/21/2007US20070138551 High voltage semiconductor device and method for fabricating the same
06/21/2007US20070138550 Semiconductor device and method for manufacturing semiconductor device
06/21/2007US20070138548 Power ldmos transistor
06/21/2007US20070138547 Semiconductor device and method of manufacturing the same
06/21/2007US20070138546 Semiconductor device
06/21/2007US20070138545 Semiconductor device having a trench gate and method of fabricating the same
06/21/2007US20070138544 Field plate trench transistor and method for producing it
06/21/2007US20070138543 Semiconductor device
06/21/2007US20070138542 Vertical semiconductor device
06/21/2007US20070138541 Method of erasing data from SONOS memory device
06/21/2007US20070138540 Group III nitride based compound semiconductor optical device
06/21/2007US20070138539 Non-volatile memory device having a nitride-oxide dielectric layer
06/21/2007US20070138538 Method of forming self-aligned floating gate array and flash memory device including self-aligned floating gate array
06/21/2007US20070138537 Non-volatile memory device and method of fabricating a non-volatile memory device
06/21/2007US20070138536 Method of fabricating a semiconductor memory device
06/21/2007US20070138535 Flash devices with shared word lines
06/21/2007US20070138534 Deposition of metal oxide and/or low asymmetrical tunnel barrier interpoly insulators
06/21/2007US20070138533 Substrate solution for back gate controlled SRAM with coexisting logic devices
06/21/2007US20070138532 Semiconductor device with a line and method of fabrication thereof
06/21/2007US20070138530 Electrically floating body memory cell and array, and method of operating or controlling same
06/21/2007US20070138529 MIS capacitor and method of formation
06/21/2007US20070138528 Memory structure for reduced floating body effect
06/21/2007US20070138527 Access transistor for memory device
06/21/2007US20070138526 Pitch reduced patterns relative to photolithography features
06/21/2007US20070138525 Mechanical memory device and method of manufacturing the same
06/21/2007US20070138524 Semiconductor memory device and methods thereof
06/21/2007US20070138523 Transistor, memory cell, memory cell array and method of forming a memory cell array
06/21/2007US20070138522 Memory device
06/21/2007US20070138521 Ferroelectric capacitor and semiconductor device
06/21/2007US20070138520 Ferroelectric passive memory cell, device and method of manufacture thereof
06/21/2007US20070138519 Production process for a semiconductor component with a praseodymium oxide dielectric
06/21/2007US20070138518 Semiconductor device and method of manufacturing thereof
06/21/2007US20070138517 Field-effect transistor, semiconductor device including the field-effect transistor, and method of producing semiconductor device
06/21/2007US20070138516 Semiconductor memory device and method of manufacturing thereof
06/21/2007US20070138514 Integration of planar and tri-gate devices on the same substrate
06/21/2007US20070138513 Input device
06/21/2007US20070138508 Mobile-Based Delayed Flip-Flop Circuit with NRZ-Mode Output
06/21/2007US20070138507 Method of fabricating reduced subthreshold leakage current submicron NFET's with high III/V ratio material
06/21/2007US20070138506 Nitride metal oxide semiconductor integrated transistor devices
06/21/2007US20070138504 Method for manufacturing diode-connected transistor and image display device using the same
06/21/2007US20070138502 Thyristor optimized for a sinusoidal HF control
06/21/2007US20070138501 Semiconductor device and method of manufacturing semiconductor device
06/21/2007US20070138498 Methods and apparatus for packaging integrated circuit devices
06/21/2007US20070138483 Conducting polymer composition and electronic device including layer obtained using the conducting polymer composition
06/21/2007US20070138481 Thin film transistor array panel and manufacturing method thereof
06/21/2007US20070138480 Semiconductor display device and manufacturing method thereof
06/21/2007US20070138479 Light Emitting Device and Element Substrate
06/21/2007US20070138478 Organic light emitting diode display and method of fabricating the same
06/21/2007US20070138477 Semiconductor device and its manufacturing method, and display device and electronic appliance
06/21/2007US20070138476 Thin film transistor array substrate and fabricating method thereof
06/21/2007US20070138475 Semiconductor device and manufacturing method thereof
06/21/2007US20070138474 Thin film transistor array panel and manufacturing method thereof
06/21/2007US20070138473 Semiconductor device and method of manufacture thereof
06/21/2007US20070138472 Method for fabricating TFT array substrate
06/21/2007US20070138471 Liquid crystal display device and method for fabricating the same
06/21/2007US20070138470 Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production
06/21/2007US20070138469 Liquid crystal display device and method for manufacturing the same
06/21/2007US20070138468 Semiconductor device and method for producing it
06/21/2007US20070138464 Structure and method for surface-passivated zinc-oxide based sensor
06/21/2007US20070138463 Transistor
06/21/2007US20070138462 Electronic device with unique encoding
06/21/2007US20070138461 Qwip with electron launcher for reducing dielectric relaxation effect in low background conditions
06/21/2007US20070138460 Light emitting device with three-dimensional structure and fabrication method thereof
06/21/2007US20070138459 Ternary oxide nanostructures and methods of making same
06/21/2007DE10213534B4 Halbleiteraufbau mit Schaltelement und Randelement Semiconductor structure with switching element and boundary element
06/21/2007DE10208965B4 Leistungshalbleiterbauelement für Sperrspannungen über 2000V Power semiconductor device for blocking voltages above 2000V
06/21/2007DE10158706B4 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation
06/21/2007CA2633118A1 Alxgayin1-x-yn crystal substrate, semiconductor device, and method of manufacturing the same
06/20/2007EP1798773A2 Dual field plate MESFET
06/20/2007EP1798772A2 Thyristor optimised for HF sinusoidal signals
06/20/2007EP1798762A2 Semiconductor devices including implanted regions and protective layers and methods of forming the same
06/20/2007EP1797617A2 Ceramic antenna module and methods of manufacture thereof
06/20/2007EP1797592A1 Double gate device having a strained channel
06/20/2007EP1797585A1 Plasma enhanced nitride layer
06/20/2007EP1797584A2 Methods and devices for forming nanostructure monolayers and devices including such monolayers
06/20/2007EP1797582A2 Reduction of sheet resistance of phosphorus implanted poly-silicon
06/20/2007CN1985378A Nanoscale FET
06/20/2007CN1985377A Magnetic tunnel junction element structures and methods for fabricating the same
06/20/2007CN1985376A 绝缘栅双极晶体管 Insulated gate bipolar transistors
06/20/2007CN1985375A Structure and method of making strained channel CMOS transistors
06/20/2007CN1985374A Improved strained-silicon CMOS device and method
1 ... 1079 1080 1081 1082 1083 1084 1085 1086 1087 1088 1089 1090 1091 1092 1093 1094 1095 1096 1097 1098 1099 ... 2182