Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2012
10/31/2012EP2517230A1 Drive current enhancement in tri-gate mosfets by introduction of compressive metal gate stress using ion implantation
10/31/2012EP2517229A2 Semiconductor device having doped epitaxial region and its methods of fabrication
10/31/2012EP2517228A2 Method and apparatus for forming a dielectric layer on a substrate
10/31/2012EP2517227A2 Offset field grid for efficient wafer layout
10/31/2012EP2517226A1 Method and device for treating silicon substrates
10/31/2012EP2516340A2 Substrate for euvl optical member
10/31/2012EP1215724B1 Wire bonded semiconductor device with low capacitance coupling
10/31/2012DE19825081B4 Halbleiterdünnfilm und Halbleitervorrichtung und Herstellungsverfahren Semiconductor thin film and semiconductor device and manufacturing method
10/31/2012DE112011100120T5 Integrierte Hohlraumfüllung mit einer Silizium-Durchkontaktierung Integrated cavity filling using a Through-silicon via
10/31/2012DE112011100105T5 Abspaltung für ein halbleitersubstrat Cleavage of a semiconductor substrate
10/31/2012DE112010005185T5 Halbleiterwafer-Lagerbehälter Semiconductor wafer storage container
10/31/2012DE112010004710T5 Verfahren und Vorrichtung zum Steuern bzw. Regeln des Druckes in mehreren Zonen eines Prozesswekzeuges Method and apparatus for controlling the pressure in a plurality of zones of a Prozesswekzeuges
10/31/2012DE112010004463T5 Durch optische und thermische Energie vernetzbares Isolatorschichtmaterial für organischen Dünnschichttransistor By optical and thermal energy curable insulator layer material for organic thin film transistor
10/31/2012DE112010004165T5 Walzendruckvorrichtung Roller pressure device
10/31/2012DE112010003659T5 Leitfähige Struktur für schmale Verbindungsöffnungen Conductive structure for narrow connecting openings
10/31/2012DE112010003451T5 Selektives Züchten von Nanoröhren innerhalb von Durchgangskontakten unter Verwendungeines lonenstrahls Selective growth of nanotubes within passage contacts using one ion beam
10/31/2012DE112005000775B4 Halbleiter-auf-Isolator-Substrat und daraus hergestellte Bauelemente Semiconductor-on-insulator substrate and derived components
10/31/2012DE102012206024A1 Verfahren zum Bilden oxideingekapselter leitfähiger Merkmale A method of forming conductive features oxideingekapselter
10/31/2012DE102012205879A1 Siliciumcarbid-Halbleitervorrichtung Silicon carbide semiconductor device
10/31/2012DE102012103623A1 Method for forming oxide layer on substrate e.g. silicon-on-insulator substrate, for manufacturing e.g. mobile telephone, involves oxidizing precursory layer of certain material to obtain oxide layer of certain material
10/31/2012DE102012007812A1 Chemisch-mechanische Polierzusammensetzung und Verfahren zum Polieren von Phasenänderungslegierungen The chemical mechanical polishing composition and methods for polishing of phase change alloys
10/31/2012DE102012007811A1 Chemisch-mechanische Polierzusammensetzung und Verfahren zum Polieren von Germanium-Antimon-Tellur-Legierungen The chemical mechanical polishing composition and methods for polishing of germanium-antimony-tellurium alloys
10/31/2012DE102011100056A1 Verfahren zur Festphasen-Kristallisation einer amorphen oder polykristallinen Schicht Method for solid-phase crystallization of amorphous or polycrystalline layer
10/31/2012DE102011100055A1 Plasma treatment device, useful for carrying substrates in a process chamber, comprises rod element comprising first end and opposite second end, carrier element arranged at first end of rod element, and first source of radiation
10/31/2012DE102011100024A1 Verfahren zum ausbilden einer schicht auf einem substrat A method for forming a layer on a substrate
10/31/2012DE102011079247A1 Method for conveying thin, two-dimensionally extended workpiece e.g. semiconductor wafer, involves flowing pressurized gas through outflow opening formed in flat side, during acceleration phase of supporting surface
10/31/2012DE102011075025A1 Verfahren und Vorrichtung zum Aufbringen von Drucksubstanz Method and apparatus for applying pressure substance
10/31/2012DE102011075009A1 Auf einem Träger angeordnete Kontaktfläche zur Verbindung mit einer auf einem weiteren Träger angeordneten Gegenkontaktfläche und Vorrichtung mit einer Kontaktfläche und einer damit verbundenen Gegenkontaktfläche Arranged on a carrier contact face for connection to a further carrier which is arranged on a counter-contact surface, and with a contact surface and an associated counter-contact surface
10/31/2012DE102011075001A1 Transmitted light vacuum chuck has light transmissive platen that is made of porous material having multiple communicating pores which form gas passage channels
10/31/2012DE102011018851A1 Connection-less building block e.g. quad-flat no-leads building block has contacts with through hole, which is extended along vertical dimension of lower surface along transverse complete vertical dimension of contact
10/31/2012DE102011017790A1 Leuchtvorrichtung und Verfahren zum Herstellen einer Leuchtvorrichtung A lighting apparatus and method for manufacturing a lighting device
10/31/2012DE102011017700A1 Manufacturing method of semiconductor device e.g. acceleration sensor, involves positioning separator component in chamber to separate specific region between substrates, such that water molecule is hardly passed through component
10/31/2012DE102011017521A1 Elektrische Anordnung mit Beschichtung und Getriebeanordnung mit einer solchen Anordung An electrical assembly with coating and gear arrangement with such arrangement
10/31/2012DE102011005718B4 Verfahren zum Verringern der Äquivalenzdicke von Dielektriika mit großem ε in Feldeffekttranistoren durch Ausführen eines Ausheizprozesses bei geringer Temperatur A method for reducing the equivalent thickness of Dielektriika with large ε in Feldeffekttranistoren by performing an anneal at low temperature
10/31/2012DE102010035296B4 Randabschlussstruktur für Transistoren mit hohen Durchbruchspannungen Edge termination structure for transistors with high breakdown voltages
10/31/2012DE102010002411B4 Verfahren zur Herstellung von Kontaktbalken mit reduzierter Randzonenkapazität in einem Halbleiterbauelement A process for the production of contact beams with reduced edge zone capacity in a semiconductor device
10/31/2012DE102009047307B4 Verfahren zur Vergrößerung der Stabilität eines Gatedielektrikums mit großem ε in einem Gatestapel mit großem ε durch eine sauerstoffreiche Titannitriddeckschicht A method for increasing the stability of a gate dielectric with a large ε in a gate stack with large ε by an oxygen-rich Titannitriddeckschicht
10/31/2012DE102008060275B4 Verfahren zum Strukturieren eines gebondeten Wafers Method for structuring a bonded wafer
10/31/2012DE102008010318B4 Verfahren zur Bildung einer Nitrid-Halbleiterschicht auf strukturiertem Substrat und Licht emittierende Diode umfassend eine solche A method of forming a nitride semiconductor layer on a structured substrate and light emitting diode comprising such
10/31/2012DE102005030322B4 Waferunterteilungsverfahren Wafer dividing method
10/31/2012CN202513194U Substrate conveying system
10/31/2012CN202513135U Semiconductor basement
10/31/2012CN202513134U Reduction jig of silicon wafer with copper bumps by through hole electroplating
10/31/2012CN202513133U Direct drive taking-putting device with low inertia and light moving mass
10/31/2012CN202513132U Quartz boat
10/31/2012CN202513131U Combined structure of wafer box cover and wafer channel section
10/31/2012CN202513130U Metal load-bearing box preventing silicon slice from sliding
10/31/2012CN202513129U Worktable structure for packaging equipment of vertical electrode pin direct insertion type lead frame
10/31/2012CN202513128U Acid washing tray for diode core bodies
10/31/2012CN202507488U Automatic cutting (removing) device for plastic package material residue of molding machine
10/31/2012CN202506626U Rinsing device and etching equipment
10/31/2012CN102763494A Conductor structural element and method for producing a conductor structural element
10/31/2012CN102763487A Induction heating device
10/31/2012CN102763331A Nonvolatile latch circuit, nonvolatile flip-flop circuit and nonvolatile signal processing device
10/31/2012CN102763230A Method and device for producing a semiconductor layer
10/31/2012CN102763222A Field-effect transistor and method for manufacturing same
10/31/2012CN102763219A Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming
10/31/2012CN102763214A 半导体器件 Semiconductor devices
10/31/2012CN102763213A Thin-film transistor device manufacturing method, thin-film transistor device, and display device
10/31/2012CN102763212A Methods and apparatus for deposition processes
10/31/2012CN102763211A Sheet for protecting surface of semiconductor wafer, semiconductor device manufacturing method and semiconductor wafer protection method using sheet
10/31/2012CN102763210A Substrate processing system and substrate transferring method
10/31/2012CN102763209A Transfer apparatus, transfer method, exposure apparatus, and device manufacturing method
10/31/2012CN102763208A Device for forming a reduced chamber space, and method for positioning multilayer bodies
10/31/2012CN102763207A Support system for a semiconductor device
10/31/2012CN102763206A Module manufacturing method
10/31/2012CN102763205A High frequency module manufacturing method
10/31/2012CN102763204A Compound semiconductor device and method for manufacturing same
10/31/2012CN102763203A Method for manufacturing semiconductor device
10/31/2012CN102763202A Semiconductor device and method for manufacturing the same
10/31/2012CN102763201A High efficiency high accuracy heater driver
10/31/2012CN102763200A A microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure
10/31/2012CN102763199A Process chamber gas flow improvements
10/31/2012CN102763198A Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor
10/31/2012CN102763197A Arrangements for manipulating plasma confinement within a plasma processing system and methods thereof
10/31/2012CN102763196A Method for cleaning a substrate, and semiconductor manufacturing device
10/31/2012CN102763195A Semiconductor block bonding apparatus, semiconductor block bonding method, and semiconductor wafer manufacturing method
10/31/2012CN102763194A System and method for doping semiconductor materials
10/31/2012CN102763193A Semiconductor device manufacturing method, substrate manufacturing method, and substrate processing apparatus
10/31/2012CN102763192A Crystalline film, device, and production methods for crystalline film and device
10/31/2012CN102763191A Method of eliminating fragments of material present on the surface of a multilayer structure
10/31/2012CN102763175A Electric resistance element suitable for light-emitting diode, laser diodes or photodetectors
10/31/2012CN102762770A Etching solution for multilayer thin film having copper layer and molybdenum layer contained therein
10/31/2012CN102762767A Atomic layer deposition chamber with multi inject
10/31/2012CN102762763A Vapor deposition methods of SICOH low-K films
10/31/2012CN102762639A Method for oligomerizing hydridosilanes, the oligomers that can be produced by means of the method, and the use thereof
10/31/2012CN102762627A Two-liquid mixing first and second liquids and method for producing printed circuit board
10/31/2012CN102762525A Method for producing semiconductor gas
10/31/2012CN102762519A Sintered objects and processes for producing same
10/31/2012CN102762352A Method for injection moulding an external housing of an object, object and apparatus for injection moulding
10/31/2012CN102762338A Method for designing resin-coated saw wire
10/31/2012CN102760934A Conductive paste for thick film circuit, thick film circuit board employing same and manufacturing method thereof
10/31/2012CN102760775A Capacitor and manufacturing method thereof
10/31/2012CN102760773A NVN (Non-Volatile Memory) device and manufacturing method thereof
10/31/2012CN102760769A Through silicon via processing techniques for lateral double-diffused mosfets
10/31/2012CN102760768A Silicon carbide semiconductor device
10/31/2012CN102760765A Embedded type source/drain MOS (Metal Oxide Semiconductor) transistor and forming method thereof
10/31/2012CN102760763A MOS (Metal Oxide Semiconductor) device with groove structure and super-node structure and manufacturing method thereof
10/31/2012CN102760762A Semiconductor device and manufacture method thereof
10/31/2012CN102760757A Integrated circuit structure including copper-aluminum interconnect and method for fabricating the same
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