H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
11/1988
11/23/1988	EP0292235A2 Manipulator apparatus with linear drive for sealed standard mechanical interface apparatus
11/23/1988	EP0292148A2 Charge pump circuitry having low saturation voltage and current-limited switch
11/23/1988	EP0292136A1 Method and process for testing the reliability of integrated circuit (IC) chips and novel IC circuitry for accomplishing same
11/23/1988	EP0292125A1 Multi-layer superconducting circuit substrate and process for manufacturing same
11/23/1988	EP0292119A2 Floating crown for insertion-extraction head
11/23/1988	EP0292116A2 Test system for vlsi circuits
11/23/1988	EP0292092A2 Method of routing connections between terminals
11/23/1988	EP0292090A2 Rinser dryer system
11/23/1988	EP0292059A2 Modular resin-encapsulated multi-chip circuit package and its manufacturing method
11/23/1988	EP0292057A1 Method of manufacturing a semiconductor comprising a titanium-tungsten layer
11/23/1988	EP0292042A1 Semiconductor fabrication process using sacrificial oxidation to reduce tunnel formation during tungsten deposition
11/23/1988	EP0292029A1 Semiconductor laser device and method of manufacturing same
11/23/1988	EP0292015A1 Semiconductor power element
11/23/1988	EP0292011A2 Input circuit of charge transfer device
11/23/1988	EP0291779A2 Heat-resistant positive resist, and process for the production of heat-resistant resist patterns
11/23/1988	EP0291690A2 Device for loading work pieces to and from a coating chamber
11/23/1988	EP0291670A1 Vapor phase photoresist silylation process
11/23/1988	EP0291647A2 High resolution electron beam lithographic technique
11/23/1988	CN88102545A Multi-layer superconducting circuit substrate and process for manufacturing same
11/22/1988	US4786962 Tungsten suppresses formation of hillocks in underlying aluminum layer; also acts as etch stop
11/22/1988	US4786960 CMOS integrated circuit and process for producing an electric isolation zones in said integrated circuit
11/22/1988	US4786958 Lateral dual gate thyristor and method of fabricating same
11/22/1988	US4786954 Dynamic ram cell with trench surrounded switching element
11/22/1988	US4786947 Projection exposure apparatus
11/22/1988	US4786887 Thin-film strain gauge system and method of manufacturing same
11/22/1988	US4786867 Wafer prober
11/22/1988	US4786864 Photon assisted tunneling testing of passivated integrated circuits
11/22/1988	US4786860 Missing wire detector
11/22/1988	US4786828 Bias scheme for achieving voltage independent capacitance
11/22/1988	US4786827 Antisaturation circuit for integrated PNP transistor with intervention characteristic definable according to a preset function
11/22/1988	US4786816 Wafer detecting device wherein light receiver has an effective surface larger than the dimensional range covering all the wafers being detected
11/22/1988	US4786780 Method for trimming thin-film transistor array
11/22/1988	US4786674 Diffusion isolation layer for maskless cladding process
11/22/1988	US4786615 Growing superimposed silicon layers at temperatures above and below transition point
11/22/1988	US4786614 Method of fabricating a high voltage semiconductor device having a pair of V-shaped isolation grooves
11/22/1988	US4786613 Method of combining gate array and standard cell circuits on a common semiconductor chip
11/22/1988	US4786612 Plasma enhanced chemical vapor deposited vertical silicon nitride resistor
11/22/1988	US4786611 Adjusting threshold voltages by diffusion through refractory metal silicides
11/22/1988	US4786610 Method of making a monolithic integrated circuit comprising at least one bipolar planar transistor
11/22/1988	US4786609 Method of fabricating field-effect transistor utilizing improved gate sidewall spacers
11/22/1988	US4786608 Heating amorphous doped layer to form polycrystalline layer adjacent to buried layer; semiconductors
11/22/1988	US4786545 For mechanical and electrical attachment to conductive pads
11/22/1988	US4786479 Apparatus for dendritic web growth systems
11/22/1988	US4786477 Vapor deposition
11/22/1988	US4786361 Dry etching process
11/22/1988	US4786360 Anisotropic etch process for tungsten metallurgy
11/22/1988	US4786359 Xenon enhanced plasma etch
11/22/1988	US4786358 Method for forming a pattern of a film on a substrate with a laser beam
11/22/1988	US4786352 Apparatus for in-situ chamber cleaning
11/22/1988	US4786166 Determination of focal plane for a scanning projection aligner
11/22/1988	US4785962 Vacuum chamber slit valve
11/22/1988	US4785763 Apparatus for the formation of a functional deposited film using microwave plasma chemical vapor deposition process
11/22/1988	CA1245373A1 Sidewall spacers for cmos circuit stress relief/isolation and method for making
11/22/1988	CA1245372A1 Bipolar semiconductor device and mos circuit incorporating such a device
11/22/1988	CA1245370A1 Temperature stable self-protected thyristor and method of producing
11/22/1988	CA1245369A1 Signal ground planes for tape bonded devices
11/22/1988	CA1245183A1 Method and apparatus for making electrophotographic devices
11/22/1988	CA1245109A1 Method of forming amorphous polymeric halosilane films and products produced therefrom
11/17/1988	WO1988009060A1 Silicon electroluminescent device
11/17/1988	WO1988009059A1 Charge-coupled device with focused ion beam fabrication
11/17/1988	WO1988009057A1 Two-terminal semiconductor diode arrangement
11/17/1988	WO1988009056A1 Wire bonds and electrical contacts of an integrated circuit device
11/17/1988	WO1988009054A1 Electrostatic chuck using ac field excitation
11/17/1988	WO1988009053A1 Process and installation for determining the thickness of layers in layered semi-conductors
11/17/1988	WO1988009049A1 Mask repair using an optimized focused ion beam system
11/17/1988	WO1988009037A1 Cmos-ram store on a gate array arrangement
11/17/1988	WO1988008965A2 Temperature-measurement device for semiconductors, process for its manufacture and process for measuring the temperature of semiconductors during annealing processes
11/17/1988	WO1988008786A1 System for controlling apparatus for growing tubular crystalline bodies
11/17/1988	EP0291346A2 A laminated structure of compound semiconductors
11/17/1988	EP0291279A1 System and methods for wafer charge reduction for ion implantation
11/17/1988	EP0291276A2 Locating and testing areas of interest on a workpiece
11/17/1988	EP0291273A2 Reflector apparatus for chemical vapor deposition reactors
11/17/1988	EP0291242A2 Protection system for CMOS integrated circuits
11/17/1988	EP0291192A2 Hardware switch level simulator for MOS circuits
11/17/1988	EP0291181A2 Plasma reactor for CVD
11/17/1988	EP0291147A1 Vertical thermal processor
11/17/1988	EP0291144A1 Burn-in board loader and unloader
11/17/1988	EP0291118A1 Charge-coupled device
11/17/1988	EP0291062A1 Reference potential generating circuit
11/17/1988	EP0291014A2 Semiconductor device in which wiring layer is formed below bonding pad
11/17/1988	EP0290857A1 A bias device for achieving voltage independent capacitance
11/17/1988	EP0290763A1 High performance sidewall emitter transistor
11/17/1988	EP0290672A1 A semiconductor integrated circuit device
11/17/1988	EP0290578A1 Tungsten paste for co-sintering with pure alumina and method for producing same.
11/17/1988	EP0290501A1 Method and apparatus for packaging integrated circuit chips employing a polymer film overlay layer.
11/17/1988	EP0290445A1 Apparatus incorporating phase conjugate mirrors
11/17/1988	EP0290444A1 Apparatus and methods for effecting a burn-in procedure on semiconductor devices
11/17/1988	EP0185016B1 Method of applying poly(methacrylic anhydride) resist to a semiconductor
11/17/1988	EP0165971B1 Method of making a bipolar junction transistor
11/17/1988	DE3715431A1 Method of producing a patterned metal contact on a semiconductor wafer
11/17/1988	DE3715232A1 Method of substrate connection in the fabrication of bipolar transistor circuits separated by isolation trenches
11/16/1988	CN88102547A Charge-coupled device
11/15/1988	US4785344 Semi-conductor component with contact hole
11/15/1988	US4785343 MIS FET semiconductor device with improved leakage current
11/15/1988	US4785342 Static random access memory having structure of first-, second- and third-level conductive films
11/15/1988	US4785341 Using metal silicide
11/15/1988	US4785340 Semiconductor device having doping multilayer structure
11/15/1988	US4785337 Dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes
11/15/1988	US4785279 Integrated circuit resistor having balanced field plate
11/15/1988	US4785202 Semiconductor integrated circuit device having an integrally formed bypass capacitor

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