Patents
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
12/2006
12/28/2006WO2006137833A1 Nanoscale content-addressable memory
12/28/2006WO2006137111A1 Nonvolatile semiconductor storage device and write method therefor
12/28/2006WO2006137110A1 Nonvolatile semiconductor storage device and write method therefor
12/28/2006US20060289908 Field effect device with a channel with a switchable conductivity
12/28/2006DE102006030749A1 Phase change random access memory device, has word line driver including precharge device and discharge device, where precharge device and discharge device are alternately located between set of memory cell blocks
12/27/2006EP1736760A2 Nanosensors
12/27/2006CN1886815A Phase angle controlled stationary elements for long wavelength electromagnetic radiation
12/27/2006CN1886802A Magneto-optical storage medium
12/27/2006CN1292043C Method for preparing electron trapping materials with reactant carbon as reducing agent
12/26/2006US7154788 Semiconductor integrated circuit device
12/26/2006US7154645 Holographic recording method and apparatus
12/26/2006US7153721 Resistance variable memory elements based on polarized silver-selenide network growth
12/21/2006WO2006134732A1 Semiconductor storage apparatus
12/21/2006WO2006102391A3 Temperature compensation of thin film diode voltage threshold in memory sensing circuit
12/21/2006WO2006094038A3 Carbon nanotube resonator transistor and method of making the same
12/21/2006DE102005030142B3 Non-volatile memory cell for shift register, has bistable flip-flop for volatile storage of binary information, and single binary programmable resistor securing information stored in flip-flop, during transition into power-down mode
12/20/2006EP1734594A2 Molecular electronic device
12/20/2006EP1733398A2 Circuit for accessing a chalcogenide memory array
12/20/2006CN1882860A A method of optical data storage
12/19/2006US7151273 Silver-selenide/chalcogenide glass stack for resistance variable memory
12/19/2006US7151029 Memory device and method of making the same
12/14/2006WO2006133419A1 Method of programming a memory device with different levels of current
12/14/2006WO2006132813A1 Memory device with switching glass layer
12/14/2006US20060280010 Storage device
12/13/2006EP1730746A2 Creation of electron traps in metal nitride and metal oxide electrodes in polymer memory devices
12/12/2006US7149155 Channeled dielectric re-recordable data storage medium
12/12/2006US7149108 Memory array of a non-volatile RAM
12/12/2006US7149107 Providing a reference voltage to a cross point memory array
12/12/2006US7149103 Set programming methods and write driver circuits for a phase-change memory array
12/12/2006US7149100 Serial transistor-cell array architecture
12/12/2006US7148533 Memory resistance film with controlled oxygen content
12/07/2006US20060274630 Apparatus and method for compensating wobble in holographic digital data storage system
12/07/2006US20060274593 Semiconductor integrated circuit device
12/07/2006US20060274574 Phase-change memory device and method of writing a phase-change memory device
12/07/2006US20060273262 Light stimulating and collecting methods and apparatus for storage-phosphor image plates
12/07/2006DE102005024897A1 Non-volatile memory cell e.g. flash memory cell, for semiconductor device, has transistors reducing leakage currents that flow through non-volatile programmable resistors, respectively
12/06/2006EP1729356A1 Switching device
12/06/2006EP1728286A1 An organic electronic device and methods for manufacturing a device of this kind
12/06/2006CN1288744C Method of fabricating 1t1r resistive memory array
12/05/2006US7145794 Programmable microelectronic devices and methods of forming and programming same
12/05/2006US7145793 Electrically addressable memory switch
12/05/2006US7145791 Memory device having variable resistive memory element
12/05/2006US7145790 Phase change resistor cell and nonvolatile memory device using the same
12/05/2006US7144683 Photopatternable molecular circuitry
11/2006
11/30/2006WO2006033681A3 Receiver circuit using nanotube-based switches and logic
11/30/2006US20060268606 Nano tube cell, and semiconductor device having nano tube cell and double bit line sensing structure
11/30/2006US20060268603 Programming method for non-volatile memory
11/30/2006US20060268594 Programmable resistance memory device
11/29/2006EP1727151A1 Method for operating a PMC memory and CBRAM memory circuit
11/29/2006EP1726017A1 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
11/29/2006EP0931259B1 System for synthesizing a library of compounds and use thereof
11/29/2006CN1287459C Memory device utilizing carbon nanotubes and method of fabricating the memory device
11/29/2006CN1287420C PCMO thin-membrane low-temperature treatment on Ir base-material for RRAM application
11/28/2006US7142450 Programmable sub-surface aggregating metallization structure and method of making same
11/28/2006US7141481 Method of fabricating nano-scale resistance cross-point memory array
11/23/2006WO2006124235A1 Resistive memory device with improved data retention and reduced power
11/23/2006US20060263033 Switchable surfaces
11/23/2006US20060260674 Nano ic
11/22/2006EP1724785A1 A nanowire-based memory capacitor and memory cell and methods for fabricating them
11/22/2006EP1723676A2 Nano-enabled memory devices and anisotropic charge carrying arrays
11/22/2006EP1723534A2 Data sampling clock edge placement training for high speed gpu-memory interface
11/22/2006CN1868002A Nanotube-based switching elements with multiple controls and circuits made from same
11/22/2006CN1866570A 存储器件和半导体器件 Memory device and semiconductor device
11/22/2006CN1866077A Fourier transform optical system and volume holographic storage Fourier transform optical system
11/22/2006CN1286097C Device and method for compensation of wow flutter in holographic digital data memory system
11/21/2006US7138832 Nanotube-based switching elements and logic circuits
11/21/2006US7138687 Thin film phase-change memory
11/21/2006CA2226268C Optical storage system
11/16/2006WO2006120903A1 Nonvolatile semiconductor storage device
11/16/2006US20060258079 Thin film phase-change memory
11/16/2006US20060257873 Chemical switching of nucleic acid circuit elements
11/16/2006US20060257657 Nanotube based non-linear optics and methods of making same
11/15/2006CN1864253A 非易失性存储装置 Nonvolatile memory device
11/15/2006CN1864230A Self assembly of conducting polymer for formation of polymer memory cell
11/14/2006US7136212 Molecular architecture for molecular electro-optical transistor and switch
11/09/2006WO2006118800A1 Design and operation of a resistance switching memory cell with diode
11/09/2006WO2006094867A8 Method for manufacturing an electrolyte material layer in semiconductor memory devices
11/09/2006US20060252276 Method of fabricating memory device utilizing carbon nanotubes
11/09/2006US20060250932 Optical information storage unit
11/09/2006US20060250885 Initial firing method and phase change memory device for performing firing effectively
11/09/2006US20060250872 AC sensing for a resistive memory
11/08/2006EP1720158A2 Hologram recording method and apparatus
11/08/2006EP1417352A4 Electronic detection of biological molecules using thin layers
11/08/2006CN1284162C Overlapped light waveguide 3-D data memory able to even readout and data recording method
11/07/2006US7133031 Optical system design for a universal computing device
11/02/2006WO2006116552A1 Three-dimensional nanoscale crossbars
11/02/2006WO2006116534A2 Nanoscale interconnection interface
11/02/2006WO2006115980A1 Multiplexer interface to a nanoscale-crossbar
11/02/2006WO2006115208A1 Memory device and semiconductor integrated circuit
11/02/2006US20060245243 Multi-resistive state element with reactive metal
11/02/2006US20060245234 Method of operating a complementary bit resistance memory sensor and method of operation
11/02/2006US20060245227 Serial transistor-cell array architecture
11/02/2006US20060243956 Cross point memory array with fast access time
11/02/2006EP1717862A2 Memory device and semiconductor device
11/02/2006DE10250829B4 Nichtflüchtige Speicherzelle, Speicherzellen-Anordnung und Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle A non-volatile memory cell, memory cell arrangement and method of manufacturing a non-volatile memory cell
11/01/2006CN1856865A Memory cell and method for producing a memory
10/2006
10/31/2006US7130214 Low-current and high-speed phase-change memory devices and methods of driving the same
10/31/2006US7130212 Field effect device with a channel with a switchable conductivity
10/31/2006US7129554 Nanosensors
10/31/2006US7129503 Determining emitter beam size for data storage medium
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