Patents
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
03/2006
03/01/2006EP1628907A1 Nanoelectromechanical transistors and switch systems
03/01/2006CN1742343A Organic storage component and corresponding triggering circuit
03/01/2006CN1740171A Second order non-linear optical chromophore containing indolyl radical and its prepn and application
02/2006
02/28/2006US7006371 Semiconductor memory device and method for programming and erasing a memory cell
02/28/2006US7005665 Phase change memory cell on silicon-on insulator substrate
02/28/2006US7005237 Method of making information storage devices by molecular photolithography
02/22/2006CN1739147A Hologram recording method, hologram recording reproduction method, hologram recording device, hologram recording/reproduction device, and hologram reproduction device
02/21/2006US7002891 Apparatus and method for recording and reproducing information to and from an optical storage medium
02/21/2006US7002837 Non-volatile semiconductor memory device
02/21/2006US7002833 Complementary bit resistance memory sensor and method of operation
02/21/2006US7001846 High-density SOI cross-point memory array and method for fabricating same
02/16/2006WO2005084164A3 Nanotube-based switching elements and logic circuits
02/16/2006US20060035451 High-density SOI cross-point memory fabricating method
02/16/2006US20060034112 Data read circuit for use in a semiconductor memory and a method therefor
02/16/2006US20060033182 Method of fabricating a 3D RRAM
02/16/2006DE102004035830A1 Speicherbauelement mit thermischen Isolationsschichten Memory device with thermal insulation layers
02/15/2006CN1734674A Symmetric bit line compensation method for write current in phase change memory array
02/15/2006CN1734671A Phase change memories and/or methods of programming phase change memories using sequential reset control
02/15/2006CN1734588A Speckle multiplexing with improved tracking
02/14/2006US6999214 Apparatus and method for detecting holographic data reproduced from a holographic media
02/14/2006US6998698 Memory cell with a perovskite structure varistor
02/14/2006US6998637 Circuit element having a first layer composed of an electrically insulating substrate material, a method for producing a circuit element, bispyridinium compounds and their use in circuit elements
02/14/2006US6998634 Memory device utilizing vertical nanotubes
02/14/2006US6998333 Method for making nanoscale wires and gaps for switches and transistors
02/14/2006US6998312 Microelectronic programmable device and methods of forming and programming the same
02/09/2006WO2006014890A2 Binary beam steering device
02/09/2006WO2006013819A1 Resistance change element and resistance change type memory using the same
02/09/2006WO2006013519A1 Method of storing data in an information carrier, system for reading such an information carrier.
02/09/2006WO2006013138A1 Method for forming memory layers
02/09/2006WO2005072355A3 Data sampling clock edge placement training for high speed gpu-memory interface
02/09/2006US20060028886 Control of set/reset pulse in response to peripheral temperature in PRAM device
02/09/2006DE112004000423T5 Aufschleuder-Polymere für organische Speicherelemente Spin-on polymers for organic memory elements
02/09/2006DE10013013B4 Chemisch synthetisierte und aufgebaute elektronische Bauelemente Chemically synthesized and structured electronic components
02/08/2006EP1623429A1 Skewed sense amp for variable resistance memory sensing
02/07/2006US6995999 Nonvolatile semiconductor memory device and control method thereof
02/07/2006US6995416 Memory device for storing electrical charge and method for fabricating the same
02/07/2006US6995388 Phase changeable memory devices and methods of forming the same in which an upper electrode includes a tip that extends toward a lower electrode
02/07/2006US6995312 Bistable molecular switches and associated methods
02/07/2006US6995046 Process for making byte erasable devices having elements made with nanotubes
02/02/2006US20060023532 Method of operating a complementary bit resistance memory sensor
02/02/2006US20060023495 High-density NVRAM
02/01/2006EP1622163A1 Nonvolatile semiconductor memory device and read method
02/01/2006EP1621977A2 Optical system design for a universal computing device
02/01/2006CN1729542A 光信息存储单元 The optical information storage unit
02/01/2006CN1729411A Visual effect based on a micro-optical grid structure
01/2006
01/31/2006US6992922 Cross point memory array exhibiting a characteristic hysteresis
01/31/2006US6992920 Nonvolatile semiconductor memory device, and programming method and erasing method thereof
01/31/2006US6992323 Memory cell
01/26/2006WO2005089465A3 Electromechanical three-trace junction devices
01/26/2006US20060018182 Solid state microoptoelectromechanical system (moens) for reading photonics diffractive memory
01/25/2006CN1726562A CMIS semiconductor nonvolatile storage circuit
01/25/2006CN1725369A Storage mode and circuit using ratio as station guide
01/24/2006US6990044 Composite memory device
01/24/2006US6990009 Nanotube-based switching elements with multiple controls
01/24/2006US6990008 Switchable capacitance and nonvolatile memory device using the same
01/24/2006US6989185 Optical memory
01/19/2006WO2006007203A2 Nanotube-based logic driver circuits
01/19/2006WO2006007196A2 Nanotube-based transfer devices and related circuits
01/19/2006US20060013104 Hologram apparatus and hologram recording method
01/19/2006US20060012668 Spatial optical memory
01/19/2006US20060011972 Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cell
01/19/2006US20060011897 Memory resistance film with controlled oxygen content
01/19/2006DE102004031135A1 Resistives Halbleiterelement basierend auf einem Festkörperionenleiter The resistive semiconductor element based on a solid ionic conductors
01/18/2006EP1617437A1 Phase change memory device and programming and controlling methods
01/18/2006EP1617422A1 Speckle multiplexing with improved tracking
01/18/2006CN1723497A Optical information record medium
01/18/2006CN1722488A Thin film phase-change memory
01/18/2006CN1722302A Memory device
01/18/2006CN1237165C Active device and method for molecular biological analysis and diagnostics
01/17/2006US6987689 Non-volatile multi-stable memory device and methods of making and using the same
01/17/2006US6986876 Method for forming composites of sub-arrays of single-wall carbon nanotubes
01/12/2006WO2006003537A2 Apparatus for reading an information carrier
01/12/2006US20060007769 Adaptive programming technique for a re-writable conductive memory device
01/11/2006CN1720625A Method for the production of a memory cell, memory cell and memory cell arrangement
01/10/2006US6985389 Phase change based memory device and method for operating same
01/10/2006US6985378 Programmable microelectronic device, structure, and system and method of forming the same
01/10/2006US6985376 Nonvolatile semiconductor storage apparatus having reduced variance in resistance values of each of the storage states
01/10/2006US6985373 Binary beam steering device
01/10/2006US6985276 Magnetooptic element exploiting spin chirality
01/10/2006US6984548 Method of making a nonvolatile memory programmable by a heat induced chemical reaction
01/05/2006WO2006000980A1 Phase-conjugate read-out in a holographic data storage
01/05/2006US20060001943 Molecular architecture for molecular electro-optical transistor and switch
01/04/2006EP1612805A1 Writing method of variable resistance memory device
01/04/2006EP1210714A4 High density non-volatile memory device
01/04/2006CN1717748A Method of driving a non-volatile memory
01/04/2006CN1717317A Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
01/04/2006CN1716608A Memory gain cells and method for producing the same
01/03/2006US6982913 Data read circuit for use in a semiconductor memory and a memory thereof
01/03/2006US6982903 Field effect devices having a source controlled via a nanotube switching element
12/2005
12/29/2005WO2005124788A2 Nanoscale programmable structures and methods of forming and using same
12/29/2005WO2005124751A1 Optical multi-layer information medium
12/29/2005US20050287717 Methods and devices for forming nanostructure monolayers and devices including such monolayers
12/29/2005US20050286294 Resistance variable memory elements based on polarized silver-selenide network growth
12/29/2005US20050286293 Horizontal memory gain cells
12/29/2005US20050286211 Solid electrolyte switching element
12/29/2005US20050285096 Programmable structure, an array including the structure, and methods of forming the same
12/29/2005US20050285095 Resistive semiconductor element based on a solid-state ion conductor
12/29/2005DE20321085U1 Phase change memory has switching region along lateral extent of memory between contacts; current passes through switching region along lateral extent; switching region lies in memory material layer if there is constriction between contacts
12/29/2005DE102004024610B3 Festkörperelektrolytschaltelement Solid electrolyte switching element
12/28/2005EP1609188A2 Nanotube-on-gate fet structures and applications
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