Patents
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
05/2006
05/04/2006WO2006045783A1 Printable organic non-volatile passive memory element and method of making thereof
05/04/2006WO2006045764A1 Printable organic non-volatile passive memory element and method of makin thereof
05/04/2006US20060094187 Method of changing an electrically programmable resistance cross point memory bit
05/04/2006DE102004051152A1 NOR- und NAND-Speicheranordnung von resistiven Speicherelementen NOR and NAND memory array of resistive memory elements
05/02/2006US7038961 Semiconductor device
05/02/2006US7038938 Phase change resistor cell and nonvolatile memory device using the same
05/02/2006US7038935 2-terminal trapped charge memory device with voltage switchable multi-level resistance
05/02/2006US7038878 Micromover configured to move a magnetic storage medium in perpendicular directions in a plane
04/2006
04/27/2006WO2006043687A1 Semiconductor device
04/27/2006WO2006043611A1 Semiconductor device
04/27/2006US20060086994 Nanoelectromechanical components
04/26/2006EP1649526A2 High-temperature attachment of organic molecules to substrates
04/25/2006US7035140 Organic-polymer memory element
04/25/2006US7033674 Electrical devices employing molten compositions of biomolecules
04/20/2006WO2006040231A1 Holographic system, in particular for holographic data storage
04/20/2006WO2005036599A3 Non-volatile memory device
04/20/2006US20060083055 Providing a reference voltage to a cross point memory array
04/20/2006US20060081950 Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device
04/19/2006EP1647522A2 Nanoelectromechanical transistors and switch systems
04/19/2006EP1159761A4 Nanostructure device and apparatus
04/19/2006CN1252686C Method for distribution of data marks on medium, and method and apparatus for the holographic recording and readout of data
04/19/2006CN1252682C Magnetic medium of rotary polar electronic and device and method of recording data on it
04/19/2006CN1251962C Method of horizontal growth of carbon nanotube and field effect transistor using carbon nanotube
04/18/2006US7030456 Resistance-changing function body, memory element, manufacturing method therefor, memory device, semiconductor device and electronic equipment
04/18/2006US7030408 Molecular wire transistor (MWT)
04/18/2006US7029924 Buffered-layer memory cell
04/13/2006WO2006037279A1 Recording medium for three dimension operating memory
04/13/2006DE102004047638A1 Nichtflüchtige Speicherzelle und Verfahren zum Betreiben einer nichtflüchtigen Speicherzelle A non-volatile memory cell and method for operating a non-volatile memory cell
04/13/2006DE102004041555A1 Manufacturing molecular memory fields involves depositing, structuring lower electrode(s)/conducting track(s) on substrate, depositing electrically active self-organized monolayer, bringing substrate into contact with conductive material
04/12/2006EP1204853A4 Inorganic permeation layer for micro-electric device
04/12/2006CN1759482A Phase change memory device
04/12/2006CN1759451A Spin on polymers for organic memory devices
04/12/2006CN1759450A Programmable resistance memory device
04/11/2006US7027342 Semiconductor memory device
04/11/2006US7027327 Non-volatile memory
04/11/2006US7027322 EPIR device and semiconductor devices utilizing the same
04/11/2006US7026911 Point contact array, not circuit, and electronic circuit comprising the same
04/11/2006US7026702 Memory device
04/06/2006WO2006035610A1 Function element, storage element, magnetic recording element, solar cell, photoelectric conversion element, light emitting element, catalyst reaction device, and clean unit
04/06/2006US20060075418 Optical information record medium
04/05/2006EP1643508A2 Non-volatile memory element with programmable resistance
04/05/2006EP1642349A1 Memory device and methods of using and making the device
03/2006
03/30/2006WO2006033683A2 Receiver circuit using nanotube-based switches and transistors
03/30/2006WO2006033681A2 Receiver circuit using nanotube-based switches and logic
03/30/2006WO2005048296A3 Nanotube-based switching elements with multiple controls and circuits made from same
03/28/2006US7020355 Switchable surfaces
03/28/2006US7020037 Nonvolatile semiconductor memory device
03/28/2006US7020012 Cross point array using distinct voltages
03/28/2006US7020006 Discharge of conductive array lines in fast memory
03/28/2006US7020003 Device and method for compensating defect in semiconductor memory
03/28/2006US7019391 NANO IC packaging
03/28/2006US7018696 Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
03/23/2006WO2006030814A1 Resistance variable element and nonvolatile memory
03/23/2006US20060062040 Optical memory medium and optical memory medium reproducing device
03/23/2006DE102005035152A1 MRAM und Verfahren zu dessen Herstellung MRAM and methods for its preparation
03/23/2006DE102004037151A1 Verfahren zur Bildung von Speicherschichten A method of forming storage layers
03/22/2006EP1449218A4 Molehole embedded 3-d crossbar architecture used in electrochemical molecular memory device
03/21/2006US7016234 Storage device
03/21/2006US7016222 Nonvolatile semiconductor memory device
03/21/2006US7015504 Sidewall formation for high density polymer memory element array
03/21/2006US7015500 Memory device utilizing carbon nanotubes
03/21/2006US7015336 Sub-nanoscale electronic devices and processes
03/21/2006US7015254 Apparatus generates colloidal silica; controlling particle size, uniformity, consistency, hydration and three-dimensional structure via computer
03/16/2006US20060056758 Photonic interconnections that include optical transmission paths for transmitting optical signals
03/16/2006US20060056221 Readout circuit, solid state image pickup device using the same circuit, and camera system using the same
03/16/2006US20060054982 Nanowire optoelectric switching device and method
03/16/2006US20060054936 Nanosensors
03/16/2006US20060054882 Switching element
03/16/2006DE102004041330B3 Speicherschaltung mit ein Widerstandsspeicherelement aufweisenden Speicherzellen Memory circuit having a resistive memory element having memory cells
03/15/2006EP1634296A2 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
03/15/2006EP1587636A4 Conductive-polymer electronic switch
03/15/2006CN1747058A Phase-change memory device with current control and its control method
03/14/2006US7013060 Optical cross-connect device
03/14/2006US7012306 Electrochemical device
03/09/2006WO2005124788A3 Nanoscale programmable structures and methods of forming and using same
03/09/2006US20060050342 Integrated reading and writing of a hologram with a rotated reference beam polarization
03/09/2006US20060049981 Method and apparatus for processing high time-bandwidth signals using a material with inhomogeneously broadened absorption spectrum
03/09/2006DE102004040753A1 Circuit arrangement for information storage in cells of the CBRAM-type, has write transistor and constant current source arranged in symmetrical current circuit
03/09/2006DE102004040751A1 Resistiv schaltende nicht-flüchtige Speicherzelle auf der Basis von Alkali-Ionendrift Resistive-switching non-volatile memory cell based on alkali metal ion drift
03/09/2006DE102004040750A1 Speicherzellenanordnung mit Speicherzellen vom CBRAM-Typ und Verfahren zum Programmieren von Speicherzellen vom CBRAM-Typ Memory cell array having memory cells of the CBRAM type and method for programming memory cells CBRAM type
03/08/2006EP1631965A2 Nanoelectromechanical memory cells and data storage devices
03/08/2006EP1631957A2 High areal density holographic data storage system
03/08/2006CN1745488A Chemical switching of nucleic acid circuit elements
03/08/2006CN1744299A Memory cell with an asymmetrical area
03/07/2006US7010644 Software refreshed memory device and method
03/07/2006US7009909 Line drivers that use minimal metal layers
03/07/2006US7009278 3d rram
03/07/2006US7009235 Conductive memory stack with non-uniform width
03/07/2006US7008604 Purifying a mixture of single-wall carbon nanotubes and amorphous carbon contaminate, by heating under oxidizing conditions to remove amorphous carbon and recovering at least 80 percent by weight single-wall carbon nanotubes
03/02/2006WO2006023338A1 Polymer memory with variable data retention time
03/02/2006WO2005104188A3 Polymer dielectrics for memory element array interconnect
03/02/2006US20060046445 Method of forming a conductive line for a semiconductor device using a carbon nanotube and semiconductor device manufactured using the method
03/02/2006US20060044862 Photon-based memory device
03/02/2006DE102004041191A1 Nonvolatile storage cell useful for phase change technology in semiconductor production includes a compound having a layer contacted via two electrodes which has electroactive layer
03/02/2006DE102004037150A1 Resistiv arbeitender Speicher für Low-Voltage-Anwendungen Resistive working memory for low-voltage applications
03/02/2006DE102004019860B4 Verfahren und Vorrichtung zur Programmierung von CBRAM-Speicherzellen Method and apparatus for programming the memory cells of the CBRAM
03/01/2006EP1630882A1 Nanometric structure and corresponding manufacturing method
03/01/2006EP1630881A1 Hosting structure of nanometric elements and corresponding manufacturing method
03/01/2006EP1630819A2 Three-dimensional memory array
03/01/2006EP1629535A1 Planar polymer memory device
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