Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
07/2014
07/01/2014US8767439 Resistance change nonvolatile memory device, semiconductor device, and method of operating resistance change nonvolatile memory device
07/01/2014US8767438 Memelectronic device
07/01/2014US8766344 Vertical mosfet transistor, in particular operating as a selector in nonvolatile memory devices
07/01/2014US8765022 Water dispersible polypyrroles made with polymeric acid colloids for electronics applications
06/2014
06/26/2014WO2014100749A2 A multi-level memory array having resistive elements for multi-bit data storage
06/26/2014WO2014100024A1 Resistive memory structure for single or multi-bit data storage
06/26/2014WO2014099011A1 Method and apparatus for reading variable resistance memory elements
06/26/2014US20140177369 Optical data store and method for storage of data in an optical data store
06/26/2014US20140177368 Nonvolatile memory apparatus
06/26/2014US20140177329 Bottom electrode geometry for phase change memory
06/26/2014US20140177322 Semiconductor memory apparatus, verify read method and system
06/26/2014US20140177321 Nonvolatile memory device and related operating method
06/26/2014US20140177320 Resistive memory device and write method thereof
06/26/2014US20140177319 Nonvolatile memory apparatus
06/26/2014US20140177318 Hybrid Memory
06/26/2014US20140177317 Non-volatile memory system with power reduction mechanism and method of operation thereof
06/26/2014US20140177316 Non-volatile memory system with reset verification mechanism and method of operation thereof
06/26/2014US20140177315 Multi-Level Memory Array Having Resistive Elements For Multi-Bit Data Storage
06/25/2014CN103890851A 调节相变存储器单元 Adjusting the phase change memory cells
06/25/2014CN103886899A 非易失性存储装置 Non-volatile memory device
06/25/2014CN103886898A 非易失性存储装置 Non-volatile memory device
06/25/2014CN103886897A 混合存储器 Hybrid Memory
06/24/2014US8760910 Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
06/19/2014US20140169089 Path isolation in a memory device
06/19/2014US20140169070 Heterojunction oxide non-volatile memory devices
06/19/2014US20140169069 Resistive Memory Device, System Including the Same and Method of Reading Data in the Same
06/19/2014US20140169068 Nonvolatile memory device having variable resistive elements and method of driving the same
06/19/2014US20140169067 Resistance memory device and memory apparatus and data processing system
06/19/2014US20140169066 Resistive memory sensing
06/19/2014US20140169065 High voltage generating circuit for resistive memory apparatus
06/19/2014US20140169064 Regulator, voltage generator and semiconductor memory device
06/19/2014US20140169062 Methods of Manufacturing Embedded Bipolar Switching Resistive Memory
06/19/2014US20140167816 Memory cell with volatile and non-volatile storage
06/18/2014CN103872244A Resistive memory device and fabrication method thereof
06/17/2014US8756464 Flash memory device and flash memory programming method equalizing wear-level
06/17/2014US8755215 Resistive memory device
06/17/2014US8755214 Determining cell-state in phase-change memory
06/17/2014US8755213 Decoding scheme for bipolar-based diode three-dimensional memory requiring bipolar programming
06/12/2014WO2014086990A1 Varistor
06/12/2014US20140160857 Non-Volatile Memory Device, Driving Method of Memory Controller Controlling the Non-Volatile Memory Device and Memory System Including the Memory Controller and the Non-Volatile Memory Device
06/12/2014US20140160839 Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same
06/12/2014US20140160838 Three-dimensional memory array and operation scheme
06/12/2014US20140160837 Resistive memory device and method of manufacturing the same
06/12/2014US20140160833 Semiconductor memory device
06/12/2014US20140160832 Semiconductor device
06/12/2014US20140160831 Nonvolatile Memory Devices Using Variable Resistive Elements and Related Driving Methods Thereof
06/12/2014US20140160830 Programmable Resistive Device and Memory Using Diode as Selector
06/11/2014EP2740122A1 Short circuit reduction in an electronic component comprising a stack of layers arranged on a flexible substrate
06/11/2014CN103858172A Select device for cross point memory structures
06/11/2014CN103855303A Method And Structure For Resistive Switching Random Access Memory With High Reliability And High Density
06/11/2014CN103855300A Phase change storage and forming method thereof
06/11/2014CN103855181A Resistive random access memory devices having variable resistance layers and methods of fabricating same
06/10/2014US8750066 Temperature compensation of conductive bridge memory arrays
06/10/2014US8750062 Memory element and method for determining the data state of a memory element
06/10/2014US8750021 Bipolar resistive-switching memory with a single diode per memory cell
06/05/2014WO2014084799A1 Ultrafast nonvolatile memory
06/05/2014WO2014083411A1 A system and a method for designing a hybrid memory cell with memristor and complementary metal-oxide semiconductor
06/05/2014US20140153326 Cell sensing circuit for phase change memory and methods thereof
06/05/2014US20140153318 Circuit and method for reading a resistive switching device in an array
06/05/2014US20140153317 Silicon-based nanoscale resistive device with adjustable resistance
06/05/2014US20140153316 Methods of Reading and Using Memory Cells
06/05/2014US20140153315 Semiconductor memory apparatus, refresh method and system
06/05/2014US20140153314 System and a method for designing a hybrid memory cellwith memristor and complementary metal-oxide semiconductor
06/05/2014US20140153310 Content addressable memory
06/04/2014EP2737628A2 Field programmable gate array utilizing two-terminal non-volatile memory
06/04/2014CN103840079A Phase change memory, bottom contact structure thereof, method for manufacturing phase change memory and method for manufacturing bottom contact structure of phase change memory
06/04/2014CN103840078A Method for manufacturing phase change memory
06/04/2014CN103839958A Memorizer device, integrated circuit and manufacturing method of memorizer device
06/04/2014CN101911205B Nonvolatile semiconductor memory device
06/03/2014US8745452 Resistive memory device and test systems and methods for testing the same
06/03/2014US8743632 Nonvolatile memory device, operating method thereof, and data storage device having the same
06/03/2014US8743600 Processors and systems using cell-refreshed phase-change memory
06/03/2014US8743599 Approach for phase change memory cells targeting different device specifications
05/2014
05/30/2014WO2014080616A1 Nonvolatile semiconductor storage device
05/30/2014WO2014079747A1 Rram implication logic gates
05/29/2014US20140149773 Latch circuit and data processing system
05/29/2014US20140146612 Three dimensional memory control circuitry
05/29/2014US20140146602 Divided-Down Read Voltage in Phase Change Memory Cells
05/29/2014US20140146601 Processors and systems with multiple reference columns in multibit phase-change memory
05/29/2014US20140146596 Phase change memory adaptive programming
05/29/2014US20140146595 Circuit for concurrent read operation and method therefor
05/29/2014US20140146594 Designing method of non-volatile memory device, manufacturing method of non-volatile memory device, and non-volatile memory device
05/29/2014US20140146592 Low voltage embedded memory having cationic-based conductive oxide element
05/28/2014EP2736044A1 Rram implication logic gates
05/28/2014EP2735027A1 Nonvolatile resistance change element
05/28/2014EP2734999A1 Circuit and method for reading a resistive switching device in an array
05/28/2014CN103828238A 使用双端非易失性存储器的现场可编程门阵列 Use of the two-terminal non-volatile memory field programmable gate array
05/28/2014CN103827972A 用于读取阵列中的电阻开关器件的电路和方法 Circuit and a method for reading the resistance of the switching device array for
05/28/2014CN103824938A 一种阻变存储器结构及其制备方法 A memory structure and preparation method resistive
05/28/2014CN103824591A 相变存储器系统 Phase change memory system
05/27/2014US8737121 Drift-insensitive or invariant material for phase change memory
05/27/2014US8737116 Semiconductor device and its manufacturing method
05/27/2014US8737115 Method of forming process for variable resistive element and non-volatile semiconductor memory device
05/27/2014CA2643280C Method of reducing electro-static discharge (esd) from conductors on insulators
05/22/2014WO2014076509A2 A storage cell of non-volatile memory
05/22/2014US20140140128 Processors and Systems with Divided-Down Phase Change Memory Read Voltages
05/22/2014US20140140125 Semiconductor device and control method for semiconductor device
05/22/2014US20140140124 Resistive memory device having selective sensing operation and access control method thereof
05/22/2014US20140140122 Array voltage regulating technique to enable data operations on large cross-point memory arrays with resistive memory elements
05/21/2014CN103811656A 可变电阻存储结构及其形成方法 Variable resistive memory structure and method of forming
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