| Patents for C09K 13 - Etching, surface-brightening or pickling compositions (3,392) |
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| 08/07/2008 | US20080188079 Metal-polishing composition and chemical mechanical polishing method by using the same |
| 08/06/2008 | EP1824945A4 Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
| 08/06/2008 | CN101235290A Acidic etching liquid |
| 08/06/2008 | CN101234386A Method for selectively recovering TFT-LCD glass substrate by using deep pool chemical reaction |
| 07/31/2008 | WO2007095101A3 Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
| 07/31/2008 | US20080182422 Generating a plasma from the process gas of carbon tetrachloride, oxygen and methane;selectively plasma etching the carbon-rich layer relative to the inorganic layer, wherein an etch |
| 07/31/2008 | US20080182413 Selective chemistry for fixed abrasive cmp |
| 07/31/2008 | US20080179280 Method for forming an indium cap layer |
| 07/31/2008 | US20080178394 Composition and method for burn out and dye transfer |
| 07/30/2008 | EP1950019A1 Solution for separation of interlayer film and interlayer film separation method |
| 07/30/2008 | CN101230272A Etching solution for etching BST film and preparation method thereof |
| 07/30/2008 | CN100406535C Azeotrope-like composition of 1,2,2-trichloro-1,3,3,3-tetrafluoropropane and hydrogen fluoride |
| 07/29/2008 | US7404910 Etching solution, etched article and method for etched article |
| 07/24/2008 | DE102007004060A1 Ätzlösung und Ätzverfahren Etching and etching |
| 07/22/2008 | US7402552 Non-corrosive cleaning composition for removing plasma etching residues |
| 07/22/2008 | US7402261 Acidic aqueous solution, amphoteric surfactant/corrosion inhibitor of lysine, proline or arginine; glycol selected from diethylene glycol, ethylene glycol, and polyoxyethylene glycol; hydrogen peroxide, benzoyl peroxide, barium peroxide, calcium peroxide or sodium peroxide; applied to tungsten layer |
| 07/22/2008 | US7402094 Fixed-abrasive chemical-mechanical planarization of titanium nitride |
| 07/17/2008 | US20080171441 Polishing compound and method for producing semiconductor integrated circuit device |
| 07/16/2008 | CN100402624C Slurry for chemical-mechanical polishing and forming method, semiconductor device making method |
| 07/15/2008 | US7399424 Compositions for dissolution of low-k dielectric films, and methods of use |
| 07/10/2008 | US20080167209 Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing a fluo-ride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; and a hydroxycarboxylic acid and/or salt thereof |
| 07/10/2008 | US20080166842 For preventing from leaning a capacitor contains hydrofluoric acid (HF), ammonium fluoride (NH4F), an alkyl ammonium fluoride, a surfactant, an alcohol compound, and water; capacitors with improved capacitance; wet etching composition |
| 07/03/2008 | US20080160880 Chemical mechanical polishing slurry and chemical mechanical polishing apparatus and method |
| 06/26/2008 | US20080153392 Chemical Mechanical Planarization Composition, System, and Method of Use |
| 06/26/2008 | US20080149886 hydrochloric acid and a source of ferric ions; ferric chloride, ferric bromide, ferric iodide; formation of a layer of iron powder is avoided, thus etching quality is consistent; optional surfactant: polyoxyethylene ether, polyvinyl ether, sodium benzenesulfonate and fatty alcohol sulfates |
| 06/26/2008 | US20080149884 Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing |
| 06/26/2008 | US20080149591 Method and slurry for reducing corrosion on tungsten during chemical mechanical polishing |
| 06/25/2008 | EP1935520A1 Aqueous solution and method for separation of conductive sintered ceramic material |
| 06/25/2008 | EP1935519A1 Aqueous solution and method for separation of dark sintered ceramic material |
| 06/24/2008 | US7390744 Method and composition for polishing a substrate |
| 06/24/2008 | US7390429 Polycarboxylate and polyamino chelating agents, benzotriazole and benzoylimidazole corrosion inhibitors, a suppresor, a solvent, and inorganic acid based electrolyte; minimal damage to the substrate during planarization |
| 06/19/2008 | WO2008071237A1 Power transmission cable |
| 06/19/2008 | WO2008051947A3 Highly filled polymer materials |
| 06/19/2008 | US20080142756 Etchant and method for fabricating a thin film transistor substrate including conductive wires using the etchant and the resulting structure |
| 06/19/2008 | CA2673032A1 Power transmission cable |
| 06/12/2008 | US20080138990 Polishing Composition and Polishing Method |
| 06/12/2008 | US20080135520 Chemical composition for chemical mechanical planarization |
| 06/10/2008 | US7384534 Amines, amides, carboxylate, dicarboxylate or tri-carboxylate groups containing chelating agents, a substituted or unsubstituted benzotriazole or a polymeric corrosion resistance agent, sodium hydroxide or ammonium hydroxide as pH adjuster, a solvent |
| 06/05/2008 | US20080128763 Transistor, method of manufacturing same, etchant for use during manufacture of same, and system containing same |
| 06/04/2008 | CN100392035C 抛光组合物 The polishing composition |
| 05/29/2008 | US20080121840 mixing oxidizers, oxidized-metal etchants, protective film-forming agents and diluents, used for polishing semiconductors |
| 05/29/2008 | US20080121839 Slurry Composition for Chemical Mechanical Polishing and Precursor Composition Thereof |
| 05/29/2008 | US20080121838 Optical brightener additive to cements and primers |
| 05/29/2008 | US20080121622 Ammonium bifluoride, acetic acid, hydrochloric acid, and solvent (dimethylformamide); high density plasma silicon oxide layer and borophosphosilicate glass layer; etch resistance; electrical resistance |
| 05/29/2008 | US20080121621 Printable Medium for the Etching of Silicon Dioxide and Silicon Nitride Layers |
| 05/28/2008 | EP1086191B1 Methods and apparatus for cleaning semiconductor substrates after polishing of copper film |
| 05/28/2008 | CN101186827A Chromeless etching solution, method for disclosing defect and technology for processing underlay |
| 05/28/2008 | CN101186826A Regeneration process of alkaline permanganate etching solution and unit therefor |
| 05/22/2008 | US20080119056 Solution for wet etching copper film included within a ball limiting metallurgy of a semiconductor device, comprising ammonium persulfate etching agent, potassium sulfate passivation agent for protecting lead tin solder material, and pH modifier for controlling etch rate of copper |
| 05/22/2008 | US20080116170 Selective metal wet etch composition and process |
| 05/15/2008 | WO2008058240A2 Metal-rich siliceous compositions and methods of producing same |
| 05/15/2008 | US20080111102 Chemical Mechanical Polishing Slurry |
| 05/15/2008 | US20080111101 Compositions and methods for CMP of low-k-dielectric materials |
| 05/15/2008 | US20080110748 Selective High Dielectric Constant Material Etchant |
| 05/14/2008 | EP1920026A1 Improved microetching solution |
| 05/08/2008 | WO2008052637A1 Printable medium for etching of oxidic, transparent and conducting layers |
| 05/08/2008 | WO2008052636A1 Etching paste containing particles for silicon surfaces and layers |
| 05/08/2008 | WO2008033886A3 Method and system for dry etching a hafnium containing material |
| 05/08/2008 | US20080108497 Metal-rich siliceous compositions and methods of producing same |
| 05/08/2008 | US20080105652 CMP of copper/ruthenium/tantalum substrates |
| 05/08/2008 | US20080105651 Polishing Slurry for Cmp |
| 05/08/2008 | DE102006051952A1 Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten Particle-containing etching pastes for silicon surfaces and layers |
| 05/08/2008 | DE102006051735A1 Druckfähiges Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten Printable medium for etching oxidic, transparent, conductive layers |
| 05/07/2008 | EP1918985A1 Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition |
| 05/06/2008 | US7368387 Polishing composition and polishing method |
| 05/06/2008 | US7368064 Hydrofluoric acid, ammonium fluoride, or amine fluoride; chelating agent (ammonium malonate, glycolate, tartrate or citrate); carboxylic ammonium salt having acid dissociation constant pKan of 2.5 or greater at 25 degrees C.; water; for cleaning a substrate on which a nickel silicide layer is formed |
| 05/06/2008 | US7367870 Polishing fluid and polishing method |
| 05/01/2008 | US20080099718 Methods for characterizing defects on silicon surfaces and etchng composition and treatment process therefor |
| 05/01/2008 | US20080099717 Silicon wafer etching process and composition |
| 04/29/2008 | US7364667 Slurry for CMP and CMP method |
| 04/24/2008 | US20080096385 Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same |
| 04/23/2008 | CN100383930C Chemistry for etching quaternary interface layers on InGaAsP mostly formed between GaAs and InxGa(1-x)P layers |
| 04/16/2008 | EP1911501A2 A regeneration method of etching solution, an etching method and an etching system |
| 04/16/2008 | EP1551936A4 Composition and process for wet stripping removal of sacrificial anti-reflective material |
| 04/16/2008 | CN101163776A Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
| 04/15/2008 | US7358195 Method for fabricating liquid crystal display device |
| 04/15/2008 | US7357879 Cupric chloride solution and triazole compound; capable of forming an etching-inhibiting coating; nonuniform irregularities formed on the side wall of the circuit pattern by the etching improves the adhesion between the circuit pattern and an insulating resin layer covering the circuit pattern |
| 04/10/2008 | DE19928570B4 Verfahren zur Herstellung von Halbleitervorrichtungen A process for the manufacture of semiconductor devices |
| 04/09/2008 | CN100379837C Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal |
| 04/08/2008 | US7354530 Chemical mechanical polishing systems and methods for their use |
| 04/03/2008 | US20080079006 Signal line for a display device, etchant, thin film transistor panel, and method for manufacturing the same |
| 04/03/2008 | US20080078747 Fluorinated sulfonamide surfactants for aqueous cleaning solutions |
| 04/01/2008 | US7351354 comprising orthoperiodic acid, hydrofluoric acid and water; for removing tungsten and forming a film on semiconductor substrate; free of sulfuric acid; demetallization |
| 04/01/2008 | US7351353 Method for roughening copper surfaces for bonding to substrates |
| 03/27/2008 | US20080073614 Metal removing solution and metal removing method using the same |
| 03/20/2008 | US20080067149 Mixture of urea and alkanediphosphonic acid(s) optionally substituted with one or more hydroxyl or amino groups or salt; stabilization of an acidic, metal- and peroxide-containing solution |
| 03/13/2008 | WO2008028932A1 Additive for chromic acid applications |
| 03/13/2008 | US20080064223 Etching liquid, etching method, and method of manufacturing electronic component |
| 03/13/2008 | US20080064222 Alkaline etching solution for semiconductor wafers and alkaline etching method |
| 03/13/2008 | US20080060278 Chemical-mechanical polishing composition comprising colloidal silica, at least one onium compound selected from a phosphonium salt, a sulfonium salt, and a combination thereof, an aqueous carrier therefor; the composition having a pH of 5 or less |
| 03/13/2008 | CA2662238A1 A novel additive for chromium electrolytes |
| 03/12/2008 | CN100374527C Metal CMP slurry compositions that favor mechanical removal of metal oxides with reduced susceptibility to micro-scratching |
| 03/06/2008 | US20080057716 Metal-polishing composition and chemical-mechanical polishing method |
| 03/05/2008 | CN101134930A Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| 02/28/2008 | US20080048279 Process for Producing Semiconductor Substrate, Semiconductor Substrate for Solar Application and Etching Solution |
| 02/21/2008 | WO2008022259A1 Solution for forming polishing slurry, polishing slurry and related methods |
| 02/21/2008 | US20080045035 Etching solution for etching metal layer, etching method using the etching solution, and method of fabricating semiconductor product using the etching solution |
| 02/21/2008 | US20080045020 Slurry Composition For a Chemical Mechanical Polishing Process, Method of Polishing an Object Layer and Method of Manufacturing a Semiconductor Memory Device Using the Slurry Composition |
| 02/21/2008 | US20080042100 Slurry composition |
| 02/21/2008 | US20080042099 Solution for forming polishing slurry, polishing slurry and related methods |