| Patents for C09K 13 - Etching, surface-brightening or pickling compositions (3,392) |
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| 09/07/2005 | CN1665755A Compositions for removing etching residue and use thereof |
| 09/07/2005 | CN1218222C Compsns. for cleaning organic and plasma etched residues for semiconductor devices |
| 09/07/2005 | CN1218015C Liquid crystal polymers for flexible circuits |
| 09/06/2005 | US6939805 Method of etching a layer in a trench and method of fabricating a trench capacitor |
| 08/31/2005 | CN1216953C Polishing composition for metal CMP and method of polishing susbstroote |
| 08/31/2005 | CN1216800C Method for producing carbonyl fluoride |
| 08/24/2005 | EP1566421A2 CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate. |
| 08/18/2005 | US20050181620 Fluorinated surfactants for aqueous acid etch solutions |
| 08/17/2005 | CN1654713A Corrosion-inhibiting cleaning compositions for metal layers and patterns on semiconductor substrates |
| 08/11/2005 | US20050176604 Corrosion-inhibiting cleaning compositions for metal layers and patterns on semiconductor substrates |
| 08/10/2005 | CN1651608A Etching solution composition for metal films |
| 08/04/2005 | US20050169096 PAA- based etchant, methods of using same, and resultant structures |
| 08/04/2005 | US20050167634 comprising a solution of hydrofluoric acid and hydrogen peroxide, used to remove residues |
| 08/03/2005 | EP1559762A2 Chemical mechanical polishing slurry useful for copper substrates |
| 08/03/2005 | EP1558698A1 Fluorinated surfactants for aqueous acid etch solutions |
| 08/03/2005 | EP1558697A1 Fluorinated surfactants for buffered acid etch solutions |
| 08/03/2005 | CN1649084A Process for producing a movable structure and etchant for silicon oxide film |
| 08/02/2005 | US6923919 Preethching liquid crystalline polymer; depositing metal |
| 07/27/2005 | CN1644545A Etching agent of motor-driven vehicle glass and applying method thereof |
| 07/21/2005 | US20050156140 Tungsten metal removing solution and method for removing tungsten metal by use thereof |
| 07/20/2005 | CN1640974A 抛光组合物和抛光方法 Polishing composition and polishing method |
| 07/14/2005 | US20050153556 Methods for polishing copper features of semiconductor devices structures |
| 07/13/2005 | EP1551936A1 Composition and process for wet stripping removal of sacrificial anti-reflective material |
| 07/13/2005 | CN1640215A Liquid crystal polymers for flexible circuits |
| 07/05/2005 | US6914039 Etching liquid composition |
| 06/30/2005 | US20050139803 polishes comprising alumina, colloidal silica, anoxidizing agents, water succinic acid and citric or malic acid, used for polishing magnetic disc heads |
| 06/29/2005 | EP1547968A2 Process for producing a movable structure and etchant for silicon oxide film |
| 06/29/2005 | CN1632925A Wafer bonding surface processing agent and wafer bonding method |
| 06/23/2005 | US20050136807 Polishing composition for magnetic disk |
| 06/23/2005 | US20050136672 Etching solution composition for metal films |
| 06/23/2005 | US20050133758 Method for fabricating liquid crystal display device |
| 06/23/2005 | US20050132660 Polishing composition |
| 06/23/2005 | DE102004050358A1 Etching composition hydrogen fluoride useful for selectively etching oxide layer and for manufacturing semiconductor device comprises ammonium fluoride, non-ionic polymer surfactant and water |
| 06/22/2005 | EP1544901A1 Polishing compound composition, method for producing same and polishing method |
| 06/21/2005 | US6908569 Ruthenium silicide wet etch |
| 06/16/2005 | CA2589168A1 Removal of mems sacrificial layers using supercritical fluid/chemical formulations |
| 06/15/2005 | CN1626699A Removing liquid for tungsten metal and method for removing tungsten metal using such liquid |
| 06/09/2005 | WO2005053004A1 Selective removal chemistries for sacrificial layers methods of production and uses thereof |
| 06/09/2005 | US20050124517 Aqueous solution containing fluorine compound, amine and chelate compound |
| 06/08/2005 | EP1538664A1 Etchant and etching method |
| 06/08/2005 | CN1625590A An etchant for a wiring, a method for manufacturing the wiring using the etchant, a thin film transistor array panel including the wiring, and a method for manufacturing the same |
| 06/02/2005 | WO2005050673A1 Functional paste |
| 06/02/2005 | US20050118820 CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate |
| 06/01/2005 | EP1535318A1 Etching pastes for silicon surfaces and layers |
| 06/01/2005 | EP1534643A1 Compositions for removing etching residue and use thereof |
| 06/01/2005 | CN1623223A Chemistry for etching quaternary interface layers on InGaAsP mostly formed between GaAs and InxGa(1-x)P layers |
| 05/31/2005 | US6899596 Chemical mechanical polishing of dual orientation polycrystalline materials |
| 05/26/2005 | WO2005047422A1 Selective etch and cleaning chemistries, methods of production and uses thereof |
| 05/26/2005 | US20050109980 Polishing composition for CMP having abrasive particles |
| 05/25/2005 | EP1532225A1 Etching pastes for titanium oxide surfaces |
| 05/25/2005 | EP1303575B1 Liquid crystal polymers for flexible circuits |
| 05/25/2005 | CN1203742C Etching liquid, and method for mfg .flexible distributing board |
| 05/24/2005 | US6896826 Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| 05/10/2005 | US6890859 Methods of forming semiconductor structures having reduced defects, and articles and devices formed thereby |
| 05/10/2005 | US6890452 Etching of silicon oxide-containing substrates; sulfonate containing surfactant |
| 05/04/2005 | CN1612305A Unsaturated oxygenated fluorocarbons for selective anisotropic etch applications |
| 05/03/2005 | US6887796 Method of wet etching a silicon and nitrogen containing material |
| 05/03/2005 | US6887137 Chemical mechanical polishing slurry and chemical mechanical polishing method using the same |
| 04/21/2005 | US20050081883 Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device |
| 04/19/2005 | US6881129 Fixed-abrasive chemical-mechanical planarization of titanium nitride |
| 04/14/2005 | US20050079649 Etchant composition for sem image enhancement of p-n junction contrast |
| 04/13/2005 | CN1605943A Hydrazine free etching liquid |
| 04/13/2005 | CN1196759C Process for preparation of metal oxide slurry adaptable to chemical-mechanical polishing of semiconductor |
| 03/31/2005 | US20050070110 Etching solution, etching method and method for manufacturing semiconductor device |
| 03/30/2005 | CN1194921C Method for production of mat glass by horizontally placing process |
| 03/29/2005 | US6873452 Compositions and processes for format flexible, roll-to-roll manufacturing of electrophoretic displays |
| 03/24/2005 | US20050061768 Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum and methods of forming trench isolation within a semiconductor substrate |
| 03/23/2005 | EP1516356A2 Acid etching mixture having reduced water content |
| 03/23/2005 | CN1599038A Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas |
| 03/23/2005 | CN1598062A Particle-free polishing fluid for nickel-based coating planarization |
| 03/15/2005 | US6866793 High selectivity and high planarity dielectric polishing |
| 03/09/2005 | CN1592548A Method for mfg. printed circuitboard |
| 03/03/2005 | WO2005019499A1 Liquid for removing degenerated metal layer and method for removing degenerated metal layer |
| 03/03/2005 | US20050045852 Particle-free polishing fluid for nickel-based coating planarization |
| 03/01/2005 | US6861010 Copper-based metal polishing composition, method for manufacturing a semiconductor device, polishing composition, aluminum-based metal polishing composition, and tungsten-based metal polishing composition |
| 02/24/2005 | WO2005017230A1 Etching solution for titanium-containing layer and method for etching titanium-containing layer |
| 02/22/2005 | US6858540 Selective removal of tantalum-containing barrier layer during metal CMP |
| 02/16/2005 | CN1580173A Polishing composition for magnetic disk |
| 02/10/2005 | US20050032463 Polishing composition for magnetic disk |
| 02/09/2005 | CN1576346A Polishing composition |
| 02/09/2005 | CN1576345A Aqueous dispersion for chemical/mechanical polishing |
| 02/09/2005 | CN1576339A 抛光组合物 The polishing composition |
| 02/02/2005 | EP1501916A1 Non-corrosive cleaning compositions for removing etch residues |
| 02/02/2005 | CN1575328A Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| 02/01/2005 | US6849200 Composition and process for wet stripping removal of sacrificial anti-reflective material |
| 01/20/2005 | US20050014383 Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas |
| 01/20/2005 | US20050011863 Method for inspecting a titanium-based component |
| 01/20/2005 | US20050011859 Removing dielectric materials from layered substrates |
| 01/19/2005 | EP1498941A2 Unsaturated oxygenated fluorocarbons for selective anisotropic etch applications |
| 01/19/2005 | EP1498940A2 Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas |
| 01/19/2005 | EP1498731A2 Method for inspecting a titanium-base component |
| 01/18/2005 | CA2307154C Polishing slurry |
| 01/12/2005 | CN1184361C Process for metallizing a plastic surface |
| 01/06/2005 | US20050003746 Polishing composition |
| 01/06/2005 | US20050003674 Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| 01/06/2005 | US20050001199 Mixture containing ceria particles with bromoalcohol, polypotassium or ammonium acrylate, ammonium citrate or ammonium dodecylbenzenesulfonic acid; storage stability; neutral pH |
| 01/05/2005 | EP1493789A1 Aqueous dispersion for chemical/mechanical polishing |
| 01/04/2005 | US6838013 Transparent electrodes formed on a substrate by forming a bottom high index layer, a metallic conductive layer, and a top high index layer with a conductivity of at least about 400 Omega /square; and chemically etching the bottom layer |
| 12/30/2004 | US20040266210 Etchant for etching nitride and method for removing a nitride layer using the same |
| 12/30/2004 | US20040262569 Etchant for etching double-layered copper structure and method of forming array substrate having double-layered copper structures |