Patents for C09K 13 - Etching, surface-brightening or pickling compositions (3,392)
08/2010
08/12/2010US20100203729 Composition for chemical mechanical polishing
08/12/2010US20100200802 Oxidation-stabilized cmp compositions and methods
08/11/2010CN101331595B Microetching composition and method of using the same
08/05/2010WO2010086745A1 Method of etching lanthanum-containing oxide layers
08/05/2010US20100197201 Polishing liquid for metal and method of polishing
08/05/2010US20100193728 Chemical Mechanical Polishing Composition
08/05/2010US20100193470 Polishing composition for nickel-phosphorous memory disks
08/04/2010CN101796160A Copper CMP composition containing ionic polyelectrolyte and method
08/04/2010CN101792667A Low tension ITO etchant
08/04/2010CN101235290B Acidic etching liquid
07/2010
07/29/2010WO2010084213A1 Means, process and device for superficial treatment of surfaces of parts of gold or alloys thereof
07/29/2010US20100190339 Compositions and methods for chemical-mechanical polishing of phase change materials
07/29/2010US20100187470 Fine cerium oxide powder and preparing method the same and cmp slurry comprising the same
07/27/2010CA2690697A1 Selective etching and formation of xenon difluoride
07/22/2010US20100184292 Systems, methods and slurries for chemical-mechanical rough polishing of gaas wafers
07/22/2010US20100184291 Aqueous slurry composition for chemical mechanical polishing and chemical mechanical polishing method
07/22/2010US20100181525 Compositions comprising silane modified metal oxides
07/21/2010EP2207756A1 Etching compositions, methods and printing components
07/21/2010EP1124912B1 A chemical mechanical polishing slurry system having an activator solution
07/15/2010US20100178768 Controlling passivating film properties using colloidal particles, polyelectrolytes, and ionic additives for copper chemical mechanical planarization
07/15/2010US20100178767 Chemical-mechanical polishing composition comprising metal-organic framework materials
07/15/2010US20100178765 Metal Polishing Slurry and Method of Polishing a Film to be Polished
07/15/2010US20100176336 Systems, methods and solutions for chemical polishing of GaAs wafers
07/15/2010US20100176335 CMP Slurry Composition for Copper Damascene Process
07/15/2010US20100176082 Compositions and methods for the selective removal of silicon nitride
07/14/2010CN101778923A Microetching composition and method of using the same
07/13/2010US7754098 Chemical-mechanical polishing composition and method for using the same
07/08/2010US20100171069 Dispersion comprising cerium oxide, silicon dioxide and amino acid
07/07/2010CN101768445A Environment-friendly sull etching paste
07/01/2010US20100167547 Polishing liquid
07/01/2010US20100167546 Method and Composition for Chemical Mechanical Planarization of A Metal or A Metal Alloy
07/01/2010US20100167545 Method and Composition for Chemical Mechanical Planarization of A Metal
07/01/2010US20100164106 CMP Slurry Composition for Barrier Polishing for Manufacturing Copper Interconnects, Polishing Method Using the Composition, and Semiconductor Device Manufactured by the Method
07/01/2010US20100163788 Liquid cleaner for the removal of post-etch residues
07/01/2010US20100163787 Polishing composition
07/01/2010US20100163786 Polishing composition for semiconductor wafer
07/01/2010US20100163785 Dispersion comprising cerium oxide, silicon dioxide and amino acid
07/01/2010US20100163784 Polishing Composition for Planarizing Metal Layer
06/2010
06/30/2010CN101760201A Single-liquid type acid etching liquid
06/30/2010CN101760200A Alkaline etching solution
06/30/2010CN101760199A Two-liquid acid etching liquid oxidant
06/29/2010US7744769 etching gas COMPRISING HYPOFLUORITE WHICH DISSOCIATES MORE EASILY THAN, FOR EXAMPLE, EACH OF CF4, C2F6, C4F8, AND NF3
06/29/2010US7743615 Buffered heat transfer fluid for secondary refrigeration systems comprising a formate salt
06/24/2010US20100159807 Polymeric barrier removal polishing slurry
06/24/2010US20100159698 Combination, Method, and Composition for Chemical Mechanical Planarization of A Tungsten-Containing Substrate
06/24/2010US20100159624 Etchant for etching double-layered copper structure and method of forming array substrate having double-layered copper structures
06/24/2010US20100155655 Polishing composition
06/24/2010US20100155654 Polishing Composition
06/17/2010US20100152077 Process for Solvent Shifting a Nanoparticle Dispersion
06/17/2010US20100151684 Slurry composition for primary chemical mechanical polishing and chemical mechanical polishing method
06/17/2010US20100148113 Method for preparing cerium carbonate powder
06/17/2010US20100147803 Process for removing metallic material from casted substates, and related compositions
06/15/2010US7736530 CMP slurry and method for polishing semiconductor wafer using the same
06/09/2010EP2194570A1 Materials for polishing liquid for metal, polishing liquid for metal, mehtod for preparation thereof and polishing method using the same
06/08/2010US7731864 slurry comprising precipitated silica abrasive having diameter of 100 nm, a chelating buffer system comprising citric acid and oxalic acid to provide a pH of the slurry in an approximate range of 1.5 to 4.0, and a reactive silanol agent comprising tetraethylorthosilicate to act as an interference agent
06/03/2010US20100133466 Cerium carbonate powder, method for preparing the same, cerium oxide powder made therefrom, method for preparing the same, and CMP slurry comprising the same
06/02/2010EP2190947A1 Copper cmp composition containing ionic polyelectrolyte and method
06/02/2010CN101720352A New antioxidants for post-cmp cleaning formulations
06/02/2010CN101717645A Etching plaster for metal and metal oxide transparent conducting layer and etching process
06/01/2010US7727415 comprising at least one of hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride; makes fine treatment on multilayer film, including tungsten film and a silicon oxide film, possible by controlling the etching rate
05/2010
05/27/2010US20100130013 Slurry composition for gst phase change memory materials polishing
05/27/2010US20100129750 Dispersible nanoparticles
05/27/2010US20100127203 Inorganic foams
05/27/2010US20100126961 Polysilicon Planarization Solution for Planarizing Low Temperature Poly-Silicon Thin Film Panels
05/27/2010US20100126762 Method for manufacturing a printed circuit board and a printed circuit board obtained by the manufacturing method
05/20/2010WO2010056051A2 Etching solution for a transparent conductive film
05/18/2010US7718084 via phosphoric acid containing solutions; improved geometry of integrated circuits
05/14/2010WO2010052545A1 Additive for alkaline etching solutions, in particular for texture etching solutions, and process for producing it
05/13/2010US20100120250 Metal polishing slurry and polishing method
05/13/2010US20100120248 Etching solution and etching method
05/13/2010US20100120209 Etchant composition, and method of fabricating metal pattern and thin film transistor array panel using the same
05/13/2010US20100117024 Lapping composition and method using same
05/13/2010US20100116784 Mesa etch method and composition for epitaxial lift off
05/13/2010US20100116781 Etchant and array substrate having copper lines etched by the etchant
05/12/2010EP2183335A1 Microetching composition and method of using the same
05/12/2010CN1670114B Grinding abrasive grains, abrasive, abrasive solution, abrasive solution preparation method, grinding method, and semiconductor device fabrication method
05/12/2010CN101705096A Etching solution for use in wet etching of bismuth-based thin films
05/12/2010CN101704959A Method for recovering waste plastic and etching waste liquid
05/11/2010CA2407530C Etching pastes for inorganic surfaces
05/06/2010US20100112821 Etching solution
05/06/2010US20100112728 Methods for stripping material for wafer reclamation
05/06/2010US20100111831 Compositions and methods for surface abrasion with frozen particles
05/05/2010CN101701156A Method for restraining adhesion and removing the surface pollutant during chip scribing and the composition adopted by the method
05/04/2010US7709277 PAA-based etchant, methods of using same, and resultant structures
05/04/2010US7708904 lapping fluid contains very small amount of water, a Lewis acid and a Lewis base ; heat transfer; resist to corrosion and oxidation, prevent electrostatic build-up; use for cleaning the surface of the tooled articles
04/2010
04/29/2010US20100102268 Dispersion comprising cerium oxide and colloidal silicon dioxide
04/22/2010US20100099260 Aqueous dispersion for chemical mechanical polishng and chemical mechanical polishing method for semiconductor device
04/22/2010US20100099259 Polishing composition and method for manufacturing semiconductor integrated circuit device
04/22/2010US20100096584 Polishing Composition and Polishing Method Using the Same
04/22/2010US20100096360 Compositions and methods for barrier layer polishing
04/21/2010EP1354018B1 Azeotrope-like composition of 1,2,2-trichloro-1,3,3,3-tetrafluoropropane and hydrogen fluoride
04/20/2010US7700534 Process for removing contaminant from a surface and composition useful therefor description
04/15/2010US20100092366 Water-based polishing slurry for polishing silicon carbide single crystal substrate, and polishing method for the same
04/15/2010US20100090159 Semiconductor polishing composition
04/15/2010US20100090158 Alkaline aqueous solution composition for treating a substrate
04/15/2010US20100090157 Adhesive composition for hard tissue
04/15/2010US20100089872 Etching liquid for conductive polymer, and method for patterning conductive polymer
04/08/2010US20100087065 Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
04/06/2010US7691287 Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
04/01/2010WO2008144501A8 New antioxidants for post-cmp cleaning formulations
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