Patents for C09K 13 - Etching, surface-brightening or pickling compositions (3,392)
09/2007
09/11/2007US7267784 Safe for nickel phosphide, glass and/or ceramic materials; polishing efficiency, uniformity, removal rate; minimizing defects; includes purified sodium containing clays
09/11/2007US7267604 Grinding abrasive grains, abrasive, abrasive solution, abrasive solution preparation method, grinding method, and semiconductor device fabrication method
09/06/2007US20070207617 Polishing agent
09/05/2007EP1829834A1 Chemical process for obtaining anti-reflective glass, comprising immersion in an acid solution, for simultaneous and continuous production
09/05/2007EP1828070A2 Selective high dielectric constant material etchant
09/05/2007CN100336182C Etching liquid reproducing method, etching method and system
08/2007
08/30/2007US20070200089 Polishing liquid for metals
08/29/2007EP1824945A1 Selective removal chemistries for semiconductor applications, methods of production and uses thereof
08/28/2007US7261928 Package coating, processes of making, and packaging systems
08/28/2007US7261835 Acid blend for removing etch residue
08/23/2007WO2007095101A2 Selective removal chemistries for semiconductor applications, methods of production and uses thereof
08/22/2007CN1333444C Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
08/15/2007CN1332068C Wet chemical processing method and device of silicon
08/14/2007US7255810 Polymer with a degree of branching of at least 50% and a polishing pad and/or an abrasive, for use in chemical-mechanical polishing
08/14/2007US7255809 Hard magentic disks; abrasion using diamond particles in aqueous solution
08/09/2007US20070184661 Multi-component barrier polishing solution
08/09/2007US20070184658 Etching Liquid for Controlling Silicon Wafer Surface Shape
08/09/2007US20070181852 Passivative chemical mechanical polishing composition for copper film planarization
08/09/2007US20070181851 Polishing composition and polishing method
08/09/2007US20070181850 Polishing liquid for barrier layer
08/09/2007US20070181535 Chemical mechanical polishing of a bimetallic substrate with a mixture of an abrasive and two polishing rate modifiers: 9,10-anthraquinone-1,8-, 1.5- or 2,6-disulfonic acid having a standard reduction potential less than 0.34 and a second agent having a standard reduction potential greater than 0.34 V
08/09/2007US20070181534 Barrier polishing liquid and chemical mechanical polishing method
08/08/2007EP1558698B1 Fluorinated surfactants for aqueous acid etch solutions
08/08/2007CN101015043A Method for selective etching
08/07/2007US7252782 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
08/02/2007US20070178700 Compositions and methods for CMP of phase change alloys
08/02/2007US20070176142 Metal- polishing liquid and chemical-mechanical polishing method using the same
08/02/2007US20070176141 Compositions and methods for chemical mechanical polishing interlevel dielectric layers
08/02/2007US20070176140 Polishing composition and polishing method
08/02/2007US20070175862 Anisotropic etching agent composition used for manufacturing of micro-structures of silicon and etching method
08/01/2007CN101007948A Preparation method of broad dielectric constant polytetrafluoroethylene mixed impregnant liquor for print circuit board
07/2007
07/31/2007US7250369 Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
07/25/2007CN101003736A Etching liquid for preparing IT0 transparent electrodes in flat panel display
07/24/2007US7247256 Treating an aluminum film with a slurry of a polishing agent, an oxidant, a pH control additive, and an oxide film removal retarder; a first CMP which removes a part of the aluminum film; stopping the first CMP when a predetermined thickness of the aluminum, a second CMP with a defect prevention agent
07/24/2007US7247082 Polishing composition
07/19/2007US20070167017 a mixture of oxidizers, oxidized-metal etchants, protective film-forming agents and diluents, used for polishing semiconductors
07/18/2007EP1349969B1 Semiconductor stripping composition containing 1,3-dicarbonyl compounds
07/18/2007CN1326971C Cement dipping liquid in use for anchor pole made from glass fiber reinforced plastic
07/18/2007CN100999105A Manufacturing technology of mirror surface maintenance-free artificial stone board
07/12/2007WO2007078355A2 Microetching composition and method of using the same
07/12/2007WO2007038321A3 Ultrapure colloidal silica for use in chemical mechanical polishing applications
07/12/2007WO2006081149A3 Novel polishing slurries and abrasive-free solutions having a multifunctional activator
07/12/2007US20070161243 Aqueous solution for removing post-etch residue
07/12/2007US20070158309 Slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect and method for planarizing surface of semiconductor device using the same
07/11/2007CN1326199C Polishing composition including inhibitor of tungsten etching
07/10/2007US7241920 blend of a linear perfluorocarboxylic acid, a cyclic amine and an aliphatic alcohol; semiconductor cleaning with an acid etchant: ammonium fluoride and hydrofluoric acid or phosphoric acid mixtures with sulfuric acid, acetic acid, nitric acid, or fluoboric acid; lower surface tension; superior wetting
07/05/2007WO2007075272A1 Coatable composition
07/05/2007WO2007075271A1 Fluorinated surfactants
07/05/2007US20070151661 Etched dielectric film in hard disk drives
07/04/2007CN1990541A Crosslinkabe elastomer compositions, process for preparation, and use thereof
07/04/2007CN1324111C Fluorinated surfactants for aqueous acid etch solutions
07/04/2007CN1324110C Fluorinated surfactants for buffered acid etch solutions
07/03/2007US7238295 Regeneration process of etching solution, etching process, and etching system
06/2007
06/28/2007US20070148978 Slurry compositions, methods of polishing polysilicon layers using the slurry compositions and methods of manufacturing semiconductor devices using the slurry compositions
06/28/2007US20070148810 Functional paste
06/28/2007US20070145327 prepared by dispersing the hydrophobic silicon dioxide powder, dispersing agent containing polyoxyalkylene glycol modified by alkyl or phenyl acid; shows no pronounced structural viscosity or thixotropy and has a high stability
06/28/2007US20070145014 Polishing composition for glass substrate
06/28/2007US20070145012 Slurry and method for chemical-mechanical polishing
06/28/2007US20070145009 Etch Compositions and Methods of Processing a Substrate
06/28/2007US20070145003 Method of etching semiconductor device
06/26/2007US7235188 Aqueous phosphoric acid compositions for cleaning semiconductor devices
06/21/2007US20070138142 Microetching composition and method of using the same
06/20/2007CN1322105C Cleaning solution and manufacturing method for semiconductor device
06/19/2007US7232529 Oxidizing agent; water; a protective film-forming agent; and a water-soluble polymer, especially alginic acid, pectic acid, agar, curdlan, pullulan, polyvinyl pyrrolidone or polyacrolein; useful in forming wirings of semiconductors
06/14/2007WO2007067362A1 In situ fluoride ion-generating compositions and uses thereof
06/14/2007US20070135655 Use of fluorinated additives in the etching or polishing of integrated circuits
06/14/2007US20070131899 Composition for polishing semiconductor layers
06/13/2007EP1381656A4 Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
06/12/2007US7229929 Multi-layer gate stack
06/12/2007US7229570 To polish and remove a barrier metal film
06/12/2007US7229569 For manufacturing a wiring using low resistance copper
06/07/2007WO2007064593A1 Polymer etchant and method of using same
06/07/2007US20070128873 Aqueous dispersion for cmp, polishing method and method for manufacturing semiconductor device
06/06/2007CN1320847C Liquid crystal polymers for flexible circuits
06/06/2007CN1320608C Etching agent and etching method
06/06/2007CN1320078C Polishing composition
05/2007
05/31/2007US20070120090 System for the Preferential Removal of Silicon Oxide
05/31/2007US20070120089 Polymer etchant and method of using same
05/29/2007US7223352 Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
05/24/2007WO2007058774A1 Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
05/23/2007CN1966594A Polishing composition for metal cmp
05/22/2007US7220676 Carboxylic acids having either hydroxyl or mercapto groups, monocarboxylic acids, dicarboxylic acids and salts thereof, an abrasive and water; reducing edge rounding (roll-off) of hard discs to increase recording capacity; polishing
05/18/2007WO2006132906A3 Pretreatment compositions
05/17/2007US20070111532 PAA-based etchant, methods of using same, and resultant structures
05/17/2007US20070108404 Method of selectively depositing a thin film material at a semiconductor interface
05/17/2007US20070107750 Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers
05/16/2007CN1962507A Production method of acid pickled glass with mandarin duck pattern effect
05/10/2007US20070102664 polish the polycrystalline silicon surface with a slurry comprising a non-ionic perfluoroalkyl sulfonyl surfactant; planarization of integrated circuit in semiconductor manufacturing processes; prevent the problem of dishing and improve the within-wafer-non-uniformity
05/09/2007CN1958717A Release agent of bonding agent in epoxies, and preparation method
05/02/2007CN1955253A Resin-impregnated base substrate and method for producing the same
05/01/2007US7211484 Method of manufacturing flash memory device
05/01/2007US7211200 Wet etch for selectively removing a metal nitride extrusion comprising: an oxidizing agent; a chelating agent; and at least a portion of a metal nitride extrusion that results from the selective dissolution of the metal nitride
04/2007
04/26/2007WO2007047454A2 Process and composition for electrochemical mechanical polishing
04/26/2007WO2007046790A2 Chemical for data destruction
04/26/2007US20070093061 Solvent removal of photoresist mask and gold impregnated residue and process
04/26/2007US20070090325 Etching solution for silicon oxide and method of manufacturing a semiconductor device using the same
04/19/2007US20070084828 Polishing composition for a semiconductor substrate
04/18/2007CN1311056C An etchant for a wiring, a method for manufacturing the wiring using the etchant, a thin film transistor array panel including the wiring, and a method for manufacturing the same
04/17/2007US7205245 Method of forming trench isolation within a semiconductor substrate
04/17/2007US7204936 Containing roll-off reducing agent , used in polishing the substrate for precision parts
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