| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 04/03/2008 | US20080079060 Dual function finfet structure and method for fabrication thereof |
| 04/03/2008 | US20080079059 Method of manufacturing a nonvolatile semiconductor memory device and select gate device having a stacked gate structure |
| 04/03/2008 | US20080079058 Nonvolatile semiconductor memory and a fabrication method for the same |
| 04/03/2008 | US20080079057 Aging device |
| 04/03/2008 | US20080079056 Semiconductor memory device and method of manufacturing the same |
| 04/03/2008 | US20080079055 Non-volatile memory device |
| 04/03/2008 | US20080079054 Nonvolatile memory device and method of manufacturing the same |
| 04/03/2008 | US20080079053 Transistor surround gate structure with silicon-on-insulator isolation for memory cells, memory arrays, memory devices and systems and methods of forming same |
| 04/03/2008 | US20080079052 Non-volatile memory with local boosting control implant |
| 04/03/2008 | US20080079051 Varactor with halo implant regions of opposite polarity |
| 04/03/2008 | US20080079047 Memory device and method of reading/writing data from/into a memory device |
| 04/03/2008 | US20080079041 Gate-all-around type semiconductor device and method of manufacturing the same |
| 04/03/2008 | US20080079040 Transistor And Method For Manufacturing The Same |
| 04/03/2008 | US20080079039 Field effect transistor comprising a stressed channel region and method of forming the same |
| 04/03/2008 | US20080079038 Semiconductor devices with gate insulation layers having different thicknesses and methods of forming the same |
| 04/03/2008 | US20080079037 Field effect device including inverted v shaped channel region and method for fabrication thereof |
| 04/03/2008 | US20080079035 Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatch |
| 04/03/2008 | US20080079034 Semiconductor device including field-effect transistor |
| 04/03/2008 | US20080079033 Stressed field effect transistor and methods for its fabrication |
| 04/03/2008 | US20080079029 Multi-terminal electrically actuated switch |
| 04/03/2008 | US20080079027 Field effect devices having a gate controlled via a nanotube switching element |
| 04/03/2008 | US20080079024 Semiconductor heterostructures having reduced dislocation pile-ups and related methods |
| 04/03/2008 | US20080079020 High breakdown voltage diode and method of forming same |
| 04/03/2008 | US20080079012 Illuminated devices utilizing transparent light active sheet material with integrated light emitting diode (LED), and methods and kit therefor |
| 04/03/2008 | US20080079010 Thin film transistor panel and manufacturing method thereof |
| 04/03/2008 | US20080079009 Semiconductor device |
| 04/03/2008 | US20080079008 Silicon carbide semiconductor device and method for manufacturing the same |
| 04/03/2008 | US20080079007 Thin-film semiconductor device, display, and method for manufacturing thin film semiconductor device |
| 04/03/2008 | US20080079006 Signal line for a display device, etchant, thin film transistor panel, and method for manufacturing the same |
| 04/03/2008 | US20080079005 System for displaying images and method for fabricating the same |
| 04/03/2008 | US20080079004 Field insulator fet device and fabrication mehtod thereof |
| 04/03/2008 | US20080079003 Dual crystal orientation circuit devices on the same substrate |
| 04/03/2008 | US20080079001 Display device and electronic device |
| 04/03/2008 | US20080078999 Multi-domain vertical alignment pixel structure and fabrication method thereof |
| 04/03/2008 | US20080078998 Semiconductor device |
| 04/03/2008 | US20080078997 Method for forming a bipolar transistor device with self-aligned raised extrinsic base |
| 04/03/2008 | US20080078995 Chip structure |
| 04/03/2008 | US20080078991 Organic light emitting display and fabricating method thereof and moving device therefor |
| 04/03/2008 | US20080078990 Copolymer, composition for forming banks, and method for forming banks using the composition |
| 04/03/2008 | US20080078988 Strained Si/SiGe/SOI islands and processes of making same |
| 04/03/2008 | US20080078982 Current focusing memory architecture for use in electrical probe-based memory storage |
| 04/03/2008 | US20080078439 Polarization-induced tunnel junction |
| 04/03/2008 | DE19809554B4 Siliziumkarbidhalbleitervorrichtung Silicon carbide semiconductor device |
| 04/03/2008 | DE10344038B4 Junction-Feldeffekttransistor Junction field-effect transistor |
| 04/03/2008 | DE10328008B4 Integrierte Schaltungsanordnung mit pnp- und npn-Bipolartransistoren sowie Herstellungsverfahren An integrated circuit device with PNP and NPN bipolar transistors and manufacturing processes |
| 04/03/2008 | DE10317096B4 Verfahren zur Herstellung von komplementären bipolaren Transistoren mit SiGe-Basisregionen A process for producing complementary bipolar transistors with SiGe base regions |
| 04/03/2008 | DE10313712B4 Laterales mittels Feldeffekt steuerbares Halbleiterbauelement für HF-Anwendungen Lateral using field-effect-controllable semiconductor device for RF Applications |
| 04/03/2008 | DE10229182B4 Verfahren zur Herstellung einer gestapelten Chip-Packung A process for producing a stacked chip package |
| 04/03/2008 | DE102007024112A1 Semiconductor device i.e. insulated-gate bipolar transistor, has contact regions with section that exhibits small breadth on emitter-doping layers than other sections when breadth extends in direction that cuts ditches |
| 04/03/2008 | DE102006049158A1 Transistor, Speicherzellenfeld und Verfahren zur Herstellung eines Transistors Transistor, memory cell array and method of manufacturing a transistor |
| 04/03/2008 | DE102006046853A1 Semiconductor component has semiconductor body with cell field area, and trenches lie in transient area between depth of body region and depth of cell field area on surface of semiconductor body |
| 04/03/2008 | DE102006046845A1 Semiconductor component e.g. bipolar transistor, has charge carrier compensation zone between drift zone and connection zone, where doping concentration of charge carrier compensation zone is greater than concentration of connection zone |
| 04/03/2008 | DE102006046844A1 Semiconductor component e.g. thyristor, has n conductor type field top zone provided with higher net-doping material concentration than section of another n conductor type semiconductor zone |
| 04/03/2008 | DE102006046788A1 Method for manufacturing semiconductor circuit arrangement, involves preparing semiconductor substrate and implementing processing on back side of semiconductor substrate |
| 04/03/2008 | DE102006046380A1 Field-effect transistor e.g. P-type field-effect transistor, forming method, involves filling recess in substrate with semiconductor material that includes lattice constant, and forming gate electrode over filled recess |
| 04/03/2008 | DE102006045125A1 Three dimensional polysilicon structure producing method for formation of e.g. complementary metal oxide semiconductor memory device, involves structuring base layer for forming upper layer of polysilicon structure |
| 04/03/2008 | DE102006044840A1 Integrated transistor device has semiconductor substrate, where column is formed in semiconductor substrate, and source or drain area is formed within upper area of column |
| 04/03/2008 | DE102005047054B4 Leistungs-MOS-Transistor mit einer SiC-Driftzone und Verfahren zur Herstellung eines Leistungs-MOS-Transistors A power MOS transistor having a SiC drift zone and process for producing a power MOS transistor |
| 04/03/2008 | DE102004009600B4 Selbstorganisierende organische Dielektrikumsschichten auf der Basis von Phosphonsäure-Derivaten Self-organizing organic dielectric layers on the basis of phosphonic acid derivatives |
| 04/02/2008 | EP1906454A2 Semiconductor device |
| 04/02/2008 | EP1906453A2 Power semiconductor device |
| 04/02/2008 | EP1906449A1 Semiconductor device and electric device |
| 04/02/2008 | EP1906442A2 Fabrication of a wiring pattern and of an active matrix substrate |
| 04/02/2008 | EP1906440A1 Semiconductor device |
| 04/02/2008 | EP1905098A2 Ldmos transistor |
| 04/02/2008 | EP1905097A2 Nitride-based transistors and fabrication methods with an etch stop layer |
| 04/02/2008 | EP1905096A2 Switch mode power amplifier using fet with field plate extension |
| 04/02/2008 | EP1905095A2 Gate electrode structures and methods of manufacture |
| 04/02/2008 | EP1905094A2 High electron mobility electronic device structures comprising native substrates and methods for making the same |
| 04/02/2008 | EP1905093A1 Semiconductor device including a channel with a non-semiconductor monolayer and associated methods |
| 04/02/2008 | EP1905092A1 Semiconductor device including a strained superlattice between at least one pair of spaced apart stress regions and associated methods |
| 04/02/2008 | EP1905091A1 Semiconductor device including a strained superlattice and overlying stress layer and related methods |
| 04/02/2008 | EP1905090A1 Semiconductor device including a strained superlattice layer above a stress layer and associated methods |
| 04/02/2008 | EP1905089A1 Semiconductor device and a method for production thereof |
| 04/02/2008 | EP1905088A2 Packaging technique for the fabrication of polarized light emitting diodes |
| 04/02/2008 | EP1905087A1 Ccd sensor and method for expanding dynamic range of ccd sensor |
| 04/02/2008 | EP1905081A2 Multi-level interconnections for an integrated circuit chip |
| 04/02/2008 | EP1905074A2 High performance capacitors in planar back gates cmos |
| 04/02/2008 | EP1905072A2 Substrates including a capping layer on electrically conductive regions |
| 04/02/2008 | EP1905068A2 Technique for reducing silicide non-uniformities by adapting avertical dopant profile |
| 04/02/2008 | EP1690296A4 Semiconductor device, electronic device and electronic apparatus |
| 04/02/2008 | EP1412991B1 Solutions of organic semiconductors |
| 04/02/2008 | EP1299914B1 Field effect transistor |
| 04/02/2008 | CN101156248A Structure and method for realizing a microelectronic device provided with a number of quantum wires capable of forming one or more transistor channels |
| 04/02/2008 | CN101156247A Method and apparatus for fabricating polycrystalline silicon film using transparent substrate |
| 04/02/2008 | CN101156246A Ultra-thin hf-doped-silicon oxynitride film for high performance cmos applications and method of manufacture |
| 04/02/2008 | CN101156245A Organic el display device, organic transistor and methods for manufacturing such organic el display device and organic transistor |
| 04/02/2008 | CN101156061A Substrate inspecting apparatus |
| 04/02/2008 | CN101154690A Semiconductor device |
| 04/02/2008 | CN101154689A Semiconductor device |
| 04/02/2008 | CN101154688A Nonvolatile semiconductor memory |
| 04/02/2008 | CN101154687A Nonvolatile semiconductor memory element and nonvolatile semiconductor memory device |
| 04/02/2008 | CN101154686A Power mosfet, semiconductor device including the power mosfet, and method for making the power mosfet |
| 04/02/2008 | CN101154685A High withstand voltage trenched mos transistor and manufacturing method thereof |
| 04/02/2008 | CN101154684A High withstand voltage transistor and manufacturing method thereof, and semiconductor device adopting high withstand voltage transistor |
| 04/02/2008 | CN101154683A Transistor structure and its manufacturing method |
| 04/02/2008 | CN101154682A Metal oxide semiconductor device and method of manufacturing the same |
| 04/02/2008 | CN101154681A High-voltage transistor adopting non-homogeneous gate oxide and its manufacturing method |
| 04/02/2008 | CN101154680A Semiconductor device having asymmetric bulb-type recess gate and method for manufacturing the same |
| 04/02/2008 | CN101154671A Pixel structure and its manufacturing method |