| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/10/2008 | WO2008012737A3 Method of manufacturing a semiconductor device and a device manufactured by the method |
| 04/10/2008 | WO2008008672A3 Bi-directional mosfet power switch with single metal layer |
| 04/10/2008 | WO2007145843A3 Bidirectional buffer with slew rate control and method of bidirectionally transmitting signals with slew rate control |
| 04/10/2008 | WO2007143260A3 Esd protection circuit with isolated diode element and method thereof |
| 04/10/2008 | WO2007133302A3 Semiconductor components and systems having encapsulated through wire interconnects (twi) and wafer level methods of fabrication |
| 04/10/2008 | WO2007133280A3 Superjunction power mosfet |
| 04/10/2008 | WO2007120721A3 Non-volatile memory in cmos logic process and method of operation thereof |
| 04/10/2008 | WO2007112361A3 Structure and method of forming electrodeposited contacts |
| 04/10/2008 | WO2007111745A3 Split gate memory cell in a finfet |
| 04/10/2008 | WO2007103854A3 Hybrid orientation scheme for standard orthogonal circuits |
| 04/10/2008 | WO2007073496A3 Lighting device |
| 04/10/2008 | US20080086438 Adiabatic quantum computation with superconducting qubits |
| 04/10/2008 | US20080085580 Methods for uniform doping of non-planar transistor structures |
| 04/10/2008 | US20080085567 Tunneling magnetoresistive element, semiconductor junction element, magnetic memory and semiconductor light emitting element |
| 04/10/2008 | US20080084745 Dual-gate device and method |
| 04/10/2008 | US20080084744 Method of making and operating a semiconductor memory array of floating gate memory cells with program/erase and select gates |
| 04/10/2008 | US20080084728 Semiconductor device |
| 04/10/2008 | US20080083970 Method and materials for growing III-nitride semiconductor compounds containing aluminum |
| 04/10/2008 | US20080083969 Rectifier circuit, semiconductor device using the rectifier circuit, and driving method thereof |
| 04/10/2008 | US20080083968 Bipolar Transistor And Method Of Manufacturing The Same |
| 04/10/2008 | US20080083967 Capacitor integrated in semiconductor device |
| 04/10/2008 | US20080083966 Schottky barrier semiconductor device |
| 04/10/2008 | US20080083960 Package structure and packaging method of mems microphone |
| 04/10/2008 | US20080083959 Stacked structures and methods of forming stacked structures |
| 04/10/2008 | US20080083958 Micro-electromechanical system package |
| 04/10/2008 | US20080083957 Micro-electromechanical system package |
| 04/10/2008 | US20080083956 Semiconductor device and manufacturing method thereof |
| 04/10/2008 | US20080083955 Intrinsically stressed liner and fabrication methods thereof |
| 04/10/2008 | US20080083954 Semiconductor device and manufacturing method thereof |
| 04/10/2008 | US20080083953 Method of manufacturing a semiconductor device |
| 04/10/2008 | US20080083950 Fused nanocrystal thin film semiconductor and method |
| 04/10/2008 | US20080083947 Semiconductor device and method of fabricating the same |
| 04/10/2008 | US20080083946 Memory cell system with charge trap |
| 04/10/2008 | US20080083945 Semiconductor memory array of floating gate memory cells with program/erase and select gates |
| 04/10/2008 | US20080083944 Nand-type flash memory devices including selection transistors with an anti-punchthrough impurity region and methods of fabricating the same |
| 04/10/2008 | US20080083943 Dual-gate memory device and optimization of electrical interaction between front and back gates to enable scaling |
| 04/10/2008 | US20080083942 Single-Poly Non-Volatile Memory Cell |
| 04/10/2008 | US20080083941 Self-aligned strap for embedded trench memory on hybrid orientation substrate |
| 04/10/2008 | US20080083935 Local collector implant structure for heterojunction bipolar transistors |
| 04/10/2008 | US20080083933 Semiconductor device and method for fabricating the same |
| 04/10/2008 | US20080083928 Crystallization apparatus and method, manufacturing method of electronic device, electronic device, and optical modulation element |
| 04/10/2008 | US20080083927 Display device and method of manufacturing the same |
| 04/10/2008 | US20080083926 Printing device structures using nanoparticles |
| 04/10/2008 | US20080083925 Solid-state imaging device |
| 04/10/2008 | US20080083924 Thin film transistor having chalcogenide layer and method of fabricating the thin film transistor |
| 04/10/2008 | US20080083917 depositing a multi-temperature phase-change material on the second layer, patterning second layer using the multi-temperature phase-change material as a mask, reflowing the multi-temperature phase-change material, patterning the first layer using reflowed multi-temperature phase-change materal as a mask |
| 04/10/2008 | DE112006000241T5 Graben-Gateelektrode für FinFET-Anordnung Trench gate electrode for FinFET arrangement |
| 04/10/2008 | DE112006000208T5 Speicherbauelement mit trapezförmigen Bitleitungen und Verfahren zur Herstellung desselben Memory device with the same trapezoidal bit lines and methods for preparing |
| 04/10/2008 | DE112005003270T5 Polymerverbindung und Polymerlichtemittervorrichtung unter Verwendung derselben Polymer compound and polymer light-emitting device using the same |
| 04/10/2008 | DE102006047489A1 Edge termination for semiconductor component, has semiconductor body which has edge with peripheral area of former type of conductivity, and latter type of conductivity is provided into peripheral area of charging compensation ranges |
| 04/10/2008 | DE102006047244A1 Semiconductor device e.g. MOSFET, for use in supply network, has monocrystalline silicon body, which includes semiconductor device structure with regions of porous-microcrystalline silicon |
| 04/10/2008 | DE102006037510B3 Verfahren zum Herstellen einer Grabenstruktur, die Verwendung dieses Verfahrens zur Herstellung einer Halbleiteranordnung und Halbleiteranordnung mit einer Grabenstruktur A method of manufacturing a grave structure, the use of this method for producing a semiconductor device and semiconductor device structure with a grave |
| 04/10/2008 | DE102004025112B4 Verfahren zur Implantierung eines Halbleiterwafers und integrierte Halbleiterschaltung A method for implantation of a semiconductor wafer and a semiconductor integrated circuit |
| 04/10/2008 | DE10112463B4 SJ-Halbleiterbauelement SJ-semiconductor device |
| 04/10/2008 | CA2663668A1 Semiconductor device with circuits formed with essentially uniform pattern density |
| 04/09/2008 | EP1909332A1 Power Semiconductor device |
| 04/09/2008 | EP1909331A2 Trench-gate vertical MOSFET manufacturing method |
| 04/09/2008 | EP1909330A1 Semiconductor device |
| 04/09/2008 | EP1909329A1 Semiconductor device |
| 04/09/2008 | EP1909327A2 Thin film transistor panel and manufacturing method thereof |
| 04/09/2008 | EP1909326A1 Semiconductor element and electric device |
| 04/09/2008 | EP1909325A1 Semiconductor element and electric device |
| 04/09/2008 | EP1909316A1 Transistor and method for operating same |
| 04/09/2008 | EP1909311A2 Charge trap memory device |
| 04/09/2008 | EP1909288A1 Cell operation methods using gate-injection for floating gate nand flash memory |
| 04/09/2008 | EP1908134A1 Hybrid nanocomposite semiconductor material and method of producing inorganic semiconductor therefor |
| 04/09/2008 | EP1908121A1 Drain-extended mosfets with diode clamp |
| 04/09/2008 | EP1908120A1 Method for making electronic devices using metal oxide nanoparticles |
| 04/09/2008 | EP1908119A2 Semiconductor component with a drift region and with a drift control region |
| 04/09/2008 | EP1908118A2 Method for producing semiconductor device |
| 04/09/2008 | EP1908117A2 Power field effect transistor and manufacturing method thereof |
| 04/09/2008 | EP1908116A1 Power semiconductor device |
| 04/09/2008 | EP1908114A2 Method for making a heterojunction bipolar transistor |
| 04/09/2008 | EP1908113A1 Microelectronic device provided with transistors coated with a piezoelectric layer |
| 04/09/2008 | EP1908111A2 Virtual body-contacted trigate |
| 04/09/2008 | EP1908101A1 Semiconductor power device with multiple drain and corresponding manufacturing process |
| 04/09/2008 | EP1908096A1 Power field effect transistor and manufacturing method thereof |
| 04/09/2008 | EP1908049A2 Semiconductor half-bridge module with low inductance |
| 04/09/2008 | EP1907992A1 Semiconductor device |
| 04/09/2008 | EP1692717A4 REDUCTION OF BORON DIFFUSIVITY IN pFETs |
| 04/09/2008 | EP1417721A4 Power mosfet with deep implanted junctions |
| 04/09/2008 | EP1396867B1 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy |
| 04/09/2008 | EP1396031A4 Dmos with zener diode for esd protection |
| 04/09/2008 | EP1145279B1 Semiconductor element with a tungsten oxide layer and method for its production |
| 04/09/2008 | EP1091393B1 Electrode for semiconductor device and its manufacturing method |
| 04/09/2008 | CN101160667A A hybrid bulk-soi 6t-sram cell for improved cell stability and performance |
| 04/09/2008 | CN101160666A A diode structure |
| 04/09/2008 | CN101160665A Semiconductor device |
| 04/09/2008 | CN101160664A Compressive sige <110> growth and structure of mosfet devices |
| 04/09/2008 | CN101160663A Semiconductor device and making thereof |
| 04/09/2008 | CN101160661A Metal-insulator-metal capacitor and method of fabrication |
| 04/09/2008 | CN101160642A 掺硼的金刚石半导体 Boron-doped diamond semiconductor |
| 04/09/2008 | CN101159292A Charge trap memory device |
| 04/09/2008 | CN101159291A Reset lateral wall floatinggrid memory structure flash memory |
| 04/09/2008 | CN101159290A Semiconductor structure and manufacture method thereof |
| 04/09/2008 | CN101159289A Fets with self-aligned bodies and backgate holes |
| 04/09/2008 | CN101159288A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing |
| 04/09/2008 | CN101159287A Tunnel transistor having spin-dependent transfer characteristic and nonvolatile memory using same |
| 04/09/2008 | CN101159286A Magnetic transistor structure |
| 04/09/2008 | CN101159285A Semiconductor device and method for manufacturing the same |