Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2008
05/15/2008WO2008056698A1 Silicon carbide semiconductor device and process for producing the same
05/15/2008WO2008056614A1 Reflow method, pattern-forming method, and method for manufacturing tft
05/15/2008WO2008056610A1 Reflow method, pattern-forming method, and method for manufacturing tft
05/15/2008WO2008056571A1 Particle arranging device and particle arranging method
05/15/2008WO2008056559A1 Semiconductor integrated circuit
05/15/2008WO2008056557A1 Method for forming silicon based thin film by plasma cvd method
05/15/2008WO2008056556A1 Method and device for forming silicon dot and silicon dot and method and device for forming substrate with insulating film
05/15/2008WO2008055987A1 Transistor arrangement for an analog switch, and method for designing the same
05/15/2008WO2008027027A3 Transistor with fluorine treatment
05/15/2008WO2008003041A3 Circuit and method of reducing body diode reverse recovery time of lateral power semiconduction devices
05/15/2008WO2007143208A3 Near natural breakdown device
05/15/2008WO2007120345A3 Charge balance insulated gate bipolar transistor
05/15/2008WO2007101239A3 Flip-chip device having underfill in controlled gap
05/15/2008WO2000058806A3 Ferroelectric based memory devices utilizing hydrogen barriers and getters
05/15/2008US20080113499 Semiconductor device with mushroom electrode and manufacture method thereof
05/15/2008US20080113497 SEMICONDUCTOR DEVICE ON GaN SUBSTRATE HAVING SURFACE BIDIRECTIONALLY INCLINED TOWARD <1-100> AND <11-20> DIRECTIONS RELATIVE TO {0001} CRYSTAL PLANES
05/15/2008US20080113488 Method of Fabricating A Semiconductor Device
05/15/2008US20080113487 Method of Fabricating A Semiconductor Device
05/15/2008US20080113482 Method for enhancing field oxide
05/15/2008US20080113474 Methods of forming semiconductor-on-insulating (soi) field effect transistors with body contacts
05/15/2008US20080113471 Method of Making Multi-Chip Package with High-Speed Serial Communications between Semiconductor Dice
05/15/2008US20080113454 Processing systems and methods for semiconductor devices
05/15/2008US20080112228 Non-planar flash memory array with shielded floating gates on silicon mesas
05/15/2008US20080111641 High-resolution varactors, single-edge triggered digitally controlled oscillators, and all-digital phase-locked loops using the same
05/15/2008US20080111565 Concept of compensating for piezo influences on integrated circuitry
05/15/2008US20080111214 Hybrid orientation substrate and method for fabrication thereof
05/15/2008US20080111209 Semiconductor device and its manufacturing method
05/15/2008US20080111208 Semiconductor devices having a gate electrode and methods of fabricating the same
05/15/2008US20080111203 Wafer-level packaging of micro devices
05/15/2008US20080111202 Forming conductive stud for semiconductive devices
05/15/2008US20080111201 Semiconductor device and method for manufacturing the same
05/15/2008US20080111200 Forming conductive stud for semiconductive devices
05/15/2008US20080111199 Semiconductor device having a pair of fins and method of manufacturing the same
05/15/2008US20080111197 Semiconductor device including a misfet having divided source/drain regions
05/15/2008US20080111195 Multi-gate Field Effect Transistor
05/15/2008US20080111194 Semiconductor device including a finfet
05/15/2008US20080111187 Semiconductor memory device and manufacturing method thereof
05/15/2008US20080111186 Field-Effect Transistor Structure and Method Therefor
05/15/2008US20080111185 Asymmetric multi-gated transistor and method for forming
05/15/2008US20080111184 PROCESS FOR FABRICATION OF FINFETs
05/15/2008US20080111183 Flash memory device and method of manufacturing the same
05/15/2008US20080111182 Forming buried contact etch stop layer (CESL) in semiconductor devices self-aligned to diffusion
05/15/2008US20080111181 Nonvolatile memory devices, methods of operating the same and methods of forming the same
05/15/2008US20080111180 Split gate flash memory device having self-aligned control gate and method of manufacturing the same
05/15/2008US20080111179 Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same
05/15/2008US20080111178 Nonvolatile semiconductor memory device and method for manufacturing the same
05/15/2008US20080111177 Non-volatile memory cell and non-volatile memory device using said cell
05/15/2008US20080111176 Tunable capacitor
05/15/2008US20080111173 Semiconductor device and method for manufacturing the same
05/15/2008US20080111172 Semiconductor device and method for manufacturing the same
05/15/2008US20080111171 Node structures under capacitor in ferroelectric random access memory device and methods of forming the same
05/15/2008US20080111168 Transistor and method for manufacturing same
05/15/2008US20080111167 Method for manufacturing semiconductor device and semiconductor device
05/15/2008US20080111166 Removable spacer
05/15/2008US20080111165 Transfer transistor of cmos image sensor
05/15/2008US20080111164 via is formed of one or more cylindrical structures made up of carbon nanotubes; good resistance to migration causing the breaking of a wiring line, and having improved reliability
05/15/2008US20080111163 Field effect transistor with a fin structure
05/15/2008US20080111162 Structure and method for dual surface orientations for cmos transistors
05/15/2008US20080111161 Protective structure for semiconductor sensors
05/15/2008US20080111159 Image sensor including spatially different active and dark pixel interconnect patterns
05/15/2008US20080111157 High electron mobility transistor semiconductor device and fabrication method thereof
05/15/2008US20080111156 High Performance FET Devices and Methods Thereof
05/15/2008US20080111153 Electronic device including a heterojunction region and a process for forming the electronic device
05/15/2008US20080111149 Light-emitting diode chip package body and packaging method thereof
05/15/2008US20080111147 Phosphor-Converted LED Devices Having Improved Light Distribution Uniformity
05/15/2008US20080111136 Tft-lcd pixel unit and method for manufacturing the same
05/15/2008US20080111134 Semiconductor device, method of making the same and liquid crystal display device
05/15/2008US20080111133 Thin film transistor and method of fabricating the same
05/15/2008US20080111132 Thin film transistor array substrate and fbricating method thereof
05/15/2008US20080111127 Ferrocene-containing conductive polymer, organic memory device using the same and fabrication method of the organic memory device
05/15/2008DE19920757B4 Verfahren zum Bilden eines nicht-linearen Schaltelementes auf einer integrierten Schaltung und elektrische Zwischenverbindungsstruktur A method of forming a non-linear switching element on an integrated circuit and electrical interconnect structure
05/15/2008DE112006001866T5 Gefalzter Rahmenträger für MOSFET GBA Folded frame support for MOSFET GBA
05/15/2008DE102006052754A1 Transistor, Inverter und Verfahren zur Herstellung eines Transistors Transistor, and inverter process for the preparation of a transistor
05/15/2008DE102006052192A1 Porous substrate useful in electronic component for generating periodic pulsation under constant direct current voltage, has impermeable openings and permeable pores that are locked at a side of the substrate with non-porous cover layer
05/15/2008CA2668862A1 Silicon carbide semiconductor device and method of manufacturing the same
05/14/2008EP1921892A1 Capacitor microphone and method for manufacturing capacitor microphone
05/14/2008EP1921681A2 Thin film transistor using an oriented zinc oxide layer
05/14/2008EP1921673A2 Method for manufacturing semiconductor substrate
05/14/2008EP1921669A1 GaN based HEMTs with buried field plates
05/14/2008EP1920467A2 Fin-type field effect transistor
05/14/2008EP1920466A1 Semiconductor device having a semiconductor-on-insulator (soi) configuration and including a superlattice on a thin semiconductor layer and associated methods
05/14/2008EP1668716A4 Vertical organic field effect transistor
05/14/2008EP1396027A4 Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same
05/14/2008EP1042817B1 Bipolar high-volt power component
05/14/2008EP0898785B1 Active matrix displays and method of making
05/14/2008CN101180739A Edge termination for semiconductor device
05/14/2008CN101180738A Complementary asymmetric high voltage devices and method of fabrication
05/14/2008CN101180737A Power semiconductor devices and methods of manufacture
05/14/2008CN101180736A Cathode cell design
05/14/2008CN101180735A Field effect transistor
05/14/2008CN101180734A Semiconductor device and method for manufacturing same
05/14/2008CN101180733A Systems and methods for maintaining performance at a reduced power
05/14/2008CN101180725A Method for fabricating soi device
05/14/2008CN101180705A Manufacturing method for semiconductor device
05/14/2008CN101180516A Gyroscopes
05/14/2008CN101179098A Metal/gallium nitride aluminum /gallium nitride lateral direction schottky diode with low current collection side effect and method of producing the same
05/14/2008CN101179097A SOI high-pressure component
05/14/2008CN101179096A Film transistor and its making method
05/14/2008CN101179095A Field-effect tranisistor realizing memory function and method of producing the same
05/14/2008CN101179094A MOSFET with parallel laminar drain structure and drain manufacturing method thereof