Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2008
04/30/2008EP1461832A4 Organic semiconductor and method
04/30/2008EP1358681A4 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
04/30/2008DE19818060B4 Beschleunigungssensor, Winkelbeschleunigungssensor und Herstellverfahren für diese Sensoren Acceleration sensor, angular acceleration sensor and manufacturing method for these sensors
04/30/2008DE19708031B4 Nichtflüchtiger Halbleiterspeicher und Verfahren zu dessen Herstellung A non-volatile semiconductor memory and method for its production
04/30/2008DE112006001589T5 Halbleiterbauelementstrukturen und Verfahren zur Bildung von Halbleiterstrukturen A semiconductor device structures and methods of forming semiconductor structures
04/30/2008DE112006001520T5 Prozess für die Herstellung erhabener Source- und Drain-Gebiete mit zu entfernenden Abstandshaltern Process for forming raised source and drain regions to be removed with spacers
04/30/2008DE112006000133T5 Eine dielektrische Schicht mit hoher dielektrischer Konstante nutzender Quantentopf-Transistor A dielectric layer having a high dielectric constant-use quantum-well transistor
04/30/2008DE112005003584T5 Trench-Metalloxid-Halbleiter-Feldeffekttransistor Trench metal-oxide-semiconductor field-effect transistor
04/30/2008DE10250204B4 Verfahren zur Herstellung von Kollektorbereichen einer Transistorstruktur A process for producing collector regions of a transistor structure
04/30/2008DE102007034349A1 Halbleitervorrichtung, welche mit einer schwebenden Elektrode versehen ist A semiconductor device, which is provided with a floating electrode
04/30/2008DE102007011837A1 Integrated circuit e.g. dynamic RAM, for use in e.g. personal digital assistant, has gate-stack with resistive switching element whose conductivity is changed for changing on-resistance of semiconductor-transistor
04/30/2008DE102006050338A1 Semiconductor component i.e. insulated gate bipolar transistor, has drift zone including region that passes through region of semiconductor component in polarity of charge carriers and another region in reverse polarity
04/30/2008DE102005045542B4 Nicht-Planare III-Nitrid-Leistungshalbleitervorrichtung mit einem lateralen Leitungspfad Non-planar III-nitride power semiconductor device with a lateral conduction path
04/30/2008DE102004061349B4 Verfahren zum Herstellen eines MOS-Feldeffekttransistors A method of manufacturing a MOS field effect transistor
04/30/2008DE102004027691B4 Verfahren zum Herstellen eines Steges aus einem Halbleitermaterial A method of manufacturing a web made of a semiconductor material
04/30/2008CN101171694A Nitride semiconductor element and production method therefor
04/30/2008CN101171690A Ultrascalable vertical MOS transistor with planar contacts
04/30/2008CN101171682A Metal-insulator-metal capacitor manufactured using etchback
04/30/2008CN101171665A Method of fabrication of AI/GE bonding in a wafer packaging environment and a product produced therefrom
04/30/2008CN101170136A Junction field effect tube and method of manufacturing the same
04/30/2008CN101170135A Non volatile memory device possessing charge trapping layer and its manufacture method
04/30/2008CN101170134A Full consumption Air_A1N_SOI MOSFETs part structure and its making method
04/30/2008CN101170133A Dual bar and dual stress channel full consumption SOI MOSFETs part structure
04/30/2008CN101170132A Modifiable gate stack memory element
04/30/2008CN101170131A 半导体装置 Semiconductor device
04/30/2008CN101170130A Single-wall carbon nanotube heterojunction and method of manufacturing the same, semiconductor device and method of manufacturing the same
04/30/2008CN101170129A Horizontal PNP transistor and its making technology method
04/30/2008CN101170128A Horizontal PNP type audion and its making method
04/30/2008CN101170127A Semiconductor device and its manufacture method
04/30/2008CN101170126A Semiconductor structure and its manufacture method
04/30/2008CN101170112A Semiconductor device and its manufacture method
04/30/2008CN101170109A Semiconductor device and manufacturing method thereof
04/30/2008CN101170079A Semiconductor structure forming method
04/30/2008CN101170066A Semiconductor component and its making method
04/30/2008CN100385757C Semiconductor laser, its manufacturing method, and manufacturing method of electron device
04/30/2008CN100385689C High power, high luminous flux light emitting diode and method of making same
04/30/2008CN100385686C Poly-SiGe schottky barrier diode and its preparing method
04/30/2008CN100385685C Electrically erasable programmable split-gate memory cell
04/30/2008CN100385684C Film transistor and manufacturing method of its lightly mixed drain area
04/30/2008CN100385683C Method for manufacturing thin-film transistor
04/30/2008CN100385682C Method of manufacturing thin-film transistor
04/30/2008CN100385681C Semiconductor device and method for making same
04/30/2008CN100385680C MOSFET and a method of making same
04/30/2008CN100385679C Semiconductor apparatus and method for manufacturing the same
04/30/2008CN100385678C Flash memory with concave grid local SONOS structure and manufacturing method thereof
04/30/2008CN100385677C Field effect transistor, transistor circuit, transistor device and transistor operation method
04/30/2008CN100385676C Silicon carbide horizontal channel buffered gate semiconductor devices
04/30/2008CN100385671C Thin film transistor array substrate and method of fabricating the same
04/30/2008CN100385668C Multi-crystal storage structure, method for forming said structure and semiconductor storage device using said structure
04/30/2008CN100385635C Method and apparatus to increase strain effect in a transistor channel
04/30/2008CN100385634C Method of manufacture thin silicon on insulator (SOI) with recessed channel and devices manufactured thereby
04/30/2008CN100385626C Method of forming gate structures for semiconductor devices and semiconductor device
04/30/2008CN100385625C Polysiliconized metal grid structure and method for making same
04/30/2008CN100385624C Method for making semiconductor device and the semiconductor device
04/30/2008CN100385329C Electronic devices comprising thin-film circuit elements and its manufacturing method
04/30/2008CN100385328C Liquid crystal display device and producing method thereof
04/30/2008CN100385327C Liquid crystal display device
04/30/2008CN100385326C Silicon crystallizing device
04/30/2008CN100385325C Liquid crystal cell process for in-plane switching mode liquid crystal display device
04/30/2008CN100385324C Liquid crystal display device and method of fabricating the same
04/30/2008CN100385323C Liquid crystal display panel,liquid crystal displayer and method for driving liquid crystal display
04/30/2008CN100385322C Thin film transistor panel for liquid crystal display
04/30/2008CN100384607C Device for injection moulding of moulded bodies made from plastic
04/29/2008USRE40275 Method for producing a memory cell
04/29/2008US7366428 Optical receiver
04/29/2008US7366026 Flash memory device and method for fabricating the same, and programming and erasing method thereof
04/29/2008US7366019 Nonvolatile memory
04/29/2008US7366016 Nonvolatile semiconductor memory
04/29/2008US7366015 Semiconductor integrated circuit device, production and operation method thereof
04/29/2008US7365773 CMOS APS with stacked avalanche multiplication layer and low voltage readout electronics
04/29/2008US7365715 Electronic circuit, electronic device and personal computer
04/29/2008US7365578 Semiconductor device with pump circuit
04/29/2008US7365495 Flat panel display
04/29/2008US7365452 Sensor device and output characteristic switching method of sensor device
04/29/2008US7365441 Semiconductor device fabricating apparatus and semiconductor device fabricating method
04/29/2008US7365438 Semiconductor device with semiconductor components connected to one another
04/29/2008US7365437 Method of wet etching vias and articles formed thereby
04/29/2008US7365434 Semiconductor device and manufacturing method for the same
04/29/2008US7365432 Memory cell structure
04/29/2008US7365426 Semiconductor device
04/29/2008US7365413 Reduced power distribution mesh resistance using a modified swiss-cheese slotting pattern
04/29/2008US7365412 Vertical parallel plate capacitor using spacer shaped electrodes and method for fabrication thereof
04/29/2008US7365410 Semiconductor structure having a metallic buffer layer and method for forming
04/29/2008US7365409 Two-transistor pixel with buried reset channel and method of formation
04/29/2008US7365407 Light emitting diode package with direct leadframe heat dissipation
04/29/2008US7365405 Metrology structure and methods
04/29/2008US7365404 Semiconductor device having silicide reaction blocking region
04/29/2008US7365402 LDMOS transistor
04/29/2008US7365401 Dual-plane complementary metal oxide semiconductor
04/29/2008US7365400 Semiconductor device and method for manufacturing the same
04/29/2008US7365399 Structure and method to form semiconductor-on-pores (SOP) for high device performance and low manufacturing cost
04/29/2008US7365398 Compact SRAMs and other multiple transistor structures
04/29/2008US7365395 Artificial dielectrics using nanostructures
04/29/2008US7365394 Process for fabricating thin film transistors
04/29/2008US7365393 Semiconductor device and fabrication method thereof
04/29/2008US7365392 Semiconductor device with integrated trench lateral power MOSFETs and planar devices
04/29/2008US7365391 Semiconductor device and method for manufacturing thereof
04/29/2008US7365390 Method of fabricating recess transistor in integrated circuit device and recess transistor in integrated circuit device fabricated by the same
04/29/2008US7365389 Memory cell having enhanced high-K dielectric
04/29/2008US7365388 Embedded trap direct tunnel non-volatile memory