| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 07/31/2008 | US20080182374 Non-volatile semiconductor memory device |
| 07/31/2008 | US20080182368 Method for production of thin-film semiconductor device |
| 07/31/2008 | US20080182209 Method of Fabricating Semiconductor Device, and Developing Apparatus Using the Method |
| 07/31/2008 | US20080180995 Semiconductor Device With Electrically Floating Body |
| 07/31/2008 | US20080180994 Memory system, semiconductor memory device and method of driving same |
| 07/31/2008 | US20080180974 Power MISFET, semiconductor device and DC/DC converter |
| 07/31/2008 | US20080179762 Layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, and applications of the same |
| 07/31/2008 | US20080179752 Method of making semiconductor device and semiconductor device |
| 07/31/2008 | US20080179743 Electrode, method for producing same and semiconductor device using same |
| 07/31/2008 | US20080179712 Structure and method to form semiconductor-on-pores (sop) for high device performance and low manufacturing cost |
| 07/31/2008 | US20080179708 Semiconductor device and method of disconnecting fuse element |
| 07/31/2008 | US20080179705 Interposing a liquid medium between the optics and a surface of a substrate, such as a silicon wafer, replacing the usual air gap. the wavelength in the liquid is reduced by a factor equal to the refractive index |
| 07/31/2008 | US20080179704 Semiconductor device including switching element and two diodes |
| 07/31/2008 | US20080179703 SCHOTTKY BARRIER DIODES FOR MILLIMETER WAVE SiGe BICMOS APPLICATIONS |
| 07/31/2008 | US20080179698 Piezoresistive sensing structure |
| 07/31/2008 | US20080179697 Electronic device including MEMS devices and holed substrates, in particular of the LGA or BGA type |
| 07/31/2008 | US20080179696 Micromechanical Device with Microfluidic Lubricant Channel |
| 07/31/2008 | US20080179695 Low noise transistor and method of making same |
| 07/31/2008 | US20080179694 Semiconductor device and method for fabricating the same |
| 07/31/2008 | US20080179693 Semiconductor device and method of manufacturing a semiconductor device |
| 07/31/2008 | US20080179689 Metal salicide formation having nitride liner to reduce silicide stringer and encroachment |
| 07/31/2008 | US20080179688 Method and Apparatus for Semiconductor Device with Improved Source/Drain Junctions |
| 07/31/2008 | US20080179686 Cmos transistor and method of making the same |
| 07/31/2008 | US20080179685 Embedded memory in a cmos circuit and methods of forming the same |
| 07/31/2008 | US20080179683 Semiconductor device and method for producing the same |
| 07/31/2008 | US20080179681 Electrostatic discharage protection device having a dual triggered transistor |
| 07/31/2008 | US20080179674 Semiconductor device and method of fabricating the same |
| 07/31/2008 | US20080179672 Lateral semiconductor component with a drift zone having at least one field electrode |
| 07/31/2008 | US20080179671 Semiconductor apparatus |
| 07/31/2008 | US20080179670 Component arrangement including a mos transistor having a field electrode |
| 07/31/2008 | US20080179669 Integrated circuit having a semiconductor arrangement |
| 07/31/2008 | US20080179668 Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET |
| 07/31/2008 | US20080179667 Sub-lithographic gate length transistor using self-assembling polymers |
| 07/31/2008 | US20080179666 Semiconductor device having a trench gate and method for manufacturing |
| 07/31/2008 | US20080179665 Semiconductor Memory Devices and Methods of Forming the Same |
| 07/31/2008 | US20080179664 Semiconductor device with a vertical mosfet including a superlattice and related methods |
| 07/31/2008 | US20080179663 Semiconductor device |
| 07/31/2008 | US20080179661 Enhanced stress transfer in an interlayer dielectric by using an additional stress layer above a dual stress liner in a semiconductor device |
| 07/31/2008 | US20080179660 Contact forming method and related semiconductor device |
| 07/31/2008 | US20080179658 Method of making a semiconductor device having high voltage transistors, non-volatile memory transistors, and logic transistors |
| 07/31/2008 | US20080179657 Semiconductor device having a selectively-grown semiconductor layer |
| 07/31/2008 | US20080179656 Semiconductor device, nonvolatile semiconductor memory device and manufacturing method of semiconductor device |
| 07/31/2008 | US20080179655 Nonvolatile semiconductor memory device having multi-layered oxide/(oxy) nitride film as inter-electrode insulating film and manufacturing method thereof |
| 07/31/2008 | US20080179653 Semiconductor device and a method of manufacturing the same |
| 07/31/2008 | US20080179650 Semiconductor device, fabrication method of semiconductor device, and semiconductor memory device |
| 07/31/2008 | US20080179649 Mounting structures for integrated circuit modules |
| 07/31/2008 | US20080179638 Gap fill for underlapped dual stress liners |
| 07/31/2008 | US20080179637 Transistors having implanted channels and implanted P-type regions beneath the source region and methods of fabricating the same |
| 07/31/2008 | US20080179636 N-fets with tensilely strained semiconductor channels, and method for fabricating same using buried pseudomorphic layers |
| 07/31/2008 | US20080179635 Fin interconnects for multigate fet circuit blocks |
| 07/31/2008 | US20080179632 Selective links in silicon hetero-junction bipolar transistors using carbon doping and method of forming same |
| 07/31/2008 | US20080179631 III-Nitride power semiconductor device |
| 07/31/2008 | US20080179630 Diode assembly |
| 07/31/2008 | US20080179629 Semiconductor device |
| 07/31/2008 | US20080179628 Transistor with embedded silicon/germanium material on a strained semiconductor on insulator substrate |
| 07/31/2008 | US20080179626 Mos transistor and manufacturing methods thereof |
| 07/31/2008 | US20080179624 Semiconductor ESD device and method of making same |
| 07/31/2008 | US20080179623 Semiconductor light emitting element |
| 07/31/2008 | US20080179600 Thin film transistor, method of producing the same, and display device using the thin film transistor |
| 07/31/2008 | US20080179598 Display device and manufacturing method of the same |
| 07/31/2008 | US20080179597 Display device |
| 07/31/2008 | US20080179596 Thin film transistor, organic light emitting device including thin film transistor, and manufacturing method thereof |
| 07/31/2008 | US20080179594 Flexible display device and fabricating method thereof |
| 07/31/2008 | US20080179593 Thin film transistor array panel and method of manufacturing the same |
| 07/31/2008 | US20080179591 Phase Change Memory Cell Design with Adjusted Seam Location |
| 07/31/2008 | US20080179589 Systems, devices and methods involving superlattice infrared detector structures |
| 07/31/2008 | US20080179588 Semiconductor device including a metal-to-semiconductor superlattice interface layer and related methods |
| 07/31/2008 | US20080179586 Primary nanowire of a first conductivity type; a secondary nanowire of a second conductivity type extending outwardly from the primary nanowire; a doped region of the second conductivity type extending from the secondary nanowire into a portion of the primary nanowire |
| 07/31/2008 | DE19809564B4 Siliziumkarbid-Halbleiterbauelement Silicon carbide semiconductor device |
| 07/31/2008 | DE112006001969T5 Leistungs-Halbleiter-Bauteil vom Grabentyp mit geteilter Gate-Elektrode Power semiconductor component from the grave type with split gate electrode |
| 07/31/2008 | DE102007049769A1 Feldeffekttransistor mit gekröpftem Mehrfach-Gate-Aufbau Field effect transistor having cranked multiple-gate structure |
| 07/31/2008 | DE102007040587A1 Halbleitervorrichtung und Herstellungsverfahren derselben A semiconductor device and manufacturing method thereof |
| 07/31/2008 | DE102007004323A1 Component arrangement, has MOS transistor e.g. MOSFET, with field electrode that is arranged adjacent to drift zone, and charging circuit exhibiting rectifier unit that is switched between gate electrode of transistor and field electrode |
| 07/31/2008 | DE102007004320A1 Semiconductor component i.e. metal oxide semiconductor transistor, has dielectric layer arranged between drift zone and drift control zone, where drift zone includes varying doping and/or varying material composition based on dielectric |
| 07/31/2008 | DE102007003541A1 Elektronisches Bauteil Electronic component |
| 07/31/2008 | DE102007002744A1 Semiconductor component i.e. power semiconductor element e.g. FET, has semiconductor body made of semiconductor material, and layer made of another material, which includes high conductivity than former material, provided in body |
| 07/31/2008 | DE102004021240B4 Verfahren zur Herstellung einer Halbleiter-Schaltungsanordnung in BiCMOS-Technologie A method for fabricating a semiconductor circuit arrangement in BiCMOS technology |
| 07/31/2008 | DE10196678B4 Herstellungsverfahren für einen Dünnfilmstrukturkörper Manufacturing method of a thin-film structure body |
| 07/31/2008 | DE10150432B4 Arraysubstrat für eine Flüssigkristallanzeige und Verfahren zu dessen Herstellung Array substrate for a liquid crystal display and method for its production |
| 07/31/2008 | DE10103337B4 Leistungs-Halbleiterelement mit Diodeneinrichtungen zur Temperaturerfassung und zum Absorbieren von statischer Elektrizität sowie Leistungs-Halbleitervorrichtung mit einem derartigen Leistungs-Halbleiterelement Power semiconductor element with diode means for temperature detection and for absorbing static electricity, or the power semiconductor device with such a power semiconductor element |
| 07/30/2008 | EP1950808A2 Examination apparatus for biological sample and chemical sample |
| 07/30/2008 | EP1950177A1 Semiconductor thin film, method for producing same, and thin film transistor |
| 07/30/2008 | EP1949456A2 Integrated circuit using complementary junction field effect transistor and mos transistor in silicon and silicon alloys |
| 07/30/2008 | EP1949455A1 Photoelectric conversion device |
| 07/30/2008 | EP1949447A2 Low threshold voltage semiconductor device with dual threshold voltage control means |
| 07/30/2008 | EP1949446A2 Transistor device |
| 07/30/2008 | EP1949445A2 SECOND SCHOTTKY CONTACT METAL LAYER TO IMPROVE GaN SCHOTTKY DIODE PERFORMANCE |
| 07/30/2008 | EP1949442A1 Fabrication of transistors |
| 07/30/2008 | EP1949435A1 Structure and method to increase strain enhancement with spacerless fet and dual liner process |
| 07/30/2008 | EP1949425A2 Radiation hardened isolation structures and fabrication methods |
| 07/30/2008 | EP1949421A2 Method for making a semiconductor device including band-engineered superlattice using intermediate annealing |
| 07/30/2008 | EP1949417A2 Method of fabricating an exposed die package |
| 07/30/2008 | EP1949276A2 Semiconductor device and method for providing a reduced surface area electrode |
| 07/30/2008 | EP1425756A4 Non-volatile semiconductor memory and method of operating the same |
| 07/30/2008 | EP1342266B1 Method for producing high-speed vertical npn bipolar transistors and complementary mos transistors on a chip |
| 07/30/2008 | EP1285465B1 Bipolar transistor |
| 07/30/2008 | EP1042808B1 Reduced capacitance transistor with electro-static discharge protection structure and method for forming the same |
| 07/30/2008 | CN101233618A Semiconductor device and method of manufacturing the same |
| 07/30/2008 | CN101233617A Solderable top metal for SiC device |
| 07/30/2008 | CN101233616A Semiconductor element and electric device |