| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/07/2008 | US20080185643 Semiconductor device having trench edge termination structure |
| 08/07/2008 | US20080185642 Trench MOSFET with deposited oxide |
| 08/07/2008 | US20080185641 Recessed transistor and method of manufacturing the same |
| 08/07/2008 | US20080185640 Semiconductor device |
| 08/07/2008 | US20080185639 Semiconductor device and method of manufacturing the same |
| 08/07/2008 | US20080185638 Semiconductor device and method of fabricating the same |
| 08/07/2008 | US20080185637 Insulated gate field effect transistor and a method of manufacturing the same |
| 08/07/2008 | US20080185636 Semiconductor structure including doped silicon carbon liner layer and method for fabrication thereof |
| 08/07/2008 | US20080185634 Structures for and method of silicide formation on memory array and peripheral logic devices |
| 08/07/2008 | US20080185633 Charge trap memory device with blocking insulating layer having higher-dielectric constant and larger energy band-gap and method of manufacturing the same |
| 08/07/2008 | US20080185632 Method for improving erase saturation in non-volatile memory devices and devices obtained thereof |
| 08/07/2008 | US20080185631 Dielectric layer for semiconductor device and method of manufacturing the same |
| 08/07/2008 | US20080185630 Stacked gate nonvolatile semiconductor memory and method for manufacturing the same |
| 08/07/2008 | US20080185629 Semiconductor device having variable operating information |
| 08/07/2008 | US20080185628 Semiconductor device and method of manufacturing the same |
| 08/07/2008 | US20080185627 RFID tag having non-volatile memory device having floating-gate fets with different source-gate and drain-gate border lengths |
| 08/07/2008 | US20080185626 Trench capacitor and method for fabricating the same |
| 08/07/2008 | US20080185625 Source/Drain to Gate Capacitive Switches and Wide Tuning Range Varactors |
| 08/07/2008 | US20080185624 Storage capacitors for semiconductor devices |
| 08/07/2008 | US20080185617 Strained MOS device and methods for forming the same |
| 08/07/2008 | US20080185616 Semiconductor device-based sensors and methods associated with the same |
| 08/07/2008 | US20080185615 Method and Apparatus for Double-Sided Biasing of Nonvolatile Memory |
| 08/07/2008 | US20080185613 III-Nitride semiconductor device |
| 08/07/2008 | US20080185611 Preparation method of a coating of gallium nitride |
| 08/07/2008 | US20080185594 Method for manufacturing electronic devices integrated in a semiconductor substrate and corresponding devices |
| 08/07/2008 | US20080185593 Power field effect transistor and manufacturing method thereof |
| 08/07/2008 | US20080185592 Semiconductor substrate with multiple crystallographic orientations |
| 08/07/2008 | US20080185591 Structure and method for thin film device |
| 08/07/2008 | US20080185590 Thin Film Transistor Array Panel and Method for Manufacturing the Same |
| 08/07/2008 | US20080185589 Display substrate having the same and method of manufacturing the display substrate |
| 08/07/2008 | US20080185588 Display substrate, display device and method of manufacturing the same |
| 08/07/2008 | US20080185587 Display panel and method of manufacture |
| 08/07/2008 | US20080185580 EPITAXIAL GROWTH OF ZnO WITH CONTROLLED ATMOSPHERE |
| 08/07/2008 | US20080185579 Buried circumferential electrode microcavity plasma device arrays, electrical interconnects, and formation method |
| 08/07/2008 | US20080185576 Error corrected quantum computer |
| 08/07/2008 | DE102008006524A1 Finnenverbindung für Multi-Gate-Feldeffekt-Transistoren Finn connection for multi-gate field-effect transistors |
| 08/07/2008 | DE102008000141A1 Rauscharmer Transistor und Verfahren zur Herstellung desselben Low-noise transistor and method of manufacturing the same |
| 08/07/2008 | DE102007053104A1 Metal-insulator-semiconductor semiconductor device, has gate insulator formed on upper half of trench, where lower half of trench is filled with dielectric fluid having high dielectric constant |
| 08/07/2008 | DE102007045285A1 Semiconductor device e.g. diode, has anode electrode formed on surface of semiconductor body, where semiconductor body has protrusion that is formed at front end such that protrusion projects from inclined surface |
| 08/07/2008 | DE102007030804A1 Halbleitervorrichtung Semiconductor device |
| 08/07/2008 | DE102007004824A1 Verbesserte Verspannungsübertragung in einem Zwischenschichtdielektrikum durch Verwendung einer zusätzlichen Verspannungsschicht über einer Schicht mit dualer Verspannung in einem Halbleiterbauelement Improved stress transmission in an interlayer by using an additional strain layer over a layer dual strain in a semiconductor device |
| 08/07/2008 | DE102007004331A1 Component for use in semiconductor body, has dielectric layer, which is arranged in semiconductor body and extends in semiconductor body in certain direction |
| 08/07/2008 | DE102007004091A1 Power semiconductor e.g. metal oxide semiconductor transistor, component arrangement, has capacitive memory arrangement attached to drift control zone, and charging circuit connected between component zone and capacitive memory arrangement |
| 08/07/2008 | DE102007004090A1 Semiconductor device, has drift zone and drift control zone, which is arranged adjacent to drift zone and which is dielectrically isolated by dielectric layer, opposite to drift zone |
| 08/07/2008 | DE102007003812A1 Halbleiterbauelement mit Trench-Gate und Verfahren zur Herstellung A semiconductor device having trench gate and processes for preparing |
| 08/07/2008 | DE102004009083B4 MOS-Leistungstransistoranordnung und Verfahren zu deren Herstellung MOS power transistor structure and process for their preparation |
| 08/06/2008 | EP1953827A2 High voltage transistor and method of manufacturing the same |
| 08/06/2008 | EP1953826A1 Semiconductor device |
| 08/06/2008 | EP1953810A2 Transistor, fabricating method thereof and flat panel display |
| 08/06/2008 | EP1953499A2 Sensor for detecting acceleration and angular velocity |
| 08/06/2008 | EP1952454A2 Laterally grown nanotubes and method of formation |
| 08/06/2008 | EP1952445A1 Varactor element and low distortion varactor circuit arrangement |
| 08/06/2008 | EP1952444A1 Metal-base nanowire transistor |
| 08/06/2008 | EP1952443A2 Electronic device contact structures |
| 08/06/2008 | EP1952429A1 Dielectric media including surface-treated metal oxide particles |
| 08/06/2008 | EP1661163A4 Method for fabricating a nitrided silicon-oxide gate dielectric |
| 08/06/2008 | EP1620891B1 Method of forming multi-height finfets |
| 08/06/2008 | EP0931379B1 Triple well charge pump |
| 08/06/2008 | CN201097401Y Low capacitance over-voltage protection part |
| 08/06/2008 | CN101238585A Ldmos晶体管 Ldmos transistor |
| 08/06/2008 | CN101238561A Field effect transistor |
| 08/06/2008 | CN101238560A Field effect transistor |
| 08/06/2008 | CN101238558A Method of fabricating a bipolar transistor |
| 08/06/2008 | CN101238550A Method for forming w-based film, method for forming gate electrode, and method for manufacturing semiconductor device |
| 08/06/2008 | CN101236995A PIN diode and method for making PIN diode and forming semiconductor fin structure |
| 08/06/2008 | CN101236994A Charge trap memory device with blocking insulating layer and method of manufacturing the same |
| 08/06/2008 | CN101236993A Thin film transistor, method of producing the same, and display device using the thin film transistor |
| 08/06/2008 | CN101236992A Thin film transistor and method of manufacturing the same |
| 08/06/2008 | CN101236991A Semiconductor device and manufacturing method thereof |
| 08/06/2008 | CN101236990A Semiconductor structure and its making method |
| 08/06/2008 | CN101236989A Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET |
| 08/06/2008 | CN101236988A Semiconductor device and method for fabricating the same |
| 08/06/2008 | CN101236987A Semiconductor device |
| 08/06/2008 | CN101236986A High voltage transistors and its production method |
| 08/06/2008 | CN101236969A Static RAM component |
| 08/06/2008 | CN101236929A Storage unit cascading structure memory and its making method |
| 08/06/2008 | CN101236900A Method for production of thin-film semiconductor device |
| 08/06/2008 | CN101236787A Method for reading a memory array |
| 08/06/2008 | CN101236782A Operation method for multi-level memory unit and integrated circuit for information storage |
| 08/06/2008 | CN101236343A Liquid crystal display device, pixel structure and driving method thereof |
| 08/06/2008 | CN101236341A Electro-optical device substrate, electro-optical device and electronic apparatus |
| 08/06/2008 | CN100409458C Schottky diode |
| 08/06/2008 | CN100409457C Thin film transistor and active matrix flat panel display using the same |
| 08/06/2008 | CN100409456C Integrated field effect transistor and schottky device |
| 08/06/2008 | CN100409455C Field effect transistor, associated use, and associated production method |
| 08/06/2008 | CN100409454C Silicon-based one-electron transistor with quantum limit by oxygen injection and its manufacture method |
| 08/06/2008 | CN100409453C Field-effect transistor with high-sensitivity gate |
| 08/06/2008 | CN100409452C Power semiconductor device and method for forming the same |
| 08/06/2008 | CN100409451C Bipolar transistor and semiconductor device applying same |
| 08/06/2008 | CN100409450C Nanowire and electronic device |
| 08/06/2008 | CN100409449C Polysilicon-insulating layer-polysilicon capacitance, high-capacitant polysilicon device and its production |
| 08/06/2008 | CN100409441C 显示装置 The display device |
| 08/06/2008 | CN100409438C Protection circuit, semiconductor component, integrate circuit and memory component |
| 08/06/2008 | CN100409435C Electric circuit elements, electric circuit assembly, electric circuit built-in modules and manufacture thereof |
| 08/06/2008 | CN100409431C Semiconductor device and method for manufacturing the same |
| 08/06/2008 | CN100409417C Film transistor and its manufacturing method |
| 08/06/2008 | CN100409410C Method for producing a spacer structure |
| 08/06/2008 | CN100409409C Semiconductor device and manufacturing method thereof |
| 08/06/2008 | CN100409404C Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus |
| 08/06/2008 | CN100409401C Stripping method and method for producing semiconductor device |